JP2004517484A5 - - Google Patents

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Publication number
JP2004517484A5
JP2004517484A5 JP2002554754A JP2002554754A JP2004517484A5 JP 2004517484 A5 JP2004517484 A5 JP 2004517484A5 JP 2002554754 A JP2002554754 A JP 2002554754A JP 2002554754 A JP2002554754 A JP 2002554754A JP 2004517484 A5 JP2004517484 A5 JP 2004517484A5
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JP
Japan
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JP2002554754A
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JP2004517484A (ja
JP4109112B2 (ja
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Priority claimed from US09/754,869 external-priority patent/US6664554B2/en
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Publication of JP2004517484A5 publication Critical patent/JP2004517484A5/ja
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Publication of JP4109112B2 publication Critical patent/JP4109112B2/ja
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JP2002554754A 2001-01-03 2001-12-12 極紫外線リソグラフィシステム、及び反射光学素子の表面保持方法 Expired - Fee Related JP4109112B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/754,869 US6664554B2 (en) 2001-01-03 2001-01-03 Self-cleaning optic for extreme ultraviolet lithography
PCT/US2001/044707 WO2002054115A2 (en) 2001-01-03 2001-12-12 A self-cleaning optic for extreme ultraviolet lithography

Publications (3)

Publication Number Publication Date
JP2004517484A JP2004517484A (ja) 2004-06-10
JP2004517484A5 true JP2004517484A5 (ja) 2005-12-22
JP4109112B2 JP4109112B2 (ja) 2008-07-02

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Application Number Title Priority Date Filing Date
JP2002554754A Expired - Fee Related JP4109112B2 (ja) 2001-01-03 2001-12-12 極紫外線リソグラフィシステム、及び反射光学素子の表面保持方法

Country Status (8)

Country Link
US (1) US6664554B2 (ja)
EP (1) EP1364231B1 (ja)
JP (1) JP4109112B2 (ja)
KR (1) KR100852985B1 (ja)
AT (1) ATE320611T1 (ja)
AU (1) AU2002239385A1 (ja)
DE (2) DE01987139T1 (ja)
WO (1) WO2002054115A2 (ja)

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US7662263B2 (en) * 2002-09-27 2010-02-16 Euv Llc. Figure correction of multilayer coated optics
DE10258709A1 (de) * 2002-12-12 2004-07-01 Carl Zeiss Smt Ag Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung
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US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
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JP5061903B2 (ja) * 2005-10-11 2012-10-31 株式会社ニコン 多層膜反射鏡、多層膜反射鏡の製造方法、光学系、露光装置及びデバイスの製造方法
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JP5178724B2 (ja) * 2006-09-04 2013-04-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 汚染物質又は望ましくない物質で覆われた表面領域をクリーニングする方法
US7959310B2 (en) 2006-09-13 2011-06-14 Carl Zeiss Smt Gmbh Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element
DE102006042987B4 (de) * 2006-09-13 2012-01-19 Asml Netherlands B.V. Verfahren zum Betrieb einer EUV-Lithographievorrichtung, reflektives optisches Element für EUV-Lithographievorrichtung und Verfahren zu dessen Reinigung
DE102006044591A1 (de) * 2006-09-19 2008-04-03 Carl Zeiss Smt Ag Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination
JP5622353B2 (ja) * 2007-05-07 2014-11-12 本荘ケミカル株式会社 気相中の一酸化炭素を二酸化炭素に光酸化する方法
US7671348B2 (en) * 2007-06-26 2010-03-02 Advanced Micro Devices, Inc. Hydrocarbon getter for lithographic exposure tools
NL1034039C2 (nl) * 2007-06-26 2008-12-30 Stichting Fund Ond Material Werkwijze voor het beschermen van een optisch element in een stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied en stralingsbron.
DE102008041628A1 (de) * 2007-09-14 2009-03-19 Carl Zeiss Smt Ag Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer
EP2053463B1 (en) 2007-10-23 2011-06-08 Imec Detection of contamination in EUV systems
JP5099793B2 (ja) 2007-11-06 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学面から汚染層を除去するための方法、洗浄ガスを生成するための方法、ならびに対応する洗浄および洗浄ガス生成の構造
JP2011527436A (ja) 2008-07-07 2011-10-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スパッタ耐性材料を含む極紫外線放射反射要素
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JP5559562B2 (ja) * 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
DE102009043824A1 (de) * 2009-08-21 2011-02-24 Asml Netherlands B.V. Reflektives optisches Element und Verfahren zu dessen Herstellung
KR20130129899A (ko) * 2010-07-06 2013-11-29 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피 장치용 구성요소들, 이러한 구성요소들을 포함하는 euv 리소그래피 장치, 및 이러한 구성요소들을 제조하는 방법
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
DE102012207369A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Laser Optics Gmbh Optisches Element mit einer Beschichtung und Verfahren zur Überprüfung des optischen Elements
US9265573B2 (en) 2012-07-19 2016-02-23 Covidien Lp Ablation needle including fiber Bragg grating
US20140158914A1 (en) * 2012-12-11 2014-06-12 Sandia Corporation Optical component with blocking surface and method thereof
EP2959504B1 (en) 2013-02-25 2018-07-04 Kla-Tencor Corporation Method and system for gas flow mitigation of molecular contamination of optics
DE102013102670A1 (de) 2013-03-15 2014-10-02 Asml Netherlands B.V. Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements
KR20150044765A (ko) * 2013-10-17 2015-04-27 삼성전자주식회사 포토마스크 세정 방법
US9810991B2 (en) 2013-12-23 2017-11-07 Kla-Tencor Corporation System and method for cleaning EUV optical elements
KR102241758B1 (ko) * 2014-09-16 2021-04-20 삼성디스플레이 주식회사 패턴 형성 방법 및 이를 이용한 와이어 그리드 편광 소자의 제조방법
DE102014114572A1 (de) * 2014-10-08 2016-04-14 Asml Netherlands B.V. EUV-Lithographiesystem und Betriebsverfahren dafür
DE102015207140A1 (de) 2015-04-20 2016-10-20 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102016208987A1 (de) 2016-05-24 2017-11-30 Carl Zeiss Smt Gmbh Optisches Element und EUV-Lithographiesystem
DE102016213831A1 (de) 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102017213181A1 (de) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas
DE102017222690A1 (de) 2017-12-14 2018-02-15 Carl Zeiss Smt Gmbh Optisches Element mit einem Wasserstoff-Desorptionsmaterial
KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
NL2022644A (en) 2018-03-05 2019-09-10 Asml Netherlands Bv Prolonging optical element lifetime in an euv lithography system
CN109254338A (zh) * 2018-10-26 2019-01-22 中国科学院长春光学精密机械与物理研究所 一种19.5nm多层膜反射镜
DE102018221191A1 (de) * 2018-12-07 2020-06-10 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung
DE102020206117A1 (de) 2020-05-14 2021-11-18 Carl Zeiss Smt Gmbh Optisches Element, EUV-Lithographiesystem und Verfahren zum Bilden von Nanopartikeln
EP3933882A1 (en) 2020-07-01 2022-01-05 Carl Zeiss SMT GmbH Apparatus and method for atomic layer processing
DE102021206168A1 (de) 2021-06-16 2022-12-22 Carl Zeiss Smt Gmbh Verfahren zum Abscheiden einer Deckschicht, reflektives optisches Element für den EUV-Wellenlängenbereich und EUV-Lithographiesystem
DE102021214362A1 (de) 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Verfahren zur Herstellung einer Schutzabdeckung und EUV-Lithographiesystem

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