JP2005079424A - Package for electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable and inexpensive package for electronic component that can be reduced in weight, thickness, length, and size, can prevent the occurrence of cracks in a ceramic substrate and splitting failures when single packages are split from an assemblage of many packages, and is free from the oozing out of a metallized layer. <P>SOLUTION: This package 10 for electronic component is composed of a ceramic substrate 11 having a bank 14 around a cavity 13, and, after an electronic component element 12 is mounted on the bottom of the cavity 13, the element 12 is airtightly sealed by placing a metal lid 20 on the bank 14 and joining the lid 20 to the bank 14 by seam welding. The package 10 has the metallized layer 21 on the top surface of the bank 14 of the substrate 11 and, in addition, plated coating films 26, 26a, and 26b formed by sequentially performing first Ni and Cu plating and second Ni and Au plating, first Ni and Cu plating and second Ni plating, or first Ni and Cu plating in this order on the metallized layer 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electronic component package comprising a ceramic substrate on which an electronic component element is mounted in a cavity portion and a metal lid is bonded to hermetically seal the electronic component element. The present invention relates to an electronic component package for hermetically sealing an electronic component element by joining a metal lid directly on the metallized layer formed on the substrate and a plating film formed thereon by seam welding.

  In recent years, electronic component packages for accommodating electronic component elements such as semiconductor elements, crystal resonators, and piezoelectric elements have been downsized and highly reliable for devices on which electronic component elements are mounted, such as mobile phones and personal computers. In response to demands for improving the characteristics, there is an urgent need to deal with lighter, thinner, and more reliable devices. In order to cope with this, an electronic component package made of a ceramic base with high hermetic reliability is used as the package.

  As shown in FIG. 4A, a typical conventional electronic component package 50 has KV (Fe—Ni—Co alloy, trade name “Kovar”) on the outer peripheral edge of the upper surface of a ceramic base 51. Or a ring-shaped metal frame 52 having a thermal expansion coefficient approximate to a ceramic made of 42 alloy (Fe—Ni alloy) or the like, and, for example, a cavity portion 54 for mounting the semiconductor element 53 in the center portion. Is formed. In order to produce the ceramic substrate 51, one or more ceramic green sheets are screen-printed using a conductive paste made of a refractory metal such as W (tungsten) or Mo (molybdenum) to form a conductor via. In addition, a conductor wiring pattern or the like is formed. This conductor wiring pattern includes a joining pattern 55 for joining the metal frame 52 formed on the upper surface of the bank portion 56 around the cavity portion 54. Next, in the case of a plurality of ceramic green sheets, a laminated body is formed by laminating, and then the ceramic substrate 51 is manufactured by simultaneously firing one or more laminated ceramic green sheets and a refractory metal. Then, after forming a Ni plating film on all the conductor wiring patterns including the bonding pattern 55 exposed on the outer surface of the ceramic substrate 51, a brazing material 57 made of Ag—Cu brazing or the like is formed on the bonding pattern 55. The metal frame body 52 is placed through, heated and brazed and joined. Then, a plating film 58 applied by Ni plating and Au plating is formed on all metal surfaces exposed to the outside of the joined body of the ceramic base 51 and the metal frame 52, and the electronic component package 50 is manufactured. Yes. The electronic component package 50 is usually divided into individual pieces along a dividing groove for forming a large number of packages on a large ceramic sheet and dividing them into pre-formed pieces. It is formed by doing.

  As shown in FIG. 4B, in the electronic component package 50, for example, a semiconductor element 53, which is an example of an electronic component element, is mounted in a cavity portion 54, and is electrically connected to the outside by a bonding wire 59. State. The metal frame 52 is made of KV, 42 alloy, or the like through a brazing material 57a made of, for example, Au—Sn brazing, having a melting point lower than that of the brazing material 57 when the metal frame 52 is joined. The metal lid 60 is placed, and the pair of rollers of the seam welding machine 61 is moved around the corner portion of the outer peripheral end of the metal lid 60 to join the metal lid 60 to the metal frame 52 by seam welding. ing. As a result, electronic component elements such as the semiconductor element 53 can be hermetically sealed with the electronic component package 50 and the metal lid 60.

  As shown in FIG. 5, another conventional electronic component package 50a has a configuration in which a ring-shaped metal frame 52 is excluded from the upper surface of a bank portion 56 around a cavity portion 54 of a ceramic base 51. is there. The electronic component package 50a is formed by forming a bonding pattern 55 on the upper surface of the bank portion 56 and further forming a plating film 58 applied by Ni plating and Au plating on the upper surface. A metal lid 60 is placed directly on the plating film 58 of the bank portion 56 via a brazing material 57b made of, for example, Ag—Cu brazing or the like. The metal lid 60 is directly seam welded joined by moving a pair of rollers of a seam welder 61 (see FIG. 4B) around.

Conventionally, a method for manufacturing a package for an electronic component includes a method in which a brazing material is clad on a metallized layer of an inexpensive and thin thin ceramic case without bonding an expensive metal frame to a ceramic substrate. A method is disclosed in which the formed lid is directly placed and the brazing material is melted and bonded by an electron beam (see, for example, Patent Document 1). Further, in an electronic component device in which a metal lid is seam welded to a bank portion of a ceramic base, a metal base layer of 10 to 30 μm is formed on the top surface of the bank as a ceramic base, and Ni of 5 to 15 μm is formed thereon. The thing of the structure which provided the plating film which consists of plating is proposed (for example, refer patent document 2). In addition, in a package for an electronic component in which a metal lid is melted and joined to a bank portion of a ceramic base by electric resistance heat, a metalized layer is formed on the top of the bank as a ceramic base, and Ni is formed thereon. A plating film made of plating and Au plating, or a structure in which various brazing materials are joined in addition to this has been proposed (see, for example, Patent Document 3).
Japanese Patent No. 3248842 JP 2000-223606 A JP 2000-236035 A

However, the conventional electronic component package as described above has the following problems.
(1) A package for an electronic component in which a ring-shaped metal frame is joined to the upper surface of a bank portion around a cavity portion of a ceramic substrate is required to be lighter, thinner, and smaller because the height of the package itself increases. It can no longer be used for existing electronic component devices. Moreover, since the ring-shaped metal frame made of KV or the like is expensive, the cost of the electronic component package is increased.
(2) When a metal lid is joined to a package for an electronic component in a form in which a metal frame is attached to a ceramic base with a seam welder, or a ring-like shape is formed on the top of the bank around the cavity of the ceramic base. When a metal lid is joined to a package for an electronic component in a form excluding the metal frame with a seam welder, the heating temperature from the seam welder is about 1200 ° C. The metal lid body is locally concentrated on the metal frame body or the ceramic substrate itself, and the metal lid body is joined to the electronic component package in a state where the metal lid body is largely thermally expanded. Even if the thermal expansion coefficient of the metal lid is similar to that of a ceramic substrate, there is a difference between the thermal expansion coefficient of the ceramic substrate and the ceramic substrate during a rapid temperature rise. Due to the shrinkage of the metal lid due to the cooling, distortion occurs, and a bowl-like deflection occurs on the bottom side of the ceramic substrate. As a result, tensile stress acts on the bottom surface side of the ceramic substrate, and cracks may be generated from the bottom surface side, reducing the reliability of the electronic component package.
(3) The electronic component package is formed for forming a conductor wiring pattern on the ceramic green sheet and then dividing the electronic component package into a single piece from a large number of electronic component packages on the conductor wiring pattern. At the same time that there is a portion for forming a groove, the thickness of the Ni plating film is required to be about 5 to 20 μm in order to protect this conductor wiring pattern from the atmosphere. If this Ni plating film becomes too thick, it enters the wall surface of the dividing groove of the conductor wiring pattern and narrows the dividing groove. Moreover, since the Ni plating itself has a high hardness, it prevents normal division and causes poor division. May occur.
(4) If the Ni plating film becomes too thin, there may be a problem with the cover property for protecting the metallized layer under the plating film from the atmosphere, and the metallized layer may exude onto the plating film. is there.
The present invention has been made in view of such circumstances, can cope with light and thin packages, is inexpensive, prevents cracks in a ceramic substrate, and further, from a large number of aggregates to individual pieces. An object of the present invention is to provide a highly reliable electronic component package that prevents a division failure during division and does not exude a metallized layer.

