WO2003005566A3 - Rauscharme verstärkerschaltung - Google Patents
Rauscharme verstärkerschaltung Download PDFInfo
- Publication number
- WO2003005566A3 WO2003005566A3 PCT/DE2002/002233 DE0202233W WO03005566A3 WO 2003005566 A3 WO2003005566 A3 WO 2003005566A3 DE 0202233 W DE0202233 W DE 0202233W WO 03005566 A3 WO03005566 A3 WO 03005566A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amplifying circuit
- current path
- low
- frequency
- noise
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45616—Indexing scheme relating to differential amplifiers the IC comprising more than one switch, which are not cross coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003511410A JP2004534470A (ja) | 2001-07-06 | 2002-06-19 | 低ノイズ増幅回路 |
EP02782431A EP1407541A2 (de) | 2001-07-06 | 2002-06-19 | Rauscharme verstärkerschaltung |
US10/482,651 US7057457B2 (en) | 2001-07-06 | 2002-06-19 | Low-noise amplifying circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10132800A DE10132800C1 (de) | 2001-07-06 | 2001-07-06 | Rauscharme Verstärkerschaltung |
DE10132800.1 | 2001-07-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003005566A2 WO2003005566A2 (de) | 2003-01-16 |
WO2003005566A3 true WO2003005566A3 (de) | 2004-01-22 |
Family
ID=7690836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/002233 WO2003005566A2 (de) | 2001-07-06 | 2002-06-19 | Rauscharme verstärkerschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US7057457B2 (de) |
EP (1) | EP1407541A2 (de) |
JP (1) | JP2004534470A (de) |
DE (1) | DE10132800C1 (de) |
WO (1) | WO2003005566A2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10300431A1 (de) * | 2003-01-09 | 2004-07-22 | Deutsche Thomson-Brandt Gmbh | Regelbarer HF-Breitbandverstärker mit konstanter Eingangsimpedanz |
US7298205B2 (en) * | 2003-09-24 | 2007-11-20 | Matsushita Electric Industrial Co., Ltd. | Amplifier and frequency converter |
US7071779B2 (en) * | 2004-06-17 | 2006-07-04 | Winbond Electronics, Corp. | Monolithic CMOS differential LNA with enhanced linearity |
US7454190B2 (en) * | 2004-10-28 | 2008-11-18 | Infineon Technologies Ag | Receiver circuit for a receiving element |
DE102005008372B4 (de) * | 2005-02-23 | 2016-08-18 | Intel Deutschland Gmbh | Steuerbarer Verstärker und dessen Verwendung |
ATE458303T1 (de) * | 2005-07-26 | 2010-03-15 | Austriamicrosystems Ag | Verstärkeranordnung und methode |
US7443241B2 (en) * | 2005-11-28 | 2008-10-28 | Via Technologies Inc. | RF variable gain amplifier |
JP2007311910A (ja) * | 2006-05-16 | 2007-11-29 | Nec Electronics Corp | 増幅器および負帰還増幅回路 |
ATE540471T1 (de) | 2006-10-26 | 2012-01-15 | Nxp Bv | Verstarkerschaltung |
US7622989B2 (en) * | 2007-04-30 | 2009-11-24 | The Regents Of The University Of California | Multi-band, inductor re-use low noise amplifier |
US7592870B2 (en) * | 2007-08-13 | 2009-09-22 | Newport Media, Inc. | Low noise, low power, high linearity differential amplifier with a capacitive input impedance |
US8031005B2 (en) | 2009-03-23 | 2011-10-04 | Qualcomm, Incorporated | Amplifier supporting multiple gain modes |
US7969246B1 (en) | 2010-03-12 | 2011-06-28 | Samsung Electro-Mechanics Company | Systems and methods for positive and negative feedback of cascode transistors for a power amplifier |
US8264282B1 (en) | 2011-05-19 | 2012-09-11 | Renesas Mobile Corporation | Amplifier |
GB2487998B (en) * | 2011-05-19 | 2013-03-20 | Renesas Mobile Corp | Amplifier |
GB2486515B (en) | 2011-09-02 | 2012-11-14 | Renesas Mobile Corp | Apparatus and method for low noise amplification |
