JP2004529386A5 - - Google Patents

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Publication number
JP2004529386A5
JP2004529386A5 JP2002584084A JP2002584084A JP2004529386A5 JP 2004529386 A5 JP2004529386 A5 JP 2004529386A5 JP 2002584084 A JP2002584084 A JP 2002584084A JP 2002584084 A JP2002584084 A JP 2002584084A JP 2004529386 A5 JP2004529386 A5 JP 2004529386A5
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JP
Japan
Prior art keywords
gas
group
ion beam
substrate
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002584084A
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English (en)
Japanese (ja)
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JP2004529386A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/012540 external-priority patent/WO2002086620A2/en
Publication of JP2004529386A publication Critical patent/JP2004529386A/ja
Publication of JP2004529386A5 publication Critical patent/JP2004529386A5/ja
Pending legal-status Critical Current

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JP2002584084A 2001-04-19 2002-04-19 減衰位相シフトフォトマスクブランクを製造するためのイオンビーム蒸着法 Pending JP2004529386A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28478001P 2001-04-19 2001-04-19
PCT/US2002/012540 WO2002086620A2 (en) 2001-04-19 2002-04-19 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks

Publications (2)

Publication Number Publication Date
JP2004529386A JP2004529386A (ja) 2004-09-24
JP2004529386A5 true JP2004529386A5 (cg-RX-API-DMAC7.html) 2005-12-22

Family

ID=23091503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002584084A Pending JP2004529386A (ja) 2001-04-19 2002-04-19 減衰位相シフトフォトマスクブランクを製造するためのイオンビーム蒸着法

Country Status (8)

Country Link
US (1) US6756160B2 (cg-RX-API-DMAC7.html)
EP (1) EP1395876A2 (cg-RX-API-DMAC7.html)
JP (1) JP2004529386A (cg-RX-API-DMAC7.html)
KR (1) KR20040030590A (cg-RX-API-DMAC7.html)
CN (1) CN1516826A (cg-RX-API-DMAC7.html)
AU (1) AU2002254687A1 (cg-RX-API-DMAC7.html)
TW (1) TW593708B (cg-RX-API-DMAC7.html)
WO (1) WO2002086620A2 (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115537A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
US20040115343A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
US20040005416A1 (en) * 2002-07-03 2004-01-08 Cosmos Vacuum Technology Corporation Method for making an anti-reflection coating on a substrate for the production of a polarizer
US7300556B2 (en) * 2003-08-29 2007-11-27 Hitachi Global Storage Technologies Netherlands B.V. Method for depositing a thin film adhesion layer
WO2005024518A2 (en) * 2003-09-05 2005-03-17 Schott Ag Phase shift mask blank with increased uniformity
JP2008216587A (ja) * 2007-03-02 2008-09-18 Canon Inc Ｓｉ酸化膜の形成方法、配向膜および液晶光学装置
JP5779317B2 (ja) * 2009-12-24 2015-09-16 イーエイチエス レンズ フィリピン インク 光学物品の製造方法
US20160022300A1 (en) * 2011-02-01 2016-01-28 Korea University Research And Business Foundation Spinning nanowires and method for inducing cell eradication using the same
CN102230179B (zh) * 2011-06-22 2013-01-02 清华大学 一种制备金属纳米条纹的方法
US9925295B2 (en) 2012-05-09 2018-03-27 Amedica Corporation Ceramic and/or glass materials and related methods
US20130302509A1 (en) * 2012-05-09 2013-11-14 Amedica Corporation Antibacterial biomedical implants and associated materials, apparatus, and methods
JP5564089B2 (ja) * 2012-10-22 2014-07-30 パナソニック株式会社 赤外線光学フィルタおよびその製造方法
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
CN106222623A (zh) * 2016-08-31 2016-12-14 北京埃德万斯离子束技术研究所股份有限公司 氮化物半导体薄膜及制备方法
CN106282917B (zh) * 2016-08-31 2018-04-27 北京埃德万斯离子束技术研究所股份有限公司 氮化镓基发光二极管及制备方法
CN112095082A (zh) * 2020-09-10 2020-12-18 天津津航技术物理研究所 一种变折射率氧化物薄膜的制备方法
JP2023108276A (ja) * 2022-01-25 2023-08-04 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び表示装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890309A (en) 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP2744069B2 (ja) 1989-06-06 1998-04-28 三洋電機株式会社 薄膜の形成方法
GB9519546D0 (en) * 1995-09-25 1995-11-29 Gec Marconi Avionics Holdings Depositing optical coatings
US5897977A (en) 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
US6653027B2 (en) * 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks

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