JP2005033219A5 - - Google Patents
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- Publication number
- JP2005033219A5 JP2005033219A5 JP2004265322A JP2004265322A JP2005033219A5 JP 2005033219 A5 JP2005033219 A5 JP 2005033219A5 JP 2004265322 A JP2004265322 A JP 2004265322A JP 2004265322 A JP2004265322 A JP 2004265322A JP 2005033219 A5 JP2005033219 A5 JP 2005033219A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide layer
- manufacturing
- metal layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 45
- 239000004065 semiconductor Substances 0.000 claims 29
- 229910052751 metal Inorganic materials 0.000 claims 27
- 239000002184 metal Substances 0.000 claims 27
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 16
- 229910052739 hydrogen Inorganic materials 0.000 claims 16
- 239000001257 hydrogen Substances 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000004544 sputter deposition Methods 0.000 claims 4
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004265322A JP4602035B2 (ja) | 2002-07-16 | 2004-09-13 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002207540 | 2002-07-16 | ||
| JP2004265322A JP4602035B2 (ja) | 2002-07-16 | 2004-09-13 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003275211A Division JP4267394B2 (ja) | 2002-07-16 | 2003-07-16 | 剥離方法、及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005033219A JP2005033219A (ja) | 2005-02-03 |
| JP2005033219A5 true JP2005033219A5 (https=) | 2006-03-30 |
| JP4602035B2 JP4602035B2 (ja) | 2010-12-22 |
Family
ID=34219800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004265322A Expired - Fee Related JP4602035B2 (ja) | 2002-07-16 | 2004-09-13 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4602035B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011040213A1 (en) | 2009-10-01 | 2011-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2015083042A1 (ja) * | 2013-12-03 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR102385339B1 (ko) | 2015-04-21 | 2022-04-11 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| KR102427672B1 (ko) | 2015-08-11 | 2022-08-02 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 그 제조방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4619461B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP3488361B2 (ja) * | 1997-05-09 | 2004-01-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH11135882A (ja) * | 1997-10-28 | 1999-05-21 | Sharp Corp | 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
| JP4267394B2 (ja) * | 2002-07-16 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 剥離方法、及び半導体装置の作製方法 |
-
2004
- 2004-09-13 JP JP2004265322A patent/JP4602035B2/ja not_active Expired - Fee Related
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