JP2005203604A - Ｉｉｉ族窒化物系化合物半導体光素子 - Google Patents
Ｉｉｉ族窒化物系化合物半導体光素子 Download PDFInfo
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- JP2005203604A JP2005203604A JP2004009208A JP2004009208A JP2005203604A JP 2005203604 A JP2005203604 A JP 2005203604A JP 2004009208 A JP2004009208 A JP 2004009208A JP 2004009208 A JP2004009208 A JP 2004009208A JP 2005203604 A JP2005203604 A JP 2005203604A
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- compound semiconductor
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- group iii
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 8
- 150000001875 compounds Chemical class 0.000 title claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 24
- -1 nitride compound Chemical class 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 19
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 abstract description 8
- 239000010980 sapphire Substances 0.000 abstract description 8
- 238000005253 cladding Methods 0.000 abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 110
- 239000010408 film Substances 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004009208A JP2005203604A (ja) | 2004-01-16 | 2004-01-16 | Ｉｉｉ族窒化物系化合物半導体光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004009208A JP2005203604A (ja) | 2004-01-16 | 2004-01-16 | Ｉｉｉ族窒化物系化合物半導体光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005203604A true JP2005203604A (ja) | 2005-07-28 |
| JP2005203604A5 JP2005203604A5 (enExample) | 2008-03-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004009208A Withdrawn JP2005203604A (ja) | 2004-01-16 | 2004-01-16 | Ｉｉｉ族窒化物系化合物半導体光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005203604A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009515344A (ja) * | 2005-11-04 | 2009-04-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高い光抽出効率の発光ダイオード（ｌｅｄ） |
| WO2009117845A1 (en) * | 2008-03-25 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with double-sided passivation |
| WO2010020072A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with silicone protective layer |
| JP5471440B2 (ja) * | 2007-05-02 | 2014-04-16 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| US8890175B2 (en) | 2011-04-08 | 2014-11-18 | Panasonic Corporation | Nitride-based semiconductor element and method for fabricating the same |
| US9893239B2 (en) | 2015-12-08 | 2018-02-13 | Nichia Corporation | Method of manufacturing light emitting device |
-
2004
- 2004-01-16 JP JP2004009208A patent/JP2005203604A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009515344A (ja) * | 2005-11-04 | 2009-04-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高い光抽出効率の発光ダイオード（ｌｅｄ） |
| JP5471440B2 (ja) * | 2007-05-02 | 2014-04-16 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| WO2009117845A1 (en) * | 2008-03-25 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with double-sided passivation |
| CN102017193B (zh) * | 2008-03-25 | 2012-05-30 | 晶能光电（江西）有限公司 | 具有双面钝化的半导体发光器件 |
| WO2010020072A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with silicone protective layer |
| US8890175B2 (en) | 2011-04-08 | 2014-11-18 | Panasonic Corporation | Nitride-based semiconductor element and method for fabricating the same |
| US9893239B2 (en) | 2015-12-08 | 2018-02-13 | Nichia Corporation | Method of manufacturing light emitting device |
| US10050182B2 (en) | 2015-12-08 | 2018-08-14 | Nichia Corporation | Method of manufacturing light emitting device |
| US10431720B2 (en) | 2015-12-08 | 2019-10-01 | Nichia Corporation | Light emitting device |
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