An electronic component package according to the present invention that meets the above-described object comprises a ceramic base having a bank around the cavity, and after the electronic component element is mounted on the bottom of the cavity, a metal lid is formed on the bank. In an electronic component package that is placed and joined by seam welding and the electronic component element is hermetically sealed, the package has a metallized layer on the top surface of the bank of the ceramic substrate, and the first Ni is formed on the metallized layer. , Cu, second Ni, Au plating order, first Ni, Cu, second Ni plating order, or first Ni, Cu plating order.
Here, in the electronic component package, the thickness of the first Ni plating film and the second Ni plating film is more than 0 and 4 μm or less, the thickness of the Cu plating film is 4 μm or more, and the first Ni plating film The sum of the thickness of the plating film, the thickness of the Cu plating film, and the thickness of the second Ni plating film, or the sum of the thickness of the first Ni plating film and the thickness of the Cu plating film is 5 μm or more. Is good.

  The package for electronic components according to claim 1 and claim 2 dependent thereon has a metallized layer on the upper surface of the bank portion of the ceramic substrate having a bank portion around the cavity portion, and the first metal layer is formed on the metalized layer. Because it has a plating film applied in the order of 1 Ni, Cu, 2nd Ni, Au plating, 1st Ni, Cu, 2nd Ni plating, or 1st Ni, Cu plating The package can be made inexpensive, light and thin without the need for a metal frame. In addition, by using a Cu plating film rich in ductility, the distortion of the ceramic substrate due to the shrinkage of the metal lid can be alleviated, and the occurrence of cracks in the ceramic substrate can be prevented. In addition, even if an Au plating film is provided on the plating film, the melting point can be lowered than that of Au alone by making an alloy of Au and Cu that melt into the brazing material for joining the metal lid, so that the metal The distortion of the ceramic substrate due to the shrinkage of the lid can be alleviated, and it can act to prevent the occurrence of cracks in the ceramic substrate. Furthermore, by providing a Cu plating film, the thickness of the Ni plating film can be reduced, and by reducing the penetration of the hard Ni plating into the dividing groove, a large number of packages of electronic component packages can be assembled. Occurrence of a division failure when dividing the body into individual pieces can be prevented. Furthermore, by using the Cu plating film, even if the Ni plating film is thinned, it is possible to prevent the metal rice layer from seeping into the atmosphere.

  In particular, in the electronic component package according to claim 2, the thicknesses of the first Ni plating film and the second Ni plating film are more than 0 and 4 μm or less, respectively, and the thickness of the Cu plating film is 4 μm or more, The sum of the thickness of the first Ni plating film, the thickness of the Cu plating film, and the thickness of the second Ni plating film, or the sum of the thickness of the first Ni plating film and the thickness of the Cu plating film Since it has 5 μm or more, it is possible to reduce the amount of Ni dissolved in the brazing material for joining the metal lid by reducing the thickness of the Ni plating film, and to lower the melting point of the Cu—Ni alloy in the brazing material. Even when the Au plating film is provided, the melting point of the Au—Ni alloy can be lowered, the distortion of the ceramic substrate due to the shrinkage of the metal lid can be alleviated, and the occurrence of cracks in the ceramic substrate can be prevented. Further, by reducing the penetration of the Ni plating with high hardness into the dividing groove, it is possible to prevent the occurrence of a division failure when dividing the electronic component package from a large number of assemblies into individual pieces. In addition, by increasing the thickness of the Cu plating film, the amount of Cu dissolved in the brazing material for joining the metal lid can be increased, and the melting point of the Cu-Ni alloy in the brazing material can be lowered. The distortion of the ceramic substrate due to the shrinkage of the lid can be alleviated, and it can act to prevent the occurrence of cracks in the ceramic substrate. Furthermore, when the sum of the thicknesses of the first Ni plating film and the Cu plating film is 5 μm or more, it is possible to prevent the metallized layer from seeping into the atmosphere.

