JP2005260081A5 - - Google Patents
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- Publication number
- JP2005260081A5 JP2005260081A5 JP2004071296A JP2004071296A JP2005260081A5 JP 2005260081 A5 JP2005260081 A5 JP 2005260081A5 JP 2004071296 A JP2004071296 A JP 2004071296A JP 2004071296 A JP2004071296 A JP 2004071296A JP 2005260081 A5 JP2005260081 A5 JP 2005260081A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- via hole
- layer
- insulating film
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 65
- 239000004065 semiconductor Substances 0.000 claims 54
- 239000000758 substrate Substances 0.000 claims 20
- 239000011241 protective layer Substances 0.000 claims 17
- 230000003014 reinforcing effect Effects 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 12
- 230000004888 barrier function Effects 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- 238000007788 roughening Methods 0.000 claims 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004071296A JP4307296B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004071296A JP4307296B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005260081A JP2005260081A (ja) | 2005-09-22 |
| JP2005260081A5 true JP2005260081A5 (enrdf_load_stackoverflow) | 2007-04-19 |
| JP4307296B2 JP4307296B2 (ja) | 2009-08-05 |
Family
ID=35085499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004071296A Expired - Fee Related JP4307296B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4307296B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4403424B2 (ja) | 2006-11-30 | 2010-01-27 | ソニー株式会社 | 固体撮像装置 |
| JP4765947B2 (ja) * | 2007-01-25 | 2011-09-07 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
| US8749065B2 (en) | 2007-01-25 | 2014-06-10 | Tera Probe, Inc. | Semiconductor device comprising electromigration prevention film and manufacturing method thereof |
| JPWO2010070826A1 (ja) * | 2008-12-17 | 2012-05-24 | パナソニック株式会社 | 貫通電極の形成方法及び半導体装置 |
| JP5136515B2 (ja) * | 2009-05-27 | 2013-02-06 | ソニー株式会社 | 固体撮像装置 |
| JP2011171567A (ja) * | 2010-02-19 | 2011-09-01 | Elpida Memory Inc | 基板構造物の製造方法及び半導体装置の製造方法 |
| KR102031908B1 (ko) * | 2013-02-06 | 2019-10-14 | 삼성전자주식회사 | 관통 전극을 갖는 반도체 소자 및 그 형성 방법 |
| KR101520433B1 (ko) | 2013-07-08 | 2015-05-14 | 주식회사 레이언스 | 이미지센서 및 이의 제조방법 |
| JP7395302B2 (ja) * | 2019-09-30 | 2023-12-11 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN115701882A (zh) * | 2021-07-19 | 2023-02-14 | 福州京东方光电科技有限公司 | 阵列基板的制备方法及显示面板的制备方法 |
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2004
- 2004-03-12 JP JP2004071296A patent/JP4307296B2/ja not_active Expired - Fee Related