JP2005011926A - Airtight terminal for optical semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an airtight terminal for optical semiconductor device capable of mounting a semiconductor element having large overall dimensions without revising the design of optical characteristics while preventing the size of itself from increasing. <P>SOLUTION: The airtight terminal for optical semiconductor device is provided with an iron or iron alloy base having a through hole bonded with an insulated lead through insulating glass, and a copper or copper alloy heat sink having a part for mounting a semiconductor element on one side thereof, and the heat sink is bonded to a bottomed recess opening to the upper surface side of the base. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an airtight terminal for an optical semiconductor device.
[0002]
[Prior art]
As a conventional hermetic terminal for an optical semiconductor device, there is one that improves heat dissipation by ensuring a large adhesion area for contacting a heat sink having a semiconductor element mounting surface and a base (for example, Patent Document 1). reference).
[0003]
FIG. 2A is a top view showing a conventional hermetic terminal for an optical semiconductor device described in Patent Document 1, and FIG. 2B is taken along line YY ′ in FIG. FIG.
[0004]
2A and 2B, an airtight terminal 101 for an optical semiconductor device includes a base 102 made of iron or an iron-nickel alloy, a heat sink 103 made of copper or a copper alloy such as a copper-tungsten alloy, and a bottom surface of the base 102. The insulating lead 106 is hermetically sealed by the insulating glass 107 in the ground lead 104 welded to the through hole 105 and the through hole 105 formed in the base 102.
[0005]
The heat sink 103 is provided with a semiconductor element mounting surface 108, a clearance groove 109 of the insulating lead 106, and an outer surface 110 of the clearance groove 109. The semiconductor element mounting surface 108 and the outer surfaces 110 on both sides thereof are flush with each other. Is formed.
[0006]
The heat sink 103 is joined to the upper surface of the base 102 by silver solder (not shown).
[0007]
The heat sink 103 that spreads on both outer sides of the through hole 105 formed in the base 102 is joined, so that a large contact area between the base 102 and the heat sink 103 is secured, and the thermal resistance between the base 102 and the heat sink 103 is greatly increased. The heat generated by the semiconductor element (not shown) was reduced and released.
[0008]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-183440
[Problems to be solved by the invention]
However, in the conventional configuration, it is difficult to mount a semiconductor element having a large outer dimension corresponding to a further increase in output such as high luminance and high wavelength. It is necessary to expand upward. In this case, the light emitting point of the semiconductor element relative to the upper surface of the base 102 moves upward as compared with the conventional case. Therefore, the optical characteristics of the optical semiconductor device itself are changed in design, or the pickup on which the optical semiconductor device is mounted is changed in design. There is a need. In addition, the hermetic terminal for an optical semiconductor device itself has a problem of increasing the size.
[0010]
The present invention solves the above-described conventional problems, and allows a semiconductor element having a large outer dimension to be mounted without changing the design of optical characteristics, and increases the size of a hermetic terminal for a semiconductor device itself. An object of the present invention is to provide an airtight terminal for an optical semiconductor device which is prevented.
[0011]
[Means for Solving the Problems]
In order to solve the above-described conventional problems, an airtight terminal for an optical semiconductor device of the present invention includes a base in which an insulating lead is insulated and fixed to a through hole provided in a base made of iron or an iron alloy via an insulating glass; It is made of copper or copper alloy, and includes a heat sink formed with a semiconductor element mounting portion for mounting a semiconductor element on one surface, and the heat sink is fixed to a bottomed recess having an opening provided on the upper surface side of the base, Furthermore, a projection part surrounding the through hole is formed on the lower surface of the base.
[0012]
With this configuration, it is possible to mount a semiconductor element having a large outer dimension without changing the design of optical characteristics, and it is possible to prevent the airtight terminal for a semiconductor device itself from becoming large.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0014]
(Embodiment)
For example, a laser diode (hereinafter referred to as LD) hermetic terminal will be described as the hermetic terminal for an optical semiconductor device in the embodiment of the present invention. FIG. 1A is a top view of an LD hermetic terminal according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line XX ′ in FIG.
[0015]
1 (a) and 1 (b), an LD hermetic terminal 1 is welded to a base 2 made of iron or an iron-nickel alloy, a heat sink 3 made of copper or a copper alloy such as oxygen-free copper, and a bottom surface of the base 2. An earth lead 4 made of iron or iron-nickel alloy and an insulating lead 6 made of iron or iron-nickel alloy are hermetically sealed by an insulating glass 7 in a through hole 5 formed in the base 2, and the heat sink 3. A semiconductor element mounting surface 8 is formed on the substrate.
[0016]
The base 2 is provided with a recess 9 having an opening on the upper surface for mounting the heat sink 3, and a protrusion 10 is formed from the center of the lower surface of the base 2 to the periphery of the through hole 5. The heat sink 3 is connected to the recess 9 via a silver solder (not shown). According to this, the area of the semiconductor element mounting surface 8 is expanded to the bottom surface of the recess 9.
[0017]
The depth of the recess 9 may be appropriately set according to the size of a semiconductor element (not shown) to be mounted.
[0018]
In addition, when the concave portion 9 is provided deeply, an area (hereinafter referred to as a sealing path) where the insulating glass 7 is in contact with the base 2 and the insulating glass 7 necessary for properly sealing the insulating glass 7 is reduced, and airtightness and insulation are reduced. In some cases, problems such as a decrease in performance may occur. However, according to the present embodiment, an appropriate sealing path can be obtained by the protrusion 10 formed on the lower surface of the base 2, and the occurrence of problems such as a decrease in airtightness and insulation is prevented. The heat sink 3 does not need to be expanded upward, and the airtight terminal is prevented from increasing in size. At this time, the sealing path is desirably at least 0.8 mm.
[0019]
Although the above has described the hermetic terminal for an optical semiconductor device according to the present invention, it can be appropriately changed without departing from the concept of the present invention.
[0020]
【The invention's effect】
As described above, according to the hermetic terminal for an optical semiconductor device of the present invention, a semiconductor element having a large outer dimension can be mounted without changing the design of optical characteristics.
[0021]
An increase in the size of the hermetic terminal for a semiconductor device can be prevented.
[Brief description of the drawings]
FIG. 1A is a top view of an airtight terminal for an optical semiconductor device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line XX ′ of FIG. ) Is a top view of a conventional hermetic terminal for an optical semiconductor device, and FIG. 2B is a cross-sectional view taken along line YY ′ of FIG. 2A.
DESCRIPTION OF SYMBOLS 1 Airtight terminal 2 for optical semiconductor devices Base 3 Heat sink 4 Ground lead 5 Through hole 6 Insulating lead 7 Insulating glass 8 Semiconductor element mounting surface 9 Recess 10 Protrusion 101 Airtight terminal 102 for optical semiconductor device Base 103 Heat sink 104 Earth lead 105 Through hole 106 Insulating lead 107 Insulating glass 108 Semiconductor element mounting surface

Claims (3)

A base in which an insulating lead is insulated and fixed via an insulating glass in a through hole provided in a base made of iron or an iron alloy, and a semiconductor element mounting portion made of copper or a copper alloy and mounting a semiconductor element on one surface An airtight terminal for an optical semiconductor device, comprising: a heat sink formed, wherein the heat sink is fixed to a bottomed recess having an opening provided on the upper surface side of the base. 2. The hermetic terminal for an optical semiconductor device according to claim 1, wherein the semiconductor element mounting portion extending vertically from the bottom surface of the bottomed recess is formed. The hermetic terminal for an optical semiconductor device according to claim 1, wherein a protrusion that surrounds the through hole is formed on a lower surface of the base.

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