JP6108734B2 - Electronic component element storage package - Google Patents

Electronic component element storage package Download PDF

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JP6108734B2
JP6108734B2 JP2012203887A JP2012203887A JP6108734B2 JP 6108734 B2 JP6108734 B2 JP 6108734B2 JP 2012203887 A JP2012203887 A JP 2012203887A JP 2012203887 A JP2012203887 A JP 2012203887A JP 6108734 B2 JP6108734 B2 JP 6108734B2
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metallized film
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component element
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勝裕 西川
勝裕 西川
日高 明弘
明弘 日高
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NGK Electronics Devices Inc
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Description

本発明は、キャビティ部に半導体素子や、圧電振動片等の電子部品素子を搭載し、金属製蓋体を接合して電子部品素子を中空状態で気密に封止して収納するための電子部品素子収納用パッケージであって、より詳細には、複数の個片体が平面的に縦横方向に隣接して多数個配列する母基板から分割溝で分割されてなる電子部品素子収納用パッケージに関する。   The present invention provides an electronic component for mounting an electronic component element such as a semiconductor element or a piezoelectric vibrating piece in a cavity, and sealingly storing the electronic component element in a hollow state by joining a metal lid. More specifically, the present invention relates to an electronic component element storing package in which a plurality of individual pieces are divided by dividing grooves from a mother board on which a plurality of individual pieces are arranged adjacent to each other in the vertical and horizontal directions.

近年、電子部品素子収納用パッケージは、電子部品素子を搭載させた装置、例えば、携帯電話や、パソコン等の小型化、高信頼性化等の要求に伴い、ますます軽薄短小化、高信頼性化等への対応が求められている。これに対応するために、電子部品素子収納用パッケージには、アルミナ(Al)や、窒化アルミニウム(AlN)等のセラミック製からなるセラミック基体を用いている。そして、電子部品素子収納用パッケージは、セラミック基体の上面外周部に設けるタングステン(W)や、モリブデン(Mo)等の高融点金属からなる環状メタライズ膜の表面にNiめっき被膜を形成した後、間にAgCuろう材を介して加熱してろう付け接合する環状金属枠体を設けている。あるいは、電子部品素子収納用パッケージには、セラミック基体と、このセラミック基体と同じセラミック製からなるセラミック枠体との接合体を用いている。そして、電子部品素子収納用パッケージは、セラミック枠体の上面に設ける環状メタライズ膜の表面にNiめっき被膜を形成した後、間にAgCuろう材を介して加熱してろう付け接合する環状金属枠体を設けている。この環状金属枠体は、通常、下面にAgCuろう材がクラッドされており、この面を、表面にNiめっき被膜が施された環状メタライズ膜の上面に当接させ加熱してろう付け接合されるようになっている。これによって、環状金属枠体は、下面がNiめっき被膜の施された環状メタライズ膜の上面に接合されると共に、環状メタライズ膜の上面と環状金属枠体の壁面との間にAgCuろうメニスカスを形成して接合されるようになっている。また、Niめっき被膜は、AgCuろう材との濡れ性に優れ、環状メタライズ膜上に濡れ広がって環状金属枠体を接合させるために、通常、0.3μm以上の厚みが施されている。 In recent years, electronic component element storage packages have become increasingly lighter, smaller, and more reliable in response to demands for downsizing and high reliability of devices equipped with electronic component elements such as mobile phones and personal computers. There is a need to respond to changes. In order to cope with this, a ceramic substrate made of ceramic such as alumina (Al 2 O 3 ) or aluminum nitride (AlN) is used for the electronic component element storage package. The electronic component element storage package is formed by forming a Ni plating film on the surface of an annular metallized film made of refractory metal such as tungsten (W) or molybdenum (Mo) provided on the outer periphery of the upper surface of the ceramic substrate. Is provided with an annular metal frame that is heated and brazed through an AgCu brazing material. Alternatively, the electronic component element storage package uses a joined body of a ceramic base and a ceramic frame made of the same ceramic as the ceramic base. The electronic component element storage package is formed by forming an Ni plating film on the surface of an annular metallized film provided on the upper surface of the ceramic frame, and then heating and brazing the Ag metal brazing material between them. Is provided. This annular metal frame is usually clad with an AgCu brazing material on the lower surface, and this surface is brought into contact with the upper surface of the annular metallized film with the Ni plating film applied to the surface to be brazed and joined. It is like that. Thereby, the lower surface of the annular metal frame is bonded to the upper surface of the annular metallized film on which the Ni plating film is applied, and an AgCu brazing meniscus is formed between the upper surface of the annular metallized film and the wall surface of the annular metal frame. Are joined together. In addition, the Ni plating film is excellent in wettability with the AgCu brazing material, and usually has a thickness of 0.3 μm or more in order to wet and spread on the annular metallized film and join the annular metal frame.

上記の電子部品素子収納用パッケージは、セラミック基体の上面と、環状金属枠体の内周側壁面、又はセラミック基体の上面と、セラミック枠体及び環状金属枠体の内周側壁面で形成されるキャビティ部に、電子部品素子が搭載された後、環状金属枠体の上面にシーム溶接で金属製蓋体を接合させる小型化であっても気密信頼性の高いパッケージとして用いている。このような電子部品素子収納用パッケージは、安価にすることが求められているので、従来から、個片体の電子部品素子収納用パッケージが縦横方向に隣接して配列するようにして母基板内に多数個を形成して作業の合理化を図っている。そして、母基板には、通常、焼成前の複数枚の大型のセラミックグリーンシートの積層体に多数個の個片体が縦横方向に配列する押圧溝を押圧刃で押圧して設け、焼成した後に個片体に分割できる分割溝とし、この分割溝で分割することでそれぞれが所定の大きさの安価な個片体の電子部品素子収納用パッケージになるようにしている。なお、上記のNiめっき被膜上に環状金属枠体をAgCuろう付けさせ、分割溝で分割する前の母基板には、外気中に露出する金属部分の酸化を防止するために、この金属部分に第2のNiめっき被膜と、更に第2のNiめっき被膜の上面にAuめっき被膜を形成している。   The electronic component element storage package is formed by the upper surface of the ceramic base and the inner peripheral side wall of the annular metal frame or the upper surface of the ceramic base and the inner peripheral side wall of the ceramic frame and the annular metal frame. After the electronic component element is mounted in the cavity portion, even if the metal lid is joined to the upper surface of the annular metal frame by seam welding, it is used as a package with high hermetic reliability. Since such an electronic component element storage package is required to be inexpensive, conventionally, an electronic component element storage package in a single piece is arranged in the mother board so as to be adjacent in the vertical and horizontal directions. Many are formed to streamline the work. And, on the mother board, usually after pressing the pressing grooves in which a large number of individual pieces are arranged in the vertical and horizontal directions in the laminated body of a plurality of large ceramic green sheets before firing are provided and fired. Divided grooves that can be divided into individual pieces are formed, and each of the divided grooves is used to form an inexpensive individual-piece electronic component element storage package having a predetermined size. In addition, an annular metal frame is brazed with AgCu on the Ni plating film, and the mother substrate before being divided by the dividing groove is formed on the metal portion in order to prevent oxidation of the metal portion exposed to the outside air. An Au plating film is formed on the upper surface of the second Ni plating film and the second Ni plating film.

上記の電子部品素子収納用パッケージは、母基板に縦、横方向に分割溝を挟んで隣接して配列するように形成されるので、分割溝で確実に分割されて個片体にすることが必要となっている。また、上記の電子部品素子収納用パッケージは、小型化によって、金属製蓋体をシーム溶接させて電子部品素子を中空状態で気密に封止のに必要な環状金属枠体を接合させるための環状メタライズ膜のシールパス幅が狭くなるので、個片体の外形となる分割溝からの環状メタライズ膜の引き下がり部分を設けることが難しくなっている。そこで、母基板には、隣接する焼成前の個片体の間の位置に、セラミックグリーンシートの積層体に設けられた環状メタライズ印刷膜の上面から押圧刃で押圧させて押圧溝を設け、焼成して、Niめっき被膜を形成した後に個片体に分割できるようにした分割溝を設けている。   Since the electronic component element storage package is formed so as to be arranged adjacent to each other with the dividing grooves in the vertical and horizontal directions on the mother board, it can be surely divided into divided pieces by the dividing grooves. It is necessary. In addition, the electronic component element storage package described above has an annular shape for seam welding a metal lid and joining an annular metal frame necessary for hermetically sealing the electronic component element in a hollow state by downsizing. Since the seal path width of the metallized film is narrowed, it is difficult to provide a portion where the annular metallized film is pulled down from the dividing groove which is the outer shape of the individual piece. Therefore, the mother substrate is provided with a pressing groove by pressing with a pressing blade from the upper surface of the annular metallized printed film provided in the ceramic green sheet laminate at a position between adjacent pieces before firing. Thus, a dividing groove is provided so that it can be divided into individual pieces after the Ni plating film is formed.

しかしながら、上記の従来の電子部品素子収納用パッケージは、環状金属枠体を0.3μm以上の厚みのあるNiめっき被膜を施した環状メタライズ膜に接合させるためのAgCuろう材の濡れ性がよく、環状メタライズ膜の端部まで延設してAgCuろうメニスカスを形成するので、接合時の熱応力で環状メタライズ膜の端部がセラミック基体や、セラミック枠体から剥離するという問題が発生し、電子部品素子を収納するパッケージとしての気密信頼性の低下をきたしている。   However, the above-described conventional electronic component element storage package has good wettability of the AgCu brazing material for joining the annular metal frame to the annular metallized film with the Ni plating film having a thickness of 0.3 μm or more, Since an AgCu brazing meniscus is formed by extending to the end of the annular metallized film, there is a problem that the end of the annular metallized film is peeled off from the ceramic substrate or the ceramic frame due to thermal stress during bonding. The airtight reliability as a package for housing the element is lowered.

そこで、熱応力での環状メタライズ膜の剥離を防止できるとして、従来の電子部品素子収納用パッケージには、絶縁基体の表面に設けた環状メタライズ膜に環状金属枠体をろう付けするとともに環状金属枠体に金属製蓋体を取着し、内部に電子部品素子を気密に収容するようになした電子部品素子収納用パッケージであって、環状金属枠体をろう付けするろう材の環状メタライズ膜に対する被着厚みが環状メタライズ膜の外周端からその内側0.3mmの範囲において30.0μm以下としたものが提案されている(例えば、特許文献1参照)。
また、熱応力での環状メタライズ膜の剥離を防止できるとして、従来の電子部品素子収納用パッケージには、上面外周部に枠部を有するセラミック基板と、枠部上面に被着された枠状の環状メタライズ膜と、環状メタライズ膜にろう付けされた環状金属枠体と、環状金属枠体に溶接される金属製蓋体とからなり、内部に電子部品素子を気密に収容する電子部品素子収納用パッケージであって、環状メタライズ膜の外周辺より少なくとも30μmの幅の領域にろう材の非接触領域を形成したものが提案されている(例えば、特許文献2参照)。
Therefore, it is possible to prevent peeling of the annular metallized film due to thermal stress. In the conventional electronic component element storage package, the annular metal frame is brazed to the annular metallized film provided on the surface of the insulating base and the annular metal frame is used. An electronic component element storage package in which a metal lid is attached to a body and an electronic component element is hermetically accommodated therein, and the brazing material for brazing the annular metal frame to the annular metallized film A coating thickness of 30.0 μm or less has been proposed in the range of 0.3 mm inside from the outer peripheral edge of the annular metallized film (see, for example, Patent Document 1).
In addition, since the peeling of the annular metallized film due to thermal stress can be prevented, the conventional electronic component element storage package has a ceramic substrate having a frame portion on the outer periphery of the upper surface and a frame-like shape attached to the upper surface of the frame portion. An electronic component element housing that includes an annular metallized film, an annular metal frame brazed to the annular metallized film, and a metal lid welded to the annular metal frame, and the electronic component element is hermetically accommodated therein. There has been proposed a package in which a non-contact region of a brazing material is formed in a region having a width of at least 30 μm from the outer periphery of the annular metallized film (see, for example, Patent Document 2).

しかしながら、上記のような電子部品素子収納用パッケージは、環状メタライズ膜の面積を大きくして環状メタライズ膜の外周端から所定の幅のろう材の被着厚みを薄くしたり、ろう材の非接触領域を形成したりするので、パッケージの外形寸法が大きくなり、パッケージの小型化に対応できなくなっている。また、ろう材の非接触領域を形成する電子部品素子収納用パッケージは、非接触領域の形成がカーボンインク、アルミナ粉末ペースト等の塗布でのろう材付着防止や、ろう材剥離液での付着したろう材除去によって行われるので、小型化したパッケージには、非常に難しい手間の掛かる作業が必要となり、電子部品素子収納用パッケージ自体のコストアップとなっている。   However, in the electronic component element storage package as described above, the area of the annular metallized film is increased to reduce the thickness of the brazing material having a predetermined width from the outer peripheral end of the annular metallized film, or the non-contact of the brazing material Since the region is formed, the outer dimensions of the package are increased, and the package cannot be made smaller. In addition, in the electronic component element storage package that forms the non-contact area of the brazing material, the non-contact area is prevented from being adhered to the brazing material by applying carbon ink, alumina powder paste, etc. Since the process is performed by removing the brazing material, the miniaturized package requires a very difficult and labor-intensive operation, which increases the cost of the electronic component element storage package itself.

そこで、熱応力での環状メタライズ膜の剥離を防止できると共に、小型化に対応できるとして、従来の電子部品素子収納用パッケージには、複数のセラミック層を積層してなり、上面に電子部品素子を収容するための凹部及びこの凹部を取り囲む略四角枠状の環状メタライズ膜を有する絶縁基体の環状メタライズ膜に略四角枠状の環状金属枠体をろう付けしてなる電子部品素子収納用パッケージであって、絶縁基体はその上面から外周側面にかけて曲率半径が略5〜50μmの丸み部を有しており、環状メタライズ膜はその外周縁が少なくとも丸み部の途中まで延在しているものが提案されている(例えば、特許文献3参照)。   Therefore, it is possible to prevent peeling of the annular metallized film due to thermal stress, and to cope with downsizing, the conventional electronic component element storage package is formed by laminating a plurality of ceramic layers, and the electronic component element is provided on the upper surface. An electronic component element storage package formed by brazing a substantially square frame-shaped annular metal frame to an annular metallized film of an insulating base having a recess for accommodating and a substantially square frame-shaped annular metallized film surrounding the recess. The insulating base has a rounded portion with a radius of curvature of approximately 5 to 50 μm from the upper surface to the outer peripheral side surface, and the annular metallized film has been proposed in which the outer peripheral edge extends at least halfway through the rounded portion. (For example, refer to Patent Document 3).

特開平5−160284号公報JP-A-5-160284 特開平11−126847号公報JP 11-126847 A 特開2002−299520号公報JP 2002-299520 A

しかしながら、前述したような従来の電子部品素子収納用パッケージには、次のような問題がある。   However, the conventional electronic component element storage package as described above has the following problems.

従来の複数の個片体が平面的に縦横方向に隣接して多数個配列する母基板から分割溝で分割されてなる電子部品素子収納用パッケージは、環状金属枠体を0.3μm以上の厚みのあるNiめっき被膜を施した環状メタライズ膜に接合させるためのAgCuろう材の濡れ性がよく、AgCuろう材が環状メタライズ膜の端部まで延設して分割溝部にろう材ブリッジを形成し、分割溝での正常な分割が困難となって、分割後のそれぞれの個片体にカケや、バリや、クラック等を発生させ、電子部品素子を収納して金属製蓋体で気密封止する電子部品素子収納用パッケージが極めて気密信頼性の低いものとなっている。   An electronic component element storage package in which a plurality of conventional individual pieces are divided by dividing grooves from a mother board in which a plurality of pieces are arranged adjacent to each other in a vertical and horizontal direction has a thickness of 0.3 μm or more. The wettability of the AgCu brazing material to be bonded to the annular metallized film coated with a Ni plating film is good, the AgCu brazing material extends to the end of the annular metallized film, and forms a brazing material bridge in the split groove part, It becomes difficult to divide normally in the dividing groove, and each piece after the division is cracked, burred, cracked, etc., and the electronic component element is accommodated and hermetically sealed with a metal lid. Electronic component element storage packages have extremely low airtight reliability.

また、従来の電子部品素子収納用パッケージは、これを実装する装置の小型化によって、環状メタライズ膜のシールパス幅が狭くなっている上に、環状メタライズ膜の上面と、環状金属枠体の下面とが平面同士であるので、その間のろう材溜まりを確保することができなく、環状金属枠体の接合強度が低いと共に、環状金属枠体に金属製蓋体を直接接合させるときの熱応力を吸収させるためのろう材溜まりがなく、環状メタライズ膜のセラミックからの剥離を防止することができなく、電子部品素子を収納して金属製蓋体で気密封止する電子部品素子収納用パッケージが極めて気密信頼性の低いものとなっている。   In addition, the conventional electronic component element storage package has a narrow seal path width of the annular metallized film due to downsizing of the device for mounting the device, and further includes an upper surface of the annular metallized film and a lower surface of the annular metal frame. Because of the flat surfaces, it is not possible to secure a brazing material pool between them, the bonding strength of the annular metal frame is low, and the thermal stress when the metal lid is directly bonded to the annular metal frame is absorbed. There is no brazing material reservoir to prevent the peeling of the annular metallized film from the ceramic, and the electronic component element storage package that stores the electronic component element and hermetically seals with a metal lid is extremely airtight. The reliability is low.

更に、近年の電子部品素子収納用パッケージは、これを実装する装置の小型化に加え、装置の薄型化によって、電子部品素子収納用パッケージの薄型化が求められていることから、分割溝の深さが浅くなっており、環状金属枠体を0.3μm以上の厚みのあるNiめっき被膜を施した環状メタライズ膜に接合させるためのAgCuろう材の濡れ広がりで、容易に分割溝部にろう材ブリッジを形成し、分割溝での正常な分割が困難となって、分割後のそれぞれの個片体にカケや、バリや、クラック等を発生させ、極めて気密信頼性の低い電子部品素子収納用パッケージとなっている。   Furthermore, in recent electronic component element storage packages, in addition to downsizing the device for mounting the electronic component element storage package, the electronic component element storage package is required to be reduced in thickness by reducing the thickness of the device. The brazing material bridge is easily formed in the split groove by spreading the AgCu brazing material to join the annular metal frame to the annular metallized film with a thickness of 0.3 μm or more. This makes it difficult to perform normal division in the dividing groove, and causes chipping, burrs, cracks, etc. in the individual pieces after the division, and an electronic component element storage package with extremely low airtight reliability It has become.

特開2002−299520号公報で開示されるような電子部品素子収納用パッケージは、複数の個片体が平面的に縦横方向に隣接して多数個配列する母基板のそれぞれの個片体を区分する分割溝の丸み部に環状金属枠体接合時の溶融したAgCuろう材が流れ込み、分割溝を塞ぐようにしてろう材ブリッジを形成することとなり、分割溝での正常な分割が困難となって、分割後のそれぞれの個片体にカケや、バリや、クラック等を発生させ、電子部品素子を収納して金属製蓋体で気密封止する電子部品素子収納用パッケージが極めて気密信頼性の低いものとなっている。   An electronic component element storage package as disclosed in Japanese Patent Application Laid-Open No. 2002-299520 divides each piece of a mother board in which a plurality of pieces are arranged adjacent to each other in the vertical and horizontal directions in a plane. The molten AgCu brazing material at the time of joining the annular metal frame flows into the round part of the dividing groove to form a brazing material bridge so as to close the dividing groove, and normal division in the dividing groove becomes difficult. An electronic component element storage package that generates burrs, burrs, cracks, etc. in each individual piece after the division, and stores the electronic component element and hermetically seals with a metal lid, is extremely airtight and reliable. It is low.

本発明は、かかる事情に鑑みてなされたものであって、複数の個片体が平面的に縦横方向に隣接して多数個配列する母基板から分割溝で分割されてなる個片体に欠けや、バリの発生を防止すると共に、環状金属枠体の接合強度が高く、小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することを目的とする。   The present invention has been made in view of such circumstances, and lacks an individual piece formed by dividing a plurality of individual pieces in a dividing groove from a mother board in which a plurality of pieces are arranged adjacent to each other in the vertical and horizontal directions. Another object of the present invention is to provide an electronic component element storage package that prevents the occurrence of burrs, has a high bonding strength of an annular metal frame, is small, and has excellent airtight reliability.

前記目的に沿う本発明に係る電子部品素子収納用パッケージは、平板状のセラミック基体と、セラミック基体の外周縁を含む上面外周部にW、又はMoの高融点金属からなる環状メタライズ膜と、環状メタライズ膜上面に部分的に突出する高融点金属からなる突起状メタライズ膜と、突起状メタライズ膜を含む環状メタライズ膜の上面にNiめっき被膜と、Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、AgCuろうで覆われる部分のNiめっき被膜の厚みが0.3μmを下まわると共に、AgCuろうのセラミック基体の外周縁からの引き下がり幅aと、セラミック基体の外周側上面と環状金属枠体の外周側壁面との間に形成されるAgCuろうメニスカスのセラミック基体上面のろう流れ幅bとの間のろう流れ幅bの割合(/a+b)×100が0%以からなる。 An electronic component element storage package according to the present invention that meets the above-described object includes a flat ceramic substrate, an annular metallized film made of a refractory metal of W or Mo on the outer periphery of the upper surface including the outer periphery of the ceramic substrate, and an annular A protruding metallized film made of a refractory metal partially projecting from the upper surface of the metallized film, an Ni plated film on the upper surface of the annular metallized film including the projected metallized film, and brazed with AgCu brazing on the upper surface of the Ni plated film The thickness of the Ni plating film in the portion covered with the AgCu brazing is less than 0.3 μm, the pull-down width a of the AgCu brazing from the outer peripheral edge of the ceramic base, and the outer peripheral side of the ceramic base top and of the ceramic base upper surface of the AgCu brazing meniscus formed between the outer peripheral side wall surface of the annular metal frame between the brazing flow width b Cormorants ratio of the flow width b (b / a + b) × 100 consists of 6 0% or less.

前記目的に沿う本発明に係る他の電子部品素子収納用パッケージは、平板状のセラミック基体と、セラミック基体の上面外周部に積層する窓枠状のセラミック枠体と、セラミック枠体の外周縁を含む上面全面にW、又はMoの高融点金属からなる環状メタライズ膜と、環状メタライズ膜上面に部分的に突出する高融点金属からなる突起状メタライズ膜と、突起状メタライズ膜を含む環状メタライズ膜の上面にNiめっき被膜と、Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、AgCuろうで覆われる部分のNiめっき被膜の厚みが0.3μmを下まわると共に、AgCuろうのセラミック枠体の外周縁からの引き下がり幅aと、セラミック枠体の外周側上面と環状金属枠体の外周側壁面との間に形成されるAgCuろうメニスカスのセラミック枠体上面のろう流れ幅bとの間のろう流れ幅bの割合(/a+b)×100が0%以からなる。 Another electronic component element storage package according to the present invention that meets the above-described object includes a flat ceramic substrate, a window frame ceramic frame laminated on the outer peripheral portion of the upper surface of the ceramic substrate, and an outer periphery of the ceramic frame. An annular metallized film made of a refractory metal of W or Mo on the entire upper surface, a projecting metallized film made of a refractory metal partially projecting on the upper surface of the annular metallized film, and an annular metallized film comprising a projecting metallized film The upper surface of the Ni plating film and the upper surface of the Ni plating film have an annular metal frame that is brazed with AgCu brazing, and the thickness of the Ni plating film in the portion covered with AgCu brazing is less than 0.3 μm, It is formed between the pull-down width a from the outer peripheral edge of the ceramic frame of AgCu brazing, and the outer peripheral side upper surface of the ceramic frame and the outer peripheral side wall surface of the annular metal frame. gCu proportion of wax flow width b between the wax meniscus wax flow width b of the insulating wall upper surface of (b / a + b) × 100 consists of 6 0% or less.

上記の電子部品素子収納用パッケージは、平板状のセラミック基体と、セラミック基体の外周縁を含む上面外周部にW、又はMoの高融点金属からなる環状メタライズ膜と、環状メタライズ膜上面に部分的に突出する高融点金属からなる突起状メタライズ膜と、突起状メタライズ膜を含む環状メタライズ膜の上面にNiめっき被膜と、Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、AgCuろうで覆われる部分のNiめっき被膜の厚みが0.3μmを下まわると共に、AgCuろうのセラミック基体の外周縁からの引き下がり幅aと、セラミック基体の外周側上面と環状金属枠体の外周側壁面との間に形成されるAgCuろうメニスカスのセラミック基体上面のろう流れ幅bとの間のろう流れ幅bの割合(/a+b)×100が0%以からなるので、厚みが0.3μmを下まわるNiめっき被膜によって、AgCuろうの濡れ性が抑制され、AgCuろうメニスカスの先端であるAgCuろうのセラミック基体の外周縁からの引き下がり幅aが、セラミック基体の外周縁から環状金属枠体の壁面までの距離(a+b)に対して40%以上にでき、複数の個片体が平面的に縦横方向に分割溝を介して隣接して多数個配列する母基板の個片体間の分割溝に形成されるろう材ブリッジを防止して、母基板から分割溝で分割されてなる個片体に欠けや、バリの発生を防止できると共に、Niめっき被膜が施された突起状メタライズ膜を含む環状メタライズ膜の上面の突起状メタライズ膜と当接する環状金属枠体との間にろう材溜まりを設けて環状金属枠体を強固に接合できる小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することができる。また、この電子部品素子収納用パッケージは、金属製蓋体をシーム溶接で直接接合させるときの熱応力をろう材溜まりで緩和させ、環状メタライズ膜のセラミック基体からの剥離の発生を回避させることができる小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することができる。 The electronic component element storage package includes a flat ceramic substrate, an annular metallized film made of a refractory metal of W or Mo on the outer peripheral surface of the upper surface including the outer peripheral edge of the ceramic substrate, and a partial upper surface of the annular metallized film. A projecting metallized film made of a refractory metal projecting on the surface, an Ni plating film on the upper surface of the annular metallized film including the projecting metallized film, and an annular metal frame that is brazed and joined to the upper surface of the Ni plating film with AgCu brazing. The thickness of the Ni plating film of the portion covered with the AgCu brazing is less than 0.3 μm, the pull-down width a of the AgCu brazing from the outer peripheral edge of the ceramic base, the outer peripheral side upper surface of the ceramic base, and the annular metal frame the proportion of wax flow width b between the brazing flow width b of the ceramic substrate upper surface of the AgCu brazing meniscus formed between the outer peripheral side wall surface of ( / A + b) because × 100 consists of 6 0% or less, by Ni plating film thickness is below the 0.3 [mu] m, is suppressed wettability AgCu wax, AgCu wax of the ceramic substrate is the tip of the AgCu brazing meniscus The pulling-down width a from the outer peripheral edge can be 40% or more with respect to the distance (a + b) from the outer peripheral edge of the ceramic base to the wall surface of the annular metal frame. This prevents brazing material bridges formed in the split grooves between the mother board pieces that are arranged in large numbers adjacent to each other. In addition, the brazing material reservoir is provided between the annular metallized film on the upper surface of the annular metallized film including the projective metallized film coated with the Ni plating film and the annular gold frame is provided. It is possible to provide an electronic component element storing package having excellent airtightness reliability compact can be firmly bonded to the frame. In addition, this electronic component element storage package can relieve the thermal stress when the metal lid is directly joined by seam welding by the brazing material reservoir, and avoid the occurrence of peeling of the annular metallized film from the ceramic substrate. It is possible to provide an electronic component element storage package that is small and excellent in airtight reliability.

