JP2004511885A5 - - Google Patents

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Publication number
JP2004511885A5
JP2004511885A5 JP2002535177A JP2002535177A JP2004511885A5 JP 2004511885 A5 JP2004511885 A5 JP 2004511885A5 JP 2002535177 A JP2002535177 A JP 2002535177A JP 2002535177 A JP2002535177 A JP 2002535177A JP 2004511885 A5 JP2004511885 A5 JP 2004511885A5
Authority
JP
Japan
Prior art keywords
electrically conductive
nanocrystalline diamond
ultra
nitrogen
ambient temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002535177A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004511885A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2001/031388 external-priority patent/WO2002031891A1/en
Publication of JP2004511885A publication Critical patent/JP2004511885A/ja
Publication of JP2004511885A5 publication Critical patent/JP2004511885A5/ja
Pending legal-status Critical Current

Links

JP2002535177A 2000-10-09 2001-10-09 電極及びn型ナノ結晶体物質の電子放射アプリケーション Pending JP2004511885A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23917300P 2000-10-09 2000-10-09
US31414201P 2001-08-22 2001-08-22
PCT/US2001/031388 WO2002031891A1 (en) 2000-10-09 2001-10-09 Electrode and electron emission applications for n-type doped nanocrystalline materials

Publications (2)

Publication Number Publication Date
JP2004511885A JP2004511885A (ja) 2004-04-15
JP2004511885A5 true JP2004511885A5 (ko) 2005-04-14

Family

ID=26932345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002535177A Pending JP2004511885A (ja) 2000-10-09 2001-10-09 電極及びn型ナノ結晶体物質の電子放射アプリケーション

Country Status (4)

Country Link
EP (1) EP1330846A4 (ko)
JP (1) JP2004511885A (ko)
AU (2) AU2002211555A1 (ko)
WO (2) WO2002031891A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10259174B4 (de) 2002-12-18 2006-10-12 Robert Bosch Gmbh Verwendung eines tribologisch beanspruchten Bauelements
KR101268272B1 (ko) * 2004-05-27 2013-05-31 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 나노 크리스탈 다이아몬드막, 그 제조 방법, 및 나노크리스탈 다이아몬드막을 이용한 장치
KR100924287B1 (ko) * 2007-05-10 2009-10-30 한국과학기술연구원 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막
KR20120011050A (ko) * 2009-05-18 2012-02-06 더 스와치 그룹 리서치 앤 디벨롭먼트 엘티디 기계 시스템에 적용하기 위해 높은 마찰동력학적 성능을 갖는 마이크로기계 부품 코팅 방법
JP2011258348A (ja) * 2010-06-07 2011-12-22 Toyota Central R&D Labs Inc リチウム二次電池用負極、リチウム二次電池及びリチウム二次電池用負極の製造方法
EP2714190B1 (en) * 2011-06-03 2017-08-09 The University of Melbourne An electrode for medical device applications
JP6452334B2 (ja) 2014-07-16 2019-01-16 キヤノン株式会社 ターゲット、該ターゲットを備えたx線発生管、x線発生装置、x線撮影システム
CN108054473B (zh) * 2017-12-26 2024-04-09 深圳先进技术研究院 一种金属空气电池及其制备方法
CN114507858B (zh) * 2019-07-23 2022-10-21 北京科技大学 一种长寿命超纳米金刚石周期性多层涂层刀具的制备方法
CN113257974B (zh) * 2021-04-30 2023-04-21 武汉大学 具有超纳米晶金刚石导电层的发光二极管芯片及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599668A (en) * 1977-06-02 1981-10-07 Nat Res Dev Semiconductors
US5713775A (en) * 1995-05-02 1998-02-03 Massachusetts Institute Of Technology Field emitters of wide-bandgap materials and methods for their fabrication
US5973451A (en) * 1997-02-04 1999-10-26 Massachusetts Institute Of Technology Surface-emission cathodes
JP4294140B2 (ja) * 1999-01-27 2009-07-08 有限会社アプライドダイヤモンド ダイヤモンド薄膜の改質方法及びダイヤモンド薄膜の改質及び薄膜形成方法並びにダイヤモンド薄膜の加工方法
US6303225B1 (en) * 2000-05-24 2001-10-16 Guardian Industries Corporation Hydrophilic coating including DLC on substrate

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