JP2004536453A - 磁歪センサ用のバーバー・ポール構造 - Google Patents

磁歪センサ用のバーバー・ポール構造 Download PDF

Info

Publication number
JP2004536453A
JP2004536453A JP2003514274A JP2003514274A JP2004536453A JP 2004536453 A JP2004536453 A JP 2004536453A JP 2003514274 A JP2003514274 A JP 2003514274A JP 2003514274 A JP2003514274 A JP 2003514274A JP 2004536453 A JP2004536453 A JP 2004536453A
Authority
JP
Japan
Prior art keywords
depositing
magnetostrictive
strip
barber pole
thermal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2003514274A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004536453A5 (enExample
Inventor
ウィトクラフト，ウィリアム・エフ
イェー，トム
ング，メー・ダブリュー
バーグ，ロニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2004536453A publication Critical patent/JP2004536453A/ja
Publication of JP2004536453A5 publication Critical patent/JP2004536453A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail
    • Y10T428/1186—Magnetic recording head with defined laminate structural detail with head pole component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component
    • Y10T428/12958—Next to Fe-base component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP2003514274A 2001-07-19 2002-07-16 磁歪センサ用のバーバー・ポール構造 Ceased JP2004536453A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/908,834 US6850057B2 (en) 2001-07-19 2001-07-19 Barber pole structure for magnetoresistive sensors and method of forming same
PCT/US2002/022626 WO2003008987A1 (en) 2001-07-19 2002-07-16 Barber pole structure for magnetorestrictive sensors

Publications (2)

Publication Number Publication Date
JP2004536453A true JP2004536453A (ja) 2004-12-02
JP2004536453A5 JP2004536453A5 (enExample) 2006-01-05

Family

ID=25426296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003514274A Ceased JP2004536453A (ja) 2001-07-19 2002-07-16 磁歪センサ用のバーバー・ポール構造

Country Status (4)

Country Link
US (1) US6850057B2 (enExample)
EP (1) EP1407282A1 (enExample)
JP (1) JP2004536453A (enExample)
WO (1) WO2003008987A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7265543B2 (en) * 2003-04-15 2007-09-04 Honeywell International Inc. Integrated set/reset driver and magneto-resistive sensor
US7206693B2 (en) * 2003-04-15 2007-04-17 Honeywell International Inc. Method and apparatus for an integrated GPS receiver and electronic compassing sensor device
US7239000B2 (en) * 2003-04-15 2007-07-03 Honeywell International Inc. Semiconductor device and magneto-resistive sensor integration
US7126330B2 (en) * 2004-06-03 2006-10-24 Honeywell International, Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US7420365B2 (en) * 2006-03-15 2008-09-02 Honeywell International Inc. Single chip MR sensor integrated with an RF transceiver
EP2360489B1 (en) * 2010-02-04 2013-04-17 Nxp B.V. Magnetic field sensor
IT1403433B1 (it) 2010-12-27 2013-10-17 St Microelectronics Srl Sensore magnetoresistivo con capacita' parassita ridotta, e metodo
IT1403434B1 (it) 2010-12-27 2013-10-17 St Microelectronics Srl Sensore di campo magnetico avente elementi magnetoresistivi anisotropi, con disposizione perfezionata di relativi elementi di magnetizzazione
US20140347047A1 (en) * 2011-02-22 2014-11-27 Voltafield Technology Corporation Magnetoresistive sensor
US20130113473A1 (en) * 2011-11-04 2013-05-09 Sae Magnetics (H.K.) Magnetic sensor with shunting layers and manufacturing method thereof
US9817087B2 (en) * 2012-03-14 2017-11-14 Analog Devices, Inc. Sensor with magnetroesitive and/or thin film element abutting shorting bars and a method of manufacture thereof
EP2813859B1 (en) 2013-06-12 2016-03-23 Nxp B.V. Manufacturing magnetic sensor elements monolithically integrated at a semiconductor chip comprising an integrated circuit
US9013838B1 (en) 2013-10-01 2015-04-21 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US8848320B1 (en) 2013-10-01 2014-09-30 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US8885302B1 (en) 2013-10-01 2014-11-11 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US11719772B2 (en) * 2020-04-01 2023-08-08 Analog Devices International Unlimited Company AMR (XMR) sensor with increased linear range

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219683A (ja) * 1990-01-25 1991-09-27 Fujitsu Ltd 磁気抵抗素子
JPH03219682A (ja) * 1990-01-24 1991-09-27 Fujitsu Ltd 磁気抵抗素子
JPH04255276A (ja) * 1991-02-07 1992-09-10 Fujitsu Ltd 磁気抵抗素子
JPH10275314A (ja) * 1997-04-01 1998-10-13 Nec Corp 磁気抵抗効果型ヘッド
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847584A (en) * 1988-10-14 1989-07-11 Honeywell Inc. Magnetoresistive magnetic sensor
DE4436876A1 (de) 1994-10-15 1996-04-18 Lust Antriebstechnik Gmbh Sensorchip
DE19740408A1 (de) 1996-09-09 1998-03-12 H Schiebel Elektronische Gerae Magnetfeldsensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219682A (ja) * 1990-01-24 1991-09-27 Fujitsu Ltd 磁気抵抗素子
JPH03219683A (ja) * 1990-01-25 1991-09-27 Fujitsu Ltd 磁気抵抗素子
JPH04255276A (ja) * 1991-02-07 1992-09-10 Fujitsu Ltd 磁気抵抗素子
JPH10275314A (ja) * 1997-04-01 1998-10-13 Nec Corp 磁気抵抗効果型ヘッド
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子

Also Published As

Publication number Publication date
US6850057B2 (en) 2005-02-01
WO2003008987A1 (en) 2003-01-30
EP1407282A1 (en) 2004-04-14
US20030016011A1 (en) 2003-01-23

Similar Documents

Publication Publication Date Title
JP2004536453A (ja) 磁歪センサ用のバーバー・ポール構造
EP2110867A1 (en) Magnetic sensor element and method for manufacturing the same
TW201228058A (en) Magnetic sensor and fabricating method thereof
TW201235685A (en) Magnetic sensor and fabricating method thereof
US20150091559A1 (en) Anisotropic magnetoresistive (amr) sensors and techniques for fabricating same
US6700371B2 (en) Three dimensional conductive strap for a magnetorestrictive sensor
JP3651104B2 (ja) 磁気トンネリング接合素子
JP2007242989A (ja) 磁気センサ、その製造方法および電子機器
EP1002236A2 (en) Magnetic field sensor
JP2009123818A (ja) 磁気センサデバイスの製造方法
US5886523A (en) Magnetic field responsive device having giant magnetoresistive material and method for forming the same
US7268543B2 (en) Device for detecting magnetic fields and related detecting methods
JP3590768B2 (ja) 垂直通電型磁気抵抗効果素子の製造方法
JP3617175B2 (ja) 磁気トンネリング接合素子
JP2008166633A (ja) 磁気センサデバイスの製造方法
JP3590291B2 (ja) 磁気抵抗素子
JP4474835B2 (ja) 磁気インピーダンス素子
JPH03283477A (ja) 磁気抵抗効果素子とその製造方法
JPH07249807A (ja) 磁気抵抗効果素子
CN118696626A (zh) 传感器元件及其制造方法
JPH03219682A (ja) 磁気抵抗素子
JP2002270918A (ja) 磁気インピーダンス素子
JPS5872071A (ja) 薄膜磁気センサ
JP2004172431A (ja) 磁気インピーダンス素子
JPH06291389A (ja) 抵抗素子及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050614

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090422

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100408

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20100819