JP2005244001A - 圧電薄膜の形成方法 - Google Patents
圧電薄膜の形成方法 Download PDFInfo
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- JP2005244001A JP2005244001A JP2004053052A JP2004053052A JP2005244001A JP 2005244001 A JP2005244001 A JP 2005244001A JP 2004053052 A JP2004053052 A JP 2004053052A JP 2004053052 A JP2004053052 A JP 2004053052A JP 2005244001 A JP2005244001 A JP 2005244001A
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- thin film
- piezoelectric thin
- piezoelectric
- processing
- forming
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Abstract
【解決手段】 課題を解決するために本発明は、結晶を気相成長法を用いて基台上に薄膜結晶を堆積して圧電薄膜を形成する手段であって、前記圧電薄膜を中心部分を厚く、外周部に従って薄く形成させるために、前記圧電薄膜の中心部分に多く堆積させ、外周に従って少なく堆積量を加減して形成することにより課題を解決する。
【選択図】 図1
Description
2 薄膜結晶
3 ノズル
Claims (3)
- 結晶を気相成長法を用いて基台上に薄膜結晶を堆積して圧電薄膜を形成する手段であって、前記圧電薄膜を中心部分を厚く、外周部に従って薄く形成させるために、前記圧電薄膜の中心部分に多く堆積させ、外周に従って少なく堆積量を加減して形成することを特徴とする圧電薄膜の形成方法。
- 請求項1の記載で堆積する圧電薄膜の原料ガスを吐出しながらノズルを基台から徐々に遠ざけることを特徴とする圧電薄膜の形成方法。
- 請求項1と請求項2の製造方法により、圧電薄膜をベベリング加工することを特徴とする圧電薄膜の形成方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2004053052A JP4685360B2 (ja) | 2004-02-27 | 2004-02-27 | 圧電薄膜の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004053052A JP4685360B2 (ja) | 2004-02-27 | 2004-02-27 | 圧電薄膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005244001A true JP2005244001A (ja) | 2005-09-08 |
JP4685360B2 JP4685360B2 (ja) | 2011-05-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004053052A Expired - Fee Related JP4685360B2 (ja) | 2004-02-27 | 2004-02-27 | 圧電薄膜の形成方法 |
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JP (1) | JP4685360B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007271284A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Kinseki Corp | Qcmセンサ素子及びqcmセンサ素子の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273691A (ja) * | 1985-09-26 | 1987-04-04 | Furukawa Electric Co Ltd:The | 半導体発光装置の製造方法 |
JPH0990104A (ja) * | 1995-09-25 | 1997-04-04 | Sony Corp | 光学部品およびその製造方法 |
JPH10150185A (ja) * | 1996-11-20 | 1998-06-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
2004
- 2004-02-27 JP JP2004053052A patent/JP4685360B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273691A (ja) * | 1985-09-26 | 1987-04-04 | Furukawa Electric Co Ltd:The | 半導体発光装置の製造方法 |
JPH0990104A (ja) * | 1995-09-25 | 1997-04-04 | Sony Corp | 光学部品およびその製造方法 |
JPH10150185A (ja) * | 1996-11-20 | 1998-06-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007271284A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Kinseki Corp | Qcmセンサ素子及びqcmセンサ素子の製造方法 |
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JP4685360B2 (ja) | 2011-05-18 |
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