WO2017158816A1 - Light-emitting element, structure and method for cooling light-emitting element, and projection display device - Google Patents

Light-emitting element, structure and method for cooling light-emitting element, and projection display device Download PDF

Info

Publication number
WO2017158816A1
WO2017158816A1 PCT/JP2016/058682 JP2016058682W WO2017158816A1 WO 2017158816 A1 WO2017158816 A1 WO 2017158816A1 JP 2016058682 W JP2016058682 W JP 2016058682W WO 2017158816 A1 WO2017158816 A1 WO 2017158816A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting element
light emitting
light
heat sink
semiconductor laser
Prior art date
Application number
PCT/JP2016/058682
Other languages
French (fr)
Japanese (ja)
Inventor
直樹 増田
Original Assignee
Necディスプレイソリューションズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Necディスプレイソリューションズ株式会社 filed Critical Necディスプレイソリューションズ株式会社
Priority to CN201690001276.4U priority Critical patent/CN208571224U/en
Priority to PCT/JP2016/058682 priority patent/WO2017158816A1/en
Publication of WO2017158816A1 publication Critical patent/WO2017158816A1/en

Links

Images

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/502Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/83Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes

Definitions

  • the present invention relates to a light emitting element, a cooling structure and method for the light emitting element, and a projection display device.
  • a projection display device using a light emitting element such as a semiconductor laser or an LED (Light Emitting Diode) as a light source in order to increase the brightness of a projected image.
  • a light emitting element such as a semiconductor laser or an LED (Light Emitting Diode)
  • Patent Document 1 Japanese Patent Laid-Open No. 2015-122142
  • a heat sink is brought into close contact with the bottom and side surfaces of the light emitting element.
  • a configuration in which is increased is disclosed.
  • a countersink hole having the same diameter as the outer diameter of the light emitting element is provided in the heat sink, the light emitting element is inserted into the countersink hole, and the bottom surface and side surface are A contact structure is used.
  • the countersink hole is formed by cutting with a cutting tool.
  • the boundary between the bottom and side surfaces of the countersink hole does not become perpendicular due to the shape of the cutting edge of the cutting tool. It becomes a curved surface.
  • the part where the boundary portion becomes a curved surface is also referred to as “processing R”. For this reason, even if the light emitting element is inserted into the countersunk hole formed in the heat sink and the bottom surface and the side surface of the light emitting element are brought into contact with the heat sink, the corners of the outer peripheral portion of the bottom surface of the light emitting element ride on the boundary portion. There was a problem that the bottom surface floated, the contact deteriorated, and sufficient cooling was not performed.
  • the present invention realizes a light-emitting element that is inserted into a countersink hole formed in a heat sink, and whose bottom surface and side surface are in good contact with the heat sink.
  • the light-emitting element of the present invention is a light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
  • the cooling structure of the light emitting device of the present invention includes the above light emitting device, A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element, The light emitting element is inserted into the counterbore.
  • the projection display device of the present invention includes the light emitting element or the light emitting element cooling structure.
  • a light emitting device having a cylindrical shape and having a bottom surface diameter smaller than the outer shape is inserted into a countersink hole having the same diameter as the outer diameter of the light emitting device formed on a heat sink.
  • the light emitting element cooling structure according to the present invention is provided with a light emitting element having a C-surface processed at the outer periphery of the bottom surface and a countersink hole having the same diameter as the outer diameter of the light emitting element. Equipped with a heat sink.
  • the bottom surface and the side surface of the light emitting element inserted into the countersink hole formed in the heat sink are in good contact with the heat sink.
  • FIG. 5 is a sectional view showing a section XX in FIG. 4. It is an enlarged view which shows the detail of the Y section in FIG. It is the enlarged view which showed the contact state with a heat sink at the time of using the conventional semiconductor laser with which C surface process is not given to the bottom peripheral part.
  • FIG. 1 is a block diagram showing a configuration of an embodiment of a projection display device according to the present invention.
  • the laser light emitted from the semiconductor laser 1 as a light emitting element passes through the condenser lenses 20, 21, 22, 24, 25 and the dichroic mirror 23 and is condensed on the wheel plate 26 provided with the phosphor.
  • the phosphor irradiated with the laser light as the excitation light emits fluorescence.
  • the fluorescence emitted from the phosphor passes through the condenser lenses 25 and 24, is reflected by the dichroic mirror 23, and is collected by the condenser lens 27.
  • the condensed fluorescence is color-separated by the color wheel 28 and enters the rod lens 29.
  • the light incident on the rod lens 29 is emitted after repeated reflection in the rod lens 29.
