JP2005097736A5 - - Google Patents
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- Publication number
- JP2005097736A5 JP2005097736A5 JP2004242474A JP2004242474A JP2005097736A5 JP 2005097736 A5 JP2005097736 A5 JP 2005097736A5 JP 2004242474 A JP2004242474 A JP 2004242474A JP 2004242474 A JP2004242474 A JP 2004242474A JP 2005097736 A5 JP2005097736 A5 JP 2005097736A5
- Authority
- JP
- Japan
- Prior art keywords
- solution
- cobalt
- diffusion barrier
- barrier material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 12
- 230000004888 barrier function Effects 0.000 claims 9
- 239000002738 chelating agent Substances 0.000 claims 9
- 229910017052 cobalt Inorganic materials 0.000 claims 8
- 239000010941 cobalt Substances 0.000 claims 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 8
- 238000009792 diffusion process Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 229910052759 nickel Inorganic materials 0.000 claims 6
- 239000004094 surface-active agent Substances 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000007772 electroless plating Methods 0.000 claims 4
- 230000001603 reducing effect Effects 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 230000003139 buffering effect Effects 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- 239000000872 buffer Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/650,002 US6924232B2 (en) | 2003-08-27 | 2003-08-27 | Semiconductor process and composition for forming a barrier material overlying copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005097736A JP2005097736A (ja) | 2005-04-14 |
| JP2005097736A5 true JP2005097736A5 (enExample) | 2007-10-04 |
Family
ID=34217057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004242474A Pending JP2005097736A (ja) | 2003-08-27 | 2004-08-23 | 銅を覆う障壁物質を形成するための半導体処理方法及び組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6924232B2 (enExample) |
| JP (1) | JP2005097736A (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205233B2 (en) * | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
| US7268074B2 (en) * | 2004-06-14 | 2007-09-11 | Enthone, Inc. | Capping of metal interconnects in integrated circuit electronic devices |
| JP4503401B2 (ja) * | 2004-09-08 | 2010-07-14 | 株式会社荏原製作所 | 金属膜の成膜方法及び配線の形成方法 |
| US7176133B2 (en) * | 2004-11-22 | 2007-02-13 | Freescale Semiconductor, Inc. | Controlled electroless plating |
| US20080207005A1 (en) * | 2005-02-15 | 2008-08-28 | Freescale Semiconductor, Inc. | Wafer Cleaning After Via-Etching |
| US20060280860A1 (en) * | 2005-06-09 | 2006-12-14 | Enthone Inc. | Cobalt electroless plating in microelectronic devices |
| US20070049008A1 (en) * | 2005-08-26 | 2007-03-01 | Martin Gerald A | Method for forming a capping layer on a semiconductor device |
| JP2009507365A (ja) * | 2005-09-01 | 2009-02-19 | エヌエックスピー ビー ヴィ | 二重ダムシーン相互接続上のキャッピング層形成 |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US20090045164A1 (en) * | 2006-02-03 | 2009-02-19 | Freescale Semiconductor, Inc. | "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics |
| US20070184652A1 (en) * | 2006-02-07 | 2007-08-09 | Texas Instruments, Incorporated | Method for preparing a metal feature surface prior to electroless metal deposition |
| US20070181653A1 (en) * | 2006-02-08 | 2007-08-09 | Michaelson Lynne M | Magnetic alignment of integrated circuits to each other |
| WO2007095972A1 (en) * | 2006-02-24 | 2007-08-30 | Freescale Semiconductor, Inc. | Semiconductordevice including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprissing multiple organic components for use in a semiconductor device |
| WO2007095973A1 (en) * | 2006-02-24 | 2007-08-30 | Freescale Semiconductor, Inc. | Integrated system for semiconductor substrate processing using liquid phase metal deposition |
| US7378339B2 (en) * | 2006-03-30 | 2008-05-27 | Freescale Semiconductor, Inc. | Barrier for use in 3-D integration of circuits |
| US7410544B2 (en) * | 2006-04-21 | 2008-08-12 | Freescale Semiconductor, Inc. | Method for cleaning electroless process tank |
| US7772128B2 (en) * | 2006-06-09 | 2010-08-10 | Lam Research Corporation | Semiconductor system with surface modification |
| US7572723B2 (en) * | 2006-10-25 | 2009-08-11 | Freescale Semiconductor, Inc. | Micropad for bonding and a method therefor |
| US20080254205A1 (en) * | 2007-04-13 | 2008-10-16 | Enthone Inc. | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys |
| US7807572B2 (en) * | 2008-01-04 | 2010-10-05 | Freescale Semiconductor, Inc. | Micropad formation for a semiconductor |
| RU2492279C2 (ru) * | 2008-01-24 | 2013-09-10 | Басф Се | Неэлектролитическое осаждение барьерных слоев |
| US9551074B2 (en) * | 2014-06-05 | 2017-01-24 | Lam Research Corporation | Electroless plating solution with at least two borane containing reducing agents |
| US10325876B2 (en) | 2014-06-25 | 2019-06-18 | Nxp Usa, Inc. | Surface finish for wirebonding |
| US9786634B2 (en) | 2015-07-17 | 2017-10-10 | National Taiwan University | Interconnection structures and methods for making the same |
| JP7614232B2 (ja) | 2021-01-18 | 2025-01-15 | 東京エレクトロン株式会社 | めっき処理方法およびめっき処理装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5755859A (en) * | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
| US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
| US6551856B1 (en) * | 2000-08-11 | 2003-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming copper pad redistribution and device formed |
| US6605874B2 (en) | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
| US6645567B2 (en) | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6528409B1 (en) | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
| US6797312B2 (en) * | 2003-01-21 | 2004-09-28 | Mattson Technology, Inc. | Electroless plating solution and process |
-
2003
- 2003-08-27 US US10/650,002 patent/US6924232B2/en not_active Expired - Fee Related
-
2004
- 2004-08-23 JP JP2004242474A patent/JP2005097736A/ja active Pending
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