JP2005217096A - Subcarrier of photo-semiconductor element and photo-semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a subcarrier and a photo-semiconductor device in which an electric signal obtained through photo-electric conversion can be accurately transmitted under the high-speed and high-frequency condition, manufacturing yield and productivity are high, and normal and stable operation can be ensured for a long period of time. <P>SOLUTION: The subcarrier of the photo-semiconductor element comprises a rectangular parallelopiped insulating base board 13 with a concave 15 formed toward the upper surface from a side surface, and a branching portion branched to a couple of sections toward the upper surface from the upper end of the side surface; a mounting portion 14a of a photo-semiconductor element formed at the bottom surface of one side surface of the concave portion 15; a first wiring conductor 14b formed toward the bottom surface of one branching portion of the concave portion 15a from the mounting portion 14a; a second wiring conductor 14c formed toward the bottom surface of the other branching portion of the concave portion 15 from a region adjacent to the mounting portion 14a at the bottom surface of one side surface of the concave portion 15; and a grounding conductor layer 16 formed at a region between a couple of branching portions of the insulating base board 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a subcarrier for mounting an optical semiconductor element such as a photodiode (PD) and a semiconductor laser (LD), and an optical semiconductor device used in the field of optical communication.

  Conventionally, in the optical communication field, an optical semiconductor device is used for electro-optically converting a high-frequency signal and outputting it as an optical signal to an optical fiber or the like, and a bit rate of data communication exceeding 10 Gbit / second (bps). Those with are becoming widely used.

  FIG. 3 shows a conventional optical semiconductor device equipped with an optical semiconductor element such as PD and LD. As shown in FIG. 3, 101 is a subcarrier for mounting an optical semiconductor element, 102 is a PD, 103a is a first bonding wire for electrically connecting the electrode of PD102 and the wiring conductor on the surface of the subcarrier 101. , 103b is a second bonding wire for electrically connecting the wiring conductor on the surface of the subcarrier 101 and the circuit wiring of the circuit board 120. Reference numeral 104 denotes an LD, 105 denotes a submount for mounting the LD, 106 denotes a temperature measuring element, 107 denotes a Peltier element, and 108 denotes a base body having a recess at the center of the upper surface made of ceramics or the like. Further, 109 is a lid made of metal, 110 is a cylindrical optical fiber fixing member (hereinafter also referred to as a fixing member) made of metal, 111 is an optical fiber, 112 is an external lead terminal, 120 is an optical lead by PD102. This is a circuit board on which circuit wiring such as a circuit for amplifying an electrical signal that has been electrically converted and facilitating connection to an external lead terminal and a line conductor for impedance matching is formed.

  As shown in FIG. 4, the subcarrier 101 has a functional portion made of a conductor layer formed on the surface of a substantially rectangular parallelepiped insulating base 113 made of ceramics or the like, and a PD is mounted on one side of the insulating base 113. A mounting portion 114a is formed, a first wiring conductor 114b is formed from the mounting portion 114a of the insulating base 113 to the upper surface, and a second wiring conductor 114c is formed from a portion close to the mounting portion 114a to the upper surface. Yes. Further, a lower conductor layer 114f bonded and fixed to the bottom surface of the recess of the base 108 (hereinafter also referred to as a mounting surface) via a gold (Au) -tin (Sn) brazing material or the like is provided on the lower surface of the insulating base 113. Is formed.

  The PD 102 is bonded and fixed to the mounting portion 114a of the subcarrier 101 via an Au—Sn brazing material or the like. For example, in the case of an optical semiconductor device that converts an electrical signal into an optical signal and outputs the subcarrier 101 on which the PD 102 is mounted, the light receiving surface of the PD 102 monitors the light emitted from the rear of the LD 104 on the mounting surface of the base 108. Thus, it is bonded and fixed so as to be optically coupled to the LD 104. A submount 105 on which the LD 104 and the temperature measuring element 106 are mounted is placed on the mounting surface of the base 108 via the Peltier element 107.

  The optical fiber 111 transmits light emitted from the LD 104 to the outside of the optical semiconductor device.

  An external lead terminal 112 is fixed to the lower surface of the base 108, and the PD 102, the LD 104, the temperature measuring element 106, the Peltier element 107, and the like are electrically connected. Further, the lid 109 is joined to the upper surface of the base 108 so as to seal the mounting surface by a seam welding method or the like, so that the optical semiconductor device is hermetically sealed.

