JP2005057147A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005057147A JP2005057147A JP2003288375A JP2003288375A JP2005057147A JP 2005057147 A JP2005057147 A JP 2005057147A JP 2003288375 A JP2003288375 A JP 2003288375A JP 2003288375 A JP2003288375 A JP 2003288375A JP 2005057147 A JP2005057147 A JP 2005057147A
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- JP
- Japan
- Prior art keywords
- silicon
- silicon oxide
- oxide film
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 38
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 24
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003288375A JP2005057147A (ja) | 2003-08-07 | 2003-08-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003288375A JP2005057147A (ja) | 2003-08-07 | 2003-08-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005057147A true JP2005057147A (ja) | 2005-03-03 |
| JP2005057147A5 JP2005057147A5 (enExample) | 2006-09-21 |
Family
ID=34367042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003288375A Pending JP2005057147A (ja) | 2003-08-07 | 2003-08-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005057147A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227421A (ja) * | 2006-02-21 | 2007-09-06 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7470603B2 (en) | 2006-07-12 | 2008-12-30 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices having laser-formed single crystalline active structures |
| US7851327B2 (en) | 2007-12-18 | 2010-12-14 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device including forming a single-crystalline semiconductor material in a first area and forming a second device isolation pattern on a second area |
-
2003
- 2003-08-07 JP JP2003288375A patent/JP2005057147A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227421A (ja) * | 2006-02-21 | 2007-09-06 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7470603B2 (en) | 2006-07-12 | 2008-12-30 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices having laser-formed single crystalline active structures |
| US7851327B2 (en) | 2007-12-18 | 2010-12-14 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device including forming a single-crystalline semiconductor material in a first area and forming a second device isolation pattern on a second area |
| US8350336B2 (en) | 2007-12-18 | 2013-01-08 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
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