FR2864698B1 - Procede et dispositif de fabrication d'un affichage a ecran plat - Google Patents
Procede et dispositif de fabrication d'un affichage a ecran platInfo
- Publication number
- FR2864698B1 FR2864698B1 FR0412844A FR0412844A FR2864698B1 FR 2864698 B1 FR2864698 B1 FR 2864698B1 FR 0412844 A FR0412844 A FR 0412844A FR 0412844 A FR0412844 A FR 0412844A FR 2864698 B1 FR2864698 B1 FR 2864698B1
- Authority
- FR
- France
- Prior art keywords
- screen display
- flat screen
- manufacturing flat
- manufacturing
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030098122A KR101117437B1 (ko) | 2003-12-27 | 2003-12-27 | 평판표시소자의 제조방법 및 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2864698A1 FR2864698A1 (fr) | 2005-07-01 |
FR2864698B1 true FR2864698B1 (fr) | 2007-05-11 |
Family
ID=33550341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0412844A Expired - Fee Related FR2864698B1 (fr) | 2003-12-27 | 2004-12-03 | Procede et dispositif de fabrication d'un affichage a ecran plat |
Country Status (6)
Country | Link |
---|---|
US (2) | US7273564B2 (fr) |
JP (1) | JP4081077B2 (fr) |
KR (1) | KR101117437B1 (fr) |
CN (1) | CN100361026C (fr) |
FR (1) | FR2864698B1 (fr) |
GB (1) | GB2409574B (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101010431B1 (ko) * | 2003-12-27 | 2011-01-21 | 엘지디스플레이 주식회사 | 평판표시소자의 제조방법 및 장치 |
KR101117987B1 (ko) * | 2005-06-07 | 2012-03-06 | 엘지디스플레이 주식회사 | 평판표시소자의 제조장치 및 방법 |
KR20070074787A (ko) * | 2005-06-13 | 2007-07-18 | 삼성전자주식회사 | 계조 전압 발생 장치 및 액정 표시 장치 |
KR101137862B1 (ko) | 2005-06-17 | 2012-04-20 | 엘지디스플레이 주식회사 | 평판표시소자의 제조방법 |
KR101171190B1 (ko) | 2005-11-02 | 2012-08-06 | 삼성전자주식회사 | 표시장치의 제조방법과 이에 사용되는 몰드 |
KR101252083B1 (ko) | 2005-12-22 | 2013-04-12 | 엘지디스플레이 주식회사 | 유기 전계발광 표시장치 및 그 제조방법 |
KR20070067995A (ko) * | 2005-12-26 | 2007-06-29 | 엘지.필립스 엘시디 주식회사 | 평판표시소자의 제조장치 및 그 제조방법 |
KR101194646B1 (ko) | 2005-12-30 | 2012-10-24 | 엘지디스플레이 주식회사 | 소프트몰드 제조방법 |
KR100705641B1 (ko) * | 2006-04-10 | 2007-04-17 | 이화여자대학교 산학협력단 | 몰드 처리방법 |
KR101261606B1 (ko) * | 2006-05-09 | 2013-05-09 | 삼성디스플레이 주식회사 | 표시판의 제조 장치 및 제조 방법 |
KR100848559B1 (ko) * | 2006-06-29 | 2008-07-25 | 엘지디스플레이 주식회사 | 소프트몰드 제조방법 및 그것을 이용한 패턴 형성 방법 |
KR100832298B1 (ko) * | 2006-06-29 | 2008-05-26 | 엘지디스플레이 주식회사 | 패턴 형성용 레지스트와 이를 이용한 소프트몰드 제조방법 |
EP1906236B1 (fr) | 2006-08-01 | 2012-09-19 | Samsung Electronics Co., Ltd. | Appareil d'impression et procédé pour la formation d'un film résiduel sur un substrat |
KR101341782B1 (ko) * | 2006-12-29 | 2013-12-13 | 엘지디스플레이 주식회사 | 몰드 구조물, 이를 이용한 패턴의 형성 방법과 액정 표시장치의 제조 방법 |
KR101319325B1 (ko) * | 2006-12-29 | 2013-10-16 | 엘지디스플레이 주식회사 | 패턴의 형성 방법 |
CA2791241C (fr) | 2009-04-22 | 2018-06-19 | Lxdata Inc. | Agencement de capteurs de pression utilisant une fibre optique et methodologies pour realiser une analyse d'une formation souterraine |
CN103203959B (zh) * | 2012-01-16 | 2016-08-10 | 昆山允升吉光电科技有限公司 | 一种混合制备工艺及该种工艺制得的台阶模板 |
KR102087472B1 (ko) * | 2013-06-19 | 2020-03-11 | 에베 그룹 에. 탈너 게엠베하 | 엠보싱 리소그래피용 엠보싱 화합물 |
JP6398169B2 (ja) * | 2013-10-09 | 2018-10-03 | 大日本印刷株式会社 | モールド管理システム |
KR102267680B1 (ko) * | 2013-11-29 | 2021-06-22 | 에베 그룹 에. 탈너 게엠베하 | 다이 구조물을 가지는 다이, 뿐만 아니라 이의 제조 방법 |
CN104882467B (zh) | 2015-06-04 | 2017-12-15 | 京东方科技集团股份有限公司 | 基板及其制造方法、显示装置 |
JP6608997B2 (ja) * | 2018-05-07 | 2019-11-20 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | インプリントリソグラフィーのためのインプリント材料 |
KR102178401B1 (ko) * | 2019-07-24 | 2020-11-13 | 한밭대학교 산학협력단 | 유기발광다이오드용 박막 패턴형성 방법 및 이로부터 제조된 유기물 박막 |
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JPS57135066A (en) * | 1981-02-14 | 1982-08-20 | Tatsumo Kk | Rotary applying machine |
US4680084A (en) * | 1984-08-21 | 1987-07-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Interferometric methods and apparatus for device fabrication |
JPH0580530A (ja) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US6020047A (en) * | 1996-09-04 | 2000-02-01 | Kimberly-Clark Worldwide, Inc. | Polymer films having a printed self-assembling monolayer |
CN1179621A (zh) * | 1996-10-14 | 1998-04-22 | 大宇电子株式会社 | 构图方法 |
JPH10221522A (ja) | 1997-02-07 | 1998-08-21 | Dainippon Printing Co Ltd | ブラックマトリックスの形成方法 |
US20010051585A1 (en) * | 1998-09-01 | 2001-12-13 | Lg Electronics Inc. | Composition for barrier ribs of plasma display panel and method of fabricating such barrier ribs using the composition |
JP2000315890A (ja) * | 1999-04-30 | 2000-11-14 | Hitachi Chem Co Ltd | 電磁波シールドフィルムの製造方法、電磁波シールドフィルム並びにこの電磁波シールドフィルムを用いた電磁波遮蔽体及びディスプレイ |
US6190929B1 (en) * | 1999-07-23 | 2001-02-20 | Micron Technology, Inc. | Methods of forming semiconductor devices and methods of forming field emission displays |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
JP2001223185A (ja) * | 1999-11-11 | 2001-08-17 | Ishikawa Seisakusho Ltd | 半導体デバイス等の製造における回路パターン転写方法 |
JP4511786B2 (ja) * | 2000-07-16 | 2010-07-28 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 基板とこの基板から離れたテンプレートを整列させる方法 |
JP2002158192A (ja) * | 2000-08-30 | 2002-05-31 | Ishikawa Seisakusho Ltd | 半導体デバイス製造におけるパターン転写法 |
JP2003100625A (ja) * | 2000-08-30 | 2003-04-04 | Ishikawa Seisakusho Ltd | 半導体デバイス製造におけるパターン転写方法 |
JP2002270541A (ja) * | 2001-03-08 | 2002-09-20 | Matsushita Electric Ind Co Ltd | モールド、モールドの製造方法及びパターン形成方法 |
US6673287B2 (en) * | 2001-05-16 | 2004-01-06 | International Business Machines Corporation | Vapor phase surface modification of composite substrates to form a molecularly thin release layer |
US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
US6957608B1 (en) * | 2002-08-02 | 2005-10-25 | Kovio, Inc. | Contact print methods |
US7150844B2 (en) * | 2003-10-16 | 2006-12-19 | Seagate Technology Llc | Dry passivation process for stamper/imprinter family making for patterned recording media |
KR101010476B1 (ko) * | 2003-12-27 | 2011-01-21 | 엘지디스플레이 주식회사 | 평판표시소자의 제조방법 및 장치 |
KR101010431B1 (ko) * | 2003-12-27 | 2011-01-21 | 엘지디스플레이 주식회사 | 평판표시소자의 제조방법 및 장치 |
-
2003
- 2003-12-27 KR KR1020030098122A patent/KR101117437B1/ko active IP Right Grant
-
2004
- 2004-10-14 US US10/963,550 patent/US7273564B2/en active Active
- 2004-11-18 GB GB0425499A patent/GB2409574B/en not_active Expired - Fee Related
- 2004-12-02 CN CNB2004100955894A patent/CN100361026C/zh not_active Expired - Fee Related
- 2004-12-03 FR FR0412844A patent/FR2864698B1/fr not_active Expired - Fee Related
- 2004-12-21 JP JP2004369233A patent/JP4081077B2/ja active Active
-
2007
- 2007-09-24 US US11/902,611 patent/US20080017312A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
GB2409574A (en) | 2005-06-29 |
GB0425499D0 (en) | 2004-12-22 |
JP4081077B2 (ja) | 2008-04-23 |
US20050139576A1 (en) | 2005-06-30 |
KR20050067244A (ko) | 2005-07-01 |
GB2409574B (en) | 2006-05-10 |
US20080017312A1 (en) | 2008-01-24 |
KR101117437B1 (ko) | 2012-02-29 |
CN1637614A (zh) | 2005-07-13 |
US7273564B2 (en) | 2007-09-25 |
CN100361026C (zh) | 2008-01-09 |
FR2864698A1 (fr) | 2005-07-01 |
JP2005196168A (ja) | 2005-07-21 |
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