JP2004279873A - Exposure method and pattern forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure method which requires no laser length measurement system of an exposure apparatus for aligning a photomask to the exposure region. <P>SOLUTION: The exposure method is carried out by relatively moving a photomask 33 and a stage 31 mounting a CF (color filter) substrate 100 to be laminated with a TFT substrate 101 to constitute a device, and successively exposing a plurality of exposure regions 100a of the CF substrate 100 to transfer the patterns of a plurality of layers each functioning as part of the device. The method includes the processes of: forming alignment marks 53 on the CF substrate 100 prior to exposure of the first layer in a plurality of layers; and successively aligning the exposure regions 100a in each of the plurality of layers to the photomask 33 corresponding to each layer on the basis of the relative positions of the alignment marks 53 and alignment marks 51 formed in the photomask 33. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of exposing a substrate such as a color filter or a TFT substrate which is bonded to each other to form a device.
[0002]
[Prior art]
An exposure device that sequentially exposes a mask pattern to a plurality of exposure regions on a substrate, and that aligns a photomask and an exposure region sequentially by driving the stage while measuring the stage position using a laser measurement system. It has been known. When exposing a plurality of layers using this exposing apparatus, for example, when exposing a color filter, a different exposing apparatus corresponding to each layer such as a black matrix layer and R, G, and B layers. Is prepared. The exposure apparatus for the first layer (black matrix layer) aligns the photomask using a laser measuring system, forms an alignment mark simultaneously with the exposure, and forms the subsequent layers (R, G, and B layers). The exposure apparatus performs exposure by aligning a photomask based on the alignment mark.
[0003]
Further, as an apparatus for exposing a field divided into a plurality of sections by a scribe line of a semiconductor wafer, an apparatus that forms an alignment mark on a scribe line and aligns the alignment mark with an alignment mark of a photomask is known. (See Patent Document 1).
[0004]
[Patent Document 1]
JP-A-5-109605 [0005]
[Problems to be solved by the invention]
In the above-described technique, since the laser measuring system is provided in the exposure apparatus, various inconveniences have occurred. For example, a high accuracy is required for a laser length measurement system because a plurality of exposure regions need to coincide with each other when bonded to another substrate. However, in the laser length measuring system, since an error occurs in a measured value due to a change in temperature, a change in atmospheric pressure, or the like, it is necessary to control the temperature or the like of the exposure apparatus with high accuracy. In addition, the exposure apparatus for the first layer and the exposure apparatus for the subsequent layers have different device configurations, and it has been difficult to ensure compatibility of the exposure apparatuses. It is conceivable to provide a laser length measuring system in all the exposure apparatuses of each layer in order to ensure compatibility, but the laser length measuring system is expensive and not practical.
[0006]
Therefore, an object of the present invention is to provide an exposure method and a pattern forming apparatus that do not require a laser length measurement system of an exposure apparatus for aligning a photomask and an exposure area.
[0007]
[Means for Solving the Problems]
Hereinafter, the present invention will be described. In addition, in order to facilitate understanding of the present invention, reference numerals in the accompanying drawings are added in parentheses, but the present invention is not limited to the illustrated embodiment.
[0008]
According to the exposure method of the present invention, the photomask (33) and the stage (31) on which the exposure substrate (100) mounted on the counter substrate (101) is mounted to form a device are relatively moved. In an exposure method for sequentially exposing a plurality of layers of a pattern functioning as a part of the device to each of a plurality of exposure regions (100a... 100a) of an exposure substrate, a plurality of layers are exposed before exposing a first layer of the plurality of layers. Forming an alignment mark (53 ... 53) on the exposure substrate; and forming each of the plurality of layers based on a relative position between the plurality of alignment marks and the alignment mark (51 ... 51) provided on the photomask. The above-described problem is solved by providing a step of sequentially aligning an exposure region and a photomask corresponding to each layer.