  • the light emitted from the rod lens 29 passes through the condenser lenses 30 and 31, is reflected by the reflection mirror 32, passes through the condenser lens 33, and is irradiated on the reflective image display element 34.
  • the irradiated light is modulated by the reflective image display element 34, projected onto a projection surface such as a screen by the projection lens 35, and displayed as an image.
  • the projection screen is strongly required to have high illuminance.
  • the semiconductor laser has the characteristic of improving luminous efficiency by lowering its temperature. In the projection display device, reducing the temperature of the semiconductor laser is a very effective means for increasing the illuminance.
  • FIG. 2 is a perspective view showing the cooling structure of the semiconductor laser of the present embodiment
  • FIG. 3 is an exploded perspective view showing the cooling structure of the semiconductor laser of the present embodiment
  • FIG. 4 is a front view showing the cooling structure of the semiconductor laser of the present embodiment.
  • FIG. 5 is a sectional view showing a section XX in FIG. 4, and
  • FIG. 6 is an enlarged view showing details of a Y portion in FIG.
  • the semiconductor laser cooling structure of the present embodiment is applied to a projection display device for projecting an image on a projection screen, and is a structure for cooling a semiconductor laser that is a light source of the projection display device.
  • the semiconductor laser cooling structure of this embodiment includes a plurality of semiconductor lasers 1, a heat sink heat receiving portion 2, and a heat sink heat radiating portion for radiating heat received by the heat sink heat receiving portion 2. 3, a holding member 4 that holds the semiconductor laser 1 to the heat sink heat receiving portion 2, a cooling fan 5 for cooling the heat sink heat radiating portion 3, and an electric substrate 6 for supplying electricity to the semiconductor laser 1. ing.
  • the semiconductor laser 1 is attached to the electric substrate 6 with the heat sink heat receiving part 2 interposed therebetween, and the heat sink heat receiving part 2 is attached to the heat sink heat radiating part 3 by screws 8a to 8d.
  • the semiconductor laser 1 is formed in a cylindrical shape having a flange shape as shown.
  • the holding member 4 is formed with a hole corresponding to the shape of the light emitting surface of the semiconductor laser 1, and is attached to the heat sink heat receiving portion 2 by screws 7 a to 7 d so as to hold the flange portion of the semiconductor laser 1.
  • the heat sink heat receiving portion 2 is provided with a countersink hole 201 having the same diameter as the flange portion that is the outer diameter of the semiconductor laser 1. For this reason, the bottom surface 101 of the semiconductor laser 1 is pressed against the bottom surface 202 of the counterbore hole 201 by the pressing member 4. Further, the side surface 102 of the semiconductor laser 1 is in contact with the side surface 203 of the counterbore hole 201.
  • the counterbored hole 201 is formed with a machining R portion 204 by a tool at the time of machining, but the outer peripheral portion of the bottom surface 101 of the semiconductor laser 1 is a C surface subjected to C surface machining that cuts off a corner ridge line portion with a surface.
  • the diameter of the bottom surface 101 is made smaller than the diameter of the side surface 102 (the outer diameter of the semiconductor laser 1).
  • R-surface processing that cuts off a corner ridge line portion with a curved surface may be used. In short, it suffices if the corner ridge line portion is cut off so as not to contact the processing R portion 204. As a result, the outer peripheral portion of the bottom surface of the semiconductor laser 1 does not run over the processing R portion 204 of the counterbore 201.
  • the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201, and the side surface 102 of the semiconductor laser 1 and the side surface 203 of the countersink hole 201 can be in good contact with each other.
  • FIG. 7 is a view showing a mounting state when a semiconductor laser 1 in which the C-surface processing is not performed on the outer peripheral portion of the bottom surface is used as a comparative example.
  • the corner of the outer peripheral portion of the semiconductor laser 1 rides on the machining R portion 204 of the countersink hole. For this reason, the contact between the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201 is deteriorated.
  • the illustrated configuration is merely an example, and the present invention is not limited to the configuration.
  • a part or all of the above-described embodiment can be described as follows, but is not limited to the following configuration.
  • (Supplementary note 1) A light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
  • (Additional remark 2) In the light emitting element of Additional remark 1, A light emitting device in which a diameter of the bottom surface is made smaller than an outer shape by performing C-plane processing by cutting off a ridge line portion that becomes a corner of the outer peripheral portion of the bottom surface.
  • Appendix 3 The light-emitting element according to Appendix 1 or Appendix 2, A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element, A cooling structure of a light emitting element in which the light emitting element is inserted into the counterbore.
  • the projection type display apparatus provided with the light emitting element of Additional remark 1 or Additional remark 2.
  • Additional remark 5 The projection type display apparatus provided with the cooling structure of the light emitting element of Additional remark 3.

