JP2005268259A - Multilayer wiring board - Google Patents

Multilayer wiring board Download PDF

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JP2005268259A
JP2005268259A JP2004074083A JP2004074083A JP2005268259A JP 2005268259 A JP2005268259 A JP 2005268259A JP 2004074083 A JP2004074083 A JP 2004074083A JP 2004074083 A JP2004074083 A JP 2004074083A JP 2005268259 A JP2005268259 A JP 2005268259A
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insulating layer
wiring conductor
layer
wiring board
conductor
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Tadashi Miyawaki
匡史 宮脇
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To prevent exfoliation caused by a difference between linear expansion coefficients of a wiring conductor and an insulating layer and raise the flatness of the surface of a multilayer wiring board, in the mutilayer wiring board obtained by laminating an insulating layer comprising organic resin and a wiring conductor into a multilayer. <P>SOLUTION: The multilayer wiring board is obtained by laminating the insulating layer 2 comprising resin and the wiring conductor 3 in plural layers. The wiring conductor 3 is partly embedded in the insulating layer 2 at an external peripheral part of the insulating layer 2 as viewed in a plan vision. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は多層配線基板に関し、より詳細には半導体集積回路素子を収容するための半導体素子収納用パッケージ等の電子部品収納用パッケージや、半導体集積回路等の電気的な検査をするためのプローブカード等に使用される多層配線基板に関するものである。   The present invention relates to a multilayer wiring board, and more specifically, a package for storing an electronic component such as a package for housing a semiconductor element for housing a semiconductor integrated circuit element, or a probe card for performing an electrical inspection of a semiconductor integrated circuit or the like. The present invention relates to a multilayer wiring board used for, for example.

近年、半導体集積回路は半導体素子の高集積化および処理信号数の増加によって、半導体基板上に形成される端子数が増加するとともに端子の狭ピッチ化が進んでいる。これにより、半導体集積回路素子を収容する半導体素子収納用パッケージの接続端子や、半導体集積回路の電気的な検査を行なうプローブカードのプローブも狭ピッチ化が要求されている。   2. Description of the Related Art In recent years, in semiconductor integrated circuits, the number of terminals formed on a semiconductor substrate has increased and the pitch of terminals has been reduced due to higher integration of semiconductor elements and an increase in the number of processing signals. As a result, the pitch of the connection terminals of the package for housing the semiconductor element that houses the semiconductor integrated circuit element and the probe of the probe card that performs electrical inspection of the semiconductor integrated circuit is also required.

この狭ピッチ化の要求に対して、半導体素子収納用パッケージにおいては半導体素子の実装形態がワイヤボンディング接続からフリップチップ接続へ、またプローブカードは、カンチレバー方式のものからニードル状のプローブを細密に格子状に配置したものへと移り変わってきている。   In response to this demand for narrow pitches, in the package for housing semiconductor devices, the mounting form of the semiconductor devices is changed from wire bonding connection to flip chip connection, and the probe card is a cantilever type, and needle-like probes are finely latticed. It has changed to something arranged in a shape.

また、それら半導体素子収納用パッケージやプローブカードに使われる多層配線基板の構成は、ガラス繊維から成る基材に有機樹脂を含浸硬化させた絶縁層に銅箔をパターン加工した配線導体層を形成して成るプリント配線板から、配線導体層の狭ピッチ化に優れるとともに、配線導体層を細密な格子状に配置することが可能な、基板の上面に薄膜の絶縁層と配線導体層とから成る多層配線部を形成したビルドアップ方式の多層配線基板へと移り変わってきている。   In addition, the structure of the multilayer wiring board used in the semiconductor element storage package and the probe card is formed by forming a wiring conductor layer obtained by patterning a copper foil on an insulating layer obtained by impregnating and curing an organic resin on a substrate made of glass fiber. Multi-layer consisting of a thin insulating layer and a wiring conductor layer on the top surface of the substrate, which is excellent in narrowing the pitch of the wiring conductor layer and can be arranged in a fine lattice pattern. It is changing to a build-up type multilayer wiring board in which a wiring part is formed.

かかるビルドアップ方式の多層配線基板は、基板の上面に、エポキシ樹脂やポリイミド樹脂等から成り、カーテンコート法やスピンコート法等によって樹脂の前駆体を塗布し加熱硬化させることによって形成される絶縁層と、銅やアルミニウム等の金属から成り、めっき法や気相成膜法等の薄膜形成技術およびフォトリソグラフィ技術を採用することによって形成される配線導体層とを交互に多層に積層させた構造となっている。
特開平11−163520号公報 特開平11−38044号公報
Such a build-up type multilayer wiring board is made of an epoxy resin, a polyimide resin, or the like on the upper surface of the substrate, and is formed by applying a resin precursor by a curtain coating method, a spin coating method, or the like and then heat-curing the insulating layer. And a structure in which a wiring conductor layer made of a metal such as copper or aluminum is alternately laminated in multiple layers by adopting a thin film formation technique such as a plating method or a vapor deposition method and a photolithography technique. It has become.
JP-A-11-163520 Japanese Unexamined Patent Publication No. 11-38044

しかしながら、上記のような絶縁層と配線導体層とから成る多層配線部を有する多層配線基板においては、絶縁層と配線導体層との線膨張係数差による応力が生じやすく、特に多層配線基板の外周部ではその応力が大きく、配線導体層が絶縁層から剥離しやすいという問題点があった。   However, in a multilayer wiring board having a multilayer wiring portion composed of an insulating layer and a wiring conductor layer as described above, stress due to a difference in linear expansion coefficient between the insulating layer and the wiring conductor layer is likely to occur. There is a problem that the stress is large at the portion, and the wiring conductor layer is easily peeled off from the insulating layer.