  This optical semiconductor device is manufactured as follows. First, the PD 102 is bonded and fixed to the mounting portion 114a of the subcarrier 101 via a low melting point brazing material made of Au—Sn alloy or the like, thereby fixing the PD 102 and one electrode of the PD 102 to the first wiring conductor 114b. Connecting. Next, the other electrode of the PD 102 and the second wiring conductor 114c are electrically connected through a first bonding wire 103a made of Au, aluminum (Al), or the like. Then, the subcarrier 101 on which the PD 102 is mounted is bonded and fixed to the mounting surface of the base 108 with the lower conductor layer 114f via a brazing material made of Au—Sn alloy, Sn—lead (Pb) alloy, or the like. Electrically connected to 108. Next, the first wiring conductor 114b and the second wiring conductor 114c of the subcarrier 101 are electrically connected to the circuit wiring of the circuit board 120 by a second bonding wire 103b made of Au, Al, or the like. Then, the submount 105 in which the LD 104 and the temperature measuring element 106 are bonded and fixed to the upper surface via a brazing material, and the upper surface of the Peltier element 107 that is bonded and fixed in advance to the mounting surface of the base 108 via the brazing material via the brazing material. Adhere and fix.

  In addition, such an optical semiconductor device has an optical semiconductor element such as PD102 or LD104, a temperature measuring element 106, a Peltier element 107, a circuit board 120, etc., which are bonded and fixed to the mounting surface of the base 108 with high density. In view of the configuration, in recent years, there has been a demand for components that can be automatically mounted without degrading performance for the purpose of reducing the size and weight of optical semiconductor devices and improving mass productivity.

However, in the subcarrier 101 on which the PD 102 is mounted, all the wiring conductors including the mounting portion 114a and the first bonding wires 103a, when mounted on the mounting surface of the base body 108 using a transfer jig or the like. The PD 102 is exposed and protrudes without being protected from the outer peripheral surface of the insulating base 113. Therefore, there has been a problem that these exposed and protruding portions are destroyed or deformed by a production facility or the like during the assembly process of the optical semiconductor device. In order to solve these problems, a structure has been proposed in which the outer peripheral portion of the surface on which the PD 102 of the insulating base 113 is mounted is surrounded by a ceramic member that is thicker than the thickness of the PD 102 (see, for example, Patent Document 4).
Japanese Patent Laid-Open No. 5-145091 JP 2001-15773 Japanese Patent Laid-Open No. 2002-141600 JP-A-4-352368

  The function of the subcarrier 101 on which the PD 102 is mounted is to transmit the electrical signal, which is optical-electrically converted from the optical signal by the PD 102, to the control circuit accurately without delay, but the electrical signal cannot be transmitted satisfactorily. In this case, since the conversion efficiency of the PD 102 decreases, the transmission speed of the optical signal must be suppressed. That is, the transmission characteristics as an optical semiconductor device are deteriorated.

  Therefore, it is important that the wiring conductor formed on the subcarrier 101 accurately and rapidly transmits the electrical signal that has been subjected to optical-electrical conversion by the PD 102.

  In general, the transmission speed of an electric signal is represented by an electric signal propagation delay time (Tpd). Tpd can be transmitted at higher speed as its value is smaller, and is expressed by the following equation.

Tpd = (εr) ^1/2 / C0
Here, εr is the value of the relative permittivity or effective relative permittivity of the dielectric on which the wiring conductor is formed, and C0 is the speed of light (constant).

  From the above, it is desirable that the wiring conductor formed on the subcarrier 101 is formed on the insulating base 113 having a low relative dielectric constant. That is, it is desirable that the capacitance of the wiring conductor is low.

  Furthermore, in recent years, optical communication has been performed in which the transmission rate of optical signals exceeds 10 Gbit / second (bps) or 40 Gbit / second (bps).

However, as conventionally proposed, a wiring conductor is formed on one side surface and two upper surfaces of the insulating base 113, and the outer peripheral portion of one side surface on which the PD 102 of the insulating base 113 is mounted is the PD 102. In a structure surrounded by a ceramic member thicker than the thickness, a part of the wiring conductors 114b and 114c is embedded between the insulating base 113 and the ceramic member. (Hereinafter, the portion where the wiring conductors 114b and 114c are embedded is also referred to as an embedded portion)
Therefore, the relative dielectric constant of the dielectric (insulating base 113) exerted on the wiring conductors 114b and 114c is larger than the relative dielectric constant of air as compared with the structure in which the wiring conductors 114b and 114c are all exposed to the air. As a result, the capacitance of the wiring conductors 114b and 114c increases. As a result, there has been a problem that the propagation speed of the electric signal cannot be improved and the electric signal cannot be transmitted at high speed.

  In addition, since a part of the wiring conductors 114b and 114c is embedded, the impedance of the wiring conductors 114b and 114c changes in and around the embedded part of the wiring conductors 114b and 114c, and reflection noise is generated in the electric signal. There is also a problem that the electric signal cannot be accurately transmitted. Furthermore, this problem becomes more pronounced as the electrical signal becomes faster and higher in frequency.

