JP2005064488A5 - - Google Patents

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Publication number
JP2005064488A5
JP2005064488A5 JP2004215754A JP2004215754A JP2005064488A5 JP 2005064488 A5 JP2005064488 A5 JP 2005064488A5 JP 2004215754 A JP2004215754 A JP 2004215754A JP 2004215754 A JP2004215754 A JP 2004215754A JP 2005064488 A5 JP2005064488 A5 JP 2005064488A5
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JP
Japan
Prior art keywords
semiconductor film
crystalline semiconductor
ridges
manufacturing
metal element
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JP2004215754A
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English (en)
Japanese (ja)
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JP2005064488A (ja
JP4602023B2 (ja
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Priority to JP2004215754A priority Critical patent/JP4602023B2/ja
Priority claimed from JP2004215754A external-priority patent/JP4602023B2/ja
Publication of JP2005064488A publication Critical patent/JP2005064488A/ja
Publication of JP2005064488A5 publication Critical patent/JP2005064488A5/ja
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Publication of JP4602023B2 publication Critical patent/JP4602023B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2004215754A 2003-07-31 2004-07-23 半導体装置の作製方法 Expired - Fee Related JP4602023B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004215754A JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284462 2003-07-31
JP2004215754A JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005064488A JP2005064488A (ja) 2005-03-10
JP2005064488A5 true JP2005064488A5 (enrdf_load_stackoverflow) 2007-07-12
JP4602023B2 JP4602023B2 (ja) 2010-12-22

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Family Applications (1)

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JP2004215754A Expired - Fee Related JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Country Status (1)

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JP (1) JP4602023B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5063867B2 (ja) * 2005-04-21 2012-10-31 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP2007048772A (ja) * 2005-08-05 2007-02-22 Rohm Co Ltd 有機エレクトロルミネセンス素子
JP5090690B2 (ja) * 2006-08-28 2012-12-05 三菱電機株式会社 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置
WO2008129719A1 (ja) * 2007-04-18 2008-10-30 Mitsubishi Electric Corporation 半導体薄膜の製造方法および半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3471966B2 (ja) * 1995-03-16 2003-12-02 株式会社半導体エネルギー研究所 薄膜半導体装置の作製方法
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JP3389022B2 (ja) * 1996-09-27 2003-03-24 シャープ株式会社 半導体装置
JP5222450B2 (ja) * 2000-09-01 2013-06-26 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP2002270510A (ja) * 2000-12-26 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4827305B2 (ja) * 2001-03-16 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法

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