US8294515B1 (en) | 2011-05-19 | 2012-10-23 | Renesas Mobile Corporation | Amplifier |
GB2490995B (en) * | 2011-05-19 | 2013-05-15 | Renesas Mobile Corp | Radio frequency integrated circuit |
GB2481487B (en) | 2011-05-19 | 2012-08-29 | Renesas Mobile Corp | Amplifier |
US8427239B2 (en) | 2011-09-02 | 2013-04-23 | Renesas Mobile Corporation | Apparatus and method for low noise amplification |
US8514021B2 (en) | 2011-05-19 | 2013-08-20 | Renesas Mobile Corporation | Radio frequency integrated circuit |
US8432217B2 (en) * | 2011-05-19 | 2013-04-30 | Renesas Mobile Corporation | Amplifier |
US8378748B2 (en) | 2011-05-19 | 2013-02-19 | Renesas Mobile Corporation | Amplifier |
CN103138725A (zh) * | 2013-01-11 | 2013-06-05 | 华为技术有限公司 | 具有金属板电容的电路及射频开关、低噪声放大器 |
CN104639046A (zh) * | 2013-11-06 | 2015-05-20 | 国基电子(上海)有限公司 | 低噪音放大器 |
CN104035105A (zh) * | 2014-05-30 | 2014-09-10 | 深圳贝特莱电子科技有限公司 | 低噪声放大器及gnss系统接收机前端的射频系统 |
CN105281680B (zh) * | 2015-10-19 | 2019-03-26 | 江苏卓胜微电子股份有限公司 | 带有开关的低噪声放大器及射频信号放大方法 |
GB2545487A (en) * | 2015-12-18 | 2017-06-21 | Nordic Semiconductor Asa | Radio frequency receiver |
US9716475B1 (en) * | 2016-01-21 | 2017-07-25 | Peregrine Semiconductor Corporation | Programmable low noise amplifier |
TWI683533B (zh) * | 2018-12-11 | 2020-01-21 | 立積電子股份有限公司 | 放大電路 |
US11095254B1 (en) | 2020-01-23 | 2021-08-17 | Analog Devices International Unlimited Company | Circuits and methods to reduce distortion in an amplifier |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0833442A1 (de) * | 1996-09-27 | 1998-04-01 | Nortel Networks Corporation | Rausch- und Impedanzangepasste integrierte Hochfrequenzschaltkreise |
EP0847135A2 (de) * | 1996-12-09 | 1998-06-10 | Sony Corporation | Hochfrequenz-Verstärkervorrichtung mit variabler Verstärkung |
EP0899869A1 (de) * | 1997-08-26 | 1999-03-03 | Robert Bosch Gmbh | Verfahren und Schaltungsanordnung zur Einstellung eines Arbeitspunktes einer Transistorstufe |
EP0920122A2 (de) * | 1997-11-27 | 1999-06-02 | Nec Corporation | Halbleiterschaltung mit stabilisiertem Verstärkungsabfall |
US6127886A (en) * | 1997-10-30 | 2000-10-03 | The Whitaker Corporation | Switched amplifying device |
US6211737B1 (en) * | 1999-07-16 | 2001-04-03 | Philips Electronics North America Corporation | Variable gain amplifier with improved linearity |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4940949A (en) * | 1989-11-01 | 1990-07-10 | Avantek, Inc. | High efficiency high isolation amplifier |
FR2714237B1 (fr) * | 1993-12-17 | 1996-01-26 | Thomson Csf Semiconducteurs | Amplificateur à gain variable. |
FR2770053B1 (fr) * | 1997-10-22 | 2000-01-07 | Sgs Thomson Microelectronics | Circuit amplificateur a double gain |
US5977828A (en) * | 1997-12-12 | 1999-11-02 | Nortel Networks Corporation | Multiple-tail transconductance switchable gain amplifer |
US6147559A (en) * | 1998-07-30 | 2000-11-14 | Philips Electronics North America Corporation | Noise figure and linearity improvement technique using shunt feedback |
US6396347B1 (en) * | 2001-05-03 | 2002-05-28 | International Business Machines Corporation | Low-power, low-noise dual gain amplifier topology and method |
-
2001
- 2001-07-06 DE DE10132800A patent/DE10132800C1/de not_active Expired - Fee Related
-
2002
- 2002-06-19 WO PCT/DE2002/002233 patent/WO2003005566A2/de active Application Filing
- 2002-06-19 US US10/482,651 patent/US7057457B2/en not_active Expired - Fee Related
