JP2005033197A5 - - Google Patents

Download PDF

Info

Publication number
JP2005033197A5
JP2005033197A5 JP2004183048A JP2004183048A JP2005033197A5 JP 2005033197 A5 JP2005033197 A5 JP 2005033197A5 JP 2004183048 A JP2004183048 A JP 2004183048A JP 2004183048 A JP2004183048 A JP 2004183048A JP 2005033197 A5 JP2005033197 A5 JP 2005033197A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
semiconductor device
metal
layer
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004183048A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005033197A (ja
JP4572597B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004183048A priority Critical patent/JP4572597B2/ja
Priority claimed from JP2004183048A external-priority patent/JP4572597B2/ja
Publication of JP2005033197A publication Critical patent/JP2005033197A/ja
Publication of JP2005033197A5 publication Critical patent/JP2005033197A5/ja
Application granted granted Critical
Publication of JP4572597B2 publication Critical patent/JP4572597B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004183048A 2003-06-20 2004-06-21 窒化物半導体素子 Expired - Fee Related JP4572597B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004183048A JP4572597B2 (ja) 2003-06-20 2004-06-21 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003177387 2003-06-20
JP2004183048A JP4572597B2 (ja) 2003-06-20 2004-06-21 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2005033197A JP2005033197A (ja) 2005-02-03
JP2005033197A5 true JP2005033197A5 (ru) 2007-08-02
JP4572597B2 JP4572597B2 (ja) 2010-11-04

Family

ID=34220100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004183048A Expired - Fee Related JP4572597B2 (ja) 2003-06-20 2004-06-21 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4572597B2 (ru)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4980615B2 (ja) 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
JP2006228855A (ja) * 2005-02-16 2006-08-31 Rohm Co Ltd 半導体発光素子およびその製法
US7932111B2 (en) 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
JP2006294907A (ja) * 2005-04-12 2006-10-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP5196288B2 (ja) * 2005-04-27 2013-05-15 信越半導体株式会社 発光素子の製造方法及び発光素子
KR101107473B1 (ko) 2005-05-17 2012-01-19 엘지이노텍 주식회사 발광 다이오드
JP2006332365A (ja) * 2005-05-26 2006-12-07 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置
JP4969087B2 (ja) * 2005-11-28 2012-07-04 スタンレー電気株式会社 共晶ボンディング発光装置とその製造方法
JP5446059B2 (ja) * 2006-04-24 2014-03-19 豊田合成株式会社 ＧａＮ系半導体発光素子の製造方法
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子
JP5264233B2 (ja) * 2008-03-24 2013-08-14 三菱電機株式会社 有機電界発光型表示装置
JP5123269B2 (ja) 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR100999756B1 (ko) * 2009-03-13 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR102689629B1 (ko) * 2009-10-16 2024-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5725927B2 (ja) 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
CN102432958B (zh) * 2010-11-03 2014-05-07 如皋市中如化工有限公司 一种耐寒阻燃级pvc电缆料
JP2012142508A (ja) * 2011-01-06 2012-07-26 Hitachi Cable Ltd 半導体素子用ウェハ
JP5378582B2 (ja) * 2012-08-27 2013-12-25 株式会社東芝 半導体発光素子の製造方法
JP6038564B2 (ja) * 2012-09-20 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 半導体積層体接合用基板およびその製造方法
JP5818031B2 (ja) * 2013-03-21 2015-11-18 ウシオ電機株式会社 Ｌｅｄ素子
KR102256590B1 (ko) * 2014-07-31 2021-05-26 서울바이오시스 주식회사 발광 다이오드
JP6668863B2 (ja) * 2016-03-22 2020-03-18 日亜化学工業株式会社 発光素子
JP7262965B2 (ja) * 2018-10-17 2023-04-24 スタンレー電気株式会社 半導体発光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3130292B2 (ja) * 1997-10-14 2001-01-31 松下電子工業株式会社 半導体発光装置及びその製造方法
JP2003168823A (ja) * 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003243705A (ja) * 2002-02-07 2003-08-29 Lumileds Lighting Us Llc 発光半導体の方法及び装置

Similar Documents

Publication Publication Date Title
JP2005033197A5 (ru)
JP2006066903A5 (ru)
JP2008135406A5 (ru)
US7646036B2 (en) Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrode
JP2006245230A5 (ru)
TW200620709A (en) Semiconductor element
JP2011513983A5 (ru)
JP2005011792A5 (ru)
WO2006030762A1 (ja) 透明導電膜及びその製造方法、並びに透明導電性基材、発光デバイス
JP2011233899A5 (ru)
WO2006098820A3 (en) Method of forming a semiconductor device having a diffusion barrier stack and structure thereof
WO2008154526A4 (en) Method to make low resistance contact
TW200717714A (en) Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement
JP2004526650A5 (ru)
GB2456120A (en) A metallization layer stack without a terminal aluminium metal layer
JP2006108161A5 (ru)
JP2011100991A5 (ru)
TW201242093A (en) Method for producing group III nitride semiconductor light emitting element
JP2007258323A (ja) 半導体発光素子
JP2005033198A5 (ru)
US20200194641A1 (en) Reflective composite material, in particular for surface-mounted devices (smd), and light-emitting device with a composite material of this type
TW200643215A (en) Plated substrate
JP2008047604A5 (ru)
TW200823580A (en) Wiring laminated film and wiring circuit
US8766303B2 (en) Light-emitting diode with a mirror protection layer