Subsequently, the best mode for carrying out the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a perspective view of an electronic component package according to an embodiment of the present invention, an AA ′ line enlarged longitudinal sectional view, and FIG. 2 is an electronic component package, respectively. FIGS. 3A and 3B are explanatory views for joining the metal lid, and FIGS. 3A and 3B are explanatory views of a modified example and another modified example of the electronic component package, respectively.

  As shown in FIGS. 1A and 1B, an electronic component package 10 according to an embodiment of the present invention includes a semiconductor element 11 and an electronic component element such as a crystal resonator at the center of a ceramic substrate 11. A cavity portion 13 for mounting 12 is provided, and a bank portion 14 is provided around the cavity portion 13 so that the electronic component element 12 mounted on the cavity portion 13 can be surrounded. In the electronic component package 10, an electronic component element 12 is mounted and bonded to the bottom of the cavity portion 13. For example, when the electronic component element 12 is made of a semiconductor element, the semiconductor element and the ceramic substrate 11 are attached to the electronic component element 12. The conductor wiring pattern 15 formed and extending in the cavity portion 13 is connected by a bonding wire 16. The semiconductor element is electrically connected to the external connection terminal 18 formed on the bottom surface of the ceramic substrate 11 through a castellation 17 formed on the side wall of the ceramic substrate 11 connected to the conductor wiring pattern 15. It is in a conductive state. In this electronic component package 10, an electronic component element 12 is mounted, a metal lid 20 is joined via a brazing material 19, and the electronic component element 12 is hermetically sealed.

  Here, examples of the ceramic base material used for the ceramic substrate 11 of the electronic component package 10 include alumina and aluminum nitride, and the material is not particularly limited. For example, when a ceramic green sheet made of alumina is used as the ceramic base material, the ceramic green sheet is first prepared by adding an appropriate amount of a sintering aid such as magnesia, silica, calcia to an aluminum oxide powder to a powder such as dioctyl phthalate. A plasticizer, a binder such as an acrylic resin, and a solvent such as toluene, xylene, and alcohol are added, and the mixture is sufficiently kneaded and defoamed to prepare a slurry having a viscosity of 2000 to 40000 cps. Next, it is formed into a sheet having a desired thickness, for example, 0.12 mm by a doctor blade method, and then dried and cut into a rectangular shape having a desired size.

  In order to form the ceramic substrate 11, when a sheet-like ceramic green sheet is used which is fired at a high temperature such as alumina or aluminum nitride, a high melting point metal such as W or Mo is used as a conductive paste. A paste consisting of The ceramic green sheet is screen-printed using this conductor paste, and the conductor wiring pattern 15 for connecting the bonding wires 16 and the pattern for the metallized layer 21 on the upper surface of the bank portion 14 are used. In addition, other desired conductor patterns, for example, through-hole conductors and conductor patterns for the castellation 17 and the external connection terminals 18 are formed. Next, the ceramic green sheet having a plurality of laminated layers and the dried conductor paste are simultaneously fired in a firing furnace to form a fired body. Thus, the electronic component package 10 has the metallized layer 21 on the top surface of the bank portion 14 of the ceramic base 11 made of a fired body.

  In addition, the ceramic substrate 11 of the fired body is subjected to the first Ni plating on all conductor patterns exposed on the outer surface, so that the metallized layer 21 formed on the upper surface of the bank portion 14 is formed. Alternatively, the first Ni plating film 22 is formed on the upper surface of the conductor wiring pattern 15 or the like. Subsequently, Cu plating is performed on the upper surface of the first Ni plating film 22 to form a Cu plating film 23. Furthermore, the second Ni plating is performed on the upper surface of the Cu plating film 23 to form a second Ni plating film 24. Finally, Au plating is performed on the upper surface of the second Ni plating film 24 to form an Au plating film 25. As a result, the electronic component package 10 has the first Ni plating film 22, the Cu plating film 23, the second Ni plating film 24, and the Au plating film on the upper surface of the metallized layer 21 on the upper surface of the bank portion 14 of the ceramic substrate 11. It has the plating film 26 which consists of four layers of the order of 25. The plating film 26 is formed on the upper surface of the conductor wiring pattern 15, the castellation 17, the external connection terminal 18, etc. in addition to being formed on the upper surface of the metallized layer 21 on the upper surface of the bank portion 14. Is omitted.

