JP2004523111A - 内部結合されたローパス及びバンドパス整合段を具備するパワートランジスタ - Google Patents

内部結合されたローパス及びバンドパス整合段を具備するパワートランジスタ Download PDF

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JP2004523111A
JP2004523111A JP2002558336A JP2002558336A JP2004523111A JP 2004523111 A JP2004523111 A JP 2004523111A JP 2002558336 A JP2002558336 A JP 2002558336A JP 2002558336 A JP2002558336 A JP 2002558336A JP 2004523111 A JP2004523111 A JP 2004523111A
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transistor
transistor according
capacitor
power transistor
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アントン ダブリュー ロードナト
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Koninklijke Philips NV
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Abstract

内部にシャントインダクタを具備するパワートランジスタであって、当該シャントは、内部のリード線（Ｌｉ、Ｌｄ１）を介してトランジスタの内部のアクティブダイ（ＡＤ）に内部的にそれぞれが結合された２つの別個のキャパシタ（Ｃｂ、Ｃｐ）で作られ、これらキャパシタの１つ（Ｃｐ）は、他の結合ワイヤ（Ｌｄ２）によりトランジスタのリード（Ｅ）に接続されていることを特徴とする。

Description

【０００１】
【発明の属する技術分野】
本発明は、内部にシャントインダクタを具備する高周波パワートランジスタに関する。
【０００２】
【従来の技術】
このようなパワートランジスタは、一般に知られている。このようなトランジスタは、内部のシャントインダクタにより形成されるポスト整合段を一般に具備する。このようなトランジスタは満足をもって長い間使用されてきているが、基本的電子部品は継続してパフォーマンスが最適化されて改善されるよう模索されている。
【０００３】
【課題を解決するための手段】
本発明によると、驚くべきことに、相対的に簡単でコスト効果の高い手段でトランジスタが実現でき、それによるとシャントキャパシタが、内部のリード線を介してトランジスタの内部のアクティブダイに内部的にそれぞれが結合された２つの別個のキャパシタで作られ、これらキャパシタのうちの１つは、他のボンドワイヤによりトランジスタのリードに接続されている。
【０００４】
このようなトランジスタの製造時に容易に適用できる、この手段により、出力インピーダンスは、例えば２ＧＨｚで３０Ｗの装置に対し約２Ωから約１９オームまで非常に増大し、このことは、内部のワイヤの適当な選択により出力インピーダンスが顧客の要求に相対的に容易に適応でき、一方で技術的に少ない回路損失となるであろうことを意味する。
【０００５】
本発明は特に、高いオーミックレベルでの複数のトランジスタの並列配置に利点があり、従って本発明は当該トランジスタの並列配置にも関する。斯様な配置においては、結果的に大きくなった配置の改善された効率、ゲイン及び出力パワーが得られれば、大きさの問題は低い程度であろう。
【０００６】
驚くべきことに、トランジスタの品質改善も本発明により達成される。なぜならば、新しい回路配置における、直流防止キャパシタとアクティブダイとの間の内部のバンドパスワイヤと、トランジスタのアクティブダイとトランジスタのリードとの間の内部のリードワイヤとがより離れた距離にあり、相互カップリングの機会がより低くなるので、機能が改善されるからである。本改善の特に有利な点は、仮想的にコストがかからずに実施できることである。
【０００７】
本発明は、以下の図面を参照して詳細に説明されるだろう。
【０００８】
これら図において、対応する部品は同一の参照符号が付けられている。
【０００９】
【発明の実施の形態】
図１においては、アクティブダイＡＤは、トランジスタのフランジ部Ｆに固定され、ＤＣ防止部ＤＣｂも同様である。アクティブダイＡＤはドレインＤｒを具備し、それを介してワイヤＬｄにより一方でトランジスタリードＥにボンドワイヤされ、他方でワイヤＬｉによりＤＣ防止部ＤＣｂにボンドワイヤされている。
【００１０】
その断面図である図２は、ＤＣ防止部ＤＣｂが形成されるＭＯＳキャパシティの層構成を示す。ＤＣ防止部ＤＣｂは、下部にシリコン層Ｓｉ、中間の絶縁層Ｏｘ及び上部に金属層Ｍを有する。リード線Ｌｉは、トランジスタに対する所望の周波数レンジの下部でパワートランジスタの出力キャパシタと共鳴するためのバンドパスインピーダンスのトランスフォーメーションを形成する。
【００１１】
図４に表されるように、本発明による新しい配置では、従来のＭＯＳキャパシタは、中間の絶縁層Ｏｘの上に２つの相互に分離した金属層を持つＭＯＳキャパシタにトランスフォーメーションされる。
【００１２】
本発明によると、２つのキャパシタは、このようにして単一のクリスタルで作られ、これにより好適には図３による実施が実現され、バンドパスリード線Ｌｉがアクティブダイと第１キャパシタＣｂとの間に形成されて新しい配置のための直流防止キャパシタを形成し、これに対し他方ではワイヤＬｄ１によりアクティブダイＡＤはポスト整合キャパシタとして使用される他のキャパシタＣｐに接続され、順にトランジスタリードＥにボンドワイヤＬｄ２により接続される。
【００１３】
トランジスタ部品の上述のような驚くべき簡単な配置は、容易に当業者により実践できる。当該配置は、好適には、単一の容量クリスタルを利用して、ローパス及びバンドパス整合段を結合することによりパワートランジスタのダブルの内部のポスト整合を達成する。
【００１４】
エンジンの直流防止キャパシティを２つのキャパシティへ分離すること及びトランジスタ内の若干異なるボンディングは、エクストラのインピーダンストランスフォーメーションを実現し、これを通じて（売られている）ＲＥは顕著な高いレベルまで顧客の要望で増大されてもよい。実際、従来のＲＦトランジスタのＲＥは、全て実質的に付加的な製造努力なしに、８倍まで増大してもよい。
【００１５】
上述の説明及び図の詳細とは別に、本発明は、更に請求項に係る特徴にも関係する。
【図面の簡単な説明】
【図１】従来のトランジスタの状態の関連部分の概略図である。
【図２】直流防止キャパシタの層構成を示す、図１の直流防止キャパシタの仮想部分を示す。
【図３】図１に対応する、本発明によるトランジスタの関連部分の概略図である。
【図４】図２に対応する、本発明によるキャパシタの部分を示したものである。

Claims (7)

  1. 内部にシャントインダクタを具備するＲＦパワートランジスタにおいて、シャントが、内部のリード線を介してトランジスタの内部のアクティブダイに内部的にそれぞれが結合された２つの別個のキャパシタで作られ、これらキャパシタの１つは、他のボンドワイヤによりトランジスタのリードに接続されていることを特徴とする、ＲＦパワートランジスタ。
  2. 前記キャパシタがＭＯＳキャパシタである、ことを特徴とする請求項１に記載のトランジスタ。
  3. 前記内部のリード線が、互いに別個のボンドワイヤにより形成されることを特徴とする請求項１又は２に記載のトランジスタ。
  4. 前記キャパシタは、内部の前記シャントのコモン直流防止キャパシティの２つの部分に分離した金属層として作られた当該金属層により形成されることを特徴とする請求項１、２又は３に記載のトランジスタ。
  5. 前記分離は、追加のインピーダンストランスフォーメーションを作るために実行されることを特徴とする請求項１乃至４の何れか１項に記載のトランジスタ。
  6. 出力インピーダンスが１０Ωより大きいことを特徴とする請求項１乃至５の何れか１項に記載のトランジスタ。
  7. 請求項１乃至６の何れか１項に記載のトランジスタを有する電子回路において、前記トランジスタが相対的に高いオーミック抵抗で並列接続で組み込まれていることを特徴とする電子回路。
JP2002558336A 2001-01-18 2001-12-17 内部結合されたローパス及びバンドパス整合段を具備するパワートランジスタ Expired - Fee Related JP4319407B2 (ja)

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PCT/IB2001/002559 WO2002058149A1 (en) 2001-01-18 2001-12-17 Power transistor with internally combined low-pass and band-pass matching stages

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EP1356521B1 (en) 2008-12-10
EP1356521A1 (en) 2003-10-29
JP4319407B2 (ja) 2009-08-26
ATE417361T1 (de) 2008-12-15
WO2002058149A1 (en) 2002-07-25

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