JP3128613U - Light emitting diode - Google Patents

Light emitting diode Download PDF

Info

Publication number
JP3128613U
JP3128613U JP2006008868U JP2006008868U JP3128613U JP 3128613 U JP3128613 U JP 3128613U JP 2006008868 U JP2006008868 U JP 2006008868U JP 2006008868 U JP2006008868 U JP 2006008868U JP 3128613 U JP3128613 U JP 3128613U
Authority
JP
Japan
Prior art keywords
insulating substrate
led chip
emitting diode
heat dissipation
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006008868U
Other languages
Japanese (ja)
Inventor
俊男 嶋田
篤 神戸
利道 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okaya Electric Industry Co Ltd
Original Assignee
Okaya Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okaya Electric Industry Co Ltd filed Critical Okaya Electric Industry Co Ltd
Priority to JP2006008868U priority Critical patent/JP3128613U/en
Application granted granted Critical
Publication of JP3128613U publication Critical patent/JP3128613U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Abstract

【課題】LEDチップの発熱を効率良く放熱することができる放熱特性に優れた発光ダイオードを実現する。
【解決手段】表面にLEDチップ20を配置した白色セラミック等より成る絶縁基板12を、熱伝導性が良好な材料で構成した放熱部材32の本体部34に形成した凹部36内に収納し、以て、上記絶縁基板12の底面及び側面が放熱部材32と接触するよう構成した発光ダイオード10。
上記放熱部材32の構成材料としては、例えば、アルミニウムが該当する。
【選択図】図1
A light emitting diode having excellent heat dissipation characteristics that can efficiently dissipate heat generated by an LED chip is realized.
An insulating substrate 12 made of white ceramic or the like having an LED chip 20 disposed on the surface thereof is housed in a recess 36 formed in a main body 34 of a heat dissipation member 32 made of a material having good thermal conductivity. The light emitting diode 10 is configured such that the bottom surface and side surfaces of the insulating substrate 12 are in contact with the heat dissipation member 32.
The constituent material of the heat radiating member 32 corresponds to, for example, aluminum.
[Selection] Figure 1

Description

この考案は、発光ダイオードチップ(LEDチップ)の発熱を効率良く放熱することができる放熱特性に優れた発光ダイオード(LED)に関する。   The present invention relates to a light emitting diode (LED) having excellent heat dissipation characteristics that can efficiently dissipate heat generated from a light emitting diode chip (LED chip).

図10は、従来のLEDを示すものであり、このLED60は、絶縁基板62の表面に、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ64を形成して成る。   FIG. 10 shows a conventional LED. The LED 60 is provided with a substantially funnel-shaped recess whose diameter gradually increases upward from the bottom surface of the insulating substrate 62 and reflects the inner surface of the recess. A reflector 64 is formed on the surface.

上記絶縁基板62の表面には、第1の導体パターン66と第2の導体パターン68とが相互に絶縁状態で被着形成されており、上記リフレクタ64の底面において、LEDチップ70を第1の導体パターン66にダイボンドすることにより、上記第1の導体パターン66と、LEDチップ66底面の一方の電極(図示せず)とを電気的に接続している。また、第2の導体パターン68と、上記LEDチップ70上面の他方の電極(図示せず)とをボンディングワイヤ72を介して電気的に接続して成る。   On the surface of the insulating substrate 62, a first conductor pattern 66 and a second conductor pattern 68 are formed so as to be insulated from each other, and the LED chip 70 is attached to the first bottom surface of the reflector 64 on the first surface. The first conductor pattern 66 and one electrode (not shown) on the bottom surface of the LED chip 66 are electrically connected by die-bonding to the conductor pattern 66. In addition, the second conductor pattern 68 and the other electrode (not shown) on the upper surface of the LED chip 70 are electrically connected via a bonding wire 72.

上記第1の導体パターン66には第1のリードフレーム74が接続され、第2の導体パターン68には第2のリードフレーム76が接続されている。第1のリードフレーム74及び第2のリードフレーム76は、絶縁基板62の表面から側面を通って絶縁基板62の外方へ延設されている。
また、上記絶縁基板62の表面は、先端に凸レンズ部78を有する透光性の蓋部材80によって封止されている。
A first lead frame 74 is connected to the first conductor pattern 66, and a second lead frame 76 is connected to the second conductor pattern 68. The first lead frame 74 and the second lead frame 76 are extended from the surface of the insulating substrate 62 to the outside of the insulating substrate 62 through the side surfaces.
Further, the surface of the insulating substrate 62 is sealed with a translucent lid member 80 having a convex lens portion 78 at the tip.

