JP2004534470A - 低ノイズ増幅回路 - Google Patents

低ノイズ増幅回路 Download PDF

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Publication number
JP2004534470A
JP2004534470A JP2003511410A JP2003511410A JP2004534470A JP 2004534470 A JP2004534470 A JP 2004534470A JP 2003511410 A JP2003511410 A JP 2003511410A JP 2003511410 A JP2003511410 A JP 2003511410A JP 2004534470 A JP2004534470 A JP 2004534470A
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JP
Japan
Prior art keywords
circuit
transistor
signal
current
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003511410A
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English (en)
Japanese (ja)
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JP2004534470A5 (enExample
Inventor
グラント アーヴィン，ロバート
プレトル，ハラルド
シュテーガー，クラウス
トーマン，ヴォルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2004534470A publication Critical patent/JP2004534470A/ja
Publication of JP2004534470A5 publication Critical patent/JP2004534470A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45616—Indexing scheme relating to differential amplifiers the IC comprising more than one switch, which are not cross coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2003511410A 2001-07-06 2002-06-19 低ノイズ増幅回路 Pending JP2004534470A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10132800A DE10132800C1 (de) 2001-07-06 2001-07-06 Rauscharme Verstärkerschaltung
PCT/DE2002/002233 WO2003005566A2 (de) 2001-07-06 2002-06-19 Rauscharme verstärkerschaltung

Publications (2)

Publication Number Publication Date
JP2004534470A true JP2004534470A (ja) 2004-11-11
JP2004534470A5 JP2004534470A5 (enExample) 2007-05-31

Family

ID=7690836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003511410A Pending JP2004534470A (ja) 2001-07-06 2002-06-19 低ノイズ増幅回路

Country Status (5)

Country Link
US (1) US7057457B2 (enExample)
EP (1) EP1407541A2 (enExample)
JP (1) JP2004534470A (enExample)
DE (1) DE10132800C1 (enExample)
WO (1) WO2003005566A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311910A (ja) * 2006-05-16 2007-11-29 Nec Electronics Corp 増幅器および負帰還増幅回路
TWI683533B (zh) * 2018-12-11 2020-01-21 立積電子股份有限公司 放大電路

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DE10300431A1 (de) * 2003-01-09 2004-07-22 Deutsche Thomson-Brandt Gmbh Regelbarer HF-Breitbandverstärker mit konstanter Eingangsimpedanz
US7298205B2 (en) * 2003-09-24 2007-11-20 Matsushita Electric Industrial Co., Ltd. Amplifier and frequency converter
US7071779B2 (en) * 2004-06-17 2006-07-04 Winbond Electronics, Corp. Monolithic CMOS differential LNA with enhanced linearity
US7454190B2 (en) * 2004-10-28 2008-11-18 Infineon Technologies Ag Receiver circuit for a receiving element
DE102005008372B4 (de) * 2005-02-23 2016-08-18 Intel Deutschland Gmbh Steuerbarer Verstärker und dessen Verwendung
EP1748553B1 (en) * 2005-07-26 2010-02-17 Austriamicrosystems AG Amplifier arrangement and method
US7443241B2 (en) * 2005-11-28 2008-10-28 Via Technologies Inc. RF variable gain amplifier
US8004365B2 (en) 2006-10-26 2011-08-23 Nxp B.V. Amplifier circuit
US7622989B2 (en) * 2007-04-30 2009-11-24 The Regents Of The University Of California Multi-band, inductor re-use low noise amplifier
US7592870B2 (en) * 2007-08-13 2009-09-22 Newport Media, Inc. Low noise, low power, high linearity differential amplifier with a capacitive input impedance
US8031005B2 (en) 2009-03-23 2011-10-04 Qualcomm, Incorporated Amplifier supporting multiple gain modes
US7969246B1 (en) 2010-03-12 2011-06-28 Samsung Electro-Mechanics Company Systems and methods for positive and negative feedback of cascode transistors for a power amplifier
GB2490976A (en) * 2011-05-19 2012-11-21 Renesas Mobile Corp LNAs adaptable between inductively degenerated and internal impedance matching configurations
GB2486515B (en) 2011-09-02 2012-11-14 Renesas Mobile Corp Apparatus and method for low noise amplification
US8432217B2 (en) * 2011-05-19 2013-04-30 Renesas Mobile Corporation Amplifier
US8427239B2 (en) 2011-09-02 2013-04-23 Renesas Mobile Corporation Apparatus and method for low noise amplification
US8378748B2 (en) 2011-05-19 2013-02-19 Renesas Mobile Corporation Amplifier
US8294515B1 (en) 2011-05-19 2012-10-23 Renesas Mobile Corporation Amplifier
US8514021B2 (en) 2011-05-19 2013-08-20 Renesas Mobile Corporation Radio frequency integrated circuit
GB2487998B (en) * 2011-05-19 2013-03-20 Renesas Mobile Corp Amplifier
GB2481487B (en) 2011-05-19 2012-08-29 Renesas Mobile Corp Amplifier
US8264282B1 (en) 2011-05-19 2012-09-11 Renesas Mobile Corporation Amplifier
CN103138725A (zh) * 2013-01-11 2013-06-05 华为技术有限公司 具有金属板电容的电路及射频开关、低噪声放大器
CN104639046A (zh) * 2013-11-06 2015-05-20 国基电子（上海）有限公司 低噪音放大器
CN104035105A (zh) * 2014-05-30 2014-09-10 深圳贝特莱电子科技有限公司 低噪声放大器及gnss系统接收机前端的射频系统
CN105281680B (zh) * 2015-10-19 2019-03-26 江苏卓胜微电子股份有限公司 带有开关的低噪声放大器及射频信号放大方法
GB2545487A (en) * 2015-12-18 2017-06-21 Nordic Semiconductor Asa Radio frequency receiver
US9716475B1 (en) * 2016-01-21 2017-07-25 Peregrine Semiconductor Corporation Programmable low noise amplifier
US11095254B1 (en) 2020-01-23 2021-08-17 Analog Devices International Unlimited Company Circuits and methods to reduce distortion in an amplifier