上記の他の電子部品素子収納用パッケージは、平板状のセラミック基体と、セラミック基体の上面外周部に積層する窓枠状のセラミック枠体と、セラミック枠体の外周縁を含む上面全面にW、又はMoの高融点金属からなる環状メタライズ膜と、環状メタライズ膜上面に部分的に突出する高融点金属からなる突起状メタライズ膜と、突起状メタライズ膜を含む環状メタライズ膜の上面にNiめっき被膜と、Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、AgCuろうで覆われる部分のNiめっき被膜の厚みが0.3μmを下まわると共に、AgCuろうのセラミック枠体の外周縁からの引き下がり幅aと、セラミック枠体の外周側上面と環状金属枠体の外周側壁面との間に形成されるAgCuろうメニスカスのセラミック枠体上面のろう流れ幅bとの間のろう流れ幅bの割合(/a+b)×100が0%以からなるので、厚みが0.3μmを下まわるNiめっき被膜によって、AgCuろうの濡れ性が抑制され、AgCuろうメニスカスの先端であるAgCuろうのセラミック枠体の外周縁からの引き下がり幅aが、セラミック枠体の外周縁から環状金属枠体の壁面までの距離(a+b)に対して40%以上にでき、複数の個片体が平面的に縦横方向に分割溝を介して隣接して多数個配列する母基板の個片体間の分割溝に形成されるろう材ブリッジを防止して、母基板から分割溝で分割されてなる個片体に欠けや、バリの発生を防止できると共に、Niめっき被膜が施された突起状メタライズ膜を含む環状メタライズ膜の上面の突起状メタライズ膜と当接する環状金属枠体との間にろう材溜まりを設けて環状金属枠体を強固に接合できる小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することができる。また、この電子部品素子収納用パッケージは、金属製蓋体をシーム溶接で直接接合させるときの熱応力をろう材溜まりで緩和させ、環状メタライズ膜のセラミック枠体からの剥離の発生を回避させることができる小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することができる。しかも、この電子部品素子収納用パッケージは、セラミック基体と、セラミック枠体の接合体によって、比較的キャビティ部を深くできる小型で気密信頼性に優れる電子部品素子収納用パッケージを提供することができる。 The other electronic component element storage package includes a flat ceramic base, a window frame-shaped ceramic frame laminated on the outer peripheral portion of the upper surface of the ceramic base, and a W on the entire upper surface including the outer peripheral edge of the ceramic frame. Or an annular metallized film made of a refractory metal of Mo, a projecting metallized film made of a refractory metal partially protruding on the upper surface of the annular metallized film, and a Ni plating film on the upper surface of the annular metallized film including the projecting metallized film And an Ni-plated coating having an annular metal frame brazed with AgCu brazing, the Ni-plated coating thickness of the portion covered with AgCu brazing being less than 0.3 μm, and an AgCu brazing ceramic frame Width Cu from the outer peripheral edge of the steel, and the AgCu brazing meniscus formed between the outer peripheral side upper surface of the ceramic frame and the outer peripheral side wall surface of the annular metal frame The ratio of the wax flow width b between the brazing flow width b of the insulating wall upper surface (b / a + b) × 100 consists of 6 0% or less, by Ni plating film thickness is below the 0.3 [mu] m, The wettability of the AgCu brazing is suppressed, and the pulling-down width a from the outer peripheral edge of the ceramic frame of the AgCu brazing that is the tip of the AgCu brazing meniscus is the distance (a + b) from the outer peripheral edge of the ceramic frame to the wall surface of the annular metal frame. ) And a brazing material formed in the divided grooves between the individual pieces of the mother board in which a plurality of pieces are arranged adjacently via the dividing grooves in the vertical and horizontal directions in a plane. It is possible to prevent bridging and to prevent chipping and burrs from occurring on individual pieces divided by dividing grooves from the mother substrate, and at the top surface of the annular metallized film including the protruding metallized film coated with Ni plating film. Protruding meta It is possible to provide a size layer and the electronic component element storing package having excellent airtightness reliability compact can be firmly bonded to the annular metal frame body provided with a reservoir brazing material between the abutting annular metal frame. In addition, this electronic component element storage package relieves the thermal stress caused by the brazing material reservoir when the metal lid is directly joined by seam welding, and avoids the occurrence of peeling of the annular metallized film from the ceramic frame. Therefore, it is possible to provide an electronic component element storage package that is small in size and excellent in airtight reliability. Moreover, this electronic component element storage package can provide a small electronic package with excellent airtight reliability that can make the cavity portion relatively deep by the joined body of the ceramic base and the ceramic frame.

(A)、(B)はそれぞれ本発明の一実施の形態に係る電子部品素子収納用パッケージの断面視する説明図、A部拡大縦断面図である。(A), (B) is explanatory drawing which carries out the cross sectional view of the electronic component element storage package which concerns on one embodiment of this invention, respectively, and A section expanded vertical sectional drawing. (A)、(B)はそれぞれ本発明の一実施の形態に係る他の電子部品素子収納用パッケージの断面視する説明図、B部拡大縦断面図である。(A), (B) is the explanatory view which carries out the cross sectional view of the other electronic component element storage package which concerns on one embodiment of this invention, respectively, and B section expansion longitudinal cross-sectional view. (A)〜(C)はそれぞれ本発明の一実施の形態に係る電子部品素子収納用パッケージ、他の電子部品素子収納用パッケージを形成するための母基板の平面図、A−A’線拡大縦断面図である。(A)-(C) are each the top view of the motherboard for forming the electronic component element storage package which concerns on one embodiment of this invention, and another electronic component element storage package, AA 'line expansion It is a longitudinal cross-sectional view.

続いて、添付した図面を参照しつつ、本発明を具体化した実施するための形態について説明し、本発明の理解に供する。
図1(A)、(B)に示すように、本発明の一実施の形態に係る電子部品素子収納用パッケージ10は、気密信頼性の高い平面視して略矩形状の1枚、又は複数枚のセラミック基板からなる平板状のセラミック基体11を有している。このセラミック基体11は、特に、その材料を限定するものではないが、アルミナ(Al)や、窒化アルミニウム(AlN)等の絶縁性や、電気的特性に優れるセラミックを用いている。
Next, with reference to the accompanying drawings, embodiments for embodying the present invention will be described for understanding of the present invention.
As shown in FIGS. 1A and 1B, an electronic component element storage package 10 according to an embodiment of the present invention includes one or a plurality of substantially rectangular shapes in plan view with high hermetic reliability. A flat ceramic substrate 11 made of a single ceramic substrate is provided. The ceramic substrate 11 is not particularly limited in its material, but a ceramic having excellent insulating properties and electrical characteristics such as alumina (Al 2 O 3 ) and aluminum nitride (AlN) is used.

上記の電子部品素子収納用パッケージ10は、セラミック基体11の外周縁を含む上面外周部に窓枠形状からなる環状メタライズ膜12を有している。この環状メタライズ膜12は、焼成前のセラミック基板であるセラミックグリーンシートにスクリーン印刷で形成した環状メタライズ印刷膜が還元性雰囲気中でセラミックグリーンシートと同時焼成が可能なタングステン(W)、又はモリブデン(Mo)の高融点金属からなっている。   The electronic component element storage package 10 has an annular metallized film 12 having a window frame shape on the outer periphery of the upper surface including the outer periphery of the ceramic substrate 11. This annular metallized film 12 is made of tungsten (W) or molybdenum (which can be fired simultaneously with a ceramic green sheet in a reducing atmosphere by an annular metallized printed film formed by screen printing on a ceramic green sheet which is a ceramic substrate before firing. Mo) refractory metal.

また、電子部品素子収納用パッケージ10は、環状メタライズ膜12の幅方向の一部分に上面から突出して長さ方向に延設する突起状メタライズ膜13を有している。この突起状メタライズ膜13は、環状メタライズ膜12を構成するために用いられるメタライズ材料と同じ材料であるタングステン、又はモリブデンの高融点金属を用いている。なお、突起状メタライズ膜13は、特に、その形状を限定するものではなく、平面視して、連続する、あるいは断続する直線状や、蛇行状であってよい。   The electronic component element storage package 10 has a protruding metallized film 13 that protrudes from the top surface and extends in the length direction at a part of the annular metallized film 12 in the width direction. The protruding metallized film 13 uses tungsten or molybdenum refractory metal, which is the same material as the metallized material used to form the annular metallized film 12. The shape of the protruding metallized film 13 is not particularly limited, and may be a continuous or intermittent linear shape or a meandering shape in plan view.

電子部品素子収納用パッケージ10は、突起状メタライズ膜13を含む環状メタライズ膜12の上面にNiめっき被膜14を有している。このNiめっき被膜14は、通常、Niめっき液や、NiCoめっき液からなるめっき浴中で通電する電解めっき法や、突起状メタライズ膜13を含む環状メタライズ膜12の上面を活性化させめっき浴中で通電することなくめっき被膜を形成する無電解めっき法で形成している。   The electronic component element storage package 10 has a Ni plating film 14 on the upper surface of the annular metallized film 12 including the protruding metallized film 13. This Ni plating film 14 is usually activated by an electrolytic plating method in which a current is applied in a plating bath made of a Ni plating solution or a NiCo plating solution, or by activating the upper surface of the annular metallized film 12 including the protruding metallized film 13. The electroless plating method is used to form a plating film without energization.

更に、電子部品素子収納用パッケージ10は、Niめっき被膜14の上面にAgCuろうでろう付け接合される環状金属枠体15を有している。この環状金属枠体15は、セラミックと熱膨張係数が近似するKV(Fe−Ni−Co系合金、商品名「Kover(コバール)」)や、42アロイ(Fe−Ni系合金)等の金属板をエッチング加工や、打ち抜き加工等で窓枠状に形成したものを用いている。そして、環状金属枠体15は、Niめっき被膜14で被覆された突起状メタライズ膜13の頂部に、下面が水平になるように溶融ろう材を介して当接させ、Niめっき被膜14で被覆された環状メタライズ膜12の上面との間に溶融ろう材を固化してできるろう材溜まり16を設けると共に、Niめっき被膜14で被覆された環状メタライズ膜12の上面と外周側壁面との間にAgCuろうメニスカス17を設けて、壁面が略垂直になるようにろう付け接合している。なお、環状金属枠体15は、Niめっき被膜14の上面に載置された箔状のAgCuろう材の上面に載置した後、加熱して接合している。あるいは、環状金属枠体15には、予め、箔状のAgCuろう材をクラッドさせておいて、Niめっき被膜14の上面に載置して加熱して接合することもある。   Furthermore, the electronic component element storage package 10 has an annular metal frame 15 that is brazed to the upper surface of the Ni plating film 14 by AgCu brazing. The annular metal frame 15 is made of a metal plate such as KV (Fe—Ni—Co alloy, trade name “Kover”) or 42 alloy (Fe—Ni alloy) whose thermal expansion coefficient is close to that of ceramic. Is formed into a window frame shape by etching or punching. Then, the annular metal frame 15 is brought into contact with the top of the protruding metallized film 13 covered with the Ni plating film 14 via a molten brazing material so that the lower surface is horizontal, and is covered with the Ni plating film 14. A brazing material reservoir 16 formed by solidifying the molten brazing material is provided between the upper surface of the annular metallized film 12 and AgCu between the upper surface of the annular metallized film 12 coated with the Ni plating film 14 and the outer peripheral side wall surface. A brazing meniscus 17 is provided and brazed so that the wall surfaces are substantially vertical. The annular metal frame 15 is placed on the upper surface of the foil-like AgCu brazing material placed on the upper surface of the Ni plating film 14 and then heated and joined. Alternatively, the annular metal frame 15 may be clad with a foil-like AgCu brazing material in advance and placed on the upper surface of the Ni plating film 14 and heated to be joined.

