JP2005256119A5 - - Google Patents
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- Publication number
- JP2005256119A5 JP2005256119A5 JP2004071592A JP2004071592A JP2005256119A5 JP 2005256119 A5 JP2005256119 A5 JP 2005256119A5 JP 2004071592 A JP2004071592 A JP 2004071592A JP 2004071592 A JP2004071592 A JP 2004071592A JP 2005256119 A5 JP2005256119 A5 JP 2005256119A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- thin film
- film
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 304
- 239000010409 thin film Substances 0.000 claims description 223
- 239000010408 film Substances 0.000 claims description 159
- 239000013077 target material Substances 0.000 claims description 98
- 238000005530 etching Methods 0.000 claims description 96
- 239000007789 gas Substances 0.000 claims description 88
- 238000006243 chemical reaction Methods 0.000 claims description 76
- 238000010884 ion-beam technique Methods 0.000 claims description 75
- 150000002500 ions Chemical class 0.000 claims description 71
- 239000002245 particle Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 34
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 230000005674 electromagnetic induction Effects 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 42
- 239000002184 metal Substances 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 36
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 19
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 16
- 229910001882 dioxygen Inorganic materials 0.000 description 16
- 239000007769 metal material Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- -1 atom ions Chemical class 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- 230000000087 stabilizing effect Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009790 rate-determining step (RDS) Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004071592A JP2005256119A (ja) | 2004-03-12 | 2004-03-12 | 成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004071592A JP2005256119A (ja) | 2004-03-12 | 2004-03-12 | 成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005256119A JP2005256119A (ja) | 2005-09-22 |
| JP2005256119A5 true JP2005256119A5 (enExample) | 2007-04-19 |
Family
ID=35082143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004071592A Pending JP2005256119A (ja) | 2004-03-12 | 2004-03-12 | 成膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005256119A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070095661A1 (en) | 2005-10-31 | 2007-05-03 | Yi Wang | Method of making, and, analyte sensor |
| JP4988282B2 (ja) * | 2006-09-22 | 2012-08-01 | キヤノン電子株式会社 | 光学フィルタ |
| CN102692662B (zh) | 2006-08-30 | 2015-06-24 | 佳能电子株式会社 | 光学滤光器以及摄像装置 |
| JP2009091603A (ja) * | 2007-10-04 | 2009-04-30 | Ulvac Japan Ltd | 光学薄膜の成膜装置及びその制御方法 |
| DE202010001497U1 (de) * | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
| JP7382809B2 (ja) * | 2019-12-02 | 2023-11-17 | キヤノントッキ株式会社 | 成膜方法及び成膜装置 |
-
2004
- 2004-03-12 JP JP2004071592A patent/JP2005256119A/ja active Pending
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