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940949A (en) * 1989-11-01 1990-07-10 Avantek, Inc. High efficiency high isolation amplifier
FR2714237B1 (fr) * 1993-12-17 1996-01-26 Thomson Csf Semiconducteurs Amplificateur à gain variable.
US5789799A (en) * 1996-09-27 1998-08-04 Northern Telecom Limited High frequency noise and impedance matched integrated circuits
JPH10173453A (ja) * 1996-12-09 1998-06-26 Sony Corp 高周波可変利得増幅装置および無線通信装置
DE19737062A1 (de) 1997-08-26 1999-03-04 Bosch Gmbh Robert Verfahren und Schaltungsanordnung zur Einstellung eines Arbeitspunktes einer Transistorstufe
FR2770053B1 (fr) * 1997-10-22 2000-01-07 Sgs Thomson Microelectronics Circuit amplificateur a double gain
US6127886A (en) * 1997-10-30 2000-10-03 The Whitaker Corporation Switched amplifying device
US6313706B1 (en) 1997-11-27 2001-11-06 Nec Corporation Semiconductor circuit with a stabilized gain slope
US5977828A (en) * 1997-12-12 1999-11-02 Nortel Networks Corporation Multiple-tail transconductance switchable gain amplifer
US6147559A (en) * 1998-07-30 2000-11-14 Philips Electronics North America Corporation Noise figure and linearity improvement technique using shunt feedback
US6211737B1 (en) * 1999-07-16 2001-04-03 Philips Electronics North America Corporation Variable gain amplifier with improved linearity
US6396347B1 (en) * 2001-05-03 2002-05-28 International Business Machines Corporation Low-power, low-noise dual gain amplifier topology and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311910A (ja) * 2006-05-16 2007-11-29 Nec Electronics Corp 増幅器および負帰還増幅回路
TWI683533B (zh) * 2018-12-11 2020-01-21 立積電子股份有限公司 放大電路
US11146218B2 (en) 2018-12-11 2021-10-12 Richwave Technology Corp. Amplification circuit

Also Published As

Publication number Publication date
WO2003005566A3 (de) 2004-01-22
DE10132800C1 (de) 2003-01-30
US20050068106A1 (en) 2005-03-31
EP1407541A2 (de) 2004-04-14
US7057457B2 (en) 2006-06-06
WO2003005566A2 (de) 2003-01-16

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