JP2004343092A5 - - Google Patents

Download PDF

Info

Publication number
JP2004343092A5
JP2004343092A5 JP2004123396A JP2004123396A JP2004343092A5 JP 2004343092 A5 JP2004343092 A5 JP 2004343092A5 JP 2004123396 A JP2004123396 A JP 2004123396A JP 2004123396 A JP2004123396 A JP 2004123396A JP 2004343092 A5 JP2004343092 A5 JP 2004343092A5
Authority
JP
Japan
Prior art keywords
scanning
mirror
irradiated object
irradiated
beam irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004123396A
Other languages
English (en)
Japanese (ja)
Other versions
JP4503343B2 (ja
JP2004343092A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004123396A priority Critical patent/JP4503343B2/ja
Priority claimed from JP2004123396A external-priority patent/JP4503343B2/ja
Publication of JP2004343092A publication Critical patent/JP2004343092A/ja
Publication of JP2004343092A5 publication Critical patent/JP2004343092A5/ja
Application granted granted Critical
Publication of JP4503343B2 publication Critical patent/JP4503343B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004123396A 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法 Expired - Fee Related JP4503343B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004123396A JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003116391 2003-04-21
JP2004123396A JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2004343092A JP2004343092A (ja) 2004-12-02
JP2004343092A5 true JP2004343092A5 (enExample) 2007-05-24
JP4503343B2 JP4503343B2 (ja) 2010-07-14

Family

ID=33543087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004123396A Expired - Fee Related JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4503343B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JP3390603B2 (ja) * 1995-05-31 2003-03-24 株式会社半導体エネルギー研究所 レーザー処理方法
JPH10199809A (ja) * 1997-01-09 1998-07-31 Sony Corp シリコン膜の結晶化方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4974425B2 (ja) * 2001-09-10 2012-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4035019B2 (ja) * 2002-08-23 2008-01-16 シャープ株式会社 半導体装置の製造方法
JP2004241421A (ja) * 2003-02-03 2004-08-26 Toshiba Matsushita Display Technology Co Ltd 半導体膜の結晶化方法およびその装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films

Similar Documents

Publication Publication Date Title
JP6022038B2 (ja) レーザビームによるワークピースの処理方法および処理装置
JP5789011B2 (ja) 薄膜の直線走査連続横方向凝固
CN1207764C (zh) 半导体衬底的激光退火方法和装置
TWI579901B (zh) 用於低溫多晶矽結晶的短脈衝光纖雷射
CN1443364A (zh) 用于提供单扫描、连续移动连续横向凝固的方法和系统
CN104115051B (zh) 光扫描装置及激光加工装置
KR20090131551A (ko) 레이저 어닐링 장치
TWI647046B (zh) 雷射光遮蔽部材、雷射處理裝置以及雷射光照射方法
CN102077318B (zh) 激光退火方法及装置
JP2011204912A (ja) レーザアニール処理体の製造方法およびレーザアニール装置
US20090203230A1 (en) Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same
JP5632662B2 (ja) パルスレーザ加工方法
KR101028598B1 (ko) 레이저 조사 장치
JP2004343092A5 (enExample)
JP2012243818A (ja) レーザ処理装置
JP2004343093A5 (enExample)
JP4781941B2 (ja) レーザによる表面微細構造形成方法
JP2006134986A (ja) レーザ処理装置
JP2007012733A (ja) 基板の分割方法
JP2024538599A (ja) 基板の切断又は分割のための基板の下処理
JP3413484B2 (ja) レーザアニーリング装置
JP2008060314A (ja) レーザアニール装置、レーザアニール方法、及び半導体装置の製造方法
KR101669645B1 (ko) 감광성 유리에 3차원의 미세 구조물 및 미세 패턴을 형성하기 위한 3차원 광조사 장치, 및 이를 이용하는 방법
JP3201382B2 (ja) 半導体薄膜の製造方法
JP2007235118A5 (enExample)