JP2005018983A - 半導体不揮発性記憶装置およびメモリシステム - Google Patents

半導体不揮発性記憶装置およびメモリシステム Download PDF

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Publication number
JP2005018983A
JP2005018983A JP2004281465A JP2004281465A JP2005018983A JP 2005018983 A JP2005018983 A JP 2005018983A JP 2004281465 A JP2004281465 A JP 2004281465A JP 2004281465 A JP2004281465 A JP 2004281465A JP 2005018983 A JP2005018983 A JP 2005018983A
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Japan
Prior art keywords
data
memory cells
program
error
memory
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JP2004281465A
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Japanese (ja)
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JP2005018983A5 (enExample
Inventor
Kenshirou Arase
謙士朗 荒瀬
Masanori Noda
昌敬 野田
Hisanobu Sugiyama
寿伸 杉山
Tadahachi Naiki
唯八 内貴
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Sony Corp
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Sony Corp
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Priority to JP2004281465A priority Critical patent/JP2005018983A/ja
Publication of JP2005018983A publication Critical patent/JP2005018983A/ja
Publication of JP2005018983A5 publication Critical patent/JP2005018983A5/ja
Pending legal-status Critical Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2004281465A 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム Pending JP2005018983A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004281465A JP2005018983A (ja) 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32301196 1996-12-03
JP32429396 1996-12-04
JP2004281465A JP2005018983A (ja) 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP05576997A Division JP3941149B2 (ja) 1995-12-04 1997-03-11 半導体不揮発性記憶装置

Publications (2)

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JP2005018983A true JP2005018983A (ja) 2005-01-20
JP2005018983A5 JP2005018983A5 (enExample) 2007-07-26

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JP2004281465A Pending JP2005018983A (ja) 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041171A (ja) * 2006-08-07 2008-02-21 Fujitsu Ltd Ｅｃｃのコード長が変更可能な半導体メモリ装置
US7352630B2 (en) 2005-07-26 2008-04-01 Samsung Electronics Co., Ltd. Non-volatile memory device having improved program speed and associated programming method
US7746703B2 (en) 2007-05-25 2010-06-29 Samsung Electronics Co., Ltd. Flash memory device and method of programming flash memory device
JP2011170927A (ja) * 2010-02-19 2011-09-01 Toshiba Corp 半導体記憶装置
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
US8661294B2 (en) 2010-01-19 2014-02-25 Samsung Electronics Co., Ltd. Nonvolatile memory device and related program verification circuit
CN108932964A (zh) * 2017-05-23 2018-12-04 三星电子株式会社 存储设备和操作存储设备的方法
CN112116944A (zh) * 2020-09-24 2020-12-22 深圳市芯天下技术有限公司 可减少难编程的存储单元编程干扰的编程方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352630B2 (en) 2005-07-26 2008-04-01 Samsung Electronics Co., Ltd. Non-volatile memory device having improved program speed and associated programming method
JP2008041171A (ja) * 2006-08-07 2008-02-21 Fujitsu Ltd Ｅｃｃのコード長が変更可能な半導体メモリ装置
US7746703B2 (en) 2007-05-25 2010-06-29 Samsung Electronics Co., Ltd. Flash memory device and method of programming flash memory device
US8661294B2 (en) 2010-01-19 2014-02-25 Samsung Electronics Co., Ltd. Nonvolatile memory device and related program verification circuit
JP2011170927A (ja) * 2010-02-19 2011-09-01 Toshiba Corp 半導体記憶装置
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
CN108932964A (zh) * 2017-05-23 2018-12-04 三星电子株式会社 存储设备和操作存储设备的方法
CN112116944A (zh) * 2020-09-24 2020-12-22 深圳市芯天下技术有限公司 可减少难编程的存储单元编程干扰的编程方法

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