[0009]
According to the present invention, in all the layers functioning as a part of the device, since the alignment between the exposure area and the photomask is performed based on the alignment mark, it is necessary to provide a laser measurement system in the exposure apparatus for each layer. There is no. Therefore, relaxation of the temperature condition during operation and compatibility of the exposure apparatus can be achieved. Further, in the exposure of the exposure substrate to be bonded to the counter substrate, since the plurality of exposure regions and the plurality of counter regions of the counter substrate need to be matched, the relative position between the plurality of exposure regions is set to a predetermined relative position. There must be. Therefore, in the conventional method of exposing the first layer using a laser length measuring system, when exposing only a part of the plurality of exposure regions, the substrate is transferred to another exposure apparatus. If moved, the position of the already exposed exposure area could not be specified, and the remaining exposure area could not be exposed. Therefore, all the exposure areas of one layer have to be exposed by one exposure apparatus. However, in the present invention, since the relative positions of the plurality of exposure regions are specified by the alignment mark before the exposure, after exposing a part of the plurality of exposure regions to an exposure region, the exposure device is transferred to another exposure apparatus and the remaining exposure region is moved to another exposure device. Exposure can also be performed on the exposure area. This makes it possible to form a plurality of types of patterns on a single substrate, prevent imposition loss of the substrate, and perform mixed production according to various circumstances.
[0010]
In the exposure method of the present invention, the opposed substrate has a plurality of opposed regions (101a) bonded to each of the plurality of exposed regions, and in the forming step, a pattern of the opposed region is formed. The plurality of alignment marks may be formed on the exposure substrate so that the arrangement of the plurality of opposing regions including the influence of an apparatus error and the arrangement of the plurality of exposure regions coincide with each other. Even if the alignment mark is formed at a preset position, there is a possibility that the opposing region and the exposure region may not be accurately matched due to a positional shift of the opposing region based on the peculiarity of the device for forming the pattern of the opposing region. is there. However, according to the above aspect of the present invention, since the alignment mark is formed in consideration of the error of the apparatus for forming the pattern of the facing region, the accuracy of the alignment between the exposure region and the facing region is improved. The arrangement of the opposing region including the influence of the error may be obtained by measuring the position of the opposing region of the opposing substrate on which the pattern is formed with a marking device, or may be obtained by measuring the operating characteristics of the device for forming the pattern. It may be obtained by grasping the habit of the device by some method such as a test.
[0011]
In the exposure method of the present invention, the exposure substrate is a glass substrate, and in the forming step, the plurality of alignments are performed by irradiating the exposure substrate with laser light to change optical properties inside the glass substrate. Marks may be formed. In this case, since the alignment mark is formed inside the glass, there is no possibility that the alignment mark will be deformed or deleted by the subsequent processing on the exposed substrate. Therefore, the positioning of the photomask with respect to the exposure area of each layer is performed accurately.
[0012]
In the exposure method of the present invention, the exposure substrate is bonded to the counter substrate while being held by an electrostatic chuck (42a). In the forming step, the exposure substrate is used for the bonding. The plurality of alignment marks may be formed in a state where the exposure substrate is held by an electrostatic chuck (21a) of the same model as the electrostatic chuck. Even if the alignment mark is formed at an accurate position and exposure is performed, the exposure substrate may be deformed by the electrostatic chuck during bonding and the position of the exposure area may be shifted, so that the exposure area and the facing area may not be accurately aligned. There is. However, in the above aspect of the present invention, since the alignment mark is formed on the exposure substrate in a state where the deformation at the time of bonding is reproduced, the position of the exposure region at the time of forming the alignment mark and the position of the exposure region at the time of bonding And the exposure region and the facing region are accurately aligned.
[0013]
In the pattern forming apparatus (1) of the present invention, a stage (31) on which an exposure substrate (100) for forming a device, which is bonded to a counter substrate (101), and a photomask (33) are relatively moved. A pattern forming apparatus provided with an exposure device (12, 13, 14, 15) for sequentially exposing a plurality of layers of patterns functioning as a part of the device to each of a plurality of exposure regions (100a) of the exposure substrate The above-mentioned object is attained by providing a marking device (11) which is provided separately from the exposure device and forms a plurality of alignment marks on the exposure substrate.
[0014]
According to the pattern forming apparatus of the present invention, since the alignment marks can be formed on the substrate by the marking apparatus before each layer is exposed by the exposure apparatus, the above-described exposure method can be realized.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a diagram showing a configuration of a pattern forming apparatus 1 of the present invention. The pattern forming apparatus 1 is formed as an apparatus for forming a pattern on a CF substrate 100 (exposure substrate, see FIG. 8) by photolithography.
[0016]
The CF substrate 100 is made of, for example, a glass substrate and has a thickness of 1 mm and an area of 4 m ² . After pattern formation by the pattern forming apparatus 1, the CF substrate 100 is bonded to the TFT substrate 101 (see FIG. 7A) by the bonding apparatus 2. Six liquid crystal display devices are manufactured from one set of the CF substrate 100 and the TFT substrate 101. Therefore, as shown in FIG. 8, the pattern forming apparatus 1 exposes six exposure regions 100 a to 100 a on the CF substrate 100.
[0017]
The pattern forming apparatus 1 of FIG. 1 includes a marking device 11 for forming an alignment mark 53 (see FIG. 7B) on a CF substrate 100 and a plurality of devices for exposing each layer on the CF substrate 100. Exposure devices 12 to 15 are provided. The exposure devices 12 to 15 are provided corresponding to, for example, the black matrix layer, the R layer, the G layer, and the B layer. The pattern forming apparatus 1 also includes a coater for forming a photosensitive resin or a resist in which a pigment is dispersed on the surface of the CF substrate 100 in a thin film shape before exposure by each of the exposure devices 12 to 15, a CF substrate after the exposure, Various devices such as a developing device for performing a developing process are provided for the image forming apparatus 100, but the description is omitted because it is not the gist of the invention.
[0018]
FIG. 2A is a side view illustrating the configuration of the marking device 11. The marking device 11 includes a stage 21 for mounting the CF substrate 100, a driving device 22 for driving the stage 21 in the horizontal direction, a laser length measurement system 23 for measuring the position of the stage 21, and a CF. An optical system 24 for marking the substrate 100, a camera 25 for imaging the stage 21, and a control device 26 are provided.
[0019]
On the upper surface of the stage 21, an electrostatic chuck 21a for attracting and holding the CF substrate 100 by electrostatic force is provided. The electrostatic chuck 21a is the same as the electrostatic chuck 42a of the bonding device 2 (see FIG. 3B). Various known techniques can be used for the electrostatic chuck 21a. The electrostatic chuck 21a includes, for example, an insulator (not shown) and an electrode (not shown) embedded in the insulator. A surface type electrode may be embedded in the insulator, a bipolar electrode may be embedded, or a number of electrodes may be embedded in the insulator.
[0020]
The driving device 22 includes, for example, an electric motor, and its operation is controlled by the control device 26. The laser length measurement system 23 includes, for example, a laser interferometer (not shown) that irradiates a laser beam toward the stage 21 and receives a reflected laser beam to measure a distance to the stage. . The laser interferometer outputs a signal corresponding to the measured distance to the control device 26.
[0021]
The optical system 24 includes, for example, a laser 27 and an objective lens 28. As shown in FIG. 2B, the laser light L output from the laser 27 is condensed on the converging point Q by the objective lens. At the focal point Q, the optical properties of the CF substrate 100 change due to the laser light L. For example, bubbles are generated inside the glass by the laser light L, and the light is easily scattered at the focal point Q. Therefore, the alignment mark 53 is formed on the CF substrate 100 by scanning the laser beam L on the CF substrate 100. The scanning with the laser light L may be performed by driving the stage 21 in the horizontal direction, or may be performed by driving a lens, a mirror, or the like included in the optical system 24. For example, a pulse laser may be used as the laser 27 and marking may be performed by connecting dots.
[0022]
The camera 25 is configured as, for example, a CCD camera, and outputs a video signal based on a captured image to the control device 26. The camera 25 is provided so as to be able to capture an image of a range irradiated with the laser light L by the optical system 24. The control device 26 is configured as a computer including, for example, a CPU, a ROM, a RAM, and an external storage device, and according to a program or the like recorded in the external storage device, various types of the electrostatic chuck 21a, the driving device 22, the laser 27, and the like. Control the operation of the device.
[0023]
FIG. 3A is a side view illustrating a configuration of the exposure apparatus 12. The exposure devices 13 to 15 have the same configuration. The exposure device 12 includes a stage 31 on which the CF substrate 100 is placed, a driving device 32 that drives the stage 31 in the horizontal direction and the vertical direction, a photomask 33 disposed above the stage 31, and a photomask 33 And a control device 35 for capturing images of the stage 2 from above. In addition, the exposure apparatus 12 includes various devices such as an illumination device for irradiating the photomask 33 with a light beam, but the description is omitted because it is not the gist of the present invention. However, the exposure apparatus 12 has a scale for measuring the horizontal position of the stage 31, but is not provided with a laser measurement system.
[0024]
On the upper surface of the stage 31, a vacuum chuck 31a is provided. The drive device 32 includes, for example, an electric motor, and is controlled by the control device 35. As shown in FIG. 8, the photomask 33 has a size that covers one exposure region 100a. Further, the photomask 33 has alignment marks 51, 51 at positions outside the region corresponding to the exposure region 100a. The cameras 34, 34 are provided at positions where the alignment marks 51, 51 can be imaged, and output a video signal based on the captured image to the control device 35. The control device 35 is configured as a computer, for example, like the control device 26, and controls the operation of various devices such as the drive device 32 according to programs and the like recorded in an external storage device. Note that one of the control device 26 and the control device 35 may be used for the other.
[0025]
FIG. 3B is a side view illustrating the configuration of the bonding device 2. The bonding device 2 is configured as a device in which a CF substrate 100 and a TFT substrate 101 are vertically opposed to each other, a liquid crystal is dropped on a lower substrate, and then the CF substrate 100 and the TFT substrate 101 are bonded in a vacuum. ing.
[0026]
The bonding apparatus 2 includes a chamber 41 whose inside can be maintained in a reduced pressure state, and surface plates 42 and 43 provided inside the chamber 41 and facing vertically. In addition, the bonding apparatus 2 further includes a driving device that drives the platens 42 and 43 up and down so as to approach or separate from each other, but the description is omitted because it is not the gist of the present invention. The platens 42 and 43 include electrostatic chucks 42a and 43a for holding the CF substrate 100 and the TFT substrate 101 by electrostatic force, respectively. The CF substrate 100 and the TFT substrate 101 are held on the electrostatic chucks 42a and 43a, respectively. It is stuck in the state where it was done.
[0027]
The operation of the pattern forming apparatus 1 having the above configuration will be described.
[0028]
The pattern forming apparatus 1 learns the positions of the exposure regions 101a... 101a of the TFT substrate 101 by the marking device 11 before the processing on the CF substrate 100. FIG. 4 is a flowchart illustrating a procedure of a position measurement process executed by the control device 26 of the marking device 11 during the learning. This process is executed, for example, when the user performs a predetermined input operation on the control device 26. This process is based on the premise that the TFT substrate 101 is placed on the stage 21 as shown in FIG.
[0029]
As shown in FIG. 7A, the TFT substrate 101 has exposure regions 100a... 100a of the CF substrate 100 and regions 101a. Patterning has already been performed by a manufacturing apparatus different from the apparatus 1. The TFT substrate 101 has a plurality of sets of alignment marks 52, 52 around the areas 101a... 101a, respectively. The alignment marks 52, 52 indicate the positions of the areas 101a... 101a. For example, when the area 101a is exposed, the pattern of the alignment marks 52 is simultaneously exposed and formed.
[0030]
The TFT substrate 101 is placed on the stage 21 with the surface (film surface) to be bonded to the CF substrate 100 facing downward. The mounting of the TFT substrate 101 on the stage 21 may be performed manually by a user, or may be performed by a transfer device (not shown) of the marking device 11 for mounting the CF substrate 100 on the stage 21. Is also good.
[0031]
In step S1 of FIG. 4, the control device 26 controls the operation of the drive device 22 to move the stage 21 so as to position any one of the alignment marks 52... 52 below the camera 25. This control is performed based on, for example, a control amount recorded in the control device 26 in advance.
[0032]
Next, the control device 26 specifies a deviation between the alignment mark 52 and the converging point Q based on the video signal from the camera 25 (step S2), and controls the driving device 22 to collect the alignment mark 52 and the alignment mark 52. The light spot Q is aligned (step S3). Then, the position of the stage 21 at the time of alignment is measured and recorded by the laser measuring system 23 (step S4). In step S5, it is determined whether or not the measurement has been completed for all the alignment marks 52... 52. If it is determined that the measurement has not been completed, steps S1 to S4 are repeatedly executed, and the remaining alignment marks 52. The stage position when the light converging point Q is matched is sequentially measured. If it is determined that the processing has been completed, the processing ends. The position of the focal point Q may be specified in advance by, for example, marking the test substrate with the optical system 24 so that the position of the focal point Q in the imaging range of the camera 25 is specified.
[0033]
After learning the exposure areas 101a... 101a of the TFT substrate 101, the pattern forming apparatus 1 receives the CF substrate 100 on which the resist of each layer is not yet formed on the surface. Then, the CF substrate 100 is transported in the order of the exposure devices 12, 13, 14, and 15, and various processes are performed on the CF substrate 100 by the respective devices 11 to 15.
[0034]
FIG. 5 is a flowchart illustrating a procedure of a marking process performed by the control device 26 of the marking device 11. This process is started, for example, when the CF substrate 100 is placed on the stage 21. While this process is being performed, the CF substrate 100 is suction-held by the electrostatic chuck 21a. Note that a resist or the like corresponding to each layer has not yet been formed on the CF substrate 100 mounted on the stage 21.
[0035]
In step S11, the control device 26 operates the drive device 22 such that the stage position measured by the laser measuring system 23 matches one of the stage positions measured in step S4 of the position measurement process (see FIG. 4). And the stage 21 is moved. Next, the laser 27 is driven to form an alignment mark 53 on the CF substrate 100. In step S13, it is determined whether or not alignment marks 53... 53 are formed corresponding to all of the alignment marks 52... 52 on the TFT substrate 101. If it is determined that alignment marks 53 are not formed, steps S11 and S12 are performed. Execute repeatedly. Thus, as shown in FIGS. 7A and 7B, alignment marks 53... 53 of the CF substrate 100 are sequentially formed in the same arrangement as the alignment marks 52.
[0036]
FIG. 6 is a flowchart illustrating a procedure of an exposure process performed by the control device 35 of the exposure apparatus 12. This process is started when the CF substrate 100 is placed on the stage 31, as shown in FIG. 8, for example. While this process is being performed, the CF substrate 100 is suction-held by the vacuum chuck 31a. Note that a black matrix layer resist is formed on the CF substrate 100 mounted on the stage 31.
[0037]
First, the control device 35 controls the operation of the driving device 32 so as to position any one of the exposure regions 100a to 100a below the photomask 33 (step S21). This control is performed, for example, based on a control amount recorded in the control device 35 in advance. Next, the camera 7 captures an image of the alignment mark 51 of the photomask 33 and the alignment mark 53 of the CF substrate 100 (Step S22), and specifies the positional deviation between the alignment mark 51 and the alignment mark 53 (Step S23). Then, as shown in FIG. 8, the photomask 33 and the exposure region 100a are aligned based on the positional deviation (step S24). Thereafter, in step S25, an illumination device (not shown) is driven to perform exposure. In step S15, it is determined whether or not the exposure has been completed for all the exposure areas 100a... 100a. If it is determined that the exposure has not been completed, steps S21 to S25 are repeatedly performed. As a result, as shown in FIG. 8, the exposure regions 100a... 100a are sequentially exposed.
[0038]
In the exposure devices 13 to 15, the same processing is executed by the control device provided in each device, and the exposure regions 100a to 100a of the R layer, the G layer, and the B layer are sequentially exposed.
[0039]
The present invention is not limited to the above embodiments, and may be implemented in various forms as long as the technical idea of the present invention is substantially the same.
[0040]
The method of holding the TFT substrate 101 when measuring the alignment marks 52 on the TFT substrate 101 and the method of holding the CF substrate 100 when forming the alignment marks 53 on the CF substrate 100 are further matched with the holding method by the bonding device 2. You may. For example, when measuring the position of the alignment mark 52 on the TFT substrate 101, the TFT substrate 101 may be held from above by the same electrostatic chuck as the electrostatic chuck 43a.
[0041]
Although the bonding apparatus 2 is described with the CF substrate 100 being on the lower side, the CF substrate 100 may be on the upper side. In this case, in the marking device 11, the alignment mark 53 may be formed in a state where the CF substrate 100 is held from above by an electrostatic chuck.
[0042]
In the marking device 11, the CF substrate 100 is held by an electrostatic chuck, but the CF substrate 100 may be held by a vacuum chuck.