  As shown in FIG. 2, for example, an electronic component element 12 such as a semiconductor element is mounted on the electronic component package 10 and is electrically connected to the outside by a bonding wire 16, and then metallized on the top surface of the bank portion 14. On the upper surface of the plating film 26 formed on the layer 21, from a metal whose thermal expansion coefficient is similar to that of ceramic, such as KV or 42 alloy, through a brazing material 19 made of Ag—Cu brazing, Au—Sn brazing, or the like. A metal lid 20 is placed. The pair of rollers of the seam welding machine 27 are moved in the vertical and horizontal directions and seam welded to the electronic component package 10 to join the outer peripheral end corner of the metal lid 20. In this welding joining, since the temperature around the joint portion of the metal lid 20 is about 1200 ° C. during joining, the metal lid 20 is joined to the ceramic substrate 11 in a thermally expanded state. After the bonding, the metal lid 20 contracts with cooling. The distortion of the ceramic substrate 11 due to the contraction generated here is because the Cu plating film 23 having a high ductility is provided in the plating film 26. The distortion of the substrate 11 can be alleviated, and the occurrence of cracks in the ceramic substrate 11 can be prevented.

  As shown in FIG. 3A, an electronic component package 10a, which is a modification of the electronic component package 10 according to the embodiment of the present invention, is formed on the upper surface of the metallized layer 21 on the upper surface of the bank portion 14 of the ceramic substrate 11. , The first Ni plating film 22, the Cu plating film 23, and the second Ni plating film 24. Further, as shown in FIG. 3B, an electronic component package 10b according to another modification of the electronic component package 10 according to the embodiment of the present invention is metallized on the top surface of the bank portion 14 of the ceramic substrate 11. On the upper surface of the layer 21, a plating film 26 b composed of two layers in the order of the first Ni plating film 22 and the Cu plating film 23 is provided. The plating films 26a and 26b are formed not only on the upper surface of the metallized layer 21 on the upper surface of the bank 14, but also on the upper surface of the conductor wiring pattern 15, the castellation 17, the external connection terminal 18, and the like. The And on the upper surfaces of the plating films 26a, 26b formed on the conductor wiring pattern 15 other than the plating films 26a, 26b formed on the upper surface of the metallized layer 21 on the bank portion 14, the castellation 17, the external connection terminal 18, etc. The plating resist seal or the like is spread on the surface of the plating films 26a and 26b formed on the upper surface of the metallized layer 21 on the upper surface of the bank portion 14 so that the plating cannot be performed. Au plating is performed on the plating film 26b by second Ni plating and Au plating. Note that these measures are for improving the wire bondability on the conductor wiring pattern 15 and for improving the solder connectability on the external connection terminals 18 and are limited to the above-described measures. The type of plating can be changed or omitted as necessary.

  Each of the electronic component packages 10, 10 a, 10 b is provided with a ductile Cu plating film 23 on the upper surface of the first Ni plating film 22. The distortion of the ceramic substrate 11 due to the shrinkage of the metal lid 20 after bonding can be reduced, and the generation of cracks in the ceramic substrate 11 can be prevented. When the Au plating film 25 is provided in the plating film 26 as in the electronic component package 10, it melts into the brazing material 19 made of Ag—Cu brazing or the like when the metal lid 20 is joined. Since Au and Cu form an alloy, the melting point can be lowered as compared with the case of Au alone without Cu, the distortion of the ceramic substrate 11 due to the shrinkage of the metal lid 20 can be reduced, and the occurrence of cracks in the ceramic substrate 11 Acts to prevent Note that the first Ni plating film 22 and / or the second Ni plating film 24 used in the electronic component packages 10, 10 a, and 10 b are, for example, Ni plating made of Ni alloy plating such as Ni—Co plating. It may be a film. Further, the Cu plating film 23 may be a Cu alloy plating film.

