JP2004535066A - ナノスケールワイヤ及び関連デバイス - Google Patents

ナノスケールワイヤ及び関連デバイス Download PDF

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Publication number
JP2004535066A
JP2004535066A JP2003511316A JP2003511316A JP2004535066A JP 2004535066 A JP2004535066 A JP 2004535066A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2004535066 A JP2004535066 A JP 2004535066A
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Prior art keywords
semiconductor
article
doped
wire
less
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Japanese (ja)
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JP2004535066A5 (fr
Inventor
リーバー，チャールズ・エム
デュアン，シャンフェン
クイ，イ
フアン，ユ
グディクセン，マーク・エス
ラウホン，リンカーン・ジェイ
ウォン，ジャンファン
パーク，ホンクン
ウェイ，チンチャオ
リャン，ウェンジー
スミス，デーヴィッド・シー
ウォン，デリ
チョン，チャオフイ
Original Assignee
プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
ユニバーシティ・オブ・サザンプトン
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Priority claimed from US09/935,776 external-priority patent/US20020130311A1/en
Priority claimed from US10/020,004 external-priority patent/US7129554B2/en
Application filed by プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ, ユニバーシティ・オブ・サザンプトン filed Critical プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
Publication of JP2004535066A publication Critical patent/JP2004535066A/ja
Publication of JP2004535066A5 publication Critical patent/JP2004535066A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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    • H01L29/068—Nanowires or nanotubes comprising a junction
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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JP2003511316A 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス Pending JP2004535066A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US29203501P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US29204501P 2001-05-18 2001-05-18
US29189601P 2001-05-18 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US34831301P 2001-11-09 2001-11-09
US10/020,004 US7129554B2 (en) 2000-12-11 2001-12-11 Nanosensors
US35464202P 2002-02-06 2002-02-06
PCT/US2002/016133 WO2003005450A2 (fr) 2001-05-18 2002-05-20 Nanofils et dispositifs associes

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JP2008156094A Division JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

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JP2004535066A true JP2004535066A (ja) 2004-11-18
JP2004535066A5 JP2004535066A5 (fr) 2005-12-22

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JP2003511316A Pending JP2004535066A (ja) 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

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EP (1) EP1436841A1 (fr)
JP (2) JP2004535066A (fr)
CA (1) CA2447728A1 (fr)
WO (1) WO2003005450A2 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073556A (ja) * 2005-09-02 2007-03-22 National Institute Of Advanced Industrial & Technology 情報記録素子
WO2008105119A1 (fr) * 2007-02-27 2008-09-04 Inter-University Research Institute Corporation, National Institutes Of Natural Sciences Dispositif de détection de gaz oxygène et nanofil pour celui-ci
WO2008149548A1 (fr) * 2007-06-06 2008-12-11 Panasonic Corporation Nanofil semi-conducteur et son procédé de fabrication
JP2010024081A (ja) * 2008-07-17 2010-02-04 Nippon Telegr & Teleph Corp <Ntt> ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
JP2011192787A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 半導体記憶装置
US8198622B2 (en) 2006-12-13 2012-06-12 Panasonic Corporation Nanowire, device comprising nanowire, and their production methods
JP2012128401A (ja) * 2010-05-28 2012-07-05 Sekisui Chem Co Ltd 偏光性材料及びそれを含む偏光膜製造用塗料並びに偏光膜
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