Abstract

The present invention realizes a light-emitting element which is inserted into a counter-bored hole formed in a heat sink and the bottom surface and a lateral surface of which favorably come into contact with the heat sink. The light-emitting element having a columnar shape and having a bottom face diameter smaller than the outer shape thereof is inserted into a counter-bored hole being formed in a heat sink and having the same diameter as the outer diameter of the light-emitting element.

Description

発光素子、発光素子の冷却構造と方法、および、投写型表示装置Light emitting element, light emitting element cooling structure and method, and projection display device
 本発明は、発光素子、発光素子の冷却構造と方法、および、投写型表示装置に関する。 The present invention relates to a light emitting element, a cooling structure and method for the light emitting element, and a projection display device.
 投写型表示装置として、投写映像の輝度を高めるために光源として半導体レーザーやLED(Light Emitting Diode)などの発光素子を使用する投写型表示装置が提案されている。 As a projection display device, there has been proposed a projection display device using a light emitting element such as a semiconductor laser or an LED (Light Emitting Diode) as a light source in order to increase the brightness of a projected image.
 このような投写型表示装置において、発光素子の冷却効率を上げる構造について、特許文献1(特開2015-122142号公報)に、発光素子の底面および側面にヒートシンクを密着させて、ヒートシンクの接触面積を大きくした構成が開示されている。 In such a projection display device, a structure for increasing the cooling efficiency of the light emitting element is disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2015-122142), in which a heat sink is brought into close contact with the bottom and side surfaces of the light emitting element. A configuration in which is increased is disclosed.
特開2015-122142号公報JP2015-122142A
 一般的に、発光素子の底面および側面を冷却する構造として、ヒートシンクに発光素子の外径と同じ径の座繰り穴を設け、発光素子をその座繰り穴に挿入し、底面と側面をヒートシンクに接触させる構造が使用される。 Generally, as a structure for cooling the bottom surface and side surface of the light emitting element, a countersink hole having the same diameter as the outer diameter of the light emitting element is provided in the heat sink, the light emitting element is inserted into the countersink hole, and the bottom surface and side surface are A contact structure is used.
 座繰り穴の形成は、切削工具を用いた切削により行われるが、座繰り穴加工を施す際に、切削工具の刃先の形状により、座繰り穴の底面と側面の境界部分が直角にならずに曲面になってしまう。なお、このように境界部分が曲面になってしまう箇所のことを「加工R」ともいう。このため、ヒートシンクに形成された座繰り穴に発光素子を挿入して発光素子の底面と側面をヒートシンクに接触させようとしても、発光素子の底面外周部の角がその境界部分に乗り上げてしまい、底面が浮き、接触が悪くなり、十分な冷却が行われないという問題があった。 The countersink hole is formed by cutting with a cutting tool. However, when the countersink hole is processed, the boundary between the bottom and side surfaces of the countersink hole does not become perpendicular due to the shape of the cutting edge of the cutting tool. It becomes a curved surface. In addition, the part where the boundary portion becomes a curved surface is also referred to as “processing R”. For this reason, even if the light emitting element is inserted into the countersunk hole formed in the heat sink and the bottom surface and the side surface of the light emitting element are brought into contact with the heat sink, the corners of the outer peripheral portion of the bottom surface of the light emitting element ride on the boundary portion. There was a problem that the bottom surface floated, the contact deteriorated, and sufficient cooling was not performed.
 本発明は、ヒートシンクに形成された座繰り穴に挿入され、底面と側面がヒートシンクに良好に接触する発光素子を実現する。 The present invention realizes a light-emitting element that is inserted into a countersink hole formed in a heat sink, and whose bottom surface and side surface are in good contact with the heat sink.
 本発明の発光素子は、円柱形状を備え、底面の径が外形よりも小さな発光素子。 The light-emitting element of the present invention is a light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
 本発明の発光素子の冷却構造は、上記の発光素子と、
 前記発光素子の外径と同じ径の座繰り穴が形成されたヒートシンクと、からなり、
 前記座繰り穴に前記発光素子を挿入する。
The cooling structure of the light emitting device of the present invention includes the above light emitting device,
A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element,
The light emitting element is inserted into the counterbore.
 本発明の投写型表示装置は、上記の発光素子、または、発光素子の冷却構造を備えている。 The projection display device of the present invention includes the light emitting element or the light emitting element cooling structure.
 本発明の発光素子の冷却方法は、円柱形状を備え、底面の径が外形よりも小さな発光素子を、ヒートシンクに形成された前記発光素子の外径と同じ径の座繰り穴に挿入する。
上述した目的を達成するために、本発明に係る発光素子の冷却構造は、底面外周部にC面加工が施された発光素子と、発光素子の外径と同じ径の座繰り穴が設けられたヒートシンクを備える。
In the method for cooling a light emitting device of the present invention, a light emitting device having a cylindrical shape and having a bottom surface diameter smaller than the outer shape is inserted into a countersink hole having the same diameter as the outer diameter of the light emitting device formed on a heat sink.
In order to achieve the above-described object, the light emitting element cooling structure according to the present invention is provided with a light emitting element having a C-surface processed at the outer periphery of the bottom surface and a countersink hole having the same diameter as the outer diameter of the light emitting element. Equipped with a heat sink.
 上記の構成を備える本発明においては、ヒートシンクに形成された座繰り穴に挿入される発光素子の底面と側面がヒートシンクに良好に接触する。 In the present invention having the above configuration, the bottom surface and the side surface of the light emitting element inserted into the countersink hole formed in the heat sink are in good contact with the heat sink.
本発明による投写型表示装置の一実施形態の構成を示すブロック図である。It is a block diagram which shows the structure of one Embodiment of the projection type display apparatus by this invention. 本実施形態の半導体レーザーの冷却構造を示す斜視図である。It is a perspective view which shows the cooling structure of the semiconductor laser of this embodiment. 図2の冷却構造を示す分解斜視図である。It is a disassembled perspective view which shows the cooling structure of FIG. 図2の冷却構造を示す正面図である。It is a front view which shows the cooling structure of FIG. 図4における断面X-Xを示す断面図である。FIG. 5 is a sectional view showing a section XX in FIG. 4. 図5におけるY部の詳細を示す拡大図である。It is an enlarged view which shows the detail of the Y section in FIG. 底面外周部にC面加工が施されていない従来の半導体レーザーを使用した場合の、ヒートシンクとの接触状態を示した拡大図である。It is the enlarged view which showed the contact state with a heat sink at the time of using the conventional semiconductor laser with which C surface process is not given to the bottom peripheral part.
 次に、本発明の実施形態について図面を参照して説明する。 Next, an embodiment of the present invention will be described with reference to the drawings.
 図1は、本発明による投写型表示装置の一実施形態の構成を示すブロック図である。 FIG. 1 is a block diagram showing a configuration of an embodiment of a projection display device according to the present invention.
 発光素子である半導体レーザー1から出射したレーザー光は、集光レンズ20、21、22、24、25およびダイクロイックミラー23を通り、蛍光体が施されたホイール板26に集光する。励起光としてのレーザー光を照射された蛍光体は蛍光を放出する。蛍光体より放出された蛍光は、集光レンズ25、24を通り、ダイクロイックミラー23にて反射され、集光レンズ27により集光される。集光された蛍光は、カラーホイール28にて色分離され、ロッドレンズ29に入射する。ロッドレンズ29に入射した光は、ロッドレンズ29内で反射を繰り返した後に出射される。ロッドレンズ29より出射された光は、集光レンズ30、31を通り、反射ミラー32にて反射され、さらに集光レンズ33を通り、反射型画像表示素子34に照射される。照射された光は、反射型画像表示素子34により変調され、投写レンズ35により、スクリーンなどの投写面上へ投写され、画像として表示される。 The laser light emitted from the semiconductor laser 1 as a light emitting element passes through the condenser lenses 20, 21, 22, 24, 25 and the dichroic mirror 23 and is condensed on the wheel plate 26 provided with the phosphor. The phosphor irradiated with the laser light as the excitation light emits fluorescence. The fluorescence emitted from the phosphor passes through the condenser lenses 25 and 24, is reflected by the dichroic mirror 23, and is collected by the condenser lens 27. The condensed fluorescence is color-separated by the color wheel 28 and enters the rod lens 29. The light incident on the rod lens 29 is emitted after repeated reflection in the rod lens 29. The light emitted from the rod lens 29 passes through the condenser lenses 30 and 31, is reflected by the reflection mirror 32, passes through the condenser lens 33, and is irradiated on the reflective image display element 34. The irradiated light is modulated by the reflective image display element 34, projected onto a projection surface such as a screen by the projection lens 35, and displayed as an image.
 一方、投写画面においては、照度が高いことが強く求められている。 On the other hand, the projection screen is strongly required to have high illuminance.
 これらの要求は、蛍光体から放出される光量により定まるところが大きい。蛍光体から放出される光量を上げるためには、蛍光体に照射する半導体レーザー光の光量を上げる必要があるが、半導体レーザーは、その温度を下げることにより、発光効率が向上する特性があるため、投写型表示装置において、半導体レーザーの温度を下げることは、照度を上げるために非常に有効な手段である。 These requirements are largely determined by the amount of light emitted from the phosphor. In order to increase the amount of light emitted from the phosphor, it is necessary to increase the amount of semiconductor laser light applied to the phosphor. However, the semiconductor laser has the characteristic of improving luminous efficiency by lowering its temperature. In the projection display device, reducing the temperature of the semiconductor laser is a very effective means for increasing the illuminance.
 図2は本実施形態の半導体レーザーの冷却構造を示す斜視図、図3は本実施形態の半導体レーザーの冷却構造を示す分解斜視図、図4は本実施形態の半導体レーザーの冷却構造を示す正面図、図5は図4における断面X-Xを示す断面図、図6は図5におけるY部の詳細を示す拡大図である。 2 is a perspective view showing the cooling structure of the semiconductor laser of the present embodiment, FIG. 3 is an exploded perspective view showing the cooling structure of the semiconductor laser of the present embodiment, and FIG. 4 is a front view showing the cooling structure of the semiconductor laser of the present embodiment. FIG. 5 is a sectional view showing a section XX in FIG. 4, and FIG. 6 is an enlarged view showing details of a Y portion in FIG.
 本実施形態の半導体レーザーの冷却構造は、投写画面上に映像を投写するための投写型表示装置に適用され、該投写型表示装置の光源である半導体レーザーを冷却するための構造である。 The semiconductor laser cooling structure of the present embodiment is applied to a projection display device for projecting an image on a projection screen, and is a structure for cooling a semiconductor laser that is a light source of the projection display device.
 図2および図3に示すように、本実施形態の半導体レーザーの冷却構造は、複数の半導体レーザー1と、ヒートシンク受熱部2と、ヒートシンク受熱部2で受熱した熱を放熱するためのヒートシンク放熱部3と、半導体レーザー1をヒートシンク受熱部2に押止する押止部材4と、ヒートシンク放熱部3を冷却するための冷却ファン5と、半導体レーザー1に電気を供給するための電気基板6を備えている。 As shown in FIGS. 2 and 3, the semiconductor laser cooling structure of this embodiment includes a plurality of semiconductor lasers 1, a heat sink heat receiving portion 2, and a heat sink heat radiating portion for radiating heat received by the heat sink heat receiving portion 2. 3, a holding member 4 that holds the semiconductor laser 1 to the heat sink heat receiving portion 2, a cooling fan 5 for cooling the heat sink heat radiating portion 3, and an electric substrate 6 for supplying electricity to the semiconductor laser 1. ing.
 半導体レーザー1は、ヒートシンク受熱部2を挟んで電気基板6に取り付けられ、ヒートシンク受熱部2はねじ8a~8dによりヒートシンク放熱部3に取り付けられている。 The semiconductor laser 1 is attached to the electric substrate 6 with the heat sink heat receiving part 2 interposed therebetween, and the heat sink heat receiving part 2 is attached to the heat sink heat radiating part 3 by screws 8a to 8d.
 半導体レーザー1は図示されるようにフランジ形状を備えた円柱形状に形成されている。押止部材4は、半導体レーザー1の光出射面の形状に対応する穴が形成されており、半導体レーザー1のフランジ部分を押さえる形態でねじ7a~7dによりヒートシンク受熱部2に取り付けられている。 The semiconductor laser 1 is formed in a cylindrical shape having a flange shape as shown. The holding member 4 is formed with a hole corresponding to the shape of the light emitting surface of the semiconductor laser 1, and is attached to the heat sink heat receiving portion 2 by screws 7 a to 7 d so as to hold the flange portion of the semiconductor laser 1.
 図3乃至図6に示すように、ヒートシンク受熱部2には、半導体レーザー1の外径となるフランジ部と同じ径の座繰り穴201が設けられている。このため、半導体レーザー1の底面101は、座繰り穴201の底面202に、押止部材4により押し付けられる。また、半導体レーザー1の側面102は、座繰り穴201の側面203と接触している。 As shown in FIGS. 3 to 6, the heat sink heat receiving portion 2 is provided with a countersink hole 201 having the same diameter as the flange portion that is the outer diameter of the semiconductor laser 1. For this reason, the bottom surface 101 of the semiconductor laser 1 is pressed against the bottom surface 202 of the counterbore hole 201 by the pressing member 4. Further, the side surface 102 of the semiconductor laser 1 is in contact with the side surface 203 of the counterbore hole 201.
 座繰り穴201には加工時に工具により加工R部204が形成されているが、半導体レーザー1の底面101の外周部は、角となる稜線部分を面で切り落とすC面加工が施されたC面加工部103とされ、底面101の径は、側面102の径(半導体レーザー1の外径)よりも小さなものとされている。ここで、C面加工に代わり、角となる稜線部分を曲面で切り落とすR面加工でも構わない。要するに、加工R部204と接触しないように、角となる稜線部分を切り落とす加工がされていればよい。これにより、半導体レーザー1の底面外周部が座繰り穴201の加工R部204に乗り上げることがない。 The counterbored hole 201 is formed with a machining R portion 204 by a tool at the time of machining, but the outer peripheral portion of the bottom surface 101 of the semiconductor laser 1 is a C surface subjected to C surface machining that cuts off a corner ridge line portion with a surface. The diameter of the bottom surface 101 is made smaller than the diameter of the side surface 102 (the outer diameter of the semiconductor laser 1). Here, instead of the C-surface processing, R-surface processing that cuts off a corner ridge line portion with a curved surface may be used. In short, it suffices if the corner ridge line portion is cut off so as not to contact the processing R portion 204. As a result, the outer peripheral portion of the bottom surface of the semiconductor laser 1 does not run over the processing R portion 204 of the counterbore 201.
 したがって、半導体レーザー1の底面101と座繰り穴201の底面202、半導体レーザー1の側面102と座繰り穴201の側面203は、共に、良好に接触することができる。 Therefore, the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201, and the side surface 102 of the semiconductor laser 1 and the side surface 203 of the countersink hole 201 can be in good contact with each other.
 図7は、比較例として、底面外周部にC面加工が施されていない半導体レーザー1を使用したときの取り付け状態を示す図である。半導体レーザー1の外周部の角が、座繰り穴の加工R部204に乗り上げている。このため、半導体レーザー1の底面101と座繰り穴201の底面202の接触が悪くなっている。 FIG. 7 is a view showing a mounting state when a semiconductor laser 1 in which the C-surface processing is not performed on the outer peripheral portion of the bottom surface is used as a comparative example. The corner of the outer peripheral portion of the semiconductor laser 1 rides on the machining R portion 204 of the countersink hole. For this reason, the contact between the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201 is deteriorated.
 上記のように、本実施形態においては、半導体レーザー1の底面101の外周部にC面加工を施すことにより、ヒートシンク受熱部2に設けられた座繰り穴201の加工Rに乗り上げることがなくなり、半導体レーザー1の底面101および側面102を座繰り穴201の底面202および側面203に良好に接触させ、従来に比べ、冷却効率を向上することができた。この結果、従来に比べ照度が高く、かつ経時的な照度維持率の高い、投写型表示装置を提供することができた。 As described above, in this embodiment, by performing C surface processing on the outer peripheral portion of the bottom surface 101 of the semiconductor laser 1, it is not necessary to ride on the processing R of the counterbore 201 provided in the heat sink heat receiving portion 2, The bottom surface 101 and the side surface 102 of the semiconductor laser 1 were brought into good contact with the bottom surface 202 and the side surface 203 of the counterbore 201, and the cooling efficiency was improved as compared with the conventional case. As a result, it has been possible to provide a projection display device that has a higher illuminance than before and a high illuminance maintenance rate over time.
 以上説明した実施形態において、図示した構成は単なる一例であって、本発明はその構成に限定されるものではない。 In the embodiment described above, the illustrated configuration is merely an example, and the present invention is not limited to the configuration.
 上記の実施形態の一部又は全部は、以下のようにも記載されうるが、以下の構成には限られない。
(付記1) 円柱形状を備え、底面の径が外形よりも小さな発光素子。
(付記2) 付記1記載の発光素子において、
 前記底面の外周部の角となる稜線部分に面で切り落とすC面加工が施されることにより、底面の径が外形よりも小さなものとされる発光素子。
(付記3) 付記1または付記2に記載の発光素子と、
 前記発光素子の外径と同じ径の座繰り穴が形成されたヒートシンクと、からなり、
 前記座繰り穴に前記発光素子を挿入する発光素子の冷却構造。
(付記4) 付記1または付記2に記載の発光素子を備えた投写型表示装置。
(付記5) 付記3記載の発光素子の冷却構造を備えた投写型表示装置。
(付記6) 円柱形状を備え、底面の径が外形よりも小さな発光素子を、ヒートシンクに形成された前記発光素子の外径と同じ径の座繰り穴に挿入する発光素子の冷却方法。
A part or all of the above-described embodiment can be described as follows, but is not limited to the following configuration.
(Supplementary note 1) A light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
(Additional remark 2) In the light emitting element of Additional remark 1,
A light emitting device in which a diameter of the bottom surface is made smaller than an outer shape by performing C-plane processing by cutting off a ridge line portion that becomes a corner of the outer peripheral portion of the bottom surface.
(Appendix 3) The light-emitting element according to Appendix 1 or Appendix 2,
A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element,
A cooling structure of a light emitting element in which the light emitting element is inserted into the counterbore.
(Additional remark 4) The projection type display apparatus provided with the light emitting element of Additional remark 1 or Additional remark 2.
(Additional remark 5) The projection type display apparatus provided with the cooling structure of the light emitting element of Additional remark 3.
(Additional remark 6) The cooling method of the light emitting element which inserts in a countersink hole of the same diameter as the outer diameter of the said light emitting element formed in the heat sink with a cylindrical shape and the diameter of a bottom face is smaller than an external shape.
 1 半導体レーザー
 2 ヒートシンク受熱部
 3 ヒートシンク放熱部
 4 押止部材
 5 冷却ファン
 6 電気基板
 7a、7b、7c、7d、8a、8b、8c、8d ねじ
 20,21,22 集光レンズ
 23 ダイクロイックミラー
 24、25 集光レンズ
 26 ホイール板
 27 集光レンズ
 28 カラーホイール板
 29 ロッドレンズ
 30、31 集光レンズ
 32 反射ミラー
 33 集光レンズ
 34 反射型画像表示素子
 35 投写レンズ
 101 底面
 102 側面
 103 C面加工部
 201 座繰り穴
 202 底面
 203 側面
 204 加工R部
DESCRIPTION OF SYMBOLS 1 Semiconductor laser 2 Heat sink heat receiving part 3 Heat sink heat radiating part 4 Holding member 5 Cooling fan 6 Electric board 7a, 7b, 7c, 7d, 8a, 8b, 8c, 8d Screw 20, 21, 22 Condensing lens 23 Dichroic mirror 24, DESCRIPTION OF SYMBOLS 25 Condensing lens 26 Wheel board 27 Condensing lens 28 Color wheel board 29 Rod lens 30, 31 Condensing lens 32 Reflecting mirror 33 Condensing lens 34 Reflection type image display element 35 Projection lens 101 Bottom face 102 Side face 103 C surface process part 201 Counterbore hole 202 Bottom surface 203 Side surface 204 Processing R section

Claims (6)

  1. 円柱形状を備え、底面の径が外形よりも小さな発光素子。 A light emitting device having a cylindrical shape and having a bottom diameter smaller than the outer shape.
  2. 請求項1記載の発光素子において、
     前記底面の外周部の角となる稜線部分に面で切り落とすC面加工若しくは前記底面の外周部の角となる稜線部分に曲面で切り落とすR面加工が施されることにより、底面の径が外形よりも小さなものとされる発光素子。
    The light emitting device according to claim 1.
    C-face machining that cuts off the ridgeline that becomes the corner of the outer peripheral portion of the bottom surface or R-face machining that cuts off the curved surface of the ridgeline portion that becomes the corner of the outer peripheral portion of the bottom surface, so that the diameter of the bottom surface Light-emitting elements that are considered to be small.
  3. 請求項1または請求項2に記載の発光素子と、
     前記発光素子の外径と同じ径の座繰り穴が形成されたヒートシンクと、からなり、
     前記座繰り穴に前記発光素子を挿入する発光素子の冷却構造。
    The light emitting device according to claim 1 or 2,
    A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element,
    A cooling structure of a light emitting element in which the light emitting element is inserted into the counterbore.
  4. 請求項1または請求項2に記載の発光素子を備えた投写型表示装置。 A projection display device comprising the light emitting element according to claim 1.
  5. 請求項3記載の発光素子の冷却構造を備えた投写型表示装置。 A projection display device comprising the light emitting element cooling structure according to claim 3.
  6. 円柱形状を備え、底面の径が外形よりも小さな発光素子を、ヒートシンクに形成された前記発光素子の外径と同じ径の座繰り穴に挿入する発光素子の冷却方法。 A cooling method of a light emitting element, wherein a light emitting element having a cylindrical shape and having a bottom diameter smaller than an outer shape is inserted into a countersink hole having the same diameter as the outer diameter of the light emitting element formed on a heat sink.
PCT/JP2016/058682 2016-03-18 2016-03-18 Light-emitting element, structure and method for cooling light-emitting element, and projection display device WO2017158816A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201690001276.4U CN208571224U (en) 2016-03-18 2016-03-18 The cooling structure and projection display device of light-emitting component, light-emitting component
PCT/JP2016/058682 WO2017158816A1 (en) 2016-03-18 2016-03-18 Light-emitting element, structure and method for cooling light-emitting element, and projection display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/058682 WO2017158816A1 (en) 2016-03-18 2016-03-18 Light-emitting element, structure and method for cooling light-emitting element, and projection display device

Publications (1)

Publication Number Publication Date
WO2017158816A1 true WO2017158816A1 (en) 2017-09-21

Family

ID=59850678

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/058682 WO2017158816A1 (en) 2016-03-18 2016-03-18 Light-emitting element, structure and method for cooling light-emitting element, and projection display device

Country Status (2)

Country Link
CN (1) CN208571224U (en)
WO (1) WO2017158816A1 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395244U (en) * 1986-12-11 1988-06-20
JPH11261164A (en) * 1998-03-13 1999-09-24 Hitachi Ltd Laser diode module, and manufacturing method and laser diode therefor
JP2004128378A (en) * 2002-10-07 2004-04-22 Sharp Corp Semiconductor laser device and manufacturing method thereof
JP2005011926A (en) * 2003-06-18 2005-01-13 Matsushita Electric Ind Co Ltd Airtight terminal for optical semiconductor device
JP2012079827A (en) * 2010-09-30 2012-04-19 Panasonic Corp Semiconductor light emitting device and light source device
JP2012083522A (en) * 2010-10-12 2012-04-26 Sony Corp Illumination device, projection display device, and direct-view display device
JP2013138086A (en) * 2011-12-28 2013-07-11 Nichia Chem Ind Ltd Light source device
US20130256736A1 (en) * 2010-09-20 2013-10-03 Osram Opto Semiconductors Gmbh Package for an Optoelectronic Semiconductor Component and Semiconductor Component
JP2014027307A (en) * 2011-11-30 2014-02-06 Panasonic Corp Nitride semiconductor light-emitting device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395244U (en) * 1986-12-11 1988-06-20
JPH11261164A (en) * 1998-03-13 1999-09-24 Hitachi Ltd Laser diode module, and manufacturing method and laser diode therefor
JP2004128378A (en) * 2002-10-07 2004-04-22 Sharp Corp Semiconductor laser device and manufacturing method thereof
JP2005011926A (en) * 2003-06-18 2005-01-13 Matsushita Electric Ind Co Ltd Airtight terminal for optical semiconductor device
US20130256736A1 (en) * 2010-09-20 2013-10-03 Osram Opto Semiconductors Gmbh Package for an Optoelectronic Semiconductor Component and Semiconductor Component
JP2012079827A (en) * 2010-09-30 2012-04-19 Panasonic Corp Semiconductor light emitting device and light source device
JP2012083522A (en) * 2010-10-12 2012-04-26 Sony Corp Illumination device, projection display device, and direct-view display device
JP2014027307A (en) * 2011-11-30 2014-02-06 Panasonic Corp Nitride semiconductor light-emitting device
JP2013138086A (en) * 2011-12-28 2013-07-11 Nichia Chem Ind Ltd Light source device

Also Published As

Publication number Publication date
CN208571224U (en) 2019-03-01

Similar Documents

Publication Publication Date Title
EP1024398B1 (en) Solid state based illumination source for a projection display
US11520218B2 (en) Projection apparatus and phosphor wheel thereof
EP2461087A1 (en) Led illuminating device for stage lighting and method for improving color uniformity of the device
US9207523B2 (en) Projector with fan and heat sinks
US20150355533A1 (en) Semiconductor element cooling structure and electronic apparatus provided with same
CN106461201B (en) Illumination device and display device
TW201307984A (en) Light source device and projector
US20200271282A1 (en) Light-emitting element and illumination device
US20160349604A1 (en) Projection image display apparatus
JP7207903B2 (en) Light source device and projection display device having the same
JP2016058619A (en) Light-emitting device
JP2014078369A (en) Surface light-emitting device
JP2020042236A (en) Phosphor wheel device, illumination device, and projection-type image display apparatus
US20190331989A1 (en) Wavelength conversion module, forming method of wavelength conversion module, and projection device
JP2007179971A (en) Light source equipment
US10567717B2 (en) Light source device and projection type display apparatus including light source device
MX2012013046A (en) High intensity led replacement of incandescent lamps.
WO2017158816A1 (en) Light-emitting element, structure and method for cooling light-emitting element, and projection display device
JP6410085B2 (en) Fastening structure, projection apparatus including the fastening structure, and fastening method
JP6187023B2 (en) Light source device and projector
JP2018147703A (en) Light source device
TWI749052B (en) Light combining module
JP2007086140A (en) Liquid crystal projector
JP2011028970A (en) Luminaire for clean room
CN105527787B (en) Light emitting device, light source system and projection system

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16894434

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16894434

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP