TW593708B - Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks - Google Patents
Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks Download PDFInfo
- Publication number
- TW593708B TW593708B TW091108098A TW91108098A TW593708B TW 593708 B TW593708 B TW 593708B TW 091108098 A TW091108098 A TW 091108098A TW 91108098 A TW91108098 A TW 91108098A TW 593708 B TW593708 B TW 593708B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion beam
- group
- substrate
- gas
- phase shift
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000007737 ion beam deposition Methods 0.000 title claims abstract description 46
- 230000010363 phase shift Effects 0.000 title claims abstract description 23
- 230000002238 attenuated effect Effects 0.000 title claims description 6
- 230000008569 process Effects 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title description 7
- 150000002500 ions Chemical class 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 36
- 230000009977 dual effect Effects 0.000 claims description 29
- 238000010884 ion-beam technique Methods 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 13
- 229910052734 helium Inorganic materials 0.000 claims description 9
- 229910052754 neon Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052743 krypton Inorganic materials 0.000 claims description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000003624 transition metals Chemical group 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 26
- 239000000463 material Substances 0.000 abstract description 19
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 39
- 230000008021 deposition Effects 0.000 description 30
- 239000010410 layer Substances 0.000 description 17
- 230000004907 flux Effects 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- -1 nitrogen ions Chemical class 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- KUWFERPIOIZKRW-UHFFFAOYSA-N [Si]=O.[Mo] Chemical compound [Si]=O.[Mo] KUWFERPIOIZKRW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000035935 pregnancy Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 210000002435 tendon Anatomy 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28478001P | 2001-04-19 | 2001-04-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW593708B true TW593708B (en) | 2004-06-21 |
Family
ID=23091503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091108098A TW593708B (en) | 2001-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6756160B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1395876A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2004529386A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20040030590A (cg-RX-API-DMAC7.html) |
| CN (1) | CN1516826A (cg-RX-API-DMAC7.html) |
| AU (1) | AU2002254687A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW593708B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2002086620A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040115537A1 (en) * | 2002-04-19 | 2004-06-17 | Carcia Peter Francis | Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks |
| US20040115343A1 (en) * | 2002-04-19 | 2004-06-17 | Carcia Peter Francis | Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks |
| US20040005416A1 (en) * | 2002-07-03 | 2004-01-08 | Cosmos Vacuum Technology Corporation | Method for making an anti-reflection coating on a substrate for the production of a polarizer |
| US7300556B2 (en) * | 2003-08-29 | 2007-11-27 | Hitachi Global Storage Technologies Netherlands B.V. | Method for depositing a thin film adhesion layer |
| WO2005024518A2 (en) * | 2003-09-05 | 2005-03-17 | Schott Ag | Phase shift mask blank with increased uniformity |
| JP2008216587A (ja) * | 2007-03-02 | 2008-09-18 | Canon Inc | Ｓｉ酸化膜の形成方法、配向膜および液晶光学装置 |
| JP5779317B2 (ja) * | 2009-12-24 | 2015-09-16 | イーエイチエス レンズ フィリピン インク | 光学物品の製造方法 |
| US20160022300A1 (en) * | 2011-02-01 | 2016-01-28 | Korea University Research And Business Foundation | Spinning nanowires and method for inducing cell eradication using the same |
| CN102230179B (zh) * | 2011-06-22 | 2013-01-02 | 清华大学 | 一种制备金属纳米条纹的方法 |
| US9925295B2 (en) | 2012-05-09 | 2018-03-27 | Amedica Corporation | Ceramic and/or glass materials and related methods |
| US20130302509A1 (en) * | 2012-05-09 | 2013-11-14 | Amedica Corporation | Antibacterial biomedical implants and associated materials, apparatus, and methods |
| JP5564089B2 (ja) * | 2012-10-22 | 2014-07-30 | パナソニック株式会社 | 赤外線光学フィルタおよびその製造方法 |
| US11572617B2 (en) | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
| CN106222623A (zh) * | 2016-08-31 | 2016-12-14 | 北京埃德万斯离子束技术研究所股份有限公司 | 氮化物半导体薄膜及制备方法 |
| CN106282917B (zh) * | 2016-08-31 | 2018-04-27 | 北京埃德万斯离子束技术研究所股份有限公司 | 氮化镓基发光二极管及制备方法 |
| CN112095082A (zh) * | 2020-09-10 | 2020-12-18 | 天津津航技术物理研究所 | 一种变折射率氧化物薄膜的制备方法 |
| JP2023108276A (ja) * | 2022-01-25 | 2023-08-04 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、及び表示装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890309A (en) | 1987-02-25 | 1989-12-26 | Massachusetts Institute Of Technology | Lithography mask with a π-phase shifting attenuator |
| JP2744069B2 (ja) | 1989-06-06 | 1998-04-28 | 三洋電機株式会社 | 薄膜の形成方法 |
| GB9519546D0 (en) * | 1995-09-25 | 1995-11-29 | Gec Marconi Avionics Holdings | Depositing optical coatings |
| US5897977A (en) | 1996-05-20 | 1999-04-27 | E. I. Du Pont De Nemours And Company | Attenuating embedded phase shift photomask blanks |
| JPH11184067A (ja) * | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
| US6274280B1 (en) | 1999-01-14 | 2001-08-14 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
| US6653027B2 (en) * | 2001-02-26 | 2003-11-25 | International Business Machines Corporation | Attenuated embedded phase shift photomask blanks |
-
2002
- 2002-04-16 US US10/123,724 patent/US6756160B2/en not_active Expired - Fee Related
- 2002-04-19 WO PCT/US2002/012540 patent/WO2002086620A2/en not_active Ceased
- 2002-04-19 CN CNA02812104XA patent/CN1516826A/zh active Pending
- 2002-04-19 KR KR10-2003-7013676A patent/KR20040030590A/ko not_active Withdrawn
- 2002-04-19 TW TW091108098A patent/TW593708B/zh not_active IP Right Cessation
- 2002-04-19 EP EP02723927A patent/EP1395876A2/en not_active Withdrawn
- 2002-04-19 AU AU2002254687A patent/AU2002254687A1/en not_active Abandoned
- 2002-04-19 JP JP2002584084A patent/JP2004529386A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20020187405A1 (en) | 2002-12-12 |
| WO2002086620A3 (en) | 2003-09-12 |
| CN1516826A (zh) | 2004-07-28 |
| WO2002086620A2 (en) | 2002-10-31 |
| KR20040030590A (ko) | 2004-04-09 |
| EP1395876A2 (en) | 2004-03-10 |
| US6756160B2 (en) | 2004-06-29 |
| JP2004529386A (ja) | 2004-09-24 |
| AU2002254687A1 (en) | 2002-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |