JP2005057284A - ウェーハ結合およびsimoxプロセスを使用した異なる結晶方位を有する自己整合soi - Google Patents
ウェーハ結合およびsimoxプロセスを使用した異なる結晶方位を有する自己整合soi Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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Abstract
【解決手段】具体的には、第1の結晶方位の上部半導体層と第2の結晶方位の半導体材料とを有するSOI基板を少なくとも含んだ集積回路構造であって、半導体材料は実質的に同一平面上にありかつ上部半導体層と実質的に同じ厚さであり、さらに第1の結晶方位が第2の結晶方位と異なっている集積回路構造が提供される。SOI基板は、ウェーハ結合、イオン打ち込みおよびアニールによって形成される。
【選択図】図9
Description
12 下部半導体層(第2の結晶方位)
14 絶縁層
16 上部半導体層(第1の結晶方位)
18 表面誘電体層
20 パターン・マスク
30 パターン・マスク
22 開口
24 露出側壁
26 スペーサ
28 半導体材料(再成長半導体材料)
36 埋込み絶縁材料
40 分離領域
50 第1の半導体デバイス(pFETまたはnFET)
52 第2の半導体デバイス(nFETまたはpFET)
54 拡散領域
Claims (25)
- 集積回路構造を形成する方法であって、
絶縁層で隔てられた第1の結晶方位の上部半導体層と、前記方位と異なる第2の結晶方位の下部半導体層とを備えるSOI基板を準備するステップと、
前記下部半導体層の表面を露出させる少なくとも1つの開口を前記SOI基板に形成するステップと、
前記下部半導体層の前記露出表面に前記第2の結晶方位と同じ結晶方位を有する半導体材料を成長するステップと、
イオン打ち込みおよびアニールによって埋込み絶縁領域を前記半導体材料中に形成し、前記埋込み絶縁領域が前記半導体材料を前記下部半導体層と隔てるステップと、
前記絶縁領域が埋め込まれた半導体材料を平坦化して、前記第2の結晶方位を有する前記半導体材料が実質的に共面であり、かつ前記上部半導体層と実質的に同じ厚さにするステップとを備える方法。 - 前記SOI基板を準備するステップが、2枚のウェーハを互いに結合するステップを備え、少なくとも1つのウェーハが前記上部半導体層を含み、他方のウェーハが前記下部半導体ウェーハを含む、請求項1に記載の方法。
- 前記SOI基板が、その上に形成された表面誘電体を含む、請求項1に記載の方法。
- 少なくとも1つの開口を形成する前記ステップが、前記SOI基板にパターン・マスクを形成し、エッチングすることを含む、請求項1に記載の方法。
- さらに、前記半導体材料を成長する前記ステップの前に、前記少なくとも1つの開口の露出された側壁にスペーサを形成するステップを備える、請求項1に記載の方法。
- 前記スペーサが、堆積とエッチングで形成される、請求項5に記載の方法。
- 前記半導体材料を成長する前記ステップが、選択エピタキシャル成長プロセスを備える、請求項1に記載の方法。
- 前記イオン打ち込みが、前記半導体材料の中に酸素イオンまたは窒素イオンを打ち込むことを備える、請求項1に記載の方法。
- 前記イオン打ち込みが、ベース・イオン打ち込みステップを備える、請求項1に記載の方法。
- さらに、前記ベース・イオン打ち込みステップの後に、第2のイオン打ち込みステップを備える、請求項9に記載の方法。
- 前記アニールが、酸化環境中で700℃から1400℃の範囲の温度で行われる、請求項1に記載の方法。
- 前記酸化環境が、不活性ガスで希釈された酸素含有ガスを含む、請求項11に記載の方法。
- 前記平坦化するステップが、酸化物が選択的に除去されるエッチング・ステップを含む、請求項1に記載の方法。
- さらに、前記構造に少なくとも1つのpFETおよび少なくとも1つのnFETを形成するステップを備える、請求項1に記載の方法。
- 前記pFETが(110)結晶表面に位置し、一方で、前記nFETが(100)結晶表面に位置する、請求項14に記載の方法。
- 前記上部半導体層が(110)方位の表面を有し、前記半導体材料が(100)方位の表面を有する、請求項1に記載の方法。
- さらに、少なくとも1つのpFETを前記(110)表面に形成し、かつ少なくとも1つのnFETを前記(100)表面に形成するステップを備える、請求項16に記載の方法。
- 第1の結晶方位の上部半導体層と第2の結晶方位の半導体材料とを備えるSOI基板を少なくとも備える集積回路構造であって、前記半導体材料が実質的に共面でかつ前記上部半導体層と実質的に同じ厚さであり、さらに前記第1の結晶方位が前記第2の結晶方位と異なる集積回路構造。
- 前記上部半導体層および前記半導体材料が、絶縁領域で下部半導体層と隔てられている、請求項18に記載の集積回路構造。
- 前記上部半導体層が(110)方位の表面を有し、前記半導体材料が(100)方位の表面を有する、請求項18に記載の集積回路構造。
- さらに、前記(110)方位表面に位置する少なくとも1つのpFET、および前記(100)方位表面に位置する少なくとも1つのnFETを備える、請求項20に記載の集積回路構造。
- 前記上部半導体層が(100)方位の表面を有し、前記半導体材料が(110)方位の表面を有する、請求項18に記載の集積回路構造。
- さらに、前記(110)方位表面に位置する少なくとも1つのpFETおよび前記(100)方位表面に位置する少なくとも1つのnFETを備える、請求項22に記載の集積回路構造。
- さらに、少なくとも1つのpFETおよび少なくとも1つのnFETを備え、各デバイスが前記上部半導体層か前記半導体材料かどちらかに位置し、前記位置が結晶方位に依存する、請求項18に記載の集積回路構造。
- 前記pFETが(110)結晶方位または(111)結晶方位に位置し、一方で、前記nFETが(100)結晶方位または(111)結晶方位に位置する、請求項24に記載の集積回路構造。
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US10/634,446 US6830962B1 (en) | 2003-08-05 | 2003-08-05 | Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes |
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JP2005057284A true JP2005057284A (ja) | 2005-03-03 |
JP4317500B2 JP4317500B2 (ja) | 2009-08-19 |
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JP (1) | JP4317500B2 (ja) |
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Cited By (2)
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JP2006041526A (ja) * | 2004-07-29 | 2006-02-09 | Internatl Business Mach Corp <Ibm> | 集積半導体構造の形成方法(二重simoxハイブリッド配向技術(hot)基板) |
JP2011101007A (ja) * | 2009-10-30 | 2011-05-19 | Imec | 集積半導体基板構造の製造方法 |
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JP2006041526A (ja) * | 2004-07-29 | 2006-02-09 | Internatl Business Mach Corp <Ibm> | 集積半導体構造の形成方法(二重simoxハイブリッド配向技術(hot)基板) |
JP2011101007A (ja) * | 2009-10-30 | 2011-05-19 | Imec | 集積半導体基板構造の製造方法 |
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TWI322502B (en) | 2010-03-21 |
US20050070077A1 (en) | 2005-03-31 |
CN1300853C (zh) | 2007-02-14 |
KR100613188B1 (ko) | 2006-08-17 |
KR20050015995A (ko) | 2005-02-21 |
TW200511578A (en) | 2005-03-16 |
JP4317500B2 (ja) | 2009-08-19 |
US7138683B2 (en) | 2006-11-21 |
US6830962B1 (en) | 2004-12-14 |
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