また、有機樹脂から成る絶縁層の厚みがその有機樹脂の前駆体を塗布する面の凹凸にほぼ均一に追従するため、絶縁層上に形成した配線導体層の凸部によって、その上に形成される絶縁層の表面には段差が発生しやすい。また、絶縁層を多層化していくと、各層での凹凸を反映して、多層配線基板の最上面に形成された絶縁層の表面では複雑な凹凸形状になることもある。さらに、導体抵抗値を低減させるために導体層厚みを厚くする傾向にあり、多層配線基板の上面は、より複雑な凹凸形状になることもある。   In addition, since the thickness of the insulating layer made of organic resin follows the unevenness of the surface on which the precursor of the organic resin is applied almost uniformly, the wiring conductor layer formed on the insulating layer is formed on the insulating layer. A step is likely to occur on the surface of the insulating layer. Further, when the insulating layer is multilayered, the surface of the insulating layer formed on the uppermost surface of the multilayer wiring board may have a complicated uneven shape reflecting the unevenness in each layer. Furthermore, in order to reduce the conductor resistance value, the thickness of the conductor layer tends to be increased, and the upper surface of the multilayer wiring board may have a more complicated uneven shape.

このような凹凸形状のある多層配線基板の最上面に形成された配線導体層の上面に半導体基板を実装する場合には、多層配線基板の最上面に形成された絶縁層の表面の凹凸を吸収できるように、例えば、配線導体層上に形成する半導体基板との接続用の半田の上面をすべて半導体基板の表面に対して平行な同一平面上に位置させる必要があり、工程が複雑になるとともに調整する分だけ必要以上の半田高さが必要になるため、結果として多層配線基板の最上面における配線導体層の狭ピッチ化を阻害してしまうという問題点があった。   When a semiconductor substrate is mounted on the top surface of a wiring conductor layer formed on the top surface of a multilayer wiring board having such a concavo-convex shape, the surface roughness of the insulating layer formed on the top surface of the multilayer wiring board is absorbed. For example, the upper surface of the solder for connecting to the semiconductor substrate formed on the wiring conductor layer must be located on the same plane parallel to the surface of the semiconductor substrate, which complicates the process. Since the solder height more than necessary is necessary for the adjustment, there is a problem that the narrow pitch of the wiring conductor layer on the uppermost surface of the multilayer wiring board is hindered as a result.

また、プローブカードのようにプローブを接触させたり接続したりする場合には、配線導体層の上面の高さばらつきによってプローブ先端の高さばらつきが大きくなり、半導体基板の端子に対するプローブの接触圧力にばらつきが生じ、接続抵抗が変動しやすいという問題点があった。   Also, when the probe is brought into contact or connected like a probe card, the height variation of the probe tip increases due to the height variation of the upper surface of the wiring conductor layer, and the contact pressure of the probe with respect to the terminal of the semiconductor substrate is increased. There was a problem that variations occurred and the connection resistance was likely to fluctuate.

さらに、配線導体層の上面の高さばらつきがあると、そのために生じるプローブの接触圧力のばらつきにより特定のプローブに圧力が集中し、プローブの寿命が短くなりやすいという問題点があった。   Further, if there is a variation in the height of the upper surface of the wiring conductor layer, there is a problem that the pressure is concentrated on a specific probe due to the variation in the contact pressure of the probe, which tends to shorten the life of the probe.

本発明は上記のような従来の技術における問題点に鑑みてなされたものであり、その目的は、多層配線基板の最上面に形成された絶縁層の平坦度が高い、配線導体層の狭ピッチ化に対応することができる多層配線基板を提供することにある。   The present invention has been made in view of the above-described problems in the prior art, and the object thereof is to provide a narrow pitch of the wiring conductor layer in which the insulating layer formed on the uppermost surface of the multilayer wiring board has a high flatness. An object of the present invention is to provide a multilayer wiring board that can cope with the manufacturing process.

本発明の多層配線基板は、樹脂から成る絶縁層と配線導体とが交互に複数積層されて成る多層配線基板であって、前記配線導体は、平面視で前記絶縁層の外周部において前記絶縁層に一部が埋め込まれていることを特徴とするものである。   The multilayer wiring board of the present invention is a multilayer wiring board in which a plurality of insulating layers made of resin and wiring conductors are alternately stacked, and the wiring conductor is formed on the insulating layer at an outer peripheral portion of the insulating layer in a plan view. It is characterized in that a part is embedded in.