[0043]
Various methods may be used for position measurement of the exposure regions 101a... 101a of the TFT substrate 101. The measurement may be performed by a device different from the marking device 11, and data of the measurement result may be input to the marking device 11. The position of the alignment mark 52 is not limited to the one that measures the position of the alignment mark 52. For example, the position of the exposure area 101 a may be directly measured based on the pattern of the exposure area 101 a.
[0044]
The alignment mark 53 of the CF substrate 100 may be formed by various methods. For example, the optical properties of the CF substrate 100 may be changed by irradiating the CF substrate 100 with laser light via a photomask having an alignment mark pattern. Other materials may be attached, such as by depositing a chromium film. Since the alignment mark 53 may be formed by the time the pattern of the black matrix layer is exposed, the chromium film or the resin BM film may be marked with a laser.
[0045]
【The invention's effect】
As described above, according to the present invention, in all the layers functioning as a part of the device, since the alignment between the exposure region and the photomask is performed based on the alignment mark, a laser is applied to the exposure apparatus of each layer. There is no need to provide a length measurement system. Therefore, relaxation of the temperature condition during operation and compatibility of the exposure apparatus can be achieved. Further, after exposing a part of the plurality of exposure regions, the exposure device can be moved to another exposure device to expose the remaining exposure regions. This makes it possible to form a plurality of types of patterns on a single substrate, prevent imposition loss of the substrate, and perform mixed production according to various circumstances.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a pattern forming apparatus to which the present invention is applied.
FIG. 2 is a diagram illustrating a configuration of a marking device included in the pattern forming apparatus of FIG. 1;
FIG. 3 is a diagram showing a configuration of an exposure apparatus and a bonding apparatus included in the pattern forming apparatus of FIG.
FIG. 4 is a flowchart illustrating a procedure of a position measurement process executed by a control device of the marking device of FIG. 2;
FIG. 5 is a flowchart showing a procedure of a marking process executed by a control device of the marking device of FIG. 2;
FIG. 6 is a flowchart showing a procedure of an exposure process executed by a control device of the exposure apparatus of FIG. 3;
FIG. 7 is a diagram showing a state of the marking device of FIG. 2 when the position measurement processing of FIG. 4 and the marking processing of FIG. 5 are being executed.
FIG. 8 is a diagram showing a state of the exposure apparatus of FIG. 3 when the exposure processing of FIG. 6 is being performed.
[Explanation of symbols]
Reference Signs List 1 pattern forming device 11 marking device 12, 13, 14, 15 exposure device 21a, 42a electrostatic chuck 31 stage 33 photomask 51, 53 alignment mark 100 CF substrate 100a exposure region 101 TFT substrate 101a exposure region (opposing region)

Claims (4)

A stage on which an exposure substrate for forming a device is mounted by being attached to an opposing substrate and a photomask are relatively moved, and a plurality of exposure regions on the exposure substrate each function as a part of the device. In an exposure method for sequentially exposing a layer pattern,
Before exposing the first layer of the plurality of layers, forming a plurality of alignment marks on the exposure substrate,
A step of sequentially aligning each of the exposure regions of the plurality of layers and a photomask corresponding to each layer based on the relative positions of the plurality of alignment marks and the alignment marks provided on the photomask,
An exposure method, comprising: The opposing substrate has a plurality of opposing regions bonded to each of the plurality of exposure regions,
In the forming step, the plurality of alignment marks are arranged so that the arrangement of the plurality of opposed areas including the influence of an error of an apparatus for forming the pattern of the opposed area and the arrangement of the plurality of exposure areas are matched. The exposure method according to claim 1, wherein is formed on the exposure substrate. The exposure substrate is a glass substrate,
The method according to claim 1, wherein in the forming step, the plurality of alignment marks are formed by irradiating a laser beam to the exposure substrate to change optical properties inside the glass substrate. Exposure method. A stage on which an exposure substrate for forming a device is mounted by being attached to an opposing substrate and a photomask are relatively moved, and a plurality of exposure regions on the exposure substrate each function as a part of the device. In a pattern forming apparatus provided with an exposure device for sequentially exposing the layer pattern,
A pattern forming apparatus, which is provided separately from the exposure apparatus and includes a marking apparatus for forming a plurality of alignment marks on the exposure substrate.

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