JP2005226153A - プラズマ支援スパッタ成膜装置 - Google Patents
プラズマ支援スパッタ成膜装置 Download PDFInfo
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- JP2005226153A JP2005226153A JP2004099398A JP2004099398A JP2005226153A JP 2005226153 A JP2005226153 A JP 2005226153A JP 2004099398 A JP2004099398 A JP 2004099398A JP 2004099398 A JP2004099398 A JP 2004099398A JP 2005226153 A JP2005226153 A JP 2005226153A
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- Prior art keywords
- plasma
- wafer
- electrode
- donut
- shaped electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 8
- 235000012489 doughnuts Nutrition 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000009987 spinning Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 43
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】 プラズマ支援スパッタ成膜装置は次の構成からなる。プラズマの生成のため使用されるプロセスガスが導入される反応容器1と、プラズマによってスパッタされる物質で作られるドーナツ型電極であって、その下面はウェハーの表面に対し傾斜されているドーナツ型電極2と、ドーナツ型電極の上方の円の上を移動しながらその中心軸で回転する回転プレートであって、その下面に取付けられかつドーナツ型電極の表面に平行なマグネット配列4を含む回転プレート3と、ドーナツ型電極に接続された電力源10と、そして膜堆積のためウェハー9を配置するためのウェハーホルダ5であって、膜堆積の間停止状態にあるウェハーホルダとから構成される。
【選択図】 図1
Description
2 ドーナツ型電極
3 回転プレート
4 マグネット配列
5 ウェハーホルダ
8 絶縁材
9 ウェハー
10 DC電源
11 金属電極
12 誘電体層(ESC)
13 誘電体層
19a 円形マグネット
19b 円形マグネット
Claims (4)
- プラズマの生成に使用されるプロセスガスが導入される反応容器と、
前記プラズマによってスパッタされる必要のある物質で作られ、その下面がウェハーの表面に対して傾斜されたドーナツ型電極と、
ドーナツ型電極の上側を円の上を移動しながらその中心軸で回転運動し、下面に取り付けられかつ前記ドーナツ型電極の表面に平行なマグネット配列を含む回転プレートと、
前記ドーナツ型電極に接続された電力源と、そして、
膜堆積のため前記ウェハーを配置し、膜堆積の間静止しているウェハーホルダと、
から構成されるプラズマ支援スパッタ成膜装置。 - 前記回転プレートの下面に設けられた前記マグネット配列は回転軸の周りに対称的である請求項1記載のプラズマ支援スパッタ成膜装置。
- 回転プレートの下面に設けられた前記マグネット配列はその回転軸の周りに非対称である請求項1記載のプラズマ支援スパッタ成膜装置。
- プラズマの生成に使用されるプロセスガスが導入される反応容器と、
前記プラズマによってスパッタされる必要のある物質で作られ、その下面がウェハーの表面に対して傾斜されたドーナツ型電極と、
前記ドーナツ型電極の下側に1つまたはそれ以上の閉じたループ状磁束線を生成するため、前記電極に対向し、交互の磁極を有しかつ異なるに直径を持ち、前記ドーナツ型電極の上方に配置される2つまたはそれ以上の円形のマグネットと、
前記ドーナツ型電極に接続された電力源と、そして、
膜堆積のため前記ウェハーを配置し、膜堆積の間静止しているウェハーホルダと、
から構成されるプラズマ支援スパッタ成膜装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004099398A JP4541014B2 (ja) | 2004-01-13 | 2004-03-30 | プラズマ支援スパッタ成膜装置 |
TW093139669A TW200523394A (en) | 2004-01-13 | 2004-12-20 | Plasma-assisted sputter deposition system |
GB0500118A GB2410034B (en) | 2004-01-13 | 2005-01-06 | Plasma-assisted sputter deposition system |
US10/905,574 US7625472B2 (en) | 2004-01-13 | 2005-01-11 | Plasma-assisted sputter deposition system |
KR1020050003368A KR20050074334A (ko) | 2004-01-13 | 2005-01-13 | 플라즈마 지원 스퍼터 성막 장치 |
FR0506044A FR2880632B1 (fr) | 2004-01-13 | 2005-06-15 | Systeme de depot par pulverisation cathodique aide par plasma |
GB0713773A GB2440256A (en) | 2004-01-13 | 2007-07-16 | Plasma assisted sputter deposition. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004005866 | 2004-01-13 | ||
JP2004099398A JP4541014B2 (ja) | 2004-01-13 | 2004-03-30 | プラズマ支援スパッタ成膜装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009215434A Division JP2009299191A (ja) | 2004-01-13 | 2009-09-17 | プラズマ支援スパッタ成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005226153A true JP2005226153A (ja) | 2005-08-25 |
JP4541014B2 JP4541014B2 (ja) | 2010-09-08 |
Family
ID=34197279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004099398A Expired - Fee Related JP4541014B2 (ja) | 2004-01-13 | 2004-03-30 | プラズマ支援スパッタ成膜装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7625472B2 (ja) |
JP (1) | JP4541014B2 (ja) |
KR (1) | KR20050074334A (ja) |
FR (1) | FR2880632B1 (ja) |
GB (1) | GB2410034B (ja) |
TW (1) | TW200523394A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006037127A (ja) * | 2004-07-23 | 2006-02-09 | Cyg Gijutsu Kenkyusho Kk | スパッタ電極構造 |
JP2016164287A (ja) * | 2015-03-06 | 2016-09-08 | 東京エレクトロン株式会社 | 成膜装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8920888B2 (en) * | 2012-04-04 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma process, film deposition method and system using rotary chuck |
KR102355296B1 (ko) * | 2017-08-08 | 2022-01-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치 |
CN112323037A (zh) * | 2020-11-09 | 2021-02-05 | 上海兆九光电技术有限公司 | 镀膜真空室工件旋转装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6217175A (ja) * | 1985-07-16 | 1987-01-26 | Nissin Electric Co Ltd | スパツタリング装置 |
JPH02111878A (ja) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH051373A (ja) * | 1991-03-25 | 1993-01-08 | Shin Meiwa Ind Co Ltd | スパツタリング装置 |
JPH10212573A (ja) * | 1997-01-14 | 1998-08-11 | Applied Materials Inc | 均一な低粒子堆積を生成するイオン化pvdソース |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
US5126029A (en) * | 1990-12-27 | 1992-06-30 | Intel Corporation | Apparatus and method for achieving via step coverage symmetry |
JPH05189762A (ja) | 1992-01-09 | 1993-07-30 | Hitachi Ltd | 磁気記録媒体の製造方法及び製造装置 |
US5378341A (en) | 1993-10-13 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Air Force | Conical magnetron sputter source |
JPH07126847A (ja) | 1993-10-29 | 1995-05-16 | Shin Etsu Chem Co Ltd | スパッタ電極磁界形成方法 |
JP3935231B2 (ja) * | 1996-09-18 | 2007-06-20 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6235170B1 (en) | 1998-06-10 | 2001-05-22 | David A. Glocker | Conical sputtering target |
US6432286B1 (en) | 1998-06-10 | 2002-08-13 | David A. Glocker | Conical sputtering target |
US6238528B1 (en) * | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
JP2002167661A (ja) | 2000-11-30 | 2002-06-11 | Anelva Corp | 磁性多層膜作製装置 |
JP4502540B2 (ja) | 2001-03-29 | 2010-07-14 | キヤノンアネルバ株式会社 | 光学多層膜干渉フィルタの作製装置および作製方法 |
US6613199B1 (en) | 2001-10-25 | 2003-09-02 | Novellus Systems, Inc. | Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron |
JP2003141719A (ja) * | 2001-10-30 | 2003-05-16 | Anelva Corp | スパッタリング装置及び薄膜形成方法 |
US6841050B2 (en) * | 2002-05-21 | 2005-01-11 | Applied Materials, Inc. | Small planetary magnetron |
US6852202B2 (en) * | 2002-05-21 | 2005-02-08 | Applied Materials, Inc. | Small epicyclic magnetron with controlled radial sputtering profile |
-
2004
- 2004-03-30 JP JP2004099398A patent/JP4541014B2/ja not_active Expired - Fee Related
- 2004-12-20 TW TW093139669A patent/TW200523394A/zh unknown
-
2005
- 2005-01-06 GB GB0500118A patent/GB2410034B/en not_active Expired - Fee Related
- 2005-01-11 US US10/905,574 patent/US7625472B2/en not_active Expired - Fee Related
- 2005-01-13 KR KR1020050003368A patent/KR20050074334A/ko not_active Application Discontinuation
- 2005-06-15 FR FR0506044A patent/FR2880632B1/fr not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6217175A (ja) * | 1985-07-16 | 1987-01-26 | Nissin Electric Co Ltd | スパツタリング装置 |
JPH02111878A (ja) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH051373A (ja) * | 1991-03-25 | 1993-01-08 | Shin Meiwa Ind Co Ltd | スパツタリング装置 |
JPH10212573A (ja) * | 1997-01-14 | 1998-08-11 | Applied Materials Inc | 均一な低粒子堆積を生成するイオン化pvdソース |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006037127A (ja) * | 2004-07-23 | 2006-02-09 | Cyg Gijutsu Kenkyusho Kk | スパッタ電極構造 |
JP2016164287A (ja) * | 2015-03-06 | 2016-09-08 | 東京エレクトロン株式会社 | 成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
GB2410034B (en) | 2008-06-11 |
KR20050074334A (ko) | 2005-07-18 |
FR2880632B1 (fr) | 2007-11-23 |
FR2880632A1 (fr) | 2006-07-14 |
GB2410034A (en) | 2005-07-20 |
GB0500118D0 (en) | 2005-02-09 |
JP4541014B2 (ja) | 2010-09-08 |
US7625472B2 (en) | 2009-12-01 |
TW200523394A (en) | 2005-07-16 |
US20050150457A1 (en) | 2005-07-14 |
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