JP2005167212A5 - - Google Patents
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- Publication number
- JP2005167212A5 JP2005167212A5 JP2004313315A JP2004313315A JP2005167212A5 JP 2005167212 A5 JP2005167212 A5 JP 2005167212A5 JP 2004313315 A JP2004313315 A JP 2004313315A JP 2004313315 A JP2004313315 A JP 2004313315A JP 2005167212 A5 JP2005167212 A5 JP 2005167212A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing
- semiconductor layer
- semiconductor device
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 43
- 239000004065 semiconductor Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 14
- 239000012535 impurity Substances 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 6
- 229910021332 silicide Inorganic materials 0.000 claims 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000011241 protective layer Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000007865 diluting Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004313315A JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003368141 | 2003-10-28 | ||
| JP2003368141 | 2003-10-28 | ||
| JP2004313315A JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005167212A JP2005167212A (ja) | 2005-06-23 |
| JP2005167212A5 true JP2005167212A5 (https=) | 2007-10-18 |
| JP4877866B2 JP4877866B2 (ja) | 2012-02-15 |
Family
ID=34741098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004313315A Expired - Fee Related JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4877866B2 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4010335B2 (ja) | 2005-06-30 | 2007-11-21 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
| US7528017B2 (en) * | 2005-12-07 | 2009-05-05 | Kovio, Inc. | Method of manufacturing complementary diodes |
| JP4882700B2 (ja) * | 2006-11-22 | 2012-02-22 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
| JP5234717B2 (ja) * | 2007-03-20 | 2013-07-10 | ローム株式会社 | 半導体集積回路装置 |
| EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR20250030527A (ko) | 2009-09-04 | 2025-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
| WO2011046025A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| JP6079548B2 (ja) | 2013-10-11 | 2017-02-15 | セイコーエプソン株式会社 | 静電気保護回路、電気光学装置、及び電子機器 |
| US12317703B2 (en) | 2020-03-19 | 2025-05-27 | Boe Technology Group Co., Ltd. | Display substrate having connection electrode in a same layer with one capacitor electrode and electrically connecting the other capacitor electrode to data writing sub-circuit, and display device |
| WO2021184307A1 (zh) * | 2020-03-19 | 2021-09-23 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
| JPH08201853A (ja) * | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
| US5989945A (en) * | 1996-05-15 | 1999-11-23 | Seiko Epson Corporation | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
| JPH11340129A (ja) * | 1998-05-28 | 1999-12-10 | Seiko Epson Corp | パターン製造方法およびパターン製造装置 |
| JP3980312B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社日立製作所 | 液晶表示装置およびその製造方法 |
-
2004
- 2004-10-28 JP JP2004313315A patent/JP4877866B2/ja not_active Expired - Fee Related
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