また、本発明の多層配線基板において、好ましくは、前記配線導体は、前記絶縁層の層間に形成されるとともに前記配線導体の上側および下側の両方の前記絶縁層に埋め込まれていることを特徴とするものである。   In the multilayer wiring board of the present invention, preferably, the wiring conductor is formed between the insulating layers and embedded in the insulating layers on both the upper side and the lower side of the wiring conductor. It is what.

本発明の多層配線基板によれば、配線導体は、平面視で絶縁層の外周部において絶縁層に一部が埋め込まれていることから、配線導体を絶縁層に強固に固定することができるようになり、特に絶縁層と配線導体との線膨張係数差による応力が加わりやすい外周部において配線導体が絶縁層から剥離するのを有効に防止することができる。   According to the multilayer wiring board of the present invention, since the wiring conductor is partially embedded in the insulating layer at the outer peripheral portion of the insulating layer in plan view, the wiring conductor can be firmly fixed to the insulating layer. In particular, it is possible to effectively prevent the wiring conductor from being separated from the insulating layer at the outer peripheral portion where stress due to the difference in linear expansion coefficient between the insulating layer and the wiring conductor is easily applied.

また、従来のように配線導体を絶縁層の上面に配設した場合に比べて絶縁層から突出する配線導体の突出量を小さくすることができ、多層配線基板の表面の平坦度を高めることができる。さらに、配線導体の厚みを従来よりも厚くしても多層配線基板の最上面に形成された絶縁層の平坦度に対する配線導体の突出による影響を小さく抑えることができ、電気特性を向上させることができる。   In addition, the amount of protrusion of the wiring conductor protruding from the insulating layer can be reduced as compared with the conventional case where the wiring conductor is disposed on the upper surface of the insulating layer, and the flatness of the surface of the multilayer wiring board can be increased. it can. Furthermore, even if the thickness of the wiring conductor is made thicker than before, the influence of the protrusion of the wiring conductor on the flatness of the insulating layer formed on the uppermost surface of the multilayer wiring board can be suppressed, and the electrical characteristics can be improved. it can.

本発明の多層配線基板は、好ましくは、配線導体が絶縁層の層間に形成されるとともに配線導体の上側および下側の両方の絶縁層に埋め込まれていることにより、配線導体の突出量をさらに低減することができ、多層配線基板の表面の平坦度をより高めることができるとともに、配線導体を絶縁層にさらに強固に固定することができる。   In the multilayer wiring board of the present invention, preferably, the wiring conductor is formed between the insulating layers and embedded in both the upper and lower insulating layers of the wiring conductor, thereby further increasing the amount of protrusion of the wiring conductor. It is possible to reduce the level, and the flatness of the surface of the multilayer wiring board can be further increased, and the wiring conductor can be more firmly fixed to the insulating layer.

また、絶縁層に埋め込むことで多層配線基板の平坦度を維持しながら配線導体の厚みを厚くすることができるが、上側または下側の絶縁層のみに埋め込む場合は、配線導体の厚みが厚くなるに連れて、絶縁性を確保するために、その分絶縁層の厚みを厚くする必要があるのに対し、配線導体を上側および下側の両方に埋め込むことにより各絶縁層の厚みを薄くしても絶縁性を維持することができるので、多層配線基板厚みを厚くすること無く配線導体の厚みを厚くすることができる。   In addition, by embedding in the insulating layer, the thickness of the wiring conductor can be increased while maintaining the flatness of the multilayer wiring board. However, when embedded only in the upper or lower insulating layer, the thickness of the wiring conductor is increased. Therefore, in order to ensure insulation, it is necessary to increase the thickness of the insulating layer accordingly, whereas the thickness of each insulating layer is reduced by embedding the wiring conductor in both the upper and lower sides. Since the insulation can be maintained, the thickness of the wiring conductor can be increased without increasing the thickness of the multilayer wiring board.

これらのことにより、複数の絶縁層と配線導体とを多層に積層して成る多層配線基板の平坦な最上面に形成された配線導体と半導体基板の接続部位とを平行に配置することが容易になるため、半導体基板の接続用の半田の高さを調節する必要がなくなる。これにより、多層配線基板の最上面に形成された絶縁層の平坦度が高い、配線導体の狭ピッチ化に対応することができる多層配線基板となる。   As a result, the wiring conductor formed on the flat top surface of the multilayer wiring board formed by laminating a plurality of insulating layers and wiring conductors in multiple layers can be easily arranged in parallel with the connection portion of the semiconductor substrate. Therefore, it is not necessary to adjust the height of the solder for connecting the semiconductor substrate. As a result, the multilayer wiring board can cope with the narrowing of the pitch of the wiring conductor in which the flatness of the insulating layer formed on the uppermost surface of the multilayer wiring board is high.

