JP2004506337A - 金属基板の化学機械平坦化 - Google Patents
金属基板の化学機械平坦化 Download PDFInfo
- Publication number
- JP2004506337A JP2004506337A JP2002519139A JP2002519139A JP2004506337A JP 2004506337 A JP2004506337 A JP 2004506337A JP 2002519139 A JP2002519139 A JP 2002519139A JP 2002519139 A JP2002519139 A JP 2002519139A JP 2004506337 A JP2004506337 A JP 2004506337A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- weight
- polishing fluid
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22433900P | 2000-08-11 | 2000-08-11 | |
US22746600P | 2000-08-24 | 2000-08-24 | |
PCT/US2001/025038 WO2002014014A2 (en) | 2000-08-11 | 2001-08-09 | Chemical mechanical planarization of metal substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004506337A true JP2004506337A (ja) | 2004-02-26 |
JP2004506337A5 JP2004506337A5 (enrdf_load_stackoverflow) | 2005-03-17 |
Family
ID=26918631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002519139A Pending JP2004506337A (ja) | 2000-08-11 | 2001-08-09 | 金属基板の化学機械平坦化 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6602436B2 (enrdf_load_stackoverflow) |
EP (1) | EP1307319A2 (enrdf_load_stackoverflow) |
JP (1) | JP2004506337A (enrdf_load_stackoverflow) |
KR (1) | KR20030020977A (enrdf_load_stackoverflow) |
TW (1) | TW516119B (enrdf_load_stackoverflow) |
WO (1) | WO2002014014A2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006128689A (ja) * | 2004-10-26 | 2006-05-18 | Samsung Corning Co Ltd | 化学的機械的平坦化用の水性スラリー組成物 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7516536B2 (en) * | 1999-07-08 | 2009-04-14 | Toho Engineering Kabushiki Kaisha | Method of producing polishing pad |
US6869343B2 (en) * | 2001-12-19 | 2005-03-22 | Toho Engineering Kabushiki Kaisha | Turning tool for grooving polishing pad, apparatus and method of producing polishing pad using the tool, and polishing pad produced by using the tool |
US6790768B2 (en) * | 2001-07-11 | 2004-09-14 | Applied Materials Inc. | Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects |
US6638326B2 (en) * | 2001-09-25 | 2003-10-28 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of tantalum and tantalum nitride |
KR100548085B1 (ko) * | 2001-10-09 | 2006-02-02 | 히다치 가세고교 가부시끼가이샤 | Cmp용 연마 패드, 이것을 사용한 기판의 연마 방법 및cmp용 연마 패드의 제조법 |
JP3934388B2 (ja) * | 2001-10-18 | 2007-06-20 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び製造装置 |
EP1448737B1 (en) * | 2001-11-15 | 2012-01-25 | Samsung Electronics Co., Ltd. | Slurry composition including an additive composition, and method of polishing an object using the slurry composition |
US6806193B2 (en) * | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
US6843708B2 (en) * | 2003-03-20 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of reducing defectivity during chemical mechanical planarization |
US6843709B1 (en) | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for reducing slurry reflux |
US20050164603A1 (en) * | 2004-01-22 | 2005-07-28 | House Colby J. | Pivotable slurry arm |
US7485028B2 (en) | 2004-03-19 | 2009-02-03 | Saint-Gobain Performance Plastics Corporation | Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same |
US7086939B2 (en) * | 2004-03-19 | 2006-08-08 | Saint-Gobain Performance Plastics Corporation | Chemical mechanical polishing retaining ring with integral polymer backing |
KR100880107B1 (ko) | 2006-01-25 | 2009-01-21 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 반도체 웨이퍼의 연마 방법 |
JP2009033038A (ja) * | 2007-07-30 | 2009-02-12 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
JP5407748B2 (ja) * | 2009-10-26 | 2014-02-05 | 株式会社Sumco | 半導体ウェーハの研磨方法 |
US10364373B2 (en) * | 2016-10-11 | 2019-07-30 | Fujifilm Electronic Materials U.S.A., Inc. | Elevated temperature CMP compositions and methods for use thereof |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752628A (en) | 1987-05-15 | 1988-06-21 | Nalco Chemical Company | Concentrated lapping slurries |
JP2714411B2 (ja) * | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
US6022264A (en) | 1997-02-10 | 2000-02-08 | Rodel Inc. | Polishing pad and methods relating thereto |
MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5607718A (en) | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
WO1996025270A1 (en) | 1995-02-15 | 1996-08-22 | Advanced Micro Devices, Inc. | Abrasive-free selective chemo-mechanical polish for tungsten |
JP3076244B2 (ja) * | 1996-06-04 | 2000-08-14 | 日本電気株式会社 | 多層配線の研磨方法 |
US5637031A (en) | 1996-06-07 | 1997-06-10 | Industrial Technology Research Institute | Electrochemical simulator for chemical-mechanical polishing (CMP) |
US5652177A (en) | 1996-08-22 | 1997-07-29 | Chartered Semiconductor Manufacturing Pte Ltd | Method for fabricating a planar field oxide region |
US5972792A (en) | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US6022268A (en) | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
TW375556B (en) | 1997-07-02 | 1999-12-01 | Matsushita Electric Ind Co Ltd | Method of polishing the wafer and finishing the polishing pad |
JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属cmpにおける研磨用組成物および研磨方法 |
WO2000037217A1 (en) | 1998-12-21 | 2000-06-29 | Lam Research Corporation | Method for cleaning an abrasive surface |
-
2001
- 2001-08-09 EP EP01962036A patent/EP1307319A2/en not_active Withdrawn
- 2001-08-09 US US09/925,209 patent/US6602436B2/en not_active Expired - Lifetime
- 2001-08-09 KR KR10-2003-7001898A patent/KR20030020977A/ko not_active Withdrawn
- 2001-08-09 JP JP2002519139A patent/JP2004506337A/ja active Pending
- 2001-08-09 WO PCT/US2001/025038 patent/WO2002014014A2/en not_active Application Discontinuation
- 2001-08-10 TW TW090119649A patent/TW516119B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006128689A (ja) * | 2004-10-26 | 2006-05-18 | Samsung Corning Co Ltd | 化学的機械的平坦化用の水性スラリー組成物 |
Also Published As
Publication number | Publication date |
---|---|
EP1307319A2 (en) | 2003-05-07 |
US20020058426A1 (en) | 2002-05-16 |
WO2002014014A3 (en) | 2002-05-02 |
US6602436B2 (en) | 2003-08-05 |
TW516119B (en) | 2003-01-01 |
WO2002014014A2 (en) | 2002-02-21 |
KR20030020977A (ko) | 2003-03-10 |
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