JP2005184028A - 不揮発性記憶素子 - Google Patents
不揮発性記憶素子 Download PDFInfo
- Publication number
- JP2005184028A JP2005184028A JP2005041611A JP2005041611A JP2005184028A JP 2005184028 A JP2005184028 A JP 2005184028A JP 2005041611 A JP2005041611 A JP 2005041611A JP 2005041611 A JP2005041611 A JP 2005041611A JP 2005184028 A JP2005184028 A JP 2005184028A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- region
- semiconductor
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003860 storage Methods 0.000 title abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 239000011856 silicon-based particle Substances 0.000 claims abstract 7
- 230000015654 memory Effects 0.000 claims description 241
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 105
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 105
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 51
- 230000014759 maintenance of location Effects 0.000 claims description 19
- 238000009825 accumulation Methods 0.000 claims description 7
- 238000002513 implantation Methods 0.000 abstract description 4
- 230000000717 retained effect Effects 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 562
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 69
- 229920005591 polysilicon Polymers 0.000 description 69
- 238000003949 trap density measurement Methods 0.000 description 33
- 238000002347 injection Methods 0.000 description 25
- 239000007924 injection Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 15
- 239000002784 hot electron Substances 0.000 description 13
- 230000001133 acceleration Effects 0.000 description 12
- -1 phosphorus ions Chemical class 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000005641 tunneling Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000005527 interface trap Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000005524 hole trap Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005041611A JP2005184028A (ja) | 2005-02-18 | 2005-02-18 | 不揮発性記憶素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005041611A JP2005184028A (ja) | 2005-02-18 | 2005-02-18 | 不揮発性記憶素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001257698A Division JP2003068893A (ja) | 2001-08-28 | 2001-08-28 | 不揮発性記憶素子及び半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005184028A true JP2005184028A (ja) | 2005-07-07 |
| JP2005184028A5 JP2005184028A5 (fr) | 2008-02-14 |
Family
ID=34792799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005041611A Pending JP2005184028A (ja) | 2005-02-18 | 2005-02-18 | 不揮発性記憶素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005184028A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078376A (ja) * | 2006-09-21 | 2008-04-03 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JP2012216876A (ja) * | 2006-11-20 | 2012-11-08 | Macronix International Co Ltd | トンネル障壁の上に電界分布層を有する電荷捕獲装置 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US10403642B2 (en) | 2017-11-08 | 2019-09-03 | Toshiba Memory Corporation | Semiconductor device |
-
2005
- 2005-02-18 JP JP2005041611A patent/JP2005184028A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078376A (ja) * | 2006-09-21 | 2008-04-03 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JP2012216876A (ja) * | 2006-11-20 | 2012-11-08 | Macronix International Co Ltd | トンネル障壁の上に電界分布層を有する電荷捕獲装置 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US9030877B2 (en) | 2007-08-30 | 2015-05-12 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US10403642B2 (en) | 2017-11-08 | 2019-09-03 | Toshiba Memory Corporation | Semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071227 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090120 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090526 |