JP2005113182A - アルミニウムの表面処理方法 - Google Patents
アルミニウムの表面処理方法 Download PDFInfo
- Publication number
- JP2005113182A JP2005113182A JP2003346773A JP2003346773A JP2005113182A JP 2005113182 A JP2005113182 A JP 2005113182A JP 2003346773 A JP2003346773 A JP 2003346773A JP 2003346773 A JP2003346773 A JP 2003346773A JP 2005113182 A JP2005113182 A JP 2005113182A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- ozone
- oxide film
- gas
- containing gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 79
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004381 surface treatment Methods 0.000 title claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 93
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 11
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 100
- 239000011737 fluorine Substances 0.000 description 24
- 229910052731 fluorine Inorganic materials 0.000 description 24
- 238000012360 testing method Methods 0.000 description 23
- 238000005260 corrosion Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 4
- 238000007743 anodising Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
【解決手段】 アルミニウム又はアルミニウム合金の表面にオゾンガスによって酸化皮膜を形成する方法であって、常温〜450℃に保持されているアルミニウム又はアルミニウム合金の表面に、オゾン濃度が5〜100vol.%のオゾン含有ガスを接触させて酸化皮膜を形成する事を特徴とするものであり、CVD装置の場合には、該装置内を減圧して加熱した状態でオゾン含有ガスを供給する事によって装置内のアルミニウム又はアルミニウム合金の表面に酸化皮膜を形成する。オゾンガス濃度は20%以上が好ましい。
【選択図】 図2
Description
等のフッ素系クリーニングガスを供給して、或いはF2 プラズマを用いてクリーニングを行っている。このクリーニング工程において、前記CVD装置内面等に付着堆積した固体の副生物は、SiF4 やHFとなってガス化して系外に排出され、これによって装置のクリーニングが完了する事になる。
先ず、本発明で使用されるアルミニウムは、一般的な構造部材或いは配管部材としてのアルミニウムであり、このアルミニウムを、常温〜450℃に保持した状態で、高濃度のオゾン含有ガスに接触させることによって、該アルミニウムの表面にオゾンガスによる酸化皮膜の形成(以下単に『オゾン処理』という場合がある)を行う。
ここで、オゾン処理温度が60℃以下であると、酸化反応が遅くなって短時間では酸化皮膜の生成が認められず、生成する酸化皮膜も薄くなって実用に耐え難い。従って、予め60℃超にアルミニウムを加熱保持しておくのが望ましい。また、450℃を越えるとアルミニウムの強度が低下してくるため、特に、予めアルミニウムを用いて成形した構造物の表面をオゾン処理して酸化皮膜を形成する様な場合には、成形体に歪みや変形が生じるおそれが出てくるので、450℃以下に抑えておく必要がある。更に好ましい範囲は、100〜450℃であり、最も好ましい範囲は200〜400℃である。又、この温度は、オゾン処理されるべきアルミニウムを予め所定の温度に加熱しておく事が肝要であり、オゾン含有ガスを加熱して供給する方法は、オゾンの分解を促進するため好ましい方法ではない。
(比較例1)
(比較例2)
(比較例3)
その結果、本発明に係るオゾン処理によってアルミの耐腐食性について大幅な改善が認められる。
Claims (5)
- アルミニウム又はアルミニウム合金にオゾンガスを作用させて該アルミニウム又はアルミニウム合金の表面に酸化皮膜を形成するアルミニウムの表面処理方法であって、
常温〜450℃に保持されているアルミニウム又はアルミニウム合金の表面に、オゾン濃度が5〜100vol.%のオゾン含有ガスを接触させる事により、前記アルミニウム又はアルミニウム合金の表面に酸化皮膜を形成する事を特徴とするアルミニウムの表面処理方法。 - 前記アルミニウム又はアルミニウム合金の表面に、前記オゾン含有ガスを、流通させつつ接触させるものである請求項1記載のアルミニウムの表面処理方法。
- 前記オゾン含有ガスを接触させるアルミニウム又はアルミニウム合金の保持温度が、60℃超〜450℃である請求項1又は2記載のアルミニウムの表面処理方法。
- 前記オゾン含有ガスを、5Torr以上大気圧未満の減圧下で接触させて、前記アルミニウム又はアルミニウム合金の表面に酸化皮膜を形成させる請求項1〜3のいずれか1項に記載のアルミニウムの表面処理方法。
- 前記オゾン含有ガスは、オゾン濃度が20vol.%以上で残部が酸素ガスである請求項1〜4のいずれか1項に記載のアルミニウムの表面処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003346773A JP4366169B2 (ja) | 2003-10-06 | 2003-10-06 | アルミニウムの表面処理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003346773A JP4366169B2 (ja) | 2003-10-06 | 2003-10-06 | アルミニウムの表面処理方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007252799A Division JP2008007861A (ja) | 2007-09-28 | 2007-09-28 | アルミニウムの表面処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005113182A true JP2005113182A (ja) | 2005-04-28 |
JP4366169B2 JP4366169B2 (ja) | 2009-11-18 |
Family
ID=34539591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003346773A Expired - Lifetime JP4366169B2 (ja) | 2003-10-06 | 2003-10-06 | アルミニウムの表面処理方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4366169B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007131900A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Japan Ltd | アルミニウム及びアルミニウム合金の表面処理方法 |
JP2007275876A (ja) * | 2006-03-17 | 2007-10-25 | Nippon Light Metal Co Ltd | アルミニウム塗装材及びその製造方法 |
JP2012081468A (ja) * | 2006-03-17 | 2012-04-26 | Nippon Light Metal Co Ltd | アルミニウム塗装材及びその製造方法 |
USRE45993E1 (en) | 2010-06-16 | 2016-05-03 | Seiko Epson Corporation | Polarization device, method of manufacturing the same, liquid crystal device, and electronic apparatus |