上記の電子部品素子収納用パッケージ10は、AgCuろうで覆われる部分のNiめっき被膜14の厚みが0.3μmを下まわるようになっている。これと共に、この電子部品素子収納用パッケージ10は、AgCuろうのセラミック基体11の外周縁からの引き下がり幅aと、セラミック基体11の外周側上面と環状金属枠体15の外周側壁面との間に弓なり形状に形成されるAgCuろうメニスカス17のセラミック基体11上面のろう流れ幅bとの間の引き下がり幅aの割合、即ち(a/a+b)×100が40%以上からなっている。本発明者は、鋭意研究の結果、Niめっき被膜14が施された環状メタライズ膜12上を濡れ広がるAgCuろうのAgCuろうメニスカス17のろう流れ幅bがNiめっき被膜14の厚みによって異なり、Niめっき被膜14の厚みが厚いほど、ろう流れ幅bが大きくなることを見極めた。これに伴い、AgCuろうメニスカス17のセラミック基体11の外周縁からの引き下がり幅aの環状金属枠体15の外周側壁面からセラミック基体11の外周縁までの距離に対する割合は、AgCuろうで覆われる部分のNiめっき被膜14の厚みを0.3μmを下まわるようにすることで40%以上を確保できることを突き止めた。   In the electronic component element storage package 10 described above, the thickness of the Ni plating film 14 covered with the AgCu brazing is less than 0.3 μm. At the same time, the electronic component element storage package 10 includes a pull-down width a of the AgCu braze from the outer peripheral edge of the ceramic base 11 and the outer peripheral side upper surface of the ceramic base 11 and the outer peripheral side wall of the annular metal frame 15. The ratio of the pulling-down width a between the upper surface of the ceramic base 11 of the AgCu brazing meniscus 17 formed in a bow shape and the brazing flow width b, that is, (a / a + b) × 100 is 40% or more. As a result of diligent research, the present inventor has found that the brazing flow width b of the AgCu brazing meniscus 17 of the AgCu brazing spreading on the annular metallized film 12 to which the Ni plating coating 14 has been applied varies depending on the thickness of the Ni plating coating 14. It was determined that the brazing flow width b increases as the thickness of the coating 14 increases. Accordingly, the ratio of the pull-down width a of the AgCu brazing meniscus 17 from the outer peripheral edge of the ceramic base 11 to the distance from the outer peripheral side wall surface of the annular metal frame 15 to the outer peripheral edge of the ceramic base 11 is a portion covered with the AgCu solder. It was ascertained that 40% or more can be secured by making the thickness of the Ni plating film 14 below 0.3 μm.

次いで、図2(A)、(B)を参照しながら、本発明の一実施の形態に係る他の電子部品素子収納用パッケージを説明する。
図2(A)、(B)に示すように、本発明の一実施の形態に係る他の電子部品素子収納用パッケージ10aは、気密信頼性の高い平面視して略矩形状の1枚、又は複数枚のセラミック基板からなる平板状のセラミック基体11と、このセラミック基体11の上面外周部に積層する上記のセラミック基体11と同じセラミックからなる窓枠状のセラミック枠体11aを有している。このセラミック基体11及びセラミック枠体11aは、上記の電子部品素子収納用パッケージ10の場合のセラミック基体11と同様に、特に、その材料を限定するものではないが、アルミナ(Al)や、窒化アルミニウム(AlN)等の絶縁性や、電気的特性に優れるセラミックを用いている。
Next, another electronic component element storage package according to an embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 2A and 2B, another electronic component element storage package 10a according to an embodiment of the present invention includes a single sheet having a substantially rectangular shape in plan view with high hermetic reliability. Or it has the plate-shaped ceramic base | substrate 11 which consists of several ceramic substrates, and the window frame-shaped ceramic frame 11a which consists of the same ceramic as said ceramic base | substrate 11 laminated | stacked on the upper surface outer periphery of this ceramic base | substrate 11. . The ceramic base body 11 and the ceramic frame body 11a are not particularly limited in material as in the case of the ceramic base body 11 in the case of the electronic component element storage package 10 described above, but alumina (Al 2 O 3 ), Further, ceramics having excellent insulating properties and electrical characteristics such as aluminum nitride (AlN) are used.

電子部品素子収納用パッケージ10aは、セラミック枠体11aの外周縁を含む上面全面に環状メタライズ膜12を有している。この環状メタライズ膜12は、焼成前のセラミック枠体であるセラミックグリーンシートにスクリーン印刷で形成した環状メタライズ印刷膜が還元性雰囲気中でセラミックグリーンシートと同時焼成が可能なタングステン(W)、又はモリブデン(Mo)の高融点金属からなっている。   The electronic component element storage package 10a has an annular metallized film 12 on the entire upper surface including the outer peripheral edge of the ceramic frame 11a. This annular metallized film 12 is made of tungsten (W) or molybdenum that can be fired simultaneously with the ceramic green sheet in a reducing atmosphere by the annular metallized printed film formed by screen printing on the ceramic green sheet that is the ceramic frame before firing. (Mo) refractory metal.

また、電子部品素子収納用パッケージ10aは、電子部品素子収納用パッケージ10と同様に、環状メタライズ膜12の幅方向の一部分に上面から突出して長さ方向に延設する突起状メタライズ膜13を有している。この突起状メタライズ膜13は、環状メタライズ膜12を構成するために用いられるメタライズ材料と同じ材料であるタングステン、又はモリブデンの高融点金属を用いている。なお、突起状メタライズ膜13は、特に、その形状を限定するものではなく、平面視して、連続する、あるいは断続する直線状や、蛇行状であってよい。   Similarly to the electronic component element storage package 10, the electronic component element storage package 10 a has a protruding metallized film 13 that protrudes from the upper surface and extends in the length direction at a part of the annular metallized film 12 in the width direction. doing. The protruding metallized film 13 uses tungsten or molybdenum refractory metal, which is the same material as the metallized material used to form the annular metallized film 12. The shape of the protruding metallized film 13 is not particularly limited, and may be a continuous or intermittent linear shape or a meandering shape in plan view.

電子部品素子収納用パッケージ10aは、電子部品素子収納用パッケージ10と同様に、突起状メタライズ膜13を含む環状メタライズ膜12の上面にNiめっき被膜14を有している。このNiめっき被膜14は、通常、Niめっき液や、NiCoめっき液からなるめっき浴中で通電してめっき被膜を形成する電解めっき法や、めっき浴中で通電することなくめっき被膜を形成する無電解めっき法で形成している。   Similar to the electronic component element storage package 10, the electronic component element storage package 10 a has a Ni plating film 14 on the upper surface of the annular metallized film 12 including the protruding metallized film 13. This Ni plating film 14 is usually an electroplating method in which a plating film is formed by energization in a plating bath made of Ni plating solution or NiCo plating solution, or no plating film is formed without energization in the plating bath. It is formed by electrolytic plating.

更に、電子部品素子収納用パッケージ10aは、電子部品素子収納用パッケージ10と同様に、Niめっき被膜14の上面にAgCuろうでろう付け接合される環状金属枠体15を有している。この環状金属枠体15は、セラミックと熱膨張係数が近似するKV(Fe−Ni−Co系合金、商品名「Kover(コバール)」)や、42アロイ(Fe−Ni系合金)等の金属板をエッチング加工や、打ち抜き加工等で窓枠状に形成したものを用いている。そして、環状金属枠体15は、Niめっき被膜14で被覆された突起状メタライズ膜13の頂部に、下面が水平になるように溶融ろう材を介して当接させ、Niめっき被膜14で被覆された環状メタライズ膜12の上面との間に溶融ろう材を固化してできるろう材溜まり16を設けると共に、Niめっき被膜14で被覆された環状メタライズ膜12の上面と外周側壁面との間にAgCuろうメニスカス17を設けて、壁面が略垂直になるようにろう付け接合されている。なお、環状金属枠体15は、Niめっき被膜14の上面に載置された箔状のAgCuろう材の上面に載置した後、加熱して接合している。あるいは、環状金属枠体15には、予め、箔状のAgCuろう材をクラッドさせておいて、Niめっき被膜14の上面に載置して加熱して接合することもある。   Furthermore, the electronic component element storage package 10 a has an annular metal frame 15 that is brazed and joined to the upper surface of the Ni plating film 14 by AgCu brazing, similarly to the electronic component element storage package 10. The annular metal frame 15 is made of a metal plate such as KV (Fe—Ni—Co alloy, trade name “Kover”) or 42 alloy (Fe—Ni alloy) whose thermal expansion coefficient is close to that of ceramic. Is formed into a window frame shape by etching or punching. Then, the annular metal frame 15 is brought into contact with the top of the protruding metallized film 13 covered with the Ni plating film 14 via a molten brazing material so that the lower surface is horizontal, and is covered with the Ni plating film 14. A brazing material reservoir 16 formed by solidifying the molten brazing material is provided between the upper surface of the annular metallized film 12 and AgCu between the upper surface of the annular metallized film 12 coated with the Ni plating film 14 and the outer peripheral side wall surface. A brazing meniscus 17 is provided and brazed so that the wall surfaces are substantially vertical. The annular metal frame 15 is placed on the upper surface of the foil-like AgCu brazing material placed on the upper surface of the Ni plating film 14 and then heated and joined. Alternatively, the annular metal frame 15 may be clad with a foil-like AgCu brazing material in advance and placed on the upper surface of the Ni plating film 14 and heated to be joined.