  Furthermore, in the structure of the subcarrier 101 described above, the capacitances of the wiring conductors 114b and 114c are increased and cannot be reduced, so that, for example, the first wiring conductor 114b is transmitted during transmission of an electrical signal. The electrical signal is likely to interfere with the electrical signal, for example, the electrical signal also affects the second wiring conductor 114C. As a result, there has been a problem that electrical signals are not transmitted faithfully.

  In addition, wiring conductors 114b and 114c are formed on one side surface and two upper surfaces of the insulating base 113 as conventionally proposed, and the outer peripheral portion on one side surface on which the PD 102 of the insulating base 113 is mounted. In the structure surrounded by a ceramic member thicker than the thickness of PD102, the bonding wire connected to PD102 and PD102 are protected from being destroyed from external factors such as collision during assembly of the optical semiconductor device. Since the upper surfaces of the conductors 114b and 114c are not protected, there is a problem that peeling or disconnection occurs in the upper surface portions of the wiring conductors 114b and 114c due to external factors such as a collision.

  Therefore, the present invention has been completed in view of the above-mentioned various problems, and its purpose is to prevent the subcarrier on which the optical semiconductor element is mounted from external factors such as collision during assembly of the optical semiconductor device. Provided are an optical semiconductor device subcarrier and an optical semiconductor device capable of effectively preventing destruction, having high yield and productivity, and capable of accurately transmitting an optical-electrically converted high-frequency electrical signal. There is to do.

  The subcarrier of the optical semiconductor element of the present invention is a rectangular parallelepiped insulating base formed from one side surface to the upper surface and formed with a recess having a bifurcated portion bifurcated from the upper end portion of the one side surface to the upper surface. An optical semiconductor element mounting portion formed on the bottom surface of the concave portion on the one side surface, the first wiring conductor formed from the mounting portion to the bottom surface of one of the branch portions of the concave portion, Between a second wiring conductor formed from a portion near the mounting portion on the bottom surface of the one side surface of the recess to the bottom surface of the other branch portion of the recess, and the two branch portions of the insulating base And a grounding conductor layer formed in the region.

  In the subcarrier of the optical semiconductor element of the present invention, preferably, the ground conductor layer is further formed so as to surround the periphery of the recess of the insulating base and is formed on the lower surface of the insulating base. It is electrically connected to the lower conductor layer.

  The optical semiconductor device of the present invention is provided on the base body having a recess formed on the upper surface and having a through hole formed from the recess to the outer side surface, and conducting the inside and outside of the recess. A lead terminal, a cylindrical optical fiber fixing member fitted in the through hole, and a first wiring conductor placed on the bottom surface of the recess and electrically connected to the lead terminal The optical semiconductor element subcarrier of the present invention, the optical semiconductor element electrically connected to the first and second wiring conductors, and the recess around the recess on the upper surface of the base. And a lid joined so as to be closed.

  The subcarrier of the optical semiconductor element of the present invention is a rectangular parallelepiped insulating base formed with a concave portion formed from one side surface to the upper surface and having a branch portion branched into two from the upper end portion of the one side surface to the upper surface. A mounting portion of the optical semiconductor element formed on the bottom surface on one side surface of the recess, a first wiring conductor formed from the mounting portion to the bottom surface of one branch portion of the recess, and a bottom surface on the one side surface of the recess A second wiring conductor formed from a portion close to the mounting portion to the bottom surface of the other branch portion of the recess, and a ground conductor layer formed at a portion between the two branch portions of the insulating base. Therefore, the first and second wiring conductors formed in the recesses of the insulating base are all exposed to the air, and there are no parts embedded with dielectrics. Increase the capacitance of the conductor. Since it control by the optical semiconductor element light - electricity converted high-frequency electric signal can be well propagated.

  In addition, since the impedance does not change greatly in the portion where the first and second wiring conductors are embedded with a dielectric or the like, reflection noise is generated in the electrical signal when the electrical signal is transmitted at a high frequency. Can be effectively prevented, and an electric signal can be transmitted accurately.

  Further, since the ground conductor layer is formed at the portion between the two recessed portions of the insulating base, the electricity transmitted to the first and second wiring conductors formed on the bottom surface of the recessed portion. It is possible to effectively prevent the signal from interfering. As a result, it is possible to provide an optical semiconductor device that has excellent signal conversion accuracy and can effectively prevent malfunction.

  In addition, by forming a ground conductor layer between the first and second wiring conductors, the structure is similar to a coplanar line in which ground conductors are formed on both sides of a well-known wiring conductor, which is excellent in impedance control. Since the first and second wiring conductors can be made to be high-precision and stable high-frequency transmission lines, it is possible to more effectively prevent the occurrence of reflection noise, and at a higher speed, higher frequency electrical A signal can be transmitted.

  Since the mounting portion for the first and second wiring conductors and the optical semiconductor element is formed on the bottom surface of the recess of the insulating base, the optical semiconductor element mounted on the mounting portion and the element and the wiring conductor are electrically connected. In addition to the bonding wires connected to the optical semiconductor device, the first and second wiring conductors, which are important in terms of electrical or signal conversion characteristics, are also affected by external factors such as impact during assembly of the optical semiconductor device. Can be protected. As a result, it is possible to provide a subcarrier and an optical semiconductor device that have high yield and productivity and can be operated normally and stably over a long period of time.

  According to the subcarrier of the optical semiconductor element of the present invention, preferably, the ground conductor layer is connected to the lower conductor layer for mounting the subcarrier. That is, in order to obtain a wiring state excellent in impedance control, the ground conductor layer must be electrically grounded in the optical semiconductor device, and the connection must be made to the subcarrier, but the ground conductor layer is connected to the lower conductor layer. Thus, the ground conductor layer is automatically grounded only by mounting the subcarrier, and the connection process for grounding the ground conductor layer can be simplified.

  In addition, since a ground conductor layer is formed between the mounting portion and the first and second wiring conductors, electrical noise from inside and outside the optical semiconductor device can be blocked by the effect of the presence of the ground conductor. Therefore, it is possible to transmit an electric signal having a higher frequency at a higher speed.

  The optical semiconductor device according to the present invention includes a base having a recess formed on the upper surface and having a through hole formed from the recess to the outer surface, and a lead terminal provided on the base through the inside and outside of the recess. And a cylindrical optical fiber fixing member fitted in the through hole, and the light of the present invention placed on the bottom surface of the recess and electrically connected to the lead terminals of the first and second wiring conductors A subcarrier of the semiconductor element; an optical semiconductor element electrically connected to the first and second wiring conductors; and a lid body joined so as to close the recess around the recess on the upper surface of the substrate. Therefore, it is possible to transmit the electric signal converted from light to electricity more accurately at a high speed and at a high frequency, and at the time of assembling the optical semiconductor device, the subcarrier on which the optical semiconductor element is mounted. Destroyed by external factors such as collision Door can be effectively prevented. Therefore, it is possible to provide an optical semiconductor device that has high yield and productivity and can be operated normally and stably over a long period of time.

  The subcarrier and optical semiconductor device of the present invention will be described in detail below. In the example of the present embodiment, a PD will be described as an example of an optical semiconductor element mounted on a subcarrier. FIG. 1 is a cross-sectional view showing an example of an embodiment of the optical semiconductor device of the present invention, and FIG. 2 is a perspective view showing an example of an embodiment of a subcarrier of an optical semiconductor element mounted on the optical semiconductor device of the present invention. is there.

  In these drawings, 1 is a subcarrier, 2 is a PD as an optical semiconductor element, 3a is a first bonding wire for electrically connecting an electrode (not shown) of PD2 and a wiring conductor on the surface of the subcarrier 1. , 3b is a second bonding wire for electrically connecting the wiring conductor on the surface of the subcarrier 1 and the circuit wiring of the circuit board 20, 4 is an LD, 5 is a submount, 6 is a temperature sensor, 7 is A Peltier element, 8 is a base having a recess at the center of the upper surface, 9 is a lid, 10 is a fixing member, 11 is an optical fiber, and 12 is an external lead terminal.

  13 is a substantially rectangular parallelepiped insulating base constituting the subcarrier 1, 14a is a mounting portion as a conductor layer formed on the bottom surface of one side of the recess 15 formed in the insulating base 13, and 14b is a mounting portion. The first wiring conductor formed from 14a to the bottom surface of one branching portion of the recess 15 and 14c from the portion adjacent to the mounting portion 14a on the bottom surface on one side of the recess 15 to the bottom surface of the other branching portion of the recess 15 The formed second wiring conductor 14f is formed on the lower surface of the insulating base 13, and is bonded and fixed to the bottom surface of the recess of the base 8 (hereinafter also referred to as a mounting surface) via an Au-Sn brazing material or the like. The conductor layer 15 is a concave portion formed from one side surface to the upper surface of the insulating base 13 and having a bifurcated portion bifurcated from the upper end portion of the one side surface to the upper surface. Furthermore, 16 is formed so as to surround the periphery of the mounting portion 14a, the first wiring conductor 14b, and the second wiring conductor 14c formed on the portion between the two branched portions and the bottom surface of the recess 15. It is a grounding conductor layer.

  The mounting portion 14a and the first wiring conductor 14b may be formed so as to have a gap between them, and the two may be electrically connected with a bonding wire. Thereby, subcarriers can be freely made to correspond to the difference in the polarity and arrangement of the electrodes formed on the PD 102 due to the difference in the type of the PD 102.

  Further, the second wiring conductor 14c is electrically connected to an electrode or the like formed on the light receiving surface of the PD 2 through the first bonding wire 3a at a portion close to the mounting portion 14a. Since the portion close to the mounting portion 14a of the second wiring conductor 14c is formed on the same surface as the PD 2 to be mounted, it is easy to perform bonding in this way. If the second wiring conductor 14c and the mounting portion 14a are too close, a capacitive coupling occurs between the second wiring conductor 14c and the first wiring conductor 14b connected to the mounting portion 14a. It is not preferable. For this reason, the second wiring conductor 14c is usually placed close to the mounting portion 14a by 0.1 to 0.5 mm.

  When the second wiring conductor 14c adjacent to the mounting portion 14a is brought close to less than 0.1 mm, as shown above, the first wiring conductor 14b and the second wiring conductor 14c connected to the mounting portion 14a The capacitive coupling between the two becomes significant, and interference tends to occur in the electrical signal, which tends to make it difficult to faithfully transmit the electrical signal. Further, when wire bonding the PD 2 and the second wiring conductor 14c, a jig (capillary) for holding the bonding wire 3a tends to hit the PD 2 and easily destroy the PD 2. On the other hand, if the thickness exceeds 0.5 mm, the length of the bonding wire 3a becomes long, the inductance in the bonding wire 3a tends to increase, and it tends to react to external noise. Further, since the height of the wire loop increases as the bonding wire 3a becomes longer, the bonding wire 3a protrudes from the recess 15, and the assembly of the bonding wire 3a due to external factors such as a collision during the assembly of the optical semiconductor device. There is a tendency that it cannot be effectively prevented from being destroyed.

  Furthermore, the circuit board 20 is a circuit board that is electrically connected to the first wiring conductor 14a and the second wiring conductor 14c of the subcarrier 1 via the second bonding wire 3b. The circuit board 20 has circuit wiring such as a circuit for amplifying an electrical signal converted from light to electricity by the PD 2 and facilitating connection to an external lead terminal, and a line conductor for impedance matching on its upper surface. The first wiring conductor 14b and the second wiring conductor 14c are formed and are electrically connected to the circuit wiring of the circuit board 20 by the second bonding wire 3b made of Au, Al, or the like.

  The subcarrier 1 of the optical semiconductor element of the present invention is a rectangular parallelepiped insulating base formed with a concave portion 15 formed from one side surface to the upper surface and having a bifurcated portion bifurcated from the upper end portion to the upper surface of one side surface. A base 13, a mounting portion 14a formed on the bottom surface on one side of the recess 15, a first wiring conductor 14b formed from the mounting portion 14a to the bottom surface of one branch portion of the recess 15, The second wiring conductor 14c formed from the portion near the mounting portion 14a on the bottom surface on the side surface to the bottom surface of the other branch portion of the recess 15 and the portion between the two branch portions of the insulating base 13 are formed. And a grounding conductor layer 16.

  Since the ground conductor layer 16 is formed at a position between the two branch portions of the recess 15 having the branch portion branched into two of the insulating base, the first and second formed on the bottom surface of the recess 15 are formed. It is possible to effectively prevent interference of electrical signals transmitted to the second wiring conductors 14b and 14c. As a result, it is possible to provide an optical semiconductor device that has excellent signal conversion accuracy and can effectively prevent malfunction.

  For example, the electric signal of the second wiring conductor 14c is electromagnetically coupled to the first wiring conductor 14b and interferes with the electric signal of the first wiring conductor 14b, and as a result, is applied between the electrodes of the PD2. By suppressing the signal waveform between the first wiring conductor 14b and the second wiring conductor 14c from becoming a distorted signal waveform from a predetermined signal waveform, the operation of the PD 2 can be made necessary.

  Further, by forming the ground conductor layer 16 between the first and second wiring conductors 14b and 14c, it is similar to a coplanar line which is excellent in impedance control and is formed by forming ground conductors on both sides of a well-known wiring conductor. Since the structure is such that the first and second wiring conductors 14b and 14c can be made to be a high-accuracy and stable high-frequency transmission line, it is possible to more effectively prevent the occurrence of reflection noise, and further. A high-frequency electric signal can be transmitted at high speed.

  In the optical semiconductor device of the present invention, a recess is formed on the upper surface, and the base 8 having a through hole formed from the recess to the outer surface is electrically connected to the inside and outside of the recess. The lead terminal 12 provided on the base, the cylindrical optical fiber fixing member 10 fitted in the through-hole, and the first wiring conductor 14b are mounted on the bottom surface (mounting surface) of the recess of the base 8 And the subcarrier 1 in which the second wiring conductor 14c is electrically connected to the lead terminal 12, the PD2 electrically connected to the first wiring conductor 14b and the second wiring conductor 14c, and the upper surface of the base 8 And a lid 9 joined so as to close the recess around the recess.

  In this optical semiconductor device, the subcarrier 1 on which the PD 2 is mounted and the submount 5 on which the circuit board 20, the LD 4 and the temperature measuring element 6 are mounted on the mounting surface of the base 8 via the Peltier element 7. It is mounted and hermetically sealed by attaching a lid 9 to the upper surface of the substrate 8.

The insulating base 13 is made of an insulating material such as ceramics (sintered body), such as an aluminum oxide (Al ₂ O ₃ ) sintered body, an aluminum nitride (AlN) sintered body, or silicon carbide (SiC). It is made of a sintered material, a silicon nitride (Si ₃ N ₄ ) material, a glass ceramic sintered material, and the like.

If the insulating base 13 is made of, for example, an Al ₂ O ₃ sintered material, the main raw material Al ₂ O _3, silicon oxide (SiO ₂ ) and magnesia (MgO) as sintering aids, Made by adding ceramic powder such as calcia (CaO) and organic solvent, solvent to make a mud, forming a ceramic green sheet by the well-known doctor blade method, and firing it at a temperature of about 1600 ℃ Is done.

If the insulating base 13 is made of, for example, an AlN sintered body, the main raw material is AlN powder, yttria (Y ₂ O ₃ ) and calcia (CaO) as sintering aids, MgO, and an organic solvent. , It is manufactured by making a mud tribute by adding a solvent, forming a ceramic green sheet by the doctor blade method, and firing at about 1800 ° C. The thermal conductivity of the insulating base 13 manufactured in this way can be changed by the mixing ratio of the main raw material and the sintering aid.

  The recess 15 is formed on the insulating base 13 from one side surface to the upper surface by a molding method using a press die, mechanical grinding, a sand blast method, or the like. The depth of the recess 15 is preferably about 0.08 to 1 mm. If it is less than 0.08 mm, the first bonding wire 3a and PD2 are likely to protrude from the surface of the insulating base 13, and the bonding wire 3a and PD2 can be protected from external factors such as a collision during assembly of the optical semiconductor device. It becomes difficult. Furthermore, since the insulation interval between the ground conductor layer 16 formed on the surface of the insulating base 13 and the first wiring conductor 14b and the second wiring conductor 14c is narrowed, an electrical short circuit is likely to occur between them. . If the depth of the concave portion 15 exceeds 1 mm, the first wiring conductor 14b and the second wiring conductor 14c fall deeply into the concave portion 15 and the workability of bonding the PD2 to the mounting portion 14a or wire bonding is reduced. .

  The arithmetic average roughness Ra of the surface on which the recess 15 of the insulating base 13 and the ground conductor layer 16 around the recess 15 are formed is preferably 0.3 μm or less. If Ra exceeds 0.3 μm, the adhesion between the mounting layer 14a, the first wiring conductor 14b, the second wiring conductor 14c, the ground conductor layer 16, and the lower conductor layer 14f and the insulating base 13 is inferior, and vibrations occur. These conductor layers easily peel off from the insulating base 13 due to external factors such as shock and external stress, or internal stress caused by thermal shock or the like.

  Further, the mounting layer 14a, the first wiring conductor 14b, the second wiring conductor 14c, the ground conductor layer 16, and the lower conductor layer 14f are formed by sequentially laminating, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer. It consists of three layers.

The adhesion metal layer is formed on the surface of the insulating base 13 using a conventionally well-known vacuum thin film forming technique such as a sputtering method or an ion plating method. The adhesive metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel (Ni) -Cr alloy, tantalum nitride (from the point of adhesion to the insulating base 13). Ta ₂ N) or the like is preferable.

  The thickness of the adhesion metal layer is preferably about 0.01 to 0.2 μm. If the thickness is less than 0.01 μm, it is difficult to firmly adhere the insulating base 13 to the diffusion preventing layer and the main conductor layer. Due to the internal stress, the adhesion metal layer is easily peeled off from the insulating base.

  The diffusion prevention layer uses a well-known vacuum thin film forming technique such as sputtering or ion plating on the surface of the adhesion metal layer for the purpose of preventing mutual diffusion between the adhesion metal layer and the main conductor layer. It is preferably formed of platinum (Pt), palladium (Pd), rhodium (Rh), Ni, Ni—Cr alloy, Ti—tungsten (W) alloy, or the like. The thickness of the diffusion prevention layer is preferably about 0.05 to 1 μm. If the thickness is less than 0.05 μm, defects such as pinholes are generated, making it difficult to function as a diffusion prevention layer. This makes it easier for the diffusion prevention layer to peel from the adhesion metal layer. Further, when a Ni—Cr alloy is used for the diffusion preventing layer, the adhesion between the insulating base 13 and the main conductor layer can be secured, so that the adhesion metal layer can be omitted.

  Further, the main conductor layer is preferably made of Au, Cu, Ni, silver (Ag) or the like having a small electric resistance, and conventionally known thin film formation such as sputtering, ion plating, electrolytic plating, and electroless plating is used. The thickness is preferably about 0.1 to 10 μm. If the thickness is less than 0.1 μm, electrical resistance tends to increase, making it difficult to conduct. If the thickness exceeds 10 μm, the main conductor tends to peel from the diffusion preventing layer due to internal stress during film formation. Moreover, since Au is a noble metal and expensive, it is preferable to form it as thin as possible in order to reduce manufacturing costs. Further, when Cu foil is used for the main conductor layer, the adhesion to the insulating base 13 can be ensured, so that the above-mentioned adhesion metal layer can be omitted. When Cu that is easily oxidized is used for the main conductor layer, a protective layer made of Ni and Au is preferably deposited on the surface thereof to a thickness of 0.5 to 10 μm by a plating method or the like.

  The mounting portion 14a and the first wiring conductor 14b, the second wiring conductor 14c, the lower conductor layer 14f, and the ground conductor 17 made of the adhesion metal layer, the diffusion preventing layer, and the main conductor layer are subjected to a photo etching process using a photolithography technique. Alternatively, it is formed by a lift-off process. In particular, the mounting portion 14a, the first wiring conductor 14b, and the second wiring conductor 14c are formed on the concave portion 15 in order to improve insulation between the wiring conductors and accurately control the capacitance and impedance of the wiring conductor. It is necessary to form so as not to adhere to the upper part of the wiring conductor on the side wall (hereinafter also referred to as a side wall part). When the metal layer on the side wall portion of the recess 15 formed by the thin film forming technique is removed by chemical etching, the photoresist is removed so that it does not remain on the side wall portion of the recess 15 and chemical etching is performed. In order to prevent the metal layer from being formed on the side wall of the recess 15, a vacuum mask is formed on the side wall after a cover mask such as a protective metal plate is attached, or a photoresist or the like is formed on the recess 15. The metal layer may be prevented from being formed so as to remain on the side wall.

  In this manner, the wiring conductors constituting the mounting portion 14a, the first wiring conductor 14b, and the second wiring conductor 14c are formed along the bottom surface shape of the concave portion 15 continuous from one side surface to the top surface of the insulating base 13. Therefore, in the wiring conductor from one side surface to the upper surface, it can be formed with a continuous and uniform wiring conductor width with no positional deviation between the wiring conductors on the one side surface and the upper surface.

  Further, a low melting point brazing material for bonding and fixing the PD 2 to the surface of the mounting portion 14a may be applied to a predetermined thickness by sputtering or the like. This eliminates the trouble of arranging the brazing preform when the PD 2 is bonded and fixed to the mounting portion 14a. Examples of the low melting point brazing material include an Au-germanium (Ge) alloy (melting point 356 ° C.), an Au—silicon (Si) alloy (melting point 370 ° C.), an Au—Sn alloy (melting point 280 ° C.), a Pb—Sn alloy (melting point 183 ° C), indium (In) -Pb alloy (melting point 172 ° C), In (melting point 157 ° C), and the like are preferable. When the temperature exceeds 400 ° C., wiring breakdown inside the element of the PD 2 is likely to occur. However, since the above-mentioned brazing material has a melting point of 400 ° C. or less, the bonding temperature can be lowered. As a result, the PD2 can be prevented from being thermally destroyed, and the heating temperature raising time and the cooling time for melting the brazing material can be shortened in the bonding step, so that the manufacturing cost can be reduced.

  In addition, the second wiring conductor 14c is preferably formed without protruding from the bottom surface of the other branch portion of the recess 15. As a result, the space between the first wiring conductor 14b and the second wiring conductor 14c can be widely surrounded by the insulating base 13, so that the insulation can be improved and the capacitance of the wiring conductor can be reduced. Electrical signals can be transmitted at high speed. In addition, since the first and second wiring conductors 14c and 14b are formed on the bottom surface of the concave portion 15, it is easy to form them without protruding from the bottom surface of the concave portion 15, and at the same time, according to the shape of the bottom surface of the concave portion 15. Thus, the widths of the first and second wiring conductors 14c and 14b can be accurately formed, and the impedance and the like of these wiring conductors 14c and 14b can be accurately controlled.