EP3441499A4 (en) * | 2016-04-05 | 2020-01-01 | Kanto Denka Kogyo Co., Ltd. | MATERIAL, STORAGE CONTAINER USING SAID MATERIAL, VALVE INSTALLED ON SAID STORAGE CONTAINER AND METHOD FOR STORING CHLORINE FLUORIDE AND METHOD OF USING CHLORINE FLUORIDE STORAGE CONTAINER |
-
2003
- 2003-10-06 JP JP2003346773A patent/JP4366169B2/ja not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007131900A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Japan Ltd | アルミニウム及びアルミニウム合金の表面処理方法 |
JP2007275876A (ja) * | 2006-03-17 | 2007-10-25 | Nippon Light Metal Co Ltd | アルミニウム塗装材及びその製造方法 |
JP2012081468A (ja) * | 2006-03-17 | 2012-04-26 | Nippon Light Metal Co Ltd | アルミニウム塗装材及びその製造方法 |
USRE45993E1 (en) | 2010-06-16 | 2016-05-03 | Seiko Epson Corporation | Polarization device, method of manufacturing the same, liquid crystal device, and electronic apparatus |
USRE47179E1 (en) | 2010-06-16 | 2018-12-25 | Seiko Epson Corporation | Polarization device, method of manufacturing the same, liquid crystal device, and electronic apparatus |
USRE49885E1 (en) | 2010-06-16 | 2024-03-26 | Seiko Epson Corporation | Polarization device, method of manufacturing the same, liquid crystal device, and electronic apparatus |
EP3441499A4 (en) * | 2016-04-05 | 2020-01-01 | Kanto Denka Kogyo Co., Ltd. | MATERIAL, STORAGE CONTAINER USING SAID MATERIAL, VALVE INSTALLED ON SAID STORAGE CONTAINER AND METHOD FOR STORING CHLORINE FLUORIDE AND METHOD OF USING CHLORINE FLUORIDE STORAGE CONTAINER |
US10982811B2 (en) | 2016-04-05 | 2021-04-20 | Kanto Denka Kogyo, Co., Ltd. | Material, storage container using the material, valve attached to the storage container, method of storing ClF and method of using ClF storage container |
Also Published As
Publication number | Publication date |
---|---|
JP4366169B2 (ja) | 2009-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4456378B2 (ja) | 導電性ダイヤモンド電極の製造方法 | |
JP4669605B2 (ja) | 半導体製造装置のクリーニング方法 | |
US6783863B2 (en) | Plasma processing container internal member and production method thereof | |
US5494713A (en) | Method for treating surface of aluminum material and plasma treating apparatus | |
JP2013527326A (ja) | プラズマ電解酸化コーティングにおける銅または微量金属汚染物質の低減 | |
JP2003218198A (ja) | 半導体装置の製造方法および半導体装置の製造装置 | |
JPH0338339B2 (ja) | ||
JP2008244292A (ja) | プラズマ処理装置の処理性能安定化方法 | |
CN110352267A (zh) | 具有降低的金属浓度的保护性氧化物涂层 | |
JPH10204526A (ja) | ステンレス鋼の不動態膜形成方法及びステンレス鋼 | |
JP4366169B2 (ja) | アルミニウムの表面処理方法 | |
JPH01319665A (ja) | アルミニウム材のイオン窒化方法 | |
JP3148878B2 (ja) | アルミニウム板、その製造方法及び該アルミニウム板を用いた防着カバー | |
JP2008007861A (ja) | アルミニウムの表面処理方法 | |
JP3929140B2 (ja) | 耐蝕性部材およびその製造方法 | |
JP7460771B2 (ja) | フッ化マグネシウム領域が形成させる金属体 | |
WO2021065327A1 (ja) | 耐食性部材 | |
Kyzioł et al. | Surfaces modification of Al-Cu alloys by plasma-assisted CVD | |
CN113891960B (zh) | 耐蚀性构件 | |
US20110117514A1 (en) | Silicon Firnaceware for Stressed Film | |
JP2004509461A (ja) | 熱処理された半導体基板の汚染を減少させるための装置および方法 | |
JPH09326384A (ja) | プラズマ処理装置 | |
JPH03215656A (ja) | フッ化不働態膜が形成されたステンレス鋼、その製造方法並びにそのステンレスを用いた装置 | |
JP4156792B2 (ja) | 半導体製造プロセス装置用シリコン部材の製造方法 | |
JP3908291B2 (ja) | 耐ハロゲン系ガス腐食性及び耐ハロゲン系プラズマ腐食性に優れたコーティング膜並びに該コーティング膜を施した積層構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050628 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20060705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20060705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070202 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070928 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071029 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20071214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090824 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120828 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4366169 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130828 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |