KR20020086645A - 내부적으로 결합된 로우-패스 및 밴드-패스 매칭 단을갖는 파워 트랜지스터 - Google Patents

내부적으로 결합된 로우-패스 및 밴드-패스 매칭 단을갖는 파워 트랜지스터 Download PDF

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KR20020086645A
KR20020086645A KR1020027012230A KR20027012230A KR20020086645A KR 20020086645 A KR20020086645 A KR 20020086645A KR 1020027012230 A KR1020027012230 A KR 1020027012230A KR 20027012230 A KR20027012230 A KR 20027012230A KR 20020086645 A KR20020086645 A KR 20020086645A
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transistor
power transistor
internal
radio frequency
frequency power
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루드나트안톤더블유
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코닌클리즈케 필립스 일렉트로닉스 엔.브이.
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Abstract

내부 분로 인덕가 제공된 무선 주파수 파워 트랜지스터로, 분로가 두 개의 분리된 캐패시터(Cb,Cp)로 만들어 지는 것이 특징이다. 각각은 내부 리드(Li,Ld1)를 통하여 트랜지스터 내부 활성 다이(AD)에 내부적으로 접착되며 캐패시터(Cp) 중 하나는 다른 본드 와이어에 의해 트랜지스터 리드(L)에 결합된다.

Description

내부적으로 결합된 로우-패스 및 밴드-패스 매칭 단을 갖는 파워 트랜지스터{POWER TRANSISTOR WITH INTERNALLY COMBINED LOW-PASS AND BAND-PASS MATCHING STAGES}
그런 파워 트랜지스터는 일반적으로 알려져 있다. 그런 파워 트랜지스터에는, 내부 분로 인덕터(internal shunt inductor)에 의해 형성된 포스트-매칭(post-matching) 단이 공통적으로 제공된다. 그러나 기본적인 전기 부품이 최적화되고 성능에서 향상되도록 끊임없이 추구됨에 따라 그런 트랜지스터는 오래전부터 만족스럽게 사용되어 왔다.
발명의 개요
본 발명에 따라, 그런 트랜지스터가 상대적으로 간단하고 높은 비용 효율로 놀랍게 실현될 수 있는데, 이에 따르면 분로 캐패시터가 두 개의 분리된 용량으로제조되고 각각은 트랜지스터 내부 활성 다이(transistor internal active die)에 내부 리드를 통하여 내부적으로 접합(bond)되며 그 캐패시터 중 하나는 다른 본드 와이어(bond wire)에 의해 트랜지스터 리드에 연결된다.
그런 트랜지스터의 제조에 쉽게 적용될 수 있는 이 개량에 의하여, 출력 임피던스는 견고하게 증가 -가령, 2GHz에서 30W인 디바이스에 대하여 약 2Ω에서 약 19Ω까지 증가됨- 되는데, 이는 내부 와이어의 적절한 선택에 의해, 기술적으로 적은 회로 손실을 유발하면서도 출력 임피던스가 사용자 요구 사항에 상대적으로 쉽게 적응될 수 있다는 것을 의미한다.
본 발명은 높은 저항 레벨에서의 복수 트랜지스터의 병렬 배치에 유리하고 그러므로 또한 그것에 관련된다. 그런 회로에서, 스케일링(scaling) 문제는 단지 약간 발생되는데, 이로 인해 임의의 업스케일(up-scaled) 디바이스의 효율, 이득(gain) 및 출력 전력을 향상시킨다.
놀랍게도, 트랜지스터 활성 다이와 트랜지스터 리드 사이의 내부 리드 와이어와, 블럭킹 캐패시터와 활성 다이 사이의 내부 밴드 패스(bandpass) 와이어가 새로운 배치에서 더 먼 거리에 있기 때문에 상호 결합의 기회가 더 낮아지며 그래서 인샤인(inshin)의 작용이 향상되기 때문에, 본 발명에 의해 트랜지스터의 질적 개선도 달성된다. 본 개선의 특별한 이점은 그것이 실질적으로 아무런 비용없이 구현될 수 있다는 것이다.
본 발명은 내부 분로 인덕터(internal shunt inductor)가 제공된 고주파 파워 트랜지스터에 관한 것이다.
이제 본 발명은 도면으로 더 설명될 것이다:
도 1 은 본 기술 트랜지스터 상태의 해당하는 부분의 개략도이다.
도 2는 블럭의 층 구조를 도시하는 도 1의 DC 블럭킹 캐패시터의 가상 절단을 도시한다.
도 3은 본 발명에 따른 트랜지스터의 포스트 매칭 개념의 도 1에 따른 표현이다.
도 4는 본 발명에 따른 캐패시터 블럭의 도 2에 부합하는 표현이다.
도면에서 대응하는 구성 요소들은 동일한 참조 부호로 참조된다.
도 1에서 활성 다이(AD)는 트랜지스터 플랜지(flange) 부분(F)에 고정되고 마찬가지로 DC 블럭(DCb)이 고정된다. 활성 다이(AD)에 드레인(Dr)이 제공되는데, 이것은 한 쪽에서 와이어(Ld)에 의해 트랜지스터 리드(E)에 본드 와이어되고 다른 쪽에서 와이어 Li에 의해 DC 블럭(DCb)에 본드 와이어된다.
도 2는, DC 블럭(DCb)을 형성하는 MOS 캐패시터의 층 구조에 관하여 수평 단면으로 도시한다. 그것은 하부 실리콘 층(Si), 중간 절연 층(Ox) 및 상부 금속 층(M)을 포함한다. 리드(Li)는 트랜지스터를 위해 요구되는 주파수 범위의 낮은 쪽에서 파워 트랜지스터의 출력 캐패시터와 공진하도록 의도된 밴드 패스 임피던스 변환(trasnformation)을 형성한다.
본 발명에 따른 새로운 배치에서, 도 4에 의해 도시된 것처럼, 종래의 MOS 캐패시터는 중간 절연 층(Ox)의 상부에 두 개의 상호 분리된 금속 층을 가지는 MOS 캐패시터로 변형된다.
본 발명에 따라 두 개의 캐패시터는 이 방법으로 단일 결정(crystal)으로 생산될 수 있는데, 이에 의해 바람직하게는 도 3에 따른 구현이 실현되며, 여기서 밴드 패스 리드(Li)는 활성 다이와 제 1 캐패시터(Cb) 사이에 연결되어 있으며 새로운 배열을 위한 블럭킹 캐패시터(blocking capacitor)를 형성하며, 이에 반해 활성 다이(AD)는 한편 와이어(Ld1)에 의해 본드 와이어(Ld2)에 의해 트랜지스터 리드(E)에 교대로 연결되는 포스트-매칭(post-matching) 캐패시터로서 사용되는 다른 캐패시터(Cp)에 연결되어 있다.
상기 놀랍게도 간략한 트랜지스터 구성 요소의 배치는 본 기술 분야의 어느 당업자에 의해서도 쉽게 실시될 수 있다. 이 배치는 단일 용량 결정을 사용하여 로우 패스 및 밴드 패스 매칭 단을 결합함으로써 파워 트랜지스터의 이중 내부 포스트-매칭을 순조롭게 달성한다.
엔진의 DC 블럭 용량이 두 개의 용량으로 분할되는 것과 트랜지스터 내의 근소한 차이가 있는 본딩은 이로써 소비자가 요구할 때 RE(sold)가 현저히 더 높은 수준으로까지 증가될 수 있도록 하는 여분의 임피던스 변환을 실현하며, 사실상 종래의 RF 트랜지스터의 RE는 모두 실제로 추가적인 제조 노력없이 8 배까지 증대될 수 있다.
상기 설명 및 관련된 도면의 모든 세부 사항과는 별도로 본 발명은 다음 청구항들의 특징에 더 관련된다.

Claims (7)

  1. 내부 분로 인덕터(shunt inductor)가 제공된 무선 주파수 파워 트랜지스터에 있어서,
    각각 내부 리드(Li,Ld1)를 통해 트랜지스터 내부 활성 다이(AD)에 내부적으로 접합되며, 둘 중 하나의 캐패시터(Cp)는 다른 본드 와이어(Ld2)에 의해 상기 트랜지스터 리드(E)와 결합되는 두 개의 분리된 캐패시터(Cb,Cp)에서 상기 분로가 생성되는 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  2. 제 1 항에 있어서,
    상기 캐패시터가 MOS 캐패시터인 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  3. 제 1 항 또는 제 2 항에 있어서,
    상기 내부 리드(Li,Ld1)가 상호 분리된 본드 와이어에 의해 형성되는 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  4. 제 1 항, 제 2 항 또는 제 3 항에 있어서,
    상기 캐패시터(Cb,Cp)가 상기 내부 분로의 공통의 DC 블럭 용량의 두 부분으로 분할된 금속 층으로서 제조되는 상기 금속 층에 의해 형성되는 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  5. 상기 어느 한 항에 있어서,
    상기 분할(split up)이 추가적인 임피던스 변환을 만들어내기 위하여 구현되는 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  6. 상기 임의의 항에 있어서,
    상기 출력 임피던스가 10Ω보다 큰 것을 특징으로 하는
    내부 분로 인덕터가 제공된 무선 주파수 파워 트랜지스터.
  7. 트랜지스터가 상대적으로 높은 저항에서 병렬 연결되는 것을 특징으로 하는제 1 항 내지 제 6 항 중의 어느 한 항의 트랜지스터를 포함하는
    전기회로.
KR1020027012230A 2001-01-18 2001-12-17 내부적으로 결합된 로우-패스 및 밴드-패스 매칭 단을갖는 파워 트랜지스터 KR20020086645A (ko)

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PCT/IB2001/002559 WO2002058149A1 (en) 2001-01-18 2001-12-17 Power transistor with internally combined low-pass and band-pass matching stages

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WO2002058149A1 (en) 2002-07-25
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US6646321B2 (en) 2003-11-11
JP4319407B2 (ja) 2009-08-26

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