また、本発明の多層配線基板をプローブカードとして使用する場合には、複数の絶縁層と配線導体とを多層に積層して成る多層配線基板の最上面に形成された配線導体とプローブとの高さばらつきがなくなり、半導体集積回路の検査の際にプローブにかかる荷重が配線導体の上面の一部に集中することがなくなるものとすることができ、配線導体の磨耗による多層配線基板の寿命が短くなるという問題もなくすことができる。これにより、プローブとの接触抵抗を長期にわたり安定なものとすることができる、電気的な接続性に優れた多層配線基板となる。   When the multilayer wiring board of the present invention is used as a probe card, the wiring conductor and the probe formed on the uppermost surface of the multilayer wiring board formed by laminating a plurality of insulating layers and wiring conductors in multiple layers. As a result, the load applied to the probe during the inspection of the semiconductor integrated circuit is not concentrated on a part of the upper surface of the wiring conductor, and the life of the multilayer wiring board due to the wear of the wiring conductor is shortened. Can be eliminated. Thereby, it becomes a multilayer wiring board excellent in electrical connectivity which can make contact resistance with a probe stable for a long time.

また、多層配線基板の配線導体の狭ピッチ化によって配線導体が微細化された場合においても、多層配線基板の配線導体と半導体基板のバンプとの接続強度を強固にすることができる。これによって多層配線基板の配線導体の狭ピッチ化に対応することができるとともに半導体基板との接続信頼性の高い多層配線基板となる。   Further, even when the wiring conductor is miniaturized by narrowing the pitch of the wiring conductor of the multilayer wiring board, the connection strength between the wiring conductor of the multilayer wiring board and the bump of the semiconductor substrate can be strengthened. As a result, the pitch of the wiring conductors of the multilayer wiring board can be reduced, and the multilayer wiring board with high connection reliability with the semiconductor substrate can be obtained.

以下、図面に基づいて本発明の多層配線基板を詳細に説明する。   Hereinafter, a multilayer wiring board of the present invention will be described in detail with reference to the drawings.

図1は本発明の多層配線基板の実施の形態の一例を示す断面図であり、図2は図1に示す多層配線基板における配線導体の周辺の状態を示す要部拡大断面図である。これらの図において、1は基板、2は絶縁層、3は配線導体、4は絶縁層2の一部としての絶縁フィルム層、5は絶縁層2の一部としての絶縁性接着剤層、6は貫通導体、7は貫通孔である。   FIG. 1 is a cross-sectional view showing an example of an embodiment of a multilayer wiring board according to the present invention, and FIG. 2 is an enlarged cross-sectional view of a main part showing a state around a wiring conductor in the multilayer wiring board shown in FIG. In these drawings, 1 is a substrate, 2 is an insulating layer, 3 is a wiring conductor, 4 is an insulating film layer as a part of the insulating layer 2, 5 is an insulating adhesive layer as a part of the insulating layer 2, 6 Is a through conductor, and 7 is a through hole.

基板1は、その上面に複数の絶縁フィルム層4を間に絶縁性接着剤層5を介して積層した絶縁層2と配線導体3とを多層に積層した多層配線部が配設されており、この多層配線部を支持する支持部材として機能する。   The substrate 1 is provided with a multilayer wiring portion in which a plurality of insulating film layers 4 are laminated with an insulating adhesive layer 5 therebetween and an insulating layer 2 and a wiring conductor 3 are laminated in multiple layers on the upper surface. It functions as a support member that supports the multilayer wiring portion.

基板1は、酸化アルミニウム質焼結体,ムライト質焼結体等の酸化物系セラミックス、あるいは表面に酸化物膜を有する窒化アルミニウム質焼結体,炭化珪素質焼結体等の非酸化物系セラミックス、さらにはガラス繊維から成る基材にエポキシ樹脂を含浸させたガラスエポキシ樹脂やガラス繊維から成る基材にビスマレイミドトリアジン樹脂を含浸させたもの等の電気絶縁材料で形成されている。   The substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or a non-oxide type such as an aluminum nitride sintered body or silicon carbide sintered body having an oxide film on the surface. It is formed of an electrically insulating material such as ceramics, a glass epoxy resin obtained by impregnating a glass fiber base material with an epoxy resin, or a glass fiber base material impregnated with a bismaleimide triazine resin.

基体1が、例えば、酸化アルミニウム質焼結体で形成されている場合には、アルミナ,シリカ,カルシア,マグネシア等の原料粉末に適当な有機溶剤,溶媒を添加混合して泥漿状となすとともにこれをドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、しかる後、このセラミックグリーンシートに適当な打ち抜き加工を施し、所定形状となすとともに高温(約1600℃)で焼成することによって製作される。あるいは、アルミナ等の原料粉末に適当な有機溶剤,溶媒を添加混合して原料粉末を調製するとともにこの原料粉末をプレス成形機によって所定形状に成形し、最後にこの成形体を高温(約1600℃)で焼成することによって製作される。また、ガラスエポキシ樹脂から成る場合は、例えばガラス繊維から成る基材にエポキシ樹脂の前駆体を含浸させ、このエポキシ樹脂前駆体を所定の温度で熱硬化させることによって製作される。   When the substrate 1 is formed of, for example, an aluminum oxide sintered body, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as alumina, silica, calcia, and magnesia to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by adopting the doctor blade method and the calender roll method. After that, the ceramic green sheet is appropriately punched into a predetermined shape and at a high temperature (about 1600 ° C). ). Alternatively, a raw material powder is prepared by adding an appropriate organic solvent and solvent to a raw material powder such as alumina, and the raw material powder is formed into a predetermined shape by a press molding machine. Finally, the compact is heated to a high temperature (about 1600 ° C). ). Moreover, when it consists of glass epoxy resins, it manufactures, for example by impregnating the base material which consists of glass fiber with the precursor of an epoxy resin, and thermosetting this epoxy resin precursor at predetermined temperature.

