JP2004532515A5 - - Google Patents
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- Publication number
- JP2004532515A5 JP2004532515A5 JP2002570292A JP2002570292A JP2004532515A5 JP 2004532515 A5 JP2004532515 A5 JP 2004532515A5 JP 2002570292 A JP2002570292 A JP 2002570292A JP 2002570292 A JP2002570292 A JP 2002570292A JP 2004532515 A5 JP2004532515 A5 JP 2004532515A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- component
- substrate
- embrittleable
- embrittlement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims 32
- 239000000758 substrate Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 15
- 239000010410 layer Substances 0.000 claims 13
- 239000000463 material Substances 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 238000000926 separation method Methods 0.000 claims 4
- 239000005350 fused silica glass Substances 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 229920003023 plastic Polymers 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000001502 supplementing effect Effects 0.000 claims 2
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910000676 Si alloy Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000010070 molecular adhesion Effects 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 150000002835 noble gases Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000007725 thermal activation Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0102890A FR2821697B1 (fr) | 2001-03-02 | 2001-03-02 | Procede de fabrication de couches minces sur un support specifique et une application |
| PCT/FR2002/000754 WO2002071475A1 (fr) | 2001-03-02 | 2002-03-01 | Procede de fabrication de couches minces sur un support specifique et une application |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004532515A JP2004532515A (ja) | 2004-10-21 |
| JP2004532515A5 true JP2004532515A5 (https=) | 2005-12-22 |
| JP4384410B2 JP4384410B2 (ja) | 2009-12-16 |
Family
ID=8860683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002570292A Expired - Lifetime JP4384410B2 (ja) | 2001-03-02 | 2002-03-01 | 特殊基板における薄膜製造方法およびその適用 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6939782B2 (https=) |
| EP (1) | EP1364400B9 (https=) |
| JP (1) | JP4384410B2 (https=) |
| AT (1) | ATE468606T1 (https=) |
| DE (1) | DE60236410D1 (https=) |
| FR (1) | FR2821697B1 (https=) |
| WO (1) | WO2002071475A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2839385B1 (fr) * | 2002-05-02 | 2004-07-23 | Soitec Silicon On Insulator | Procede de decollement de couches de materiau |
| FR2874455B1 (fr) * | 2004-08-19 | 2008-02-08 | Soitec Silicon On Insulator | Traitement thermique avant collage de deux plaquettes |
| US6759277B1 (en) * | 2003-02-27 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates |
| US7309446B1 (en) * | 2004-02-25 | 2007-12-18 | Metadigm Llc | Methods of manufacturing diamond capsules |
| FR2866983B1 (fr) * | 2004-03-01 | 2006-05-26 | Soitec Silicon On Insulator | Realisation d'une entite en materiau semiconducteur sur substrat |
| EP1571705A3 (fr) * | 2004-03-01 | 2006-01-04 | S.O.I.Tec Silicon on Insulator Technologies | Réalisation d'une entité en matériau semiconducteur sur substrat |
| KR101152141B1 (ko) * | 2005-06-08 | 2012-06-15 | 삼성전자주식회사 | 액정표시패널과 액정표시패널의 제조방법 |
| WO2007019487A2 (en) * | 2005-08-05 | 2007-02-15 | Reveo, Inc. | Method and system for fabricating thin devices |
| FR2935537B1 (fr) | 2008-08-28 | 2010-10-22 | Soitec Silicon On Insulator | Procede d'initiation d'adhesion moleculaire |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| FR2943177B1 (fr) * | 2009-03-12 | 2011-05-06 | Soitec Silicon On Insulator | Procede de fabrication d'une structure multicouche avec report de couche circuit |
| FR2947380B1 (fr) | 2009-06-26 | 2012-12-14 | Soitec Silicon Insulator Technologies | Procede de collage par adhesion moleculaire. |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
| JP5480321B2 (ja) | 2012-03-21 | 2014-04-23 | 株式会社東芝 | 磁気メモリ及びその製造方法 |
| CN104507853B (zh) | 2012-07-31 | 2016-11-23 | 索泰克公司 | 形成半导体设备的方法 |
| FR2995136B1 (fr) * | 2012-09-04 | 2015-06-26 | Soitec Silicon On Insulator | Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin |
| US9209142B1 (en) * | 2014-09-05 | 2015-12-08 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
| WO2025226300A1 (en) * | 2024-04-23 | 2025-10-30 | Microchip Technology Incorporated | Method including an ion beam implant and stressed film for separating a substrate film region from a bulk substrate region |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
| JPH07504764A (ja) * | 1992-03-13 | 1995-05-25 | コピン・コーポレーシヨン | 頭部取り付け表示系 |
| FR2715501B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
| JP3352340B2 (ja) * | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| FR2744285B1 (fr) * | 1996-01-25 | 1998-03-06 | Commissariat Energie Atomique | Procede de transfert d'une couche mince d'un substrat initial sur un substrat final |
| FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
| US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JPH11233449A (ja) * | 1998-02-13 | 1999-08-27 | Denso Corp | 半導体基板の製造方法 |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP4085459B2 (ja) * | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | ３次元デバイスの製造方法 |
| US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| FR2795866B1 (fr) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue |
| JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
| EP1939932A1 (en) * | 1999-08-10 | 2008-07-02 | Silicon Genesis Corporation | A substrate comprising a stressed silicon germanium cleave layer |
-
2001
- 2001-03-02 FR FR0102890A patent/FR2821697B1/fr not_active Expired - Fee Related
-
2002
- 2002-03-01 DE DE60236410T patent/DE60236410D1/de not_active Expired - Lifetime
- 2002-03-01 EP EP02708436A patent/EP1364400B9/fr not_active Expired - Lifetime
- 2002-03-01 WO PCT/FR2002/000754 patent/WO2002071475A1/fr not_active Ceased
- 2002-03-01 US US10/469,633 patent/US6939782B2/en not_active Expired - Lifetime
- 2002-03-01 JP JP2002570292A patent/JP4384410B2/ja not_active Expired - Lifetime
- 2002-03-01 AT AT02708436T patent/ATE468606T1/de not_active IP Right Cessation
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