JP2005159310A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2005159310A
JP2005159310A JP2004294739A JP2004294739A JP2005159310A JP 2005159310 A JP2005159310 A JP 2005159310A JP 2004294739 A JP2004294739 A JP 2004294739A JP 2004294739 A JP2004294739 A JP 2004294739A JP 2005159310 A JP2005159310 A JP 2005159310A
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JP
Japan
Prior art keywords
layer
semiconductor device
electrode
nitride semiconductor
group iii
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Pending
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JP2004294739A
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English (en)
Japanese (ja)
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JP2005159310A5 (https=
Inventor
Yutaka Hirose
裕 廣瀬
Takeshi Tanaka
毅 田中
Yasuhiro Uemoto
康裕 上本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004294739A priority Critical patent/JP2005159310A/ja
Publication of JP2005159310A publication Critical patent/JP2005159310A/ja
Publication of JP2005159310A5 publication Critical patent/JP2005159310A5/ja
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2004294739A 2003-10-30 2004-10-07 半導体装置及びその製造方法 Pending JP2005159310A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004294739A JP2005159310A (ja) 2003-10-30 2004-10-07 半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003370407 2003-10-30
JP2004294739A JP2005159310A (ja) 2003-10-30 2004-10-07 半導体装置及びその製造方法

Publications (2)

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JP2005159310A true JP2005159310A (ja) 2005-06-16
JP2005159310A5 JP2005159310A5 (https=) 2007-11-22

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JP2004294739A Pending JP2005159310A (ja) 2003-10-30 2004-10-07 半導体装置及びその製造方法

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JP (1) JP2005159310A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310864A (ja) * 2005-04-28 2006-11-09 Sharp Corp 半導体発光デバイスおよび半導体デバイスの製造方法
JP2008263115A (ja) * 2007-04-13 2008-10-30 Kyocera Corp 発光素子及びその製造方法
JP2013034010A (ja) * 2006-02-16 2013-02-14 Lg Electronics Inc 縦型発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101038A (ja) * 2001-09-19 2003-04-04 Toshiba Corp 機能素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101038A (ja) * 2001-09-19 2003-04-04 Toshiba Corp 機能素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310864A (ja) * 2005-04-28 2006-11-09 Sharp Corp 半導体発光デバイスおよび半導体デバイスの製造方法
JP2013034010A (ja) * 2006-02-16 2013-02-14 Lg Electronics Inc 縦型発光素子
JP2008263115A (ja) * 2007-04-13 2008-10-30 Kyocera Corp 発光素子及びその製造方法

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