また、基板1には、その上面に複数の絶縁層2と配線導体3とを多層に積層した多層配線部が配設されている。絶縁層2は上下に位置する配線導体3を電気的に絶縁し、配線導体3は電気信号を伝達するための伝達路として機能する。   In addition, the substrate 1 is provided with a multilayer wiring portion in which a plurality of insulating layers 2 and wiring conductors 3 are laminated in a multilayer manner on the upper surface thereof. The insulating layer 2 electrically insulates the wiring conductors 3 positioned above and below, and the wiring conductor 3 functions as a transmission path for transmitting electrical signals.

多層配線部の絶縁層2は、例えば、絶縁フィルム層4と絶縁性接着剤層5とから構成されており、絶縁フィルム層4はポリイミド樹脂,ポリフェニレンサルファイド樹脂,全芳香族ポリエステル樹脂,フッ素樹脂等から成る。また、絶縁性接着剤層5はシロキサン変性ポリアミドイミド樹脂,シロキサン変性ポリイミド樹脂,ポリイミド樹脂,ビスマレイミドトリアジン樹脂等から成る。   The insulating layer 2 of the multilayer wiring portion is composed of, for example, an insulating film layer 4 and an insulating adhesive layer 5, and the insulating film layer 4 is made of polyimide resin, polyphenylene sulfide resin, wholly aromatic polyester resin, fluororesin, or the like. Consists of. The insulating adhesive layer 5 is made of siloxane-modified polyamideimide resin, siloxane-modified polyimide resin, polyimide resin, bismaleimide triazine resin, or the like.

絶縁層2は、例えば、まず12.5〜50μm程度の絶縁フィルムに絶縁性接着剤をドクターブレード法等を用いて乾燥厚みで5〜20μm程度に塗布し乾燥させたものを準備し、この絶縁フィルム層4を基板1や下層の絶縁層2の上面に間に絶縁性接着剤層5が配されるように積み重ね、これを加熱プレス装置を用いて加熱加圧し接着することによって形成される。   The insulating layer 2 is prepared, for example, by first applying an insulating adhesive to an insulating film of about 12.5 to 50 μm to a dry thickness of about 5 to 20 μm using a doctor blade method or the like, and then drying the insulating film layer. 4 are stacked such that the insulating adhesive layer 5 is disposed between the upper surfaces of the substrate 1 and the lower insulating layer 2, and this is heated and pressed using a hot press device to be bonded.

これらに使われる絶縁フィルム層4と絶縁性接着剤層5との組み合わせとしては、例えば、絶縁フィルム層4をポリイミド樹脂とし、絶縁性接着剤層5をシロキサン変性ポリアミドイミド樹脂とする組み合わせがある。この組み合わせによれば、シロキサン変性ポリアミドイミド樹脂とポリイミド樹脂との接着性も良好であり、かつ耐熱性が高いものであるため、これらにより形成した多層配線基板をプリント基板等に実装する際の耐半田耐熱性等が良好なものとなる。   As a combination of the insulating film layer 4 and the insulating adhesive layer 5 used for these, for example, there is a combination in which the insulating film layer 4 is a polyimide resin and the insulating adhesive layer 5 is a siloxane-modified polyamideimide resin. According to this combination, the adhesion between the siloxane-modified polyamideimide resin and the polyimide resin is good and the heat resistance is high, so that the multi-layer wiring board formed by these is resistant to being mounted on a printed board or the like. Good solder heat resistance and the like.

また、特に耐熱性が高い組み合わせとしては、絶縁フィルム層4をポリイミド樹脂とし、絶縁性接着剤層5を熱可塑性のポリイミド樹脂としておくのがよい。この組み合わせの場合には、耐熱性が高いものになるとともに、絶縁フィルム層4と絶縁性接着剤層5の線膨張係数差を小さくできるための線膨張係数の差による応力を低くすることができ、これにより、配線導体3と貫通導体6との界面における剥離を生じる応力を小さくすることができる。また、多層配線基板の全体の反りを低減することができるようになることにより、その表面に実装される半導体集積回路素子の端子の狭ピッチ化にもよりよく対応することができるような多層配線基板にすることができる。   Further, as a combination having particularly high heat resistance, it is preferable to use the insulating film layer 4 as a polyimide resin and the insulating adhesive layer 5 as a thermoplastic polyimide resin. In the case of this combination, the heat resistance is high and the stress due to the difference in linear expansion coefficient for reducing the difference in linear expansion coefficient between the insulating film layer 4 and the insulating adhesive layer 5 can be reduced. As a result, the stress that causes separation at the interface between the wiring conductor 3 and the through conductor 6 can be reduced. In addition, since it becomes possible to reduce the overall warpage of the multilayer wiring board, the multilayer wiring can better cope with the narrow pitch of the terminals of the semiconductor integrated circuit element mounted on the surface thereof. It can be a substrate.

さらに、各絶縁層2には表面に配線導体3が配設されるとともに、絶縁層2を挟んで上下に位置する配線導体3同士を電気的に接続するため、その絶縁層2に設けた貫通孔7に貫通導体6が埋設されている。これら配線導体3および貫通導体6は、銅,金,アルミニウム,ニッケル,クロム,モリブデン,チタンおよびそれらの合金等の金属材料をスパッタリング法,蒸着法,めっき法等の薄膜形成技術を採用することによって形成することができる。   Further, the wiring conductor 3 is disposed on the surface of each insulating layer 2, and the wiring conductors 3 positioned above and below the insulating layer 2 are electrically connected to each other. A through conductor 6 is embedded in the hole 7. These wiring conductors 3 and through conductors 6 are formed by adopting a thin film forming technique such as sputtering, vapor deposition or plating using a metal material such as copper, gold, aluminum, nickel, chromium, molybdenum, titanium and alloys thereof. Can be formed.

貫通導体6は配線導体3と別々に形成してもよいが、これらは同時に形成した方が、工程数を少なくできる点で好ましいものとなるとともに、両者の電気的な接続信頼性の点でも良好なものとなる。また、配線導体3と貫通導体6とを一体的に形成する場合には、それぞれを所望の厚みに調整してめっき膜で形成することができるように、主として電解めっき法を用いて形成しておくのがよい。   The through conductor 6 may be formed separately from the wiring conductor 3, but it is preferable that these are formed at the same time from the viewpoint that the number of steps can be reduced, and the electrical connection reliability between them is also good. It will be something. In addition, when the wiring conductor 3 and the through conductor 6 are integrally formed, the wiring conductor 3 and the through conductor 6 are mainly formed by using an electrolytic plating method so that each can be adjusted to a desired thickness and formed by a plating film. It is good to leave.

本発明の多層配線基板においては、配線導体3が平面視で絶縁層2の外周部において絶縁層2に一部が埋め込まれている。これにより、配線導体3を絶縁層2に強固に固定することができるようになり、特に絶縁層2と配線導体3との線膨張係数差による応力が加わりやすい外周部において配線導体3が絶縁層2から剥離するのを有効に防止することができる。   In the multilayer wiring board of the present invention, the wiring conductor 3 is partially embedded in the insulating layer 2 at the outer peripheral portion of the insulating layer 2 in plan view. As a result, the wiring conductor 3 can be firmly fixed to the insulating layer 2, and the wiring conductor 3 is formed on the insulating layer, particularly in the outer peripheral portion where the stress due to the difference in linear expansion coefficient between the insulating layer 2 and the wiring conductor 3 is easily applied. Peeling from 2 can be effectively prevented.

また、従来のように配線導体3を絶縁層2の上面に配設した場合に比べて絶縁層2から突出する配線導体3の突出量を小さくすることができ、多層配線基板の表面の平坦度を高めることができる。さらに、配線導体3の厚みを従来よりも厚くしても多層配線基板の最上面に形成された絶縁層2の平坦度に対する配線導体3の突出による影響を小さく抑えることができ、電気特性を向上させることができる。   Further, the amount of protrusion of the wiring conductor 3 protruding from the insulating layer 2 can be reduced as compared with the case where the wiring conductor 3 is disposed on the upper surface of the insulating layer 2 as in the prior art, and the flatness of the surface of the multilayer wiring board is reduced. Can be increased. Furthermore, even if the wiring conductor 3 is made thicker than before, the influence of the protrusion of the wiring conductor 3 on the flatness of the insulating layer 2 formed on the uppermost surface of the multilayer wiring board can be suppressed, and the electrical characteristics are improved. Can be made.

なお、絶縁層2が絶縁フィルム層4と絶縁性接着剤層5とから成る場合、配線導体3は、絶縁フィルム層4に埋め込まれているのがよい。これにより、絶縁性接着剤層5よりも強度の高い絶縁フィルム層4に配線導体3が強固に固定されるので、配線導体3と絶縁層2との線膨張係数差による応力で配線導体3が剥離するのをきわめて有効に防止できる。   When the insulating layer 2 is composed of the insulating film layer 4 and the insulating adhesive layer 5, the wiring conductor 3 is preferably embedded in the insulating film layer 4. Thereby, since the wiring conductor 3 is firmly fixed to the insulating film layer 4 having higher strength than the insulating adhesive layer 5, the wiring conductor 3 is caused by stress due to a difference in linear expansion coefficient between the wiring conductor 3 and the insulating layer 2. It can prevent peeling very effectively.

また、好ましくは、配線導体3が絶縁層2の層間に形成されるとともに配線導体3の上側および下側の両方の絶縁層2に埋め込まれているのがよい。これにより、配線導体3の突出量をさらに低減することができ、多層配線基板の表面の平坦度をより高めることができるとともに、配線導体3を絶縁層2にさらに強固に固定することができる。   Preferably, the wiring conductor 3 is formed between the insulating layers 2 and embedded in both the upper and lower insulating layers 2 of the wiring conductor 3. Thereby, the protrusion amount of the wiring conductor 3 can be further reduced, the flatness of the surface of the multilayer wiring board can be further increased, and the wiring conductor 3 can be more firmly fixed to the insulating layer 2.

また、絶縁層2に埋め込むことで多層配線基板の平坦度を維持しながら配線導体3の厚みを厚くすることができるが、上側または下側の絶縁層2のみに埋め込む場合は、配線導体3の厚みが厚くなるに連れて、絶縁性を確保するために、その分絶縁層2の厚みを厚くする必要があるのに対し、配線導体3を上側および下側の両方に埋め込むことにより各絶縁層2の厚みを薄くしても絶縁性を維持することができるので、多層配線基板厚みを厚くすること無く配線導体3の厚みを厚くすることができる。   Further, by embedding in the insulating layer 2, the thickness of the wiring conductor 3 can be increased while maintaining the flatness of the multilayer wiring board. However, when the wiring conductor 3 is embedded only in the upper or lower insulating layer 2, As the thickness increases, in order to ensure insulation, it is necessary to increase the thickness of the insulating layer 2, whereas each wiring layer 3 is embedded in both the upper side and the lower side to saturate each insulating layer. Since the insulation can be maintained even if the thickness of 2 is reduced, the thickness of the wiring conductor 3 can be increased without increasing the thickness of the multilayer wiring board.

配線導体3および貫通導体6の形成方法は、例えば、まず絶縁層2の表面に配線導体3が埋め込まれるように配線導体3用の配線パターン形状の凹部を形成するとともに貫通導体6用の貫通孔7を形成する。   The method for forming the wiring conductor 3 and the through conductor 6 is, for example, first forming a wiring pattern-shaped recess for the wiring conductor 3 so that the wiring conductor 3 is embedded in the surface of the insulating layer 2 and through holes for the through conductor 6. 7 is formed.

配線導体3用の凹部は、例えば金属膜をマスクとして絶縁層2の上面側を酸素プラズマ処理することによって絶縁層2の上面側の一部を除去することにより形成される。また、貫通孔7は、例えばレーザを使い、配線導体3用の凹部の所定位置の絶縁層2を除去することにより形成される。特に、貫通孔7の開口の径が小さな場合は、貫通孔7の内壁面の角度をコントロールすることが容易で貫通孔7の内壁面が滑らかに加工される紫外線レーザ等で形成することが望ましい。   The recess for the wiring conductor 3 is formed, for example, by removing a part on the upper surface side of the insulating layer 2 by performing oxygen plasma treatment on the upper surface side of the insulating layer 2 using a metal film as a mask. Further, the through hole 7 is formed by removing the insulating layer 2 at a predetermined position of the concave portion for the wiring conductor 3 using, for example, a laser. In particular, when the opening diameter of the through hole 7 is small, it is desirable to control the angle of the inner wall surface of the through hole 7 and to form the inner wall surface of the through hole 7 with an ultraviolet laser or the like that is processed smoothly. .

次に、絶縁層2の上面の全面に、クロム,モリブデン,チタン等から成る拡散防止層(バリア層)とその上に被着された主に銅から成る銅層とで構成された下地導体層を無電解めっき法やスパッタリング法等によって形成する。そして、下地導体層が形成された基板1をフォトリソグラフィ法を用いて配線導体3となる部分以外を覆うようにレジストパターンを形成した後、配線導体3および貫通導体6の主導体層の部分を、電解めっき法にて形成する。その後、レジストパターンを除去し、レジストパターンにより覆われていた余分な下地導体層をケミカルエッチング法やドライエッチング法等にて除去することにより本発明の絶縁層2に一部埋め込まれた配線導体3が形成される。   Next, an underlying conductor layer composed of a diffusion prevention layer (barrier layer) made of chromium, molybdenum, titanium or the like and a copper layer mainly made of copper deposited thereon on the entire upper surface of the insulating layer 2 Is formed by electroless plating or sputtering. Then, a resist pattern is formed on the substrate 1 on which the base conductor layer is formed so as to cover the portion other than the portion that becomes the wiring conductor 3 by using a photolithography method, and then the main conductor layer portion of the wiring conductor 3 and the through conductor 6 is formed. And formed by electrolytic plating. Thereafter, the resist pattern is removed, and the excess underlying conductor layer covered with the resist pattern is removed by a chemical etching method, a dry etching method, or the like, whereby the wiring conductor 3 partially embedded in the insulating layer 2 of the present invention. Is formed.

また、上側および下側の両方の絶縁層2に配線導体3を埋め込むには、上側の絶縁層2に配線導体3用の配線パターン形状の凹部を形成し、下側の絶縁層2には、上記と同様の方法で配線導体3を作成した後に、その上側と下側の絶縁層2を積層することで、本発明の上側および下側の両方の絶縁層2に埋め込まれた配線導体3に加工することができる。なお、配線導体3の埋め込みの程度は、絶縁層2に形成する凹部の深さを調節することにより調整することができる。   In order to embed the wiring conductor 3 in both the upper and lower insulating layers 2, a concave portion having a wiring pattern shape for the wiring conductor 3 is formed in the upper insulating layer 2. After the wiring conductor 3 is formed by the same method as described above, the upper and lower insulating layers 2 are laminated, so that the wiring conductor 3 embedded in both the upper and lower insulating layers 2 of the present invention is formed. Can be processed. The degree of embedding of the wiring conductor 3 can be adjusted by adjusting the depth of the recess formed in the insulating layer 2.

なお、多層配線基板の最上層となる絶縁層2の表面に形成される配線導体3の主導体層には、電気的な特性や接続信頼性の観点から、主導体層が銅層から成るものとすることがよく、また、その場合には接続信頼性および耐環境信頼性の観点から主導体層の上にニッケル層や金層を形成するとよい。   In addition, the main conductor layer of the wiring conductor 3 formed on the surface of the insulating layer 2 which is the uppermost layer of the multilayer wiring board is composed of a copper layer from the viewpoint of electrical characteristics and connection reliability. In that case, a nickel layer or a gold layer is preferably formed on the main conductor layer from the viewpoint of connection reliability and environmental resistance reliability.

かくして、本発明の多層配線基板によれば、最上層に位置する貫通孔7は貫通導体6で埋め込まれるとともに最上層の貫通孔7の直上の配線導体3に半導体集積回路を実装するとともに、多層配線基板を外部電気回路に電気的に接続することによって半導体装置となる。   Thus, according to the multilayer wiring board of the present invention, the through hole 7 positioned in the uppermost layer is embedded with the through conductor 6, and the semiconductor integrated circuit is mounted on the wiring conductor 3 immediately above the uppermost through hole 7, and A semiconductor device is obtained by electrically connecting the wiring board to an external electric circuit.

また、本発明の多層配線基板によれば、最上層に位置する絶縁層2に配線導体3の一部が埋設されるように形成された配線導体3と接触させてプローブを配置、固定するとともに、多層配線基板を外部電気回路に電気的および機械的に接続することによって、大電流に対応した半導体集積回路等の電気的な検査をするためのプローブカードとなる。   According to the multilayer wiring board of the present invention, the probe is arranged and fixed in contact with the wiring conductor 3 formed so that a part of the wiring conductor 3 is embedded in the insulating layer 2 positioned at the uppermost layer. By connecting the multilayer wiring board electrically and mechanically to an external electric circuit, a probe card for electrically inspecting a semiconductor integrated circuit or the like corresponding to a large current is obtained.

なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば、上述の例においては、絶縁層2は絶縁フィルム層4と絶縁性接着剤層5との2層構造のものを多層に積層したが、例えば絶縁フィルム層4を中心に上下に絶縁性接着剤層5を形成したものを多層に積層したものを用いてもよい。   It should be noted that the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned example, the insulating layer 2 has a two-layer structure of the insulating film layer 4 and the insulating adhesive layer 5 laminated in multiple layers. You may use what formed the agent layer 5 and laminated | stacked in multiple layers.

本発明の多層配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the multilayer wiring board of this invention. 図1の多層配線基板における配線導体の周辺の状態を示す要部拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a main part showing a state around a wiring conductor in the multilayer wiring board of FIG. 1.

符号の説明Explanation of symbols

1・・・・基板
2・・・・絶縁層
3・・・・配線導体
4・・・・絶縁フィルム層
5・・・・絶縁接着剤層
6・・・・貫通導体
7・・・・貫通孔
DESCRIPTION OF SYMBOLS 1 ... substrate 2 ... insulating layer 3 ... wiring conductor 4 ... insulating film layer 5 ... insulating adhesive layer 6 ... penetrating conductor 7 ... penetrating Hole

Claims (2)

樹脂から成る絶縁層と配線導体とが交互に複数積層されて成る多層配線基板であって、前記配線導体は、平面視で前記絶縁層の外周部において前記絶縁層に一部が埋め込まれていることを特徴とする多層配線基板。 A multilayer wiring board in which a plurality of insulating layers made of resin and wiring conductors are alternately stacked, wherein the wiring conductor is partially embedded in the insulating layer at an outer peripheral portion of the insulating layer in plan view A multilayer wiring board characterized by that. 前記配線導体は、前記絶縁層の層間に形成されるとともに前記配線導体の上側および下側の両方の前記絶縁層に埋め込まれていることを特徴とする請求項1記載の多層配線基板。 2. The multilayer wiring board according to claim 1, wherein the wiring conductor is formed between layers of the insulating layer and embedded in both of the insulating layers above and below the wiring conductor.
JP2004074083A 2004-03-16 2004-03-16 Multilayer wiring board Pending JP2005268259A (en)

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JP2011228727A (en) * 2011-06-10 2011-11-10 Kyocera Corp Wiring board, electronic equipment with the wiring board, and probe card
JP5660272B2 (en) * 2007-03-30 2015-01-28 住友ベークライト株式会社 Flip chip semiconductor package connection structure, build-up layer material, sealing resin composition, and circuit board
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