JP2005196168A - 平板表示素子の製造方法及び装置 - Google Patents
平板表示素子の製造方法及び装置 Download PDFInfo
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- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
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- 230000001846 repelling effect Effects 0.000 claims 1
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- 230000007547 defect Effects 0.000 abstract description 5
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Abstract
【解決手段】 本発明の平板表示素子の製造方法及び装置は、エッチレジストとの反発力が大きい反発層が表面に形成されたソフトモールドを利用して平板表示素子の薄膜をパターニングする。
【選択図】図2
Description
特に、薄膜トランジスタ(Thin Film Transistor : 以下、”TFT”という)を利用して液晶セルを駆動するアクティブマトリックスタイプの液晶表示素子は画質が良好で消費電力が低いという長所があり、最近の生産技術の確立と研究開発の成果により、大型化及び高解像度化が急速に進んでいる。
図2を参照すると、本発明の実施例に係る平板表示素子の製造方法は、薄膜32が形成された硝子基板31上にエッチレジスト(エッチングレジスト、etch resist)溶液33aを塗布する工程、ソフトモールド34を利用したエッチレジスト層33のパターニング工程、薄膜32のパターニングのためのエッチング工程、残留エッチレジストパターンのストリップ工程、及び検査工程を含む。
図5を参照すると、フォトマスク36は、ソフトモールド34のエッチレジストに対向する面上に整列される。このソフトモールド34は、前述したように、ポリジメチルシロキサン(Polydimethylsiloxane, PDMS)、ポリウレタン(Polyurethane)、架橋ノボラック樹脂(Cross-linked Novolac resin)などからなり、エッチレジスト対向面上にホーム34aと突出面34bとが形成される。ソフトモールド34の突出面34bが薄膜32aと接触する際、ホーム34aには、エッチレジスト溶液33aの移動によりエッチレジスト溶液33aが満たされる。フォトマスク36には、ソフトモールド34の突出面34bだけを光に露出させる光透過部36が形成される。フォトマスク36が整列された状態で、ソフトモールド34の突出面34b上に紫外線(UV)が照射される。この時の紫外線(UV)は180nm〜300nm間の波長を持つ。それにより、ソフトモールド34の突出面34b上でCH3基が蒸発してその表面上がシリコンオキサイド層(SiOx)に変わる。このような露光工程でオゾンを供給すると、ソフトモールド34が極疎水性(ultra-hydrophobic)物質だとしても、突出面34bは一時的に(おおよそ2時間程度)親水性を呈するようになる。
[化学式1]
Cl3 SiR-X
12、16、31:硝子基板
13:カラーフィルター
14:共通電極
15:液晶層
18:ゲートライン
19:データライン
20:薄膜トランジスタ
21:画素電極
22:カラーフィルター基板
32a、32b:薄膜
33a、33b:エッチレジスト
34:ソフトモールド
35:反発層
36:フォトマスク
Claims (19)
- 薄膜上にエッチレジストを塗布する段階と、
前記エッチレジストとの対向面に薄膜パターン形成のための突出部及びホームを有する、ソフトモールドを形成する段階と、
前記ソフトモールドを前記エッチレジストに加圧して、エッチレジストパターンを前記薄膜上に形成する段階と、
前記エッチレジストパターンから前記ソフトモールドを分離する段階と、
前記エッチレジストパターンを利用して、前記薄膜をエッチングして薄膜パターンを形成する段階とを含むことを特徴とする平板表示素子の製造方法。 - 前記ソフトモールドを形成する段階は、前記エッチレジストとの対向面上にホームと突出面とを形成する段階と、前記突出面を露光する段階と、前記露光された領域である突出面にオゾンを供給する段階と、前記オゾンが供給された前記突出面を自己組織化物質に露出させる段階とを含むことを特徴とする請求項1記載の方法。
- 前記自己組織化物質の末端基に従って、前記突出面の表面が親水性及び疎水性のうちいずれか一つの性質を呈するようになることを特徴とする請求項2記載の方法。
- 前記突出面の表面が親水性である場合に、前記末端基は、 -OH、-COOH、-COHのうちの少なくとも一つであることを特徴とする請求項3記載の方法。
- 前記突出面の表面が疎水性である場合に、前記末端基は、-Cl、-F、-I、-CH3のうちの少なくとも一つであることを特徴とする請求項3記載の方法。
- 前記平板表示素子は、液晶表示素子(LCD)、電界放出表示素子(FED)、プラズマディスプレイパネル(PDP)及び電界発光素子(EL)のうちのいずれか一つであることを特徴とする請求項1記載の方法。
- 前記ソフトモールドを前記エッチレジストに加圧する際に前記エッチレジストをベーキングする段階を含むことを特徴とする請求項1記載の方法。
- 前記薄膜パターンを形成した後、前記エッチレジストパターンをストリップする段階を含むことを特徴とする請求項1記載の方法。
- 前記ソフトモールドを形成する段階は、前記ソフトモールドの表面処理を通じて前記ソフトモールドの表面上に前記エッチレジストとの反発力が大きい反発層を形成する段階を含むことを特徴とする請求項1記載の方法。
- 前記ソフトモールドは、 ポリジメチルシロキサン(Polydimethylsiloxane, PDMS)、ポリウレタン(Polyurethane)、架橋ノボラック樹脂(Cross-linked Novolac resin)のうちの少なくとも一つを含むことを特徴とする請求項1記載の方法。
- 薄膜上にエッチレジストを塗布する装置と、
前記エッチレジストとの対向面に薄膜パターン形成のための突出部及びホームを有し、前記突出部の表面が表面処理された、ソフトモールドと、
前記ソフトモールドを前記エッチレジストに加圧して、エッチレジストパターンを形成し、前記エッチレジストパターンから前記ソフトモールドを分離し、前記エッチレジストパターンを利用して前記薄膜をエッチングして薄膜パターンを形成する装置とを具備することを特徴とする平板表示素子の製造装置。 - 前記ソフトモールドの表面は、前記エッチレジストとの反発力が大きい反発層を具備することを特徴とする請求項11記載の装置。
- 前記ソフトモールドの反発層の厚さはおおよそ数十Å程度であることを特徴とする請求項12記載の装置。
- 前記ソフトモールドの反発層は疎水性であり、前記エッチレジストは親水性であることを特徴とする請求項12記載の装置。
- 前記ソフトモールドの反発層は、-C1、-F、-I、-CH3のうちの少なくとも一つを含むことを特徴とする請求項14記載の装置。
- 前記ソフトモールドの反発層は親水性であり、前記エッチレジストは疎水性であることを特徴とする請求項12記載の装置。
- 前記ソフトモールドの反発層は、-OH、-COOH、-COH(カルボキシル基)のうちの少なくとも一つを含むことを特徴とする請求項14記載の装置。
- 前記エッチレジストの移動により、前記ソフトモールドのホームに前記エッチレジストが満たされることを特徴とする請求項11記載の装置。
- 前記平板表示素子は、液晶表示素子(LCD)、電界放出表示素子(FED)、プラズマディスプレイパネル(PDP)及び電界発光素子(EL)のうちのいずれか一つであることを特徴とする請求項11記載の装置。
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JP2016524330A (ja) * | 2013-06-19 | 2016-08-12 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | インプリントリソグラフィーのためのインプリント材料 |
US9981419B2 (en) | 2013-06-19 | 2018-05-29 | Ev Group E. Thallner Gmbh | Embossing compound for embossing lithography |
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US10589457B2 (en) | 2013-06-19 | 2020-03-17 | Ev Group E. Thallner Gmbh | Embossing compound for embossing lithography |
KR102233597B1 (ko) | 2013-06-19 | 2021-03-30 | 에베 그룹 에. 탈너 게엠베하 | 엠보싱 리소그래피용 엠보싱 화합물 |
JP2015076504A (ja) * | 2013-10-09 | 2015-04-20 | 大日本印刷株式会社 | モールド管理システム |
JP2018125565A (ja) * | 2018-05-07 | 2018-08-09 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | インプリントリソグラフィーのためのインプリント材料 |
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JP4081077B2 (ja) | 2008-04-23 |
KR101117437B1 (ko) | 2012-02-29 |
US7273564B2 (en) | 2007-09-25 |
FR2864698B1 (fr) | 2007-05-11 |
US20050139576A1 (en) | 2005-06-30 |
GB2409574B (en) | 2006-05-10 |
GB0425499D0 (en) | 2004-12-22 |
GB2409574A (en) | 2005-06-29 |
FR2864698A1 (fr) | 2005-07-01 |
US20080017312A1 (en) | 2008-01-24 |
CN100361026C (zh) | 2008-01-09 |
KR20050067244A (ko) | 2005-07-01 |
CN1637614A (zh) | 2005-07-13 |
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