上記の電子部品素子収納用パッケージ10aは、電子部品素子収納用パッケージ10と同様に、AgCuろうで覆われる部分のNiめっき被膜14の厚みが0.3μmを下まわるようになっている。これと共に、この電子部品素子収納用パッケージ10aは、AgCuろうのセラミック枠体11aの外周縁からの引き下がり幅aと、セラミック枠体11aの外周側上面と環状金属枠体15の外周側壁面との間に弓なり形状に形成されるAgCuろうメニスカス17のセラミック枠体11a上面のろう流れ幅bとの間の引き下がり幅aの割合、即ち(a/a+b)×100が40%以上からなっている。本発明者は、鋭意研究の結果、Niめっき被膜14が施された環状メタライズ膜12上を濡れ広がるAgCuろうのAgCuろうメニスカス17のろう流れ幅bがNiめっき被膜14の厚みによって異なり、Niめっき被膜14の厚みが厚いほど、ろう流れ幅bが大きくなることを見極めた。これに伴い、AgCuろうメニスカス17のセラミック枠体11aの外周縁からの引き下がり幅aの環状金属枠体15の外周側壁面からセラミック枠体11aの外周縁までの距離に対する割合は、AgCuろうで覆われる部分のNiめっき被膜14の厚みを0.3μmを下まわるようにすることで40%以上を確保できることを突き止めた。   In the electronic component element storage package 10a, as in the electronic component element storage package 10, the thickness of the Ni plating film 14 covered with the AgCu brazing is less than 0.3 μm. At the same time, the electronic component element storage package 10a includes a lowering width a of the AgCu braze from the outer peripheral edge of the ceramic frame 11a, an upper surface on the outer peripheral side of the ceramic frame 11a, and an outer peripheral side wall surface of the annular metal frame 15. The ratio of the lowering width a between the upper surface of the ceramic frame 11a of the AgCu brazing meniscus 17 formed in a bow shape and the brazing flow width b, that is, (a / a + b) × 100 is 40% or more. As a result of diligent research, the present inventor has found that the brazing flow width b of the AgCu brazing meniscus 17 of the AgCu brazing spreading on the annular metallized film 12 to which the Ni plating coating 14 has been applied varies depending on the thickness of the Ni plating coating 14. It was determined that the brazing flow width b increases as the thickness of the coating 14 increases. Accordingly, the ratio of the pull-down width a of the AgCu brazing meniscus 17 from the outer peripheral edge of the ceramic frame 11a to the distance from the outer peripheral side wall surface of the annular metal frame 15 to the outer peripheral edge of the ceramic frame 11a is covered with the AgCu brazing. It was ascertained that 40% or more can be secured by making the thickness of the Ni plating film 14 in the portion to be less than 0.3 μm.

なお、上記のこれらの電子部品素子収納用パッケージ10、10aは、特に、環状メタライズ膜12のメタライズ厚みを限定するものではないが、通常、8〜40μm、好ましくは、10〜30μmとなるようにしている。なお、環状メタライズ膜12のメタライズ厚みは、8μmを下まわる場合には、環状メタライズ膜12をセラミック基体11、又はセラミック枠体11aの焼成前のセラミックグリーンシートに埋め込んで強固に接合させるアンカー効果が小さく、Niめっき被膜14が施された突起状メタライズ膜13を含む環状メタライズ膜12の上面に、ろう付け接合する環状金属枠体15に、金属製蓋体(図示せず)を溶接接合させるときの熱応力で環状メタライズ膜12のセラミック基体11、又はセラミック枠体11aからの剥離が発生するようになる。また、環状メタライズ膜12のメタライズ厚みが40μmを超える場合には、この厚みをスクリーン印刷で確保するのに複数回の重ね刷りが必要となり、パターン精度が低下すると共に、電子部品素子収納用パッケージ10、10aのコストアップとなっている。一方、上記の電子部品素子収納用パッケージ10、10aは、特に、突起状メタライズ膜13のメタライズ厚みを限定するものではないが、環状メタライズ膜12と同程度の厚みであれば、Niめっき被膜14が施された突起状メタライズ膜13を含む環状メタライズ膜12の上面にAgCuろうで環状金属枠体15を強固にろう付け接合するためのろう材量からなるろう材溜まり16を確保すると共に、金属製蓋体を溶接接合させるときの熱応力をろう材溜まり16で緩和させ、環状メタライズ膜12のセラミック基体11からの剥離の発生を回避させることができる。   The electronic component element storage packages 10 and 10a are not particularly limited to the metallized thickness of the annular metallized film 12, but are usually 8 to 40 μm, preferably 10 to 30 μm. ing. When the metallized thickness of the annular metallized film 12 is less than 8 μm, there is an anchor effect in which the annular metallized film 12 is embedded in the ceramic green sheet before firing of the ceramic substrate 11 or the ceramic frame 11a and firmly bonded. When a metal lid (not shown) is welded and joined to the annular metal frame 15 to be brazed and joined to the upper surface of the annular metallized film 12 including the protruding metallized film 13 to which the Ni plating film 14 is applied. The cyclic metallized film 12 peels off from the ceramic substrate 11 or the ceramic frame 11a due to the thermal stress. Further, when the metallized thickness of the annular metallized film 12 exceeds 40 μm, multiple overprints are required to secure this thickness by screen printing, the pattern accuracy is lowered, and the electronic component element storage package 10 The cost is increased by 10a. On the other hand, the electronic component element storage packages 10 and 10a do not particularly limit the metallized thickness of the protruding metallized film 13, but if the thickness is similar to the annular metallized film 12, the Ni plating film 14 is used. A brazing material reservoir 16 made of a brazing material amount for firmly brazing and joining the annular metal frame 15 with AgCu brazing is secured to the upper surface of the annular metallizing film 12 including the projecting metallized film 13 to which the metal is applied, and a metal. The thermal stress at the time of welding the lid-making body can be relaxed by the brazing material reservoir 16, and the occurrence of peeling of the annular metallized film 12 from the ceramic substrate 11 can be avoided.

これらの電子部品素子収納用パッケージ10、10aには、環状金属枠体15をAgCuろう付けした後に、分割溝で分割する前の母基板の外気中に露出する金属部分の酸化を防止するために、この金属部分に第2のNiめっき被膜18と、更に第2のNiめっき被膜18の上面にAuめっき被膜19が施されている。従って、電子部品素子収納用パッケージ10、10aは、AgCuろうで覆われる部分以外の環状メタライズ膜12上のNiめっきの被膜厚さがNiめっき被膜14の厚みに、第2のNiめっき被膜18の厚みが加算された厚さとなっている。そして、これらの電子部品素子収納用パッケージ10、10aには、セラミック基体11の上面と、環状金属枠体15の内周側壁面、及び/又はセラミック枠体11aの内周側壁面とで形成されるキャビティ部20に、半導体素子や、水晶振動子や、圧電素子等の電子部品素子21が収納されるようになっている。また、これらの電子部品素子収納用パッケージ10、10aには、キャビティ部20に電子部品素子21が実装された後、環状金属枠体15の上面には、KVや、42アロイ等からなる金属製蓋体がシーム溶接や、レーザ溶接等で直接接合されて電子部品素子21がキャビティ部20内に中空状態で気密に封止されるようになっている。   In these electronic component element storage packages 10 and 10a, after the annular metal frame 15 is brazed with AgCu, the metal portion exposed to the outside air of the mother board before being divided by the dividing groove is prevented from being oxidized. A second Ni plating film 18 is applied to the metal portion, and an Au plating film 19 is applied to the upper surface of the second Ni plating film 18. Accordingly, in the electronic component element storage package 10, 10 a, the Ni plating film thickness on the annular metallized film 12 other than the portion covered with the AgCu solder is set to the thickness of the Ni plating film 14, and the second Ni plating film 18 is formed. The thickness is the sum of the thicknesses. These electronic component element storage packages 10 and 10a are formed by the upper surface of the ceramic base 11, the inner peripheral side wall of the annular metal frame 15, and / or the inner peripheral side wall of the ceramic frame 11a. The cavity part 20 accommodates an electronic component element 21 such as a semiconductor element, a crystal resonator, or a piezoelectric element. Further, in these electronic component element storage packages 10 and 10a, after the electronic component element 21 is mounted in the cavity portion 20, the upper surface of the annular metal frame 15 is made of a metal made of KV, 42 alloy or the like. The lid is directly joined by seam welding, laser welding or the like, and the electronic component element 21 is hermetically sealed in the cavity portion 20 in a hollow state.

電子部品素子21を収納したこれらの電子部品素子収納用パッケージ10、10aは、それぞれ携帯電話等の小型の電子装置に組み込まれて用いられるので、それぞれの電子部品素子収納用パッケージ10、10aには、平面視して略四角形状のパッケージサイズをできるだけ小型化にすると共に、安価にすることが必要となっている。上記の電子部品素子収納用パッケージ10、10aは、小型化に対応するために、例えば、環状金属枠体15の内周側壁面とNiめっき被膜14で被覆された環状メタライズ膜12との間に内周側のAgCuろうメニスカスを設けないようにしたり、小さな内周側のAgCuろうメニスカスにしてキャビティ部20のエリアを確保している。また、上記の電子部品素子収納用パッケージ10、10aは、小型化や、安価に対応するために、それぞれの複数の個片体の電子部品素子収納用パッケージ10、10aが平面的に縦横方向に分割溝31(図3(A)〜(C)参照)を介して多数個が隣接して配列する母基板30、30a(図3(A)〜(C)参照)から分割溝31で分割されて一度に多数個が得られるようにしている。   Since these electronic component element storage packages 10 and 10a storing the electronic component elements 21 are used by being incorporated into small electronic devices such as mobile phones, the electronic component element storage packages 10 and 10a include Therefore, it is necessary to reduce the size of a substantially rectangular package in plan view as much as possible and to reduce the cost. In order to cope with the downsizing of the electronic component element storage packages 10 and 10a, for example, between the inner peripheral side wall surface of the annular metal frame 15 and the annular metallized film 12 covered with the Ni plating film 14. The area of the cavity 20 is secured by avoiding the provision of an inner AgCu solder meniscus or by using a smaller inner AgCu solder meniscus. In addition, the electronic component element storage packages 10 and 10a described above have a plurality of pieces of electronic component element storage packages 10 and 10a that are horizontally and vertically arranged in order to reduce the size and cost. Divided by dividing grooves 31 from mother substrates 30 and 30a (see FIGS. 3A to 3C), in which a large number of them are arranged adjacently via dividing grooves 31 (see FIGS. 3A to 3C). So many can be obtained at once.