  The thickness of the first Ni plating film 22 applied to the upper surface of the metallized layer 21 on the upper surface of the bank portion 14 of the ceramic substrate 11 and the thickness of the second Ni plating film 24 applied to the upper surface of the Cu plating film 23 are as follows: It is preferable that each thickness is greater than 0 and 4 μm or less. When the thickness of each Ni plating film exceeds 4 μm, the metallized layer 21 in the dividing groove for dividing the electronic component package 10, 10 a, 10 b composed of a large number of pieces into individual pieces is formed. Since Ni coating with high hardness enters the wall surface to form a coating film, a division defect that cannot be divided along the dividing groove is generated when dividing into individual pieces. Further, by reducing the thickness of each Ni plating film to 4 μm or less, the amount of Ni dissolved in the brazing material 19 when the metal lid 20 is joined can be reduced, and the Cu—Ni in the brazing material 19 can be reduced. Since the melting point of the alloy can be lowered and the distortion of the ceramic substrate 11 due to the shrinkage of the metal lid 20 can be alleviated, it acts in the direction of preventing the occurrence of cracks in the ceramic substrate 11. Further, even when the Au plating film 25 is provided on the upper surface of the second Ni plating film 24, the melting point of the Au—Ni alloy in the brazing material 19 can be lowered. Acts in the direction to prevent. The first Ni plating film 22 is applied to the upper surface of the metallized layer 21 because the adhesion strength between the Cu plating film 23 and the metallized layer 21 is low when the Cu plating film 23 is directly applied to the upper surface of the metallized layer 21. This is to prevent the peeling of the plating generated in the film.

  The thickness of the Cu plating film 23 on the upper surface of the first Ni plating film 22 applied on the upper surface of the metallized layer 21 on the upper surface of the bank portion 14 of the ceramic substrate 11 is preferably 4 μm or more. If the thickness of the Cu plating film 23 is less than 4 μm, the effect of alleviating the distortion of the ceramic substrate 11 due to shrinkage after joining of the metal lid 20 due to the ductility of Cu is reduced. The effect of preventing the occurrence is reduced. Further, increasing the thickness of the Cu plating film 23 can increase the amount of Cu dissolved in the brazing material 19 when the metal lid 20 is joined, so that the melting point of the Cu—Ni alloy in the brazing material 19 is increased. It can be lowered, the distortion of the ceramic substrate 11 due to the shrinkage of the metal lid 20 can be relaxed, and it acts in the direction of preventing the ceramic substrate 11 from cracking.

  A first Ni plating film 22 applied to the upper surface of the metallized layer 21, a Cu plating film 23 applied to the upper surface of the first Ni plating film 22, and a second Ni plating film applied to the upper surface of the Cu plating film 23 The sum of the thicknesses of 24 or the sum of the thicknesses of the first Ni plating film 22 applied to the upper surface of the metallized layer 21 and the Cu plating film 23 applied to the upper surface of the first Ni plating film 22 is 5 μm. It is good to be formed as mentioned above. The sum of the thicknesses of the first Ni plating film 22, the Cu plating film 23, and the second Ni plating film 24, or the sum of the thicknesses of the first Ni plating film 22 and the Cu plating film 23 is 5 μm. Below the thickness, the thickness for protecting the metallized layer 21 from the atmosphere is insufficient, and the metallized layer 21 may ooze out.

  The present inventor uses alumina for the ceramic base material, W for the conductive paste for forming the metallized layer, and each plating film on the upper surface of the metallized layer on the top of the bank portion of the ceramic substrate having an outer dimension of 5 × 2 mm. (1) The crack occurrence state of the ceramic substrate after seam welding joining the KV metal lid with Ag-Cu brazing, for the examples in which the film thickness and the combination of the types of plating were changed, 2) Situation of occurrence of division failure when dividing an assembly electronic component package into an individual electronic component package, (3) Exudation of metallized layer by plating film after reliability test by high temperature and high humidity test The defect occurrence status was confirmed. At the same time, the conventional plating film has a Ni plating film and an Au plating film in which the metal lid is directly joined to the electronic component package. The occurrence of crack defects, division defects, and seepage defects is also observed. confirmed. The thickness of the plating film of the example is 0.5, 1, 3, 4, 5 μm for the first Ni plating film, 3, 4, 7 μm for the Cu plating film, 0.5 for the second Ni plating film, 1, 3, 4, 5 μm, and Au plating film of 0.6 μm was used. The results are shown in Table 1.

