WO2017158816A1 - Élément électroluminescent, structure et procédé de refroidissement d'élément électroluminescent, et dispositif d'affichage par projection - Google Patents

Élément électroluminescent, structure et procédé de refroidissement d'élément électroluminescent, et dispositif d'affichage par projection Download PDF

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Publication number
WO2017158816A1
WO2017158816A1 PCT/JP2016/058682 JP2016058682W WO2017158816A1 WO 2017158816 A1 WO2017158816 A1 WO 2017158816A1 JP 2016058682 W JP2016058682 W JP 2016058682W WO 2017158816 A1 WO2017158816 A1 WO 2017158816A1
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WO
WIPO (PCT)
Prior art keywords
emitting element
light emitting
light
heat sink
semiconductor laser
Prior art date
Application number
PCT/JP2016/058682
Other languages
English (en)
Japanese (ja)
Inventor
直樹 増田
Original Assignee
Ｎｅｃディスプレイソリューションズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｎｅｃディスプレイソリューションズ株式会社 filed Critical Ｎｅｃディスプレイソリューションズ株式会社
Priority to PCT/JP2016/058682 priority Critical patent/WO2017158816A1/fr
Priority to CN201690001276.4U priority patent/CN208571224U/zh
Publication of WO2017158816A1 publication Critical patent/WO2017158816A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes

Definitions

  • the present invention relates to a light emitting element, a cooling structure and method for the light emitting element, and a projection display device.
  • a projection display device using a light emitting element such as a semiconductor laser or an LED (Light Emitting Diode) as a light source in order to increase the brightness of a projected image.
  • a light emitting element such as a semiconductor laser or an LED (Light Emitting Diode)
  • Patent Document 1 Japanese Patent Laid-Open No. 2015-122142
  • a heat sink is brought into close contact with the bottom and side surfaces of the light emitting element.
  • a configuration in which is increased is disclosed.
  • a countersink hole having the same diameter as the outer diameter of the light emitting element is provided in the heat sink, the light emitting element is inserted into the countersink hole, and the bottom surface and side surface are A contact structure is used.
  • the countersink hole is formed by cutting with a cutting tool.
  • the boundary between the bottom and side surfaces of the countersink hole does not become perpendicular due to the shape of the cutting edge of the cutting tool. It becomes a curved surface.
  • the part where the boundary portion becomes a curved surface is also referred to as “processing R”. For this reason, even if the light emitting element is inserted into the countersunk hole formed in the heat sink and the bottom surface and the side surface of the light emitting element are brought into contact with the heat sink, the corners of the outer peripheral portion of the bottom surface of the light emitting element ride on the boundary portion. There was a problem that the bottom surface floated, the contact deteriorated, and sufficient cooling was not performed.
  • the present invention realizes a light-emitting element that is inserted into a countersink hole formed in a heat sink, and whose bottom surface and side surface are in good contact with the heat sink.
  • the light-emitting element of the present invention is a light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
  • the cooling structure of the light emitting device of the present invention includes the above light emitting device, A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element, The light emitting element is inserted into the counterbore.
  • the projection display device of the present invention includes the light emitting element or the light emitting element cooling structure.
  • a light emitting device having a cylindrical shape and having a bottom surface diameter smaller than the outer shape is inserted into a countersink hole having the same diameter as the outer diameter of the light emitting device formed on a heat sink.
  • the light emitting element cooling structure according to the present invention is provided with a light emitting element having a C-surface processed at the outer periphery of the bottom surface and a countersink hole having the same diameter as the outer diameter of the light emitting element. Equipped with a heat sink.
  • the bottom surface and the side surface of the light emitting element inserted into the countersink hole formed in the heat sink are in good contact with the heat sink.
  • FIG. 5 is a sectional view showing a section XX in FIG. 4. It is an enlarged view which shows the detail of the Y section in FIG. It is the enlarged view which showed the contact state with a heat sink at the time of using the conventional semiconductor laser with which C surface process is not given to the bottom peripheral part.
  • FIG. 1 is a block diagram showing a configuration of an embodiment of a projection display device according to the present invention.
  • the laser light emitted from the semiconductor laser 1 as a light emitting element passes through the condenser lenses 20, 21, 22, 24, 25 and the dichroic mirror 23 and is condensed on the wheel plate 26 provided with the phosphor.
  • the phosphor irradiated with the laser light as the excitation light emits fluorescence.
  • the fluorescence emitted from the phosphor passes through the condenser lenses 25 and 24, is reflected by the dichroic mirror 23, and is collected by the condenser lens 27.
  • the condensed fluorescence is color-separated by the color wheel 28 and enters the rod lens 29.
  • the light incident on the rod lens 29 is emitted after repeated reflection in the rod lens 29.
  • the light emitted from the rod lens 29 passes through the condenser lenses 30 and 31, is reflected by the reflection mirror 32, passes through the condenser lens 33, and is irradiated on the reflective image display element 34.
  • the irradiated light is modulated by the reflective image display element 34, projected onto a projection surface such as a screen by the projection lens 35, and displayed as an image.
  • the projection screen is strongly required to have high illuminance.
  • the semiconductor laser has the characteristic of improving luminous efficiency by lowering its temperature. In the projection display device, reducing the temperature of the semiconductor laser is a very effective means for increasing the illuminance.
  • FIG. 2 is a perspective view showing the cooling structure of the semiconductor laser of the present embodiment
  • FIG. 3 is an exploded perspective view showing the cooling structure of the semiconductor laser of the present embodiment
  • FIG. 4 is a front view showing the cooling structure of the semiconductor laser of the present embodiment.
  • FIG. 5 is a sectional view showing a section XX in FIG. 4, and
  • FIG. 6 is an enlarged view showing details of a Y portion in FIG.
  • the semiconductor laser cooling structure of the present embodiment is applied to a projection display device for projecting an image on a projection screen, and is a structure for cooling a semiconductor laser that is a light source of the projection display device.
  • the semiconductor laser cooling structure of this embodiment includes a plurality of semiconductor lasers 1, a heat sink heat receiving portion 2, and a heat sink heat radiating portion for radiating heat received by the heat sink heat receiving portion 2. 3, a holding member 4 that holds the semiconductor laser 1 to the heat sink heat receiving portion 2, a cooling fan 5 for cooling the heat sink heat radiating portion 3, and an electric substrate 6 for supplying electricity to the semiconductor laser 1. ing.
  • the semiconductor laser 1 is attached to the electric substrate 6 with the heat sink heat receiving part 2 interposed therebetween, and the heat sink heat receiving part 2 is attached to the heat sink heat radiating part 3 by screws 8a to 8d.
  • the semiconductor laser 1 is formed in a cylindrical shape having a flange shape as shown.
  • the holding member 4 is formed with a hole corresponding to the shape of the light emitting surface of the semiconductor laser 1, and is attached to the heat sink heat receiving portion 2 by screws 7 a to 7 d so as to hold the flange portion of the semiconductor laser 1.
  • the heat sink heat receiving portion 2 is provided with a countersink hole 201 having the same diameter as the flange portion that is the outer diameter of the semiconductor laser 1. For this reason, the bottom surface 101 of the semiconductor laser 1 is pressed against the bottom surface 202 of the counterbore hole 201 by the pressing member 4. Further, the side surface 102 of the semiconductor laser 1 is in contact with the side surface 203 of the counterbore hole 201.
  • the counterbored hole 201 is formed with a machining R portion 204 by a tool at the time of machining, but the outer peripheral portion of the bottom surface 101 of the semiconductor laser 1 is a C surface subjected to C surface machining that cuts off a corner ridge line portion with a surface.
  • the diameter of the bottom surface 101 is made smaller than the diameter of the side surface 102 (the outer diameter of the semiconductor laser 1).
  • R-surface processing that cuts off a corner ridge line portion with a curved surface may be used. In short, it suffices if the corner ridge line portion is cut off so as not to contact the processing R portion 204. As a result, the outer peripheral portion of the bottom surface of the semiconductor laser 1 does not run over the processing R portion 204 of the counterbore 201.
  • the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201, and the side surface 102 of the semiconductor laser 1 and the side surface 203 of the countersink hole 201 can be in good contact with each other.
  • FIG. 7 is a view showing a mounting state when a semiconductor laser 1 in which the C-surface processing is not performed on the outer peripheral portion of the bottom surface is used as a comparative example.
  • the corner of the outer peripheral portion of the semiconductor laser 1 rides on the machining R portion 204 of the countersink hole. For this reason, the contact between the bottom surface 101 of the semiconductor laser 1 and the bottom surface 202 of the countersink hole 201 is deteriorated.
  • the illustrated configuration is merely an example, and the present invention is not limited to the configuration.
  • a part or all of the above-described embodiment can be described as follows, but is not limited to the following configuration.
  • (Supplementary note 1) A light-emitting element having a cylindrical shape and having a bottom diameter smaller than the outer shape.
  • (Additional remark 2) In the light emitting element of Additional remark 1, A light emitting device in which a diameter of the bottom surface is made smaller than an outer shape by performing C-plane processing by cutting off a ridge line portion that becomes a corner of the outer peripheral portion of the bottom surface.
  • Appendix 3 The light-emitting element according to Appendix 1 or Appendix 2, A heat sink having a countersink hole having the same diameter as the outer diameter of the light emitting element, A cooling structure of a light emitting element in which the light emitting element is inserted into the counterbore.
  • the projection type display apparatus provided with the light emitting element of Additional remark 1 or Additional remark 2.
  • Additional remark 5 The projection type display apparatus provided with the cooling structure of the light emitting element of Additional remark 3.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Projection Apparatus (AREA)

Abstract

La présente invention concerne un élément électroluminescent qui est inséré dans un trou à contre-alésage formé dans un dissipateur thermique et dont la surface inférieure et une surface latérale viennent avantageusement en contact avec le dissipateur thermique. L'élément électroluminescent ayant une forme colonnaire et ayant un diamètre de face inférieure plus petit que sa forme externe, est inséré dans un trou à contre-alésage formé dans un dissipateur thermique et ayant le même diamètre que le diamètre externe de l'élément électroluminescent.
PCT/JP2016/058682 2016-03-18 2016-03-18 Élément électroluminescent, structure et procédé de refroidissement d'élément électroluminescent, et dispositif d'affichage par projection WO2017158816A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2016/058682 WO2017158816A1 (fr) 2016-03-18 2016-03-18 Élément électroluminescent, structure et procédé de refroidissement d'élément électroluminescent, et dispositif d'affichage par projection
CN201690001276.4U CN208571224U (zh) 2016-03-18 2016-03-18 发光元件、发光元件的冷却结构以及投影型显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/058682 WO2017158816A1 (fr) 2016-03-18 2016-03-18 Élément électroluminescent, structure et procédé de refroidissement d'élément électroluminescent, et dispositif d'affichage par projection

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WO2017158816A1 true WO2017158816A1 (fr) 2017-09-21

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395244U (fr) * 1986-12-11 1988-06-20
JPH11261164A (ja) * 1998-03-13 1999-09-24 Hitachi Ltd レーザダイオード・モジュールおよびその製造方法ならびにレーザダイオード
JP2004128378A (ja) * 2002-10-07 2004-04-22 Sharp Corp 半導体レーザ装置およびその製造方法
JP2005011926A (ja) * 2003-06-18 2005-01-13 Matsushita Electric Ind Co Ltd 光半導体装置用気密端子
JP2012079827A (ja) * 2010-09-30 2012-04-19 Panasonic Corp 半導体発光装置及び光源装置
JP2012083522A (ja) * 2010-10-12 2012-04-26 Sony Corp 照明装置、投影型表示装置、直視型表示装置
JP2013138086A (ja) * 2011-12-28 2013-07-11 Nichia Chem Ind Ltd 光源装置
US20130256736A1 (en) * 2010-09-20 2013-10-03 Osram Opto Semiconductors Gmbh Package for an Optoelectronic Semiconductor Component and Semiconductor Component
JP2014027307A (ja) * 2011-11-30 2014-02-06 Panasonic Corp 窒化物半導体発光装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395244U (fr) * 1986-12-11 1988-06-20
JPH11261164A (ja) * 1998-03-13 1999-09-24 Hitachi Ltd レーザダイオード・モジュールおよびその製造方法ならびにレーザダイオード
JP2004128378A (ja) * 2002-10-07 2004-04-22 Sharp Corp 半導体レーザ装置およびその製造方法
JP2005011926A (ja) * 2003-06-18 2005-01-13 Matsushita Electric Ind Co Ltd 光半導体装置用気密端子
US20130256736A1 (en) * 2010-09-20 2013-10-03 Osram Opto Semiconductors Gmbh Package for an Optoelectronic Semiconductor Component and Semiconductor Component
JP2012079827A (ja) * 2010-09-30 2012-04-19 Panasonic Corp 半導体発光装置及び光源装置
JP2012083522A (ja) * 2010-10-12 2012-04-26 Sony Corp 照明装置、投影型表示装置、直視型表示装置
JP2014027307A (ja) * 2011-11-30 2014-02-06 Panasonic Corp 窒化物半導体発光装置
JP2013138086A (ja) * 2011-12-28 2013-07-11 Nichia Chem Ind Ltd 光源装置

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