而して、上記第1のリードフレーム74及び第2のリードフレーム76を介してLEDチップ70に電圧が印加されると、LEDチップ70から所定波長の光が発光し、蓋部材80の凸レンズ部78によって集光されて外部へ放射されるようになっている。   Thus, when a voltage is applied to the LED chip 70 via the first lead frame 74 and the second lead frame 76, light of a predetermined wavelength is emitted from the LED chip 70, and the convex lens portion of the lid member 80 The light is condensed by 78 and radiated to the outside.

上記した従来のLED60にあっては、LED60を長時間駆動させたり、発光輝度を高めるために高電流駆動させた場合には、LEDチップ70が著しく発熱して高温状態となり、LEDチップ70の熱劣化を生じていた。   In the conventional LED 60 described above, when the LED 60 is driven for a long time or is driven at a high current in order to increase the light emission luminance, the LED chip 70 generates heat and becomes a high temperature state. It was causing deterioration.

本考案は、上記従来の問題点に鑑みてなされたものであり、その目的は、LEDチップの発熱を効率良く放熱することができる放熱特性に優れた発光ダイオードを実現することにある。   The present invention has been made in view of the above-described conventional problems, and an object thereof is to realize a light emitting diode excellent in heat dissipation characteristics that can efficiently dissipate heat generated by an LED chip.

上記の目的を達成するため、本考案に係る発光ダイオードは、表面にLEDチップを配置した絶縁基板を、熱伝導性が良好な材料で構成した放熱部材の本体部に形成した凹部内に収納し、以て、上記絶縁基板の底面及び側面が放熱部材と接触するよう構成したことを特徴とする。
上記放熱部材の本体部が、底面及び側周面を有する構造と成し、該底面及び/又は側周面を、他の放熱部材に接触させることにより、上記LEDチップの発熱を放熱可能と成しても良い。
上記放熱部材は、例えば、アルミニウムで構成することができる。
In order to achieve the above object, a light emitting diode according to the present invention includes an insulating substrate having an LED chip disposed on a surface thereof in a recess formed in a main body of a heat dissipation member made of a material having good thermal conductivity. Thus, the bottom surface and the side surface of the insulating substrate are configured to come into contact with the heat radiating member.
The main body portion of the heat radiating member has a structure having a bottom surface and a side peripheral surface, and the bottom surface and / or the side peripheral surface is brought into contact with another heat radiating member so that the heat generated by the LED chip can be dissipated. You may do it.
The heat radiating member can be made of aluminum, for example.

本考案の発光ダイオードにあっては、表面にLEDチップを配置した絶縁基板を、熱伝導性が良好な材料で構成した放熱部材の本体部に形成した凹部内に収納すると、絶縁基板の底面及び側面が放熱部材と接触するため、LEDチップの発熱が、絶縁基板を介して放熱部材へと伝導して発光ダイオード外部へ効率良く放熱することができ、放熱特性が良好である。
上記放熱部材の本体部が、底面及び側周面を有する構造と成した場合に、該底面及び/又は側周面を、他の放熱部材に接触させることにより、上記LEDチップの発熱を他の放熱部材へと放熱することができる。
In the light emitting diode of the present invention, when the insulating substrate having the LED chip disposed on the surface thereof is housed in the recess formed in the main body portion of the heat dissipation member made of a material having good thermal conductivity, the bottom surface of the insulating substrate and Since the side surface is in contact with the heat radiating member, the heat generated by the LED chip can be conducted to the heat radiating member through the insulating substrate and efficiently radiated to the outside of the light emitting diode, and the heat radiating characteristics are good.
When the main body portion of the heat dissipation member has a structure having a bottom surface and a side peripheral surface, the bottom surface and / or the side peripheral surface is brought into contact with another heat dissipation member, thereby generating heat generated by the LED chip. It is possible to radiate heat to the heat radiating member.

以下、図面に基づき、本考案に係るLED10の実施形態を説明する。
図1は、本考案に係るLED10を模式的に示す概略断面図、図2は、本考案に係るLED10を模式的に示す平面図、図3は、図1のA−A概略断面図である。
本考案のLED10は、白色セラミックより成る絶縁基板12の表面に、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ14を形成して成る。
Hereinafter, embodiments of the LED 10 according to the present invention will be described with reference to the drawings.
1 is a schematic cross-sectional view schematically showing an LED 10 according to the present invention, FIG. 2 is a plan view schematically showing the LED 10 according to the present invention, and FIG. 3 is a schematic cross-sectional view taken along line AA of FIG. .
The LED 10 of the present invention is provided with a substantially funnel-shaped recess whose diameter gradually increases upward from its bottom surface on the surface of an insulating substrate 12 made of white ceramic, and the inner surface of the recess serves as a reflecting surface. Formed.

上記絶縁基板12の表面には、第1の導体パターン16と第2の導体パターン18とが相互に絶縁状態で被着形成されており、上記リフレクタ14の底面において、LEDチップ20を第1の導体パターン16にダイボンドすることにより、上記第1の導体パターン16と、LEDチップ20底面の一方の電極(図示せず)とを電気的に接続している。また、第2の導体パターン18と、上記LEDチップ20上面の他方の電極(図示せず)とをボンディングワイヤ22を介して電気的に接続して成る。
上記LEDチップ20は、電圧が印加されると所定波長の光を発光し、例えば、窒化ガリウム系半導体結晶で構成されている。
A first conductor pattern 16 and a second conductor pattern 18 are formed on the surface of the insulating substrate 12 so as to be insulated from each other. The LED chip 20 is mounted on the bottom surface of the reflector 14 with the first conductor pattern 16. By die-bonding to the conductor pattern 16, the first conductor pattern 16 and one electrode (not shown) on the bottom surface of the LED chip 20 are electrically connected. In addition, the second conductor pattern 18 and the other electrode (not shown) on the upper surface of the LED chip 20 are electrically connected via a bonding wire 22.
The LED chip 20 emits light of a predetermined wavelength when a voltage is applied, and is made of, for example, a gallium nitride based semiconductor crystal.

上記第1の導体パターン16には第1のリードフレーム24が接続され、第2の導体パターン18には第2のリードフレーム26が接続されている。この結果、第1の導体パターン16を介してLEDチップ20の一方の電極(図示せず)と第1のリードフレーム24とが電気的に接続され、第2の導体パターン18を介してLEDチップ20の他方の電極(図示せず)と第2のリードフレーム26とが電気的に接続される。
第1のリードフレーム24及び第2のリードフレーム26は、絶縁基板12の外方へ向かって水平方向に取り出されている。
また、上記絶縁基板12の表面は、先端に凸レンズ部28を有する透光性の蓋部材30によって封止されている。
A first lead frame 24 is connected to the first conductor pattern 16, and a second lead frame 26 is connected to the second conductor pattern 18. As a result, one electrode (not shown) of the LED chip 20 and the first lead frame 24 are electrically connected through the first conductor pattern 16, and the LED chip is connected through the second conductor pattern 18. The other electrode 20 (not shown) and the second lead frame 26 are electrically connected.
The first lead frame 24 and the second lead frame 26 are taken out in the horizontal direction toward the outside of the insulating substrate 12.
Further, the surface of the insulating substrate 12 is sealed with a translucent lid member 30 having a convex lens portion 28 at the tip.

図1乃至図3において、32は放熱部材であり、該放熱部材32は熱伝導性が良好なアルミニウム等の材料で構成されており、図4乃至図7に示すように、底面34a及び側周面34bを有する略円盤状の本体部34に、上記絶縁基板12を収納するための凹部36を形成すると共に、上記本体部34を上端から下端に至るまで切欠いて形成した一対の切欠部38を有している。
上記切欠部38は、上記第1の導体パターン16及び第2の導体パターン18と接続された第1のリードフレーム24及び第2のリードフレーム26の絶縁基板12からの取出箇所と対応する位置に形成されており(図2参照)、第1のリードフレーム24及び第2のリードフレーム26より幅広と成されている。
1 to 3, reference numeral 32 denotes a heat radiating member, and the heat radiating member 32 is made of a material such as aluminum having good thermal conductivity. As shown in FIGS. 4 to 7, the bottom surface 34a and the side periphery are formed. A substantially disc-shaped main body 34 having a surface 34b is formed with a recess 36 for housing the insulating substrate 12, and a pair of notches 38 formed by cutting the main body 34 from the upper end to the lower end. Have.
The notch 38 is located at a position corresponding to a position where the first lead frame 24 and the second lead frame 26 connected to the first conductor pattern 16 and the second conductor pattern 18 are extracted from the insulating substrate 12. The first lead frame 24 and the second lead frame 26 are wider than the first lead frame 24 and the second lead frame 26 (see FIG. 2).

図1及び図3に示すように、放熱部材32の凹部36に上記絶縁基板12を収納すると、絶縁基板12の底面と、上記切欠部38と対応する箇所を除く絶縁基板12の側面が放熱部材32と接触することとなる。   As shown in FIGS. 1 and 3, when the insulating substrate 12 is housed in the recess 36 of the heat radiating member 32, the bottom surface of the insulating substrate 12 and the side surface of the insulating substrate 12 excluding the portion corresponding to the notch 38 are the heat radiating member. Will be in contact with 32.

而して、上記第1のリードフレーム24及び第2のリードフレーム26を介してLEDチップ20に電圧が印加されると、LEDチップ20から所定波長の光が発光し、蓋部材30の凸レンズ部28によって集光されて外部へ放射されるようになっている。   Thus, when a voltage is applied to the LED chip 20 via the first lead frame 24 and the second lead frame 26, light of a predetermined wavelength is emitted from the LED chip 20, and the convex lens portion of the lid member 30 It is condensed by 28 and radiated to the outside.

本考案のLED10にあっては、表面にLEDチップ20が配置された絶縁基板12を、放熱部材32の凹部36内に収納すると、絶縁基板12の底面と側面が放熱部材32と接触するため、LEDチップ20の発熱が、絶縁基板12を介して放熱部材32へと伝導してLED10外部へ効率良く放熱することができ、放熱特性が良好である。   In the LED 10 of the present invention, when the insulating substrate 12 having the LED chip 20 disposed on the surface thereof is housed in the recess 36 of the heat dissipation member 32, the bottom surface and the side surface of the insulating substrate 12 come into contact with the heat dissipation member 32. The heat generated by the LED chip 20 can be conducted to the heat radiating member 32 through the insulating substrate 12, and can be efficiently radiated to the outside of the LED 10, and the heat radiation characteristics are good.

本考案の上記放熱部材32に一対の切欠部38を形成したのは、導体パターン16,18を介してLEDチップ20に接続されたリードフレーム24,26の取出し方向の自由度を高めるためである。
すなわち、放熱部材32の切欠部38は、上記の通り、第1のリードフレーム24及び第2のリードフレーム26の絶縁基板12からの取出箇所と対応する位置に形成されると共に、第1のリードフレーム24及び第2のリードフレーム26より幅広と成されていることから、切欠部38内において、リードフレーム24,26を屈曲させて所望の方向へ取出すことができる。
The reason why the pair of notches 38 are formed in the heat radiating member 32 of the present invention is to increase the degree of freedom of the lead frames 24 and 26 connected to the LED chip 20 via the conductor patterns 16 and 18. .
That is, the notch 38 of the heat radiating member 32 is formed at a position corresponding to the position where the first lead frame 24 and the second lead frame 26 are taken out from the insulating substrate 12 as described above, and the first lead Since it is wider than the frame 24 and the second lead frame 26, the lead frames 24 and 26 can be bent and taken out in a desired direction in the notch 38.

例えば、図8に示すように、リードフレーム24,26を切欠部38内において、絶縁基板12及び放熱部材32の本体部34の側周面34bに沿うよう下方に屈曲させた後、放熱部材32の底面と略面一となるよう放熱部材32外方へ90度屈曲させれば、リードフレーム24,26を回路基板(図示せず)等へ表面実装することが可能となる。この場合、放熱部材32の本体部34の底面34aを、他の放熱部材(図示省略)上に載置することにより本体部底面34aを他の放熱部材に接触させれば、LEDチップ20の発熱を、放熱部材32を介して、他の放熱部材へと効率良く放熱することができる。
また、図9に示すように、リードフレーム24,26を切欠部38内において、絶縁基板12及び放熱部材32の本体部34の側周面34bに沿うよう屈曲させて垂直下方向に取り出せば、放熱パイプ(他の放熱部材)の筒状体40内部に収納して使用することができる。この場合、放熱部材32の本体部34の側周面34bを、放熱パイプの筒状体40の内周面と接触させることにより、LEDチップ20の発熱を、放熱部材32を介して、放熱パイプへと効率良く放熱することができる。
For example, as shown in FIG. 8, the lead frames 24 and 26 are bent downward along the side peripheral surface 34 b of the main body 34 of the insulating substrate 12 and the heat radiating member 32 in the notch 38, and then the heat radiating member 32. The lead frames 24 and 26 can be surface-mounted on a circuit board (not shown) or the like by bending the heat dissipating member 32 outward by 90 degrees so as to be substantially flush with the bottom surface. In this case, if the bottom surface 34a of the main body portion 34 of the heat radiating member 32 is placed on another heat radiating member (not shown) to bring the main body portion bottom surface 34a into contact with the other heat radiating member, the LED chip 20 generates heat. Can be efficiently radiated to another heat radiating member via the heat radiating member 32.
Further, as shown in FIG. 9, if the lead frames 24 and 26 are bent along the side peripheral surface 34b of the body portion 34 of the insulating substrate 12 and the heat radiating member 32 in the cutout portion 38 and taken out vertically downward, It can be used by being housed in the tubular body 40 of the heat radiating pipe (other heat radiating member). In this case, by bringing the side peripheral surface 34b of the main body 34 of the heat radiating member 32 into contact with the inner peripheral surface of the tubular body 40 of the heat radiating pipe, the heat generated by the LED chip 20 is radiated through the heat radiating member 32. Heat can be efficiently dissipated.

本考案に係る発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the light emitting diode which concerns on this invention. 本考案に係る発光ダイオードを模式的に示す平面図である。It is a top view which shows typically the light emitting diode which concerns on this invention. 図1のA−A概略断面図である。It is an AA schematic sectional drawing of FIG. 本考案に係る放熱部材を模式的に示す正面図である。It is a front view showing typically the heat dissipation member concerning the present invention. 本考案に係る放熱部材を模式的に示す平面図である。It is a top view which shows typically the heat radiating member which concerns on this invention. 図4のB−B概略断面図である。It is BB schematic sectional drawing of FIG. 図6のC−C概略断面図である。It is CC schematic sectional drawing of FIG. 本考案に係る発光ダイオードのリードフレームの取出し方向を変化させた状態を模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the state which changed the taking-out direction of the lead frame of the light emitting diode which concerns on this invention. 本考案に係る発光ダイオードのリードフレームの取出し方向を変化させた状態を模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the state which changed the taking-out direction of the lead frame of the light emitting diode which concerns on this invention. 従来の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows the conventional light emitting diode typically.

符号の説明Explanation of symbols

10 発光ダイオード
12 絶縁基板
14 リフレクタ
16 第1の導体パターン
18 第2の導体パターン
20 LEDチップ
22 ボンディングワイヤ
24 第1のリードフレーム
26 第2のリードフレーム
30 蓋部材
32 放熱部材
34 放熱部材の本体部
36 放熱部材の凹部
38 放熱部材の切欠部
10 Light emitting diode
12 Insulating substrate
14 Reflector
16 First conductor pattern
18 Second conductor pattern
20 LED chip
22 Bonding wire
24 First lead frame
26 Second lead frame
30 Lid member
32 Heat dissipation member
34 Heat sink member body
36 Concave part of heat dissipation member
38 Notch in heat dissipation member

Claims (3)

表面にLEDチップを配置した絶縁基板を、熱伝導性が良好な材料で構成した放熱部材の本体部に形成した凹部内に収納し、以て、上記絶縁基板の底面及び側面が放熱部材と接触するよう構成したことを特徴とする発光ダイオード。   The insulating substrate having the LED chip disposed on the surface is housed in a recess formed in the main body of the heat dissipation member made of a material having good thermal conductivity, so that the bottom surface and the side surface of the insulating substrate are in contact with the heat dissipation member. A light emitting diode characterized by comprising: 上記放熱部材の本体部は、底面及び側周面を有しており、該底面及び/又は側周面を、他の放熱部材に接触させることにより、上記LEDチップの発熱を放熱可能と成されていることを特徴とする請求項1に記載の発光ダイオード。   The main body part of the heat dissipation member has a bottom surface and a side peripheral surface, and the heat generation of the LED chip can be dissipated by bringing the bottom surface and / or the side peripheral surface into contact with another heat dissipation member. The light-emitting diode according to claim 1. 上記放熱部材がアルミニウムで構成されていることを特徴とする請求項1又は2に記載の発光ダイオード。   The light-emitting diode according to claim 1, wherein the heat dissipating member is made of aluminum.
JP2006008868U 2006-10-31 2006-10-31 Light emitting diode Expired - Fee Related JP3128613U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006008868U JP3128613U (en) 2006-10-31 2006-10-31 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006008868U JP3128613U (en) 2006-10-31 2006-10-31 Light emitting diode

Publications (1)

Publication Number Publication Date
JP3128613U true JP3128613U (en) 2007-01-18

Family

ID=43279627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006008868U Expired - Fee Related JP3128613U (en) 2006-10-31 2006-10-31 Light emitting diode

Country Status (1)

Country Link
JP (1) JP3128613U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039865B2 (en) 2009-03-10 2011-10-18 Lg Innotek Co., Ltd. Light emitting apparatus, and method for manufacturing the same, and lighting system
US8610141B2 (en) 2010-04-15 2013-12-17 Liquid Design Systems, Inc. Three-dimensional LED substrate and LED lighting device
JP2015115563A (en) * 2013-12-16 2015-06-22 三菱電機株式会社 Video display unit and light-emitting device
US9755115B2 (en) 2007-03-15 2017-09-05 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9755115B2 (en) 2007-03-15 2017-09-05 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US9966504B2 (en) 2007-03-15 2018-05-08 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US8039865B2 (en) 2009-03-10 2011-10-18 Lg Innotek Co., Ltd. Light emitting apparatus, and method for manufacturing the same, and lighting system
US8294176B2 (en) 2009-03-10 2012-10-23 Lg Innotek Co., Ltd. Light emitting apparatus, and method for manufacturing the same, and lighting system
US8610141B2 (en) 2010-04-15 2013-12-17 Liquid Design Systems, Inc. Three-dimensional LED substrate and LED lighting device
JP2015115563A (en) * 2013-12-16 2015-06-22 三菱電機株式会社 Video display unit and light-emitting device

Similar Documents

Publication Publication Date Title
KR101241650B1 (en) Package of light emitting diode
JP4808550B2 (en) Light emitting diode light source device, lighting device, display device, and traffic signal device
JP2006313896A (en) Light emitting element package
JP2002252373A (en) Surface-mounted type light-emitting element and light emission device using the same
JP2007035802A (en) Light-emitting device
JP3138795U (en) Semiconductor light emitting device and planar light source using semiconductor light emitting device
JP2009104998A (en) Light source device
JP2009037796A (en) Light source and illuminating device
JP2012238830A (en) Light emitting diode element
JP2006344717A (en) Light-emitting device and its manufacturing method
JP4353042B2 (en) Semiconductor light emitting device
JP2007088078A (en) Light-emitting device
JP3128613U (en) Light emitting diode
KR101018119B1 (en) LED package
JP2003115615A (en) Light emitting diode device
JP4679917B2 (en) Semiconductor light emitting device
JP2007266246A (en) Led module
KR100983252B1 (en) Led panel with heat sink
JP3157844U (en) Semiconductor element
KR20120001189A (en) Light emitting diode package
JP3128614U (en) Light emitting diode
JP2007080867A (en) Light emitting device
JP2009099823A (en) Light-emitting device
US11158777B2 (en) LED light source
KR100749666B1 (en) Side view type led package with heat sink protrusion

Legal Events

Date Code Title Description
R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20101220

LAPS Cancellation because of no payment of annual fees