The substrate 8 of the present invention is made of Al ₂ O ₃ sintered body, AlN sintered body, mullite sintered body, SiC sintered body, Si ₃ N ₄ sintered body, ceramics such as glass ceramics, or It consists of metals, such as a tungsten porous body impregnated with Cu, an iron (Fe) -Ni alloy, an Fe-Ni-cobalt (Co) alloy. Further, the base 8 is formed with a recess for accommodating components on the upper surface thereof, and the base plate 8 and the side wall of the base 8 are formed separately and then joined together. Good. In this case, the bottom plate portion and the side wall portion of the base body 8 may be formed of the same material, or may be formed of different materials. However, in the case of forming with different materials, it is preferable to make a combination in which the difference in thermal expansion coefficient between them is as small as possible.

  The circuit board 20 and the Peltier element 7 are bonded and fixed to the mounting surface of the base 8. The Peltier element 7 functions as a heat pump for cooling or heating the LD 4 to a predetermined temperature so that the LD 4 emits light stably, detects the temperature of the LD 4 measured by the temperature measuring element 6, and the LD 4 Cool or heat to a temperature of. A submount 5 is mounted on the upper surface of the Peltier element 7, and the LD 4 and the temperature measuring element 6 are adjacently installed on the submount 5.

  The external lead terminal 12 has a pin-like shape penetrating the bottom plate portion and the side wall portion of the base 8, and is formed of a metal such as an Fe—Ni alloy or an Fe—Ni—Co alloy. Or you may form from wiring conductors, such as a metallization layer derived | led-out from the inner peripheral surface of the recess of the base | substrate 8 to the outer peripheral surface.

  The external lead terminal 12 is electrically connected to components such as the circuit board 20 and the LD 4 on the mounting surface of the base 8.

  In the subcarrier 1 of the present invention, the ground conductor layer 16 is further formed so as to surround the periphery of the recess 15 of the insulating base 13, and the lower conductor layer 14 f formed on the lower surface of the insulating base 13. It should be electrically connected.

  Since the ground conductor layer 16 is connected to the lower conductor layer 14f, the ground conductor layer 16 is automatically grounded only by mounting the subcarrier 1, and the ground conductor layer 16 is grounded. The connection process can be simplified. Further, it is possible to effectively prevent the electrical signals transmitted to the first and second wiring conductors 14b and 14c from interfering with each other. As a result, the signal conversion accuracy is excellent, and malfunction can be effectively prevented.

  Since electric noise from the inside and outside of the optical semiconductor device can be blocked by the effect of the presence of the ground conductor layer 16, an electric signal having a high frequency can be transmitted at a higher speed.

  Further, the ground conductor layer 16 may be formed on the surfaces of all the side surfaces of the insulating base 13. As a result, electrical noise from the inside and outside of the optical semiconductor device can be further blocked, so that the accuracy of signal conversion can be improved.

  Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention.

It is sectional drawing which shows an example of embodiment about the optical semiconductor device of this invention. It is a perspective view which shows an example of embodiment about the subcarrier of this invention. It is sectional drawing which shows the example of the conventional optical semiconductor device. It is a perspective view which shows the example of the conventional subcarrier.

Explanation of symbols

1: Subcarrier 2: PD
4: LD
8: Substrate 9: Lid
13: Insulation base
14a: Mounted part
14b: First wiring conductor
14c: Second wiring conductor
15: Insulation base recess
16: Ground conductor layer

Claims (3)

A rectangular parallelepiped insulating base formed with a concave portion having a bifurcated portion formed from one side surface to the upper surface and branched in two from the upper end portion of the one side surface to the upper surface, and on the one side surface side of the concave portion The mounting portion of the optical semiconductor element formed on the bottom surface, the first wiring conductor formed from the mounting portion to the bottom surface of one of the branch portions of the concave portion, and the mounting of the bottom surface on the one side surface side of the concave portion A second wiring conductor formed from a part close to the part to a bottom surface of the other branch part of the recess, and a ground conductor layer formed at a part between the two branch parts of the insulating base. A subcarrier of an optical semiconductor element, comprising: The ground conductor layer is formed so as to surround the periphery of the recess of the insulating base, and is electrically connected to a lower conductor layer formed on the lower surface of the insulating base. The subcarrier of the optical semiconductor element according to claim 1. A base having a recess formed on the upper surface and having a through hole formed from the recess to the outer surface, a lead terminal provided in the base through the inside and outside of the recess, and the through hole The cylindrical optical fiber fixing member fitted and the first and second wiring conductors placed on the bottom surface of the recess and electrically connected to the lead terminal. 3. The subcarrier of the optical semiconductor element according to 2, the optical semiconductor element electrically connected to the first and second wiring conductors, and the recess around the recess on the upper surface of the base. An optical semiconductor device comprising: a lid joined to the optical semiconductor device.

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