JP4602035B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4602035B2
JP4602035B2 JP2004265322A JP2004265322A JP4602035B2 JP 4602035 B2 JP4602035 B2 JP 4602035B2 JP 2004265322 A JP2004265322 A JP 2004265322A JP 2004265322 A JP2004265322 A JP 2004265322A JP 4602035 B2 JP4602035 B2 JP 4602035B2
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Prior art keywords
layer
film
substrate
oxide layer
hydrogen
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Expired - Fee Related
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JP2004265322A
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Japanese (ja)
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JP2005033219A5 (https=
JP2005033219A (ja
Inventor
徹 高山
純矢 丸山
裕吾 後藤
由美子 大野
卓也 鶴目
秀明 桑原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004265322A priority Critical patent/JP4602035B2/ja
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Publication of JP2005033219A5 publication Critical patent/JP2005033219A5/ja
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Publication of JP4602035B2 publication Critical patent/JP4602035B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004265322A 2002-07-16 2004-09-13 半導体装置の作製方法 Expired - Fee Related JP4602035B2 (ja)

Priority Applications (1)

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JP2004265322A JP4602035B2 (ja) 2002-07-16 2004-09-13 半導体装置の作製方法

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JP2002207540 2002-07-16
JP2004265322A JP4602035B2 (ja) 2002-07-16 2004-09-13 半導体装置の作製方法

Related Parent Applications (1)

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JP2003275211A Division JP4267394B2 (ja) 2002-07-16 2003-07-16 剥離方法、及び半導体装置の作製方法

Publications (3)

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JP2005033219A JP2005033219A (ja) 2005-02-03
JP2005033219A5 JP2005033219A5 (https=) 2006-03-30
JP4602035B2 true JP4602035B2 (ja) 2010-12-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773823B2 (en) 2015-04-21 2017-09-26 Samsung Display Co., Ltd. Display device and method of manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040213A1 (en) 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2015083042A1 (ja) * 2013-12-03 2015-06-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102427672B1 (ko) 2015-08-11 2022-08-02 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP3488361B2 (ja) * 1997-05-09 2004-01-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法
JP4267394B2 (ja) * 2002-07-16 2009-05-27 株式会社半導体エネルギー研究所 剥離方法、及び半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773823B2 (en) 2015-04-21 2017-09-26 Samsung Display Co., Ltd. Display device and method of manufacturing the same

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