ここで、図3(A)〜(C)を参照しながら上記の電子部品素子収納用パッケージ10、10aの母基板30、30aからの製造方法を簡単に説明する。
図3(A)〜(C)に示すように電子部品素子収納用パッケージ10、10aを形成するための母基板30、30aは、これらを形成するためのセラミックグリーンシートのセラミック基材が特に限定されるものではないが、通常、アルミナや、窒化アルミニウム等が用いられている。例えば、セラミック基材にアルミナを用いる場合には、先ず、酸化アルミニウム粉末にマグネシア、シリカ、カルシア等の焼結助剤を適当量加えた粉末に、ジオクチフタレート等の可塑剤と、アクリル樹脂等のバインダー、及びトルエン、キシレン、アルコール類等の溶剤を加え、十分に混練して脱泡し、粘度2000〜40000cpsのスラリーを作製し、ドクターブレード法等によって所望の厚み、例えば、0.25mmのシート状に乾燥させ、所望の大きさの矩形状に切断してセラミックグリーンシートを形成している。そして、これらのセラミックグリーンシートは、図3(B)に示すように、例えば、電子部品素子収納用パッケージ10の場合では、セラミック基体11用の複数枚のセラミックグリーンシートとして用いている。また、これらのセラミックグリーンシートは、図3(C)に示すように、例えば、電子部品素子収納用パッケージ10aの場合では、セラミック基体11用及びセラミック枠体11a用の複数枚のセラミックグリーンシートとしても用いている。
Here, with reference to FIGS. 3A to 3C, a method of manufacturing the electronic component element housing packages 10 and 10a from the mother boards 30 and 30a will be briefly described.
As shown in FIGS. 3 (A) to 3 (C), the mother substrates 30 and 30a for forming the electronic component element housing packages 10 and 10a are particularly limited to the ceramic base material of the ceramic green sheet for forming them. Although not necessarily used, alumina, aluminum nitride, or the like is usually used. For example, when using alumina as the ceramic substrate, first, a powder obtained by adding an appropriate amount of a sintering aid such as magnesia, silica, calcia to aluminum oxide powder, a plasticizer such as dioctiphthalate, an acrylic resin, etc. And a solvent such as toluene, xylene, alcohols, etc. are added, kneaded thoroughly and defoamed to prepare a slurry having a viscosity of 2000 to 40000 cps, and a desired thickness, for example, 0.25 mm, is obtained by a doctor blade method or the like. The ceramic green sheet is formed by drying into a sheet and cutting into a rectangular shape of a desired size. These ceramic green sheets are used as a plurality of ceramic green sheets for the ceramic substrate 11, for example, in the case of the electronic component element storage package 10, as shown in FIG. 3B. Further, as shown in FIG. 3C, these ceramic green sheets are, for example, as a plurality of ceramic green sheets for the ceramic substrate 11 and the ceramic frame 11a in the case of the electronic component element storage package 10a. Is also used.

次に、セラミック基体11用や、セラミック枠体11a用のそれぞれのセラミックグリーンシートには、上下層の配線導体を電気的に導通させるビアや、スルーホール導体を形成するための、あるいは、このセラミック枠体11a用のそれぞれのセラミックグリーンシートには、キャビティ部20を形成するための貫通孔を打ち抜きプレスや、パンチングマシーン等を用いて形成している。そして、貫通孔が形成されたそれぞれのセラミックグリーンシートには、スクリーン印刷機を用いてタングステンや、モリブデン等からなるメタライズペーストで環状メタライズ膜12用や、種々の配線導体パターン用や、ビアや、スルーホール導体用等の導体印刷パターンを形成している。なお、環状メタライズ膜12用の導体印刷パターンは、隣接する個片体用の環状メタライズ膜12が接するようにして形成されている。また、上記のキャビティ部20用の貫通孔は、環状メタライズ膜12用の導体印刷パターンを形成した後に、打ち抜いて形成する場合がある。   Next, in each ceramic green sheet for the ceramic substrate 11 and the ceramic frame 11a, a via for electrically connecting the upper and lower wiring conductors, a through-hole conductor, or this ceramic is formed. In each ceramic green sheet for the frame 11a, a through hole for forming the cavity portion 20 is formed using a punching press, a punching machine, or the like. And each ceramic green sheet in which the through hole is formed is made with a metallizing paste made of tungsten, molybdenum or the like using a screen printing machine for the annular metallized film 12, for various wiring conductor patterns, vias, Conductor printing patterns for through-hole conductors are formed. The conductor print pattern for the annular metallized film 12 is formed so that the adjacent annular metallized films 12 for individual pieces are in contact with each other. Further, the through hole for the cavity portion 20 may be formed by punching after forming the conductor print pattern for the annular metallized film 12.

次に、全てのセラミックグリーンシートは、所定の位置になるように重ね合わせて上、下方向から温度と、圧力を掛けて接着し、積層体を形成している。次に、この積層体には、環状メタライズ膜12用の導体印刷パターンの上方から15〜50°程度の刃先角度、0.2〜0.8mm程度の刃厚の押圧刃を押し当てて分割溝31用の焼成する前の押圧溝を形成している。この押圧刃によって形成される押圧溝は、隣接する個片体用の環状メタライズ膜12用の導体印刷パターンを切断するようにしてセラミックグリーンシートを押し広げて内部にまで入り込んで形成されることで、それぞれの個片体用の環状メタライズ膜12が電気的に絶縁状態になるようにしている。次に、押圧溝を設けた上記の積層体の環状メタライズ膜12用の導体印刷パターン上面には、幅方向の一部分に、突起状メタライズ膜13用の導体印刷パターンを形成した後、積層体を還元雰囲気中でセラミックと導体を同時焼成して環状メタライズ膜12の上面に突起状メタライズ膜13を有する焼成体を形成している。   Next, all the ceramic green sheets are stacked so as to be in a predetermined position, and are bonded by applying temperature and pressure from below to form a laminated body. Next, a pressing blade having a blade edge angle of about 15 to 50 ° and a blade thickness of about 0.2 to 0.8 mm is pressed against the laminated body from above the conductor printing pattern for the annular metallized film 12 to form a dividing groove. A pressing groove before firing for 31 is formed. The pressing groove formed by the pressing blade is formed by expanding the ceramic green sheet and penetrating into the inside so as to cut the conductor printing pattern for the annular metallized film 12 for the adjacent individual piece. The annular metallized films 12 for the individual pieces are electrically insulated. Next, a conductor print pattern for the projecting metallized film 13 is formed on a part of the width direction on the upper surface of the conductor print pattern for the annular metallized film 12 of the laminate provided with the pressing groove, and then the laminate is formed. A fired body having a protruding metallized film 13 on the upper surface of the annular metallized film 12 is formed by simultaneously firing the ceramic and the conductor in a reducing atmosphere.

次に、焼成体の外部に露出する金属部分には、厚みが0.3μmを下まわるNiや、NiCoからなるNiめっき被膜14を形成している。そして、Niめっき被膜14で被覆された突起状メタライズ膜13を含む環状メタライズ膜12の上面には、KVや、42アロイ等の窓枠状金属板からなる環状金属枠体15をAgCuろう等でろう付け接合している。このろう付け接合では、表面にNiめっき被膜14の形成された突起状メタライズ膜13によって、環状金属枠体15の下面が当接すると共に、環状金属枠体15の下面と、表面にNiめっき被膜14の形成された環状メタライズ膜12の上面との間にろう材溜まり16が形成されている。また、このろう付け接合では、厚みが0.3μmを下まわるNiめっき被膜14によって、分割溝31からの引き下がり幅aの割合が分割溝31から環状金属枠体15の外周側壁面までの距離a+bに対して40%以上になるようにAgCuメニスカス17が形成されている。なお、このろう付け接合は、複数の個片体が平面的に縦横方向に分割溝31を介して隣接して多数個配列する母基板30、30aの個片体間の分割溝31に形成されるろう材ブリッジを防止して、母基板30、30aから分割溝31で分割されてなる個片体に欠けや、バリの発生を防止することができる。   Next, a Ni plating film 14 made of Ni or NiCo having a thickness of less than 0.3 μm is formed on the metal portion exposed to the outside of the fired body. On the upper surface of the annular metallized film 12 including the protruding metallized film 13 covered with the Ni plating film 14, an annular metal frame 15 made of a window frame-shaped metal plate such as KV or 42 alloy is formed by AgCu brazing or the like. It is brazed. In this brazing joint, the lower surface of the annular metal frame 15 is brought into contact with the projecting metallized film 13 having the Ni plating film 14 formed on the surface, and the Ni plating film 14 is formed on the lower surface and the surface of the annular metal frame 15. A brazing material reservoir 16 is formed between the upper surface of the annular metallized film 12 having the above structure. In this brazing joint, the Ni plating film 14 having a thickness of less than 0.3 μm causes the ratio of the pull-down width a from the dividing groove 31 to be the distance a + b from the dividing groove 31 to the outer peripheral side wall surface of the annular metal frame 15. The AgCu meniscus 17 is formed so as to be 40% or more of the amount. In addition, this brazing joining is formed in the dividing grooves 31 between the individual pieces of the mother boards 30 and 30a in which a plurality of individual pieces are arranged adjacently via the dividing grooves 31 in the vertical and horizontal directions in a plane. By preventing the brazing material bridge, it is possible to prevent chips and burrs from being generated in the individual pieces divided by the dividing grooves 31 from the mother boards 30 and 30a.

