JP2005184028A - 不揮発性記憶素子 - Google Patents

不揮発性記憶素子 Download PDF

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Publication number
JP2005184028A
JP2005184028A JP2005041611A JP2005041611A JP2005184028A JP 2005184028 A JP2005184028 A JP 2005184028A JP 2005041611 A JP2005041611 A JP 2005041611A JP 2005041611 A JP2005041611 A JP 2005041611A JP 2005184028 A JP2005184028 A JP 2005184028A
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JP
Japan
Prior art keywords
film
insulating film
region
semiconductor
memory cell
Prior art date
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Pending
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JP2005041611A
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English (en)
Japanese (ja)
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JP2005184028A5 (de
Inventor
Shoji Yadori
章二 宿利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2005041611A priority Critical patent/JP2005184028A/ja
Publication of JP2005184028A publication Critical patent/JP2005184028A/ja
Publication of JP2005184028A5 publication Critical patent/JP2005184028A5/ja
Pending legal-status Critical Current

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  • Non-Volatile Memory (AREA)
JP2005041611A 2005-02-18 2005-02-18 不揮発性記憶素子 Pending JP2005184028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005041611A JP2005184028A (ja) 2005-02-18 2005-02-18 不揮発性記憶素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005041611A JP2005184028A (ja) 2005-02-18 2005-02-18 不揮発性記憶素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001257698A Division JP2003068893A (ja) 2001-08-28 2001-08-28 不揮発性記憶素子及び半導体集積回路

Publications (2)

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JP2005184028A true JP2005184028A (ja) 2005-07-07
JP2005184028A5 JP2005184028A5 (de) 2008-02-14

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ID=34792799

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JP2005041611A Pending JP2005184028A (ja) 2005-02-18 2005-02-18 不揮発性記憶素子

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JP (1) JP2005184028A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078376A (ja) * 2006-09-21 2008-04-03 Oki Electric Ind Co Ltd 半導体記憶装置
JP2012216876A (ja) * 2006-11-20 2012-11-08 Macronix International Co Ltd トンネル障壁の上に電界分布層を有する電荷捕獲装置
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US10403642B2 (en) 2017-11-08 2019-09-03 Toshiba Memory Corporation Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078376A (ja) * 2006-09-21 2008-04-03 Oki Electric Ind Co Ltd 半導体記憶装置
JP2012216876A (ja) * 2006-11-20 2012-11-08 Macronix International Co Ltd トンネル障壁の上に電界分布層を有する電荷捕獲装置
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US10403642B2 (en) 2017-11-08 2019-09-03 Toshiba Memory Corporation Semiconductor device

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