JP2004514301A - 半導体回路構成および関連する製造方法 - Google Patents

半導体回路構成および関連する製造方法 Download PDF

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Publication number
JP2004514301A
JP2004514301A JP2002547234A JP2002547234A JP2004514301A JP 2004514301 A JP2004514301 A JP 2004514301A JP 2002547234 A JP2002547234 A JP 2002547234A JP 2002547234 A JP2002547234 A JP 2002547234A JP 2004514301 A JP2004514301 A JP 2004514301A
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layer
source
semiconductor circuit
circuit configuration
forming
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JP2002547234A
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Japanese (ja)
Inventor
シュム，　ダニー
テンペル，　ゲオルグ
Original Assignee
インフィネオン　テクノロジーズ　アクチェンゲゼルシャフト
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Publication of JP2004514301A publication Critical patent/JP2004514301A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002547234A 2000-11-28 2001-10-22 半導体回路構成および関連する製造方法 Pending JP2004514301A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10058948A DE10058948A1 (de) 2000-11-28 2000-11-28 Halbleiterschaltungsanordnung sowie dazugehöriges Herstellungsverfahren
PCT/DE2001/004008 WO2002045170A1 (fr) 2000-11-28 2001-10-22 Systeme de memoire eeprom flash et procede de production correspondant

Publications (1)

Publication Number Publication Date
JP2004514301A true JP2004514301A (ja) 2004-05-13

Family

ID=7664908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002547234A Pending JP2004514301A (ja) 2000-11-28 2001-10-22 半導体回路構成および関連する製造方法

Country Status (6)

Country Link
US (1) US6800893B2 (fr)
EP (1) EP1342270B1 (fr)
JP (1) JP2004514301A (fr)
DE (2) DE10058948A1 (fr)
TW (1) TW544925B (fr)
WO (1) WO2002045170A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10332095B3 (de) * 2003-07-15 2005-01-20 Infineon Technologies Ag Halbleiterspeicher mit Charge-trapping-Speicherzellen
EP1792345A1 (fr) * 2004-09-15 2007-06-06 Koninklijke Philips Electronics N.V. Dispositif memoire sonos a isolement par tranchees peu profondes optimise

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2375692A1 (fr) * 1976-12-27 1978-07-21 Texas Instruments Inc Memoire semi-conductrice a grilles flottantes, programmable electriquement
US5210047A (en) * 1991-12-12 1993-05-11 Woo Been Jon K Process for fabricating a flash EPROM having reduced cell size
JP3465397B2 (ja) * 1995-01-26 2003-11-10 ソニー株式会社 半導体不揮発性メモリ装置
JPH08330550A (ja) * 1995-05-31 1996-12-13 Ricoh Co Ltd 不揮発性半導体メモリ装置とその製造方法
JPH0982921A (ja) * 1995-09-11 1997-03-28 Rohm Co Ltd 半導体記憶装置、その製造方法および半導体記憶装置の仮想グランドアレイ接続方法
JP3097657B2 (ja) * 1998-05-13 2000-10-10 日本電気株式会社 半導体記憶装置とその製造方法
US6037223A (en) * 1998-10-23 2000-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stack gate flash memory cell featuring symmetric self aligned contact structures

Also Published As

Publication number Publication date
US20040004233A1 (en) 2004-01-08
DE10058948A1 (de) 2002-06-06
EP1342270B1 (fr) 2007-10-03
US6800893B2 (en) 2004-10-05
EP1342270A1 (fr) 2003-09-10
TW544925B (en) 2003-08-01
DE50113096D1 (de) 2007-11-15
WO2002045170A1 (fr) 2002-06-06

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