  In the case of a plating film comprising four layers in the order of the first Ni plating film, Cu plating film, second Ni plating film, and Au plating film of the example, the first Ni plating film, the Cu plating film, the second In the case of a plating film consisting of three layers in the order of the Ni plating film, in both cases of the first Ni plating film and the plating film consisting of two layers in the order of the Cu plating film, occurrence of crack failure, occurrence of division failure, It was confirmed that the occurrence of exuding defects could be prevented. Among these, it was confirmed that when the thickness of the Cu plating film was less than 4 μm, there was a slight problem with respect to the occurrence of crack defects in the ceramic substrate. Moreover, when each of the thickness of the first Ni plating film and the thickness of the second Ni plating film exceeds 4 μm, it is necessary to divide the assembly electronic component package into the individual electronic component package. It was confirmed that there were some problems with the occurrence of division failures. Furthermore, the sum of the thickness of the first Ni plating film, the thickness of the Cu plating film, and the thickness of the second Ni plating film, or the sum of the thickness of the first Ni plating film and the thickness of the Cu plating film Was less than 5 μm, it was confirmed that there was a slight problem with respect to the occurrence of exudation failure of the metallized layer. In the case where the Ni plating film of the conventional example and the Au plating film are used, it has been confirmed that when the Ni plating film is as thin as about 3 μm, there is a problem with the occurrence of a seepage failure of the metallized layer. Further, when the thickness of the Ni plating film becomes as thick as about 15 μm, there may occur a division failure when dividing the assembly electronic component package into an individual electronic component package or a crack failure of the ceramic substrate. Was confirmed.

  The electronic component package according to the present invention is mounted with an electronic component such as a semiconductor element or a crystal resonator, and is small and highly reliable. For example, an electronic component such as a mobile phone or a notebook personal computer. It can be used by being incorporated in an apparatus.

(A), (B) is the perspective view of the package for electronic components which concerns on one embodiment of this invention, respectively, and an A-A 'line enlarged vertical sectional view. It is explanatory drawing which joins a metal cover body to the package for electronic components. (A), (B) is explanatory drawing of the modification of the package for electronic components, and another modification, respectively. (A), (B) is explanatory drawing of the package for the conventional electronic components, and explanatory drawing which joins a metal cover body, respectively. It is explanatory drawing of the other conventional package for electronic components.

Explanation of symbols

  10, 10a, 10b: Electronic component package, 11: Ceramic substrate, 12: Electronic component element, 13: Cavity, 14: Bank, 15: Conductor wiring pattern, 16: Bonding wire, 17: Castellation, 18 : External connection terminal, 19: brazing material, 20: metal lid, 21: metallized layer, 22: first Ni plating film, 23: Cu plating film, 24: second Ni plating film, 25: Au plating film , 26, 26a, 26b: plating film, 27: seam welding machine

Claims (2)

It consists of a ceramic base having a bank around the cavity, and after an electronic component element is mounted on the bottom of the cavity, a metal lid is placed on the bank and joined by seam welding. In an electronic component package in which component elements are hermetically sealed,
The ceramic base has a metallized layer on the top surface of the bank, and the first Ni, Cu, second Ni, Au plating order, first Ni, Cu, second An electronic component package comprising a plating film applied in the order of Ni plating or the order of first Ni and Cu plating.   2. The electronic component package according to claim 1, wherein the thicknesses of the first Ni plating film and the second Ni plating film are each greater than 0 and 4 μm or less, and the thickness of the Cu plating film is 4 μm or more. , The sum of the thickness of the first Ni plating film, the thickness of the Cu plating film, and the thickness of the second Ni plating film, or the thickness of the first Ni plating film and the Cu plating film A package for electronic parts, characterized in that the sum of the thicknesses is 5 μm or more.

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