- 2002-06-19 EP EP02782431A patent/EP1407541A2/de not_active Withdrawn
- 2002-06-19 JP JP2003511410A patent/JP2004534470A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0833442A1 (de) * | 1996-09-27 | 1998-04-01 | Nortel Networks Corporation | Rausch- und Impedanzangepasste integrierte Hochfrequenzschaltkreise |
EP0847135A2 (de) * | 1996-12-09 | 1998-06-10 | Sony Corporation | Hochfrequenz-Verstärkervorrichtung mit variabler Verstärkung |
EP0899869A1 (de) * | 1997-08-26 | 1999-03-03 | Robert Bosch Gmbh | Verfahren und Schaltungsanordnung zur Einstellung eines Arbeitspunktes einer Transistorstufe |
US6127886A (en) * | 1997-10-30 | 2000-10-03 | The Whitaker Corporation | Switched amplifying device |
EP0920122A2 (de) * | 1997-11-27 | 1999-06-02 | Nec Corporation | Halbleiterschaltung mit stabilisiertem Verstärkungsabfall |
US6211737B1 (en) * | 1999-07-16 | 2001-04-03 | Philips Electronics North America Corporation | Variable gain amplifier with improved linearity |
Also Published As
Publication number | Publication date |
---|---|
DE10132800C1 (de) | 2003-01-30 |
US7057457B2 (en) | 2006-06-06 |
WO2003005566A2 (de) | 2003-01-16 |
JP2004534470A (ja) | 2004-11-11 |
US20050068106A1 (en) | 2005-03-31 |
EP1407541A2 (de) | 2004-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003005566A3 (de) | Rauscharme verstärkerschaltung | |
US7884673B2 (en) | Wideband low-noise amplifier | |
US7679452B2 (en) | Amplifier arrangement and method | |
US8558549B2 (en) | Detector circuit and semiconductor device using same | |
US6396347B1 (en) | Low-power, low-noise dual gain amplifier topology and method | |
US20050282510A1 (en) | Linear mixer with current amplifier | |
WO2003017468A3 (en) | A system and method for minimizing dissipation in rf power amplifiers | |
WO2008039503A3 (en) | Broadband low noise amplifier | |
EP0785617A3 (de) | Rausch- und verzerrungsarmer HEMT-Verstärker mit monolithischer einstellbarer HBT-aktiver Rückkopplung | |
TW200740106A (en) | Low noise amplifier and low noise amplifying method of dynamically adjusting a bias voltage when switching gain modes to improve linearity | |
CN116131770B (zh) | 一种高集成度的高线性低噪声放大器 | |
WO2002056647A3 (en) | Circuit for linearizing electronic devices | |
US7288989B2 (en) | Low-noise amplifier with a transformer | |
WO2003019774A3 (en) | High frequency power amplifier circuit | |
WO2007008457A3 (en) | High dynamic range compact mixer output stage for a wireless receiver | |
US7053717B2 (en) | Method and apparatus for realizing a low noise amplifier | |
WO2005109627A1 (en) | Amplifier bias enhancement technique | |
US7312661B2 (en) | RF power amplifier | |
WO2003075455A3 (en) | Amplifier circuits and their use in radio frequency transmitters | |
EP1349267A4 (de) | Verstärkerschaltung für am-rundfunk | |
US6864746B2 (en) | Dual gain amplification low noise amplifier | |
US20030001678A1 (en) | Semiconductor amplifier circuit | |
JPH08222973A (ja) | Rfリニア電力増幅回路および無線通信装置 | |
US7146149B1 (en) | High isolation switch buffer for frequency hopping radios | |
WO2001052403A3 (en) | Difference frequency impedance transformation circuits and methods for providing same in power amplifier systems |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003511410 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002782431 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10482651 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2002782431 Country of ref document: EP |