JP2005251800A - 成膜用リング、半導体装置の製造装置、および半導体装置の製造方法 - Google Patents
成膜用リング、半導体装置の製造装置、および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 118
- 238000004519 manufacturing process Methods 0.000 title claims description 69
- 230000015572 biosynthetic process Effects 0.000 title abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 230000005684 electric field Effects 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 31
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 25
- 239000002344 surface layer Substances 0.000 abstract description 6
- 239000011800 void material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 102
- 239000000919 ceramic Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 239000002994 raw material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5093—Coaxial electrodes
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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Abstract
【解決手段】成膜用リングは、絶縁性を有する材料により形成されるリング本体14を具備する。リング本体14は、プラズマ状態の原料ガスを用いる成膜処理が施される基板2の縁部に沿う環形状で、かつ、内縁部14aがその外側の部分よりも高く形成されている。それとともに、リング本体14は、内縁部14aの上面が基板2の成膜処理が施される側の主面2aと同等以下の高さに配置される。
【選択図】 図2
Description
先ず、本発明に係る第1実施形態を図1〜図3を参照しつつ説明する。図1は、本実施形態に係る半導体装置の製造装置を簡略化して示す断面図である。図2は、図1に示す半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。図3(a)は、本実施形態に係る成膜用リングをその上方から臨んで示す平面図であり、図3(b)は、図3(a)中破断線A−A’に沿って示す断面図である。
次に、本発明に係る第2実施形態を図4を参照しつつ説明する。図4は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
次に、本発明に係る第3実施形態を図5〜図7を参照しつつ説明する。図5は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。図6は、第1〜第3の各実施形態に係る半導体装置の製造装置による凹部の埋め込み特性をグラフを用いて示す図である。図7は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の付近に発生する電界をシミュレーションした結果を簡略化して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
次に、本発明に係る第4実施形態を図8を参照しつつ説明する。図8は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
次に、本発明に係る第5実施形態を図9を参照しつつ説明する。図9は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
次に、本発明に係る第6実施形態を図10を参照しつつ説明する。図10は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
次に、本発明に係る第7実施形態を図11を参照しつつ説明する。図11は、本実施形態に係る半導体装置の製造装置の成膜用リングおよび半導体基板の縁部付近を拡大して示す断面図である。なお、第1実施形態と同一部分には同一符号を付してその詳しい説明を省略する。
Claims (5)
- 絶縁性を有する材料により、プラズマ状態の原料ガスを用いる成膜処理が施される基板の縁部に沿う環形状で、かつ、内縁部がその外側の部分よりも高く形成されているとともに、前記内縁部の上面が前記基板の前記成膜処理が施される側の主面と同等以下の高さに配置されるリング本体、を具備することを特徴とする成膜用リング。
- 前記リング本体の前記内縁部の外側の部分に、前記リング本体の上面から凹まされて第1の凹部が形成されていることを特徴とする請求項1に記載の成膜用リング。
- 絶縁性を有する材料により前記リング本体の前記内縁部をその外側から囲む環形状に形成されているとともに、前記リング本体の上面から離間され、かつ、前記リング本体の前記内縁部の上面と同等以下の高さに配置される補助リングを、さらに具備することを特徴とする請求項1に記載の成膜用リング。
- 請求項1〜3のうちのいずれかに記載の成膜用リングと、
成膜処理が施される半導体基板が収容されるとともに、前記成膜処理に用いられる原料ガスが内部に供給される処理容器と、
この処理容器内に供給された前記原料ガスに電圧を印可して前記処理容器内に前記原料ガスのプラズマ状態を生成するプラズマ生成用電源と、
前記処理容器内に設けられて前記半導体基板を支持するとともに、前記成膜用リングの前記リング本体の内縁部が前記半導体基板の縁部に沿って、かつ、前記内縁部の上面が前記半導体基板の前記成膜処理が施される側の主面と同等以下の高さに位置して、前記成膜用リングが取り付けられる基板支持具と、
を具備することを特徴とする半導体装置の製造装置。 - プラズマ状態の原料ガスを用いる成膜処理が施される半導体基板の縁部付近に、前記半導体基板の表面に沿って前記半導体基板の前記成膜処理が施される側の主面の上方から前記主面の下方に向かって下がるように電界を形成しつつ、前記原料ガスを前記主面に向けて供給する工程、を含むことを特徴とする半導体装置の製造方法。
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JP2004056453A JP3981091B2 (ja) | 2004-03-01 | 2004-03-01 | 成膜用リングおよび半導体装置の製造装置 |
US11/067,640 US7247888B2 (en) | 2004-03-01 | 2005-02-28 | Film forming ring and method of manufacturing semiconductor device |
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US10968513B2 (en) | 2016-06-24 | 2021-04-06 | Tokyo Electron Limited | Plasma film-forming apparatus and substrate pedestal |
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US9659758B2 (en) * | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
US9890455B2 (en) * | 2010-10-29 | 2018-02-13 | Applied Materials, Inc. | Pre-heat ring designs to increase deposition uniformity and substrate throughput |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
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TW277139B (ja) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
JP3173693B2 (ja) | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
JP3231202B2 (ja) | 1994-12-09 | 2001-11-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US6117349A (en) * | 1998-08-28 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite shadow ring equipped with a sacrificial inner ring |
JP2001007090A (ja) | 1999-06-25 | 2001-01-12 | Mitsubishi Materials Corp | プラズマエッチング装置用フォーカスリング |
US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
JP4592916B2 (ja) | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
JP2002110646A (ja) | 2000-09-29 | 2002-04-12 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4686867B2 (ja) | 2001-02-20 | 2011-05-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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US10968513B2 (en) | 2016-06-24 | 2021-04-06 | Tokyo Electron Limited | Plasma film-forming apparatus and substrate pedestal |
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US7247888B2 (en) | 2007-07-24 |
US20050191811A1 (en) | 2005-09-01 |
JP3981091B2 (ja) | 2007-09-26 |
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