そして、最後に、環状金属枠体15が接合された焼成体の外部に露出する金属部分には、第2のNiめっき被膜18、及び第2のNiめっき被膜18の上面にAuめっき被膜19を形成し、母基板30、30aを形成している。そして、母基板30、30aは、分割溝31が設けられた分割位置で分割することで、欠けや、バリの発生を防止して気密信頼性が高く、小型化で、安価な複数の個片体の電子部品素子収納用パッケージ10、10aが得られるようになっている。また、母基板30、30aは、分割溝31が設けられた分割位置で分割した個片体に金属製蓋体を接合する時の熱応力が、上記の環状金属枠体15のろう付け接合に形成されるろう材溜まり16によって緩和でき、環状金属枠体15の環状メタライズ膜12への接合信頼性を向上させることができると共に、環状メタライズ膜12のセラミックへの接合信頼性を向上させることができるようになっている。   Finally, the second Ni plating film 18 and the Au plating film 19 on the upper surface of the second Ni plating film 18 are formed on the metal portion exposed to the outside of the fired body to which the annular metal frame 15 is bonded. The mother substrates 30 and 30a are formed. The mother substrates 30 and 30a are divided at the dividing positions where the dividing grooves 31 are provided, so that chipping and burrs are prevented and airtight reliability is high. A body electronic component element storage package 10, 10a is obtained. Further, the mother substrate 30, 30 a is subjected to the brazing joint of the annular metal frame 15 due to thermal stress when the metal lid is joined to the individual pieces divided at the division positions where the division grooves 31 are provided. It can be relaxed by the brazing material reservoir 16 to be formed, and the bonding reliability of the annular metal frame 15 to the annular metallized film 12 can be improved, and the bonding reliability of the annular metallized film 12 to the ceramic can be improved. It can be done.

本発明者は、それぞれの個片体の電子部品素子収納用パッケージの外形サイズを2.5mm×2.0mm、環状金属枠体の外形サイズを2.36mm×1.86mmとし、a+bが70μmにできて、小型化に対応できる個片体を配列する母基板で、それぞれの個片体の環状メタライズ膜に施すNiめっき被膜の厚みを0.1μm、0.3μm、0.5μmとする各サンプル10pcを準備した。そして、それぞれの厚みのNiめっき被膜を施した環状メタライズ膜に環状金属枠体をAgCuろう付けし、パッケージ外周縁、すなわち、分割溝からの引き下がり幅aの割合を測定すると共に、分割溝でのAgCuろうブリッジの発生率を測定した。それぞれの結果を表1、表2に示す。   The inventor sets the outer size of each individual electronic component element storage package to 2.5 mm × 2.0 mm, the outer size of the annular metal frame to 2.36 mm × 1.86 mm, and a + b to 70 μm. Each sample is a mother substrate on which individual pieces that can be reduced in size are arranged, and the thickness of the Ni plating film applied to the annular metallized film of each individual piece is 0.1 μm, 0.3 μm, and 0.5 μm 10 pc was prepared. Then, an annular metal frame is plated with AgCu on the annular metallized film with the Ni plating film of each thickness, and the outer peripheral edge of the package, that is, the ratio of the pull-down width a from the divided groove is measured, and the divided groove The incidence of AgCu brazing bridge was measured. The respective results are shown in Tables 1 and 2.

Figure 0006108734
Figure 0006108734

Figure 0006108734
Figure 0006108734

表1に示すように、分割溝からの引き下がり幅aの割合、(a/a+b)×100は、Niめっき被膜の厚みが0.3μmを下まわる場合に40%以上からなることが確認できた。また、表2に示すように、分割溝でのAgCuろうブリッジの発生率は、Niめっき被膜の厚みが0.3μmを下まわる場合に無くなることが確認できた。   As shown in Table 1, it was confirmed that the ratio (a / a + b) × 100 of the pulling-down width a from the dividing groove was 40% or more when the thickness of the Ni plating film was less than 0.3 μm. . Further, as shown in Table 2, it was confirmed that the occurrence rate of the AgCu brazing bridge in the dividing groove disappears when the thickness of the Ni plating film is less than 0.3 μm.

本発明の電子部品素子収納用パッケージは、半導体素子や、水晶振動子や、圧電素子等の電子部品を実装させて、小型で、高信頼性が要求される、例えば、携帯電話や、ノートブック型のパソコン等の電子装置に組み込まれて用いることができる。   The electronic component element storage package of the present invention is mounted with an electronic component such as a semiconductor element, a crystal resonator, or a piezoelectric element, and is small and requires high reliability. For example, a mobile phone or a notebook It can be used by being incorporated in an electronic device such as a personal computer.

10、10a:電子部品素子収納用パッケージ、11:セラミック基体、11a:セラミック枠体、12:環状メタライズ膜、13:突起状メタライズ膜、14:Niめっき被膜、15:環状金属枠体、16:ろう材溜まり、17:AgCuろうメニスカス、18:第2のNiめっき被膜、19:Auめっき被膜、20:キャビティ部、21:電子部品素子、30、30a:母基板、31:分割溝   10, 10a: Electronic component element storage package, 11: Ceramic substrate, 11a: Ceramic frame, 12: Cylindrical metallized film, 13: Projected metallized film, 14: Ni plating film, 15: Cyclic metal frame, 16: Brazing material reservoir, 17: AgCu brazing meniscus, 18: second Ni plating coating, 19: Au plating coating, 20: cavity portion, 21: electronic component element, 30, 30a: mother substrate, 31: dividing groove

Claims (2)

平板状のセラミック基体と、該セラミック基体の外周縁を含む上面外周部にW、又はMoの高融点金属からなる環状メタライズ膜と、該環状メタライズ膜上面に部分的に突出する前記高融点金属からなる突起状メタライズ膜と、該突起状メタライズ膜を含む前記環状メタライズ膜の上面にNiめっき被膜と、該Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、前記AgCuろうで覆われる部分の前記Niめっき被膜の厚みが0.3μmを下まわると共に、前記AgCuろうの前記セラミック基体の外周縁からの引き下がり幅aと、前記セラミック基体の外周側上面と前記環状金属枠体の外周側壁面との間に形成される前記AgCuろうメニスカスの前記セラミック基体上面のろう流れ幅bとの間の前記ろう流れ幅bの割合(/a+b)×100が0%以からなることを特徴とする電子部品素子収納用パッケージ。 A flat ceramic substrate, an annular metallized film made of a refractory metal of W or Mo on the outer peripheral surface of the upper surface including the outer peripheral edge of the ceramic substrate, and the refractory metal partially protruding on the upper surface of the annular metallized film A projecting metallized film, an Ni plating film on the upper surface of the annular metallized film including the projecting metallized film, and an annular metal frame brazed to the upper surface of the Ni plating film by AgCu brazing, The thickness of the Ni plating film in the portion covered with the AgCu brazing is less than 0.3 μm, the pull-down width a of the AgCu brazing from the outer peripheral edge of the ceramic base, the outer peripheral upper surface of the ceramic base, and the annular metal the wax flow between the wax flow width b of the ceramic substrate upper surface of the AgCu brazing meniscus formed between the outer side wall of the frame Electronic component element storing package the ratio of the width b (b / a + b) × 100 is characterized in that it consists of 6 0% or less. 平板状のセラミック基体と、該セラミック基体の上面外周部に積層する窓枠状のセラミック枠体と、該セラミック枠体の外周縁を含む上面全面にW、又はMoの高融点金属からなる環状メタライズ膜と、該環状メタライズ膜上面に部分的に突出する前記高融点金属からなる突起状メタライズ膜と、該突起状メタライズ膜を含む前記環状メタライズ膜の上面にNiめっき被膜と、該Niめっき被膜の上面にAgCuろうでろう付け接合される環状金属枠体を有し、前記AgCuろうで覆われる部分の前記Niめっき被膜の厚みが0.3μmを下まわると共に、前記AgCuろうの前記セラミック枠体の外周縁からの引き下がり幅aと、前記セラミック枠体の外周側上面と前記環状金属枠体の外周側壁面との間に形成される前記AgCuろうメニスカスの前記セラミック枠体上面のろう流れ幅bとの間の前記ろう流れ幅bの割合(/a+b)×100が0%以からなることを特徴とする電子部品素子収納用パッケージ。 An annular metallization made of a refractory metal of W or Mo on a flat ceramic substrate, a window frame-shaped ceramic frame laminated on the outer periphery of the upper surface of the ceramic substrate, and the entire upper surface including the outer periphery of the ceramic frame A projecting metallized film made of the refractory metal partially projecting on the upper surface of the annular metallized film, an Ni plating film on the upper surface of the annular metallized film including the projecting metallized film, and the Ni plated film An annular metal frame that is brazed with AgCu brazing on the upper surface, and the thickness of the Ni plating film in the portion covered with the AgCu brazing is less than 0.3 μm, and the ceramic frame of the AgCu brazing The AgCu brazing member formed between the pull-down width a from the outer peripheral edge, the outer peripheral side upper surface of the ceramic frame and the outer peripheral side wall of the annular metal frame. The wax fraction of the flow width b (b / a + b) electronic component element package for housing × 100 is characterized in that it consists of 6 0% or less between the brazing flow width b of the insulating wall upper surface of the scum.
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