JP2004264767A5 - - Google Patents

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Publication number
JP2004264767A5
JP2004264767A5 JP2003057343A JP2003057343A JP2004264767A5 JP 2004264767 A5 JP2004264767 A5 JP 2004264767A5 JP 2003057343 A JP2003057343 A JP 2003057343A JP 2003057343 A JP2003057343 A JP 2003057343A JP 2004264767 A5 JP2004264767 A5 JP 2004264767A5
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JP
Japan
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general formula
group
alkyl group
represented
group represented
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JP2003057343A
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English (en)
Japanese (ja)
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JP2004264767A (ja
JP4225806B2 (ja
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Application filed filed Critical
Priority to JP2003057343A priority Critical patent/JP4225806B2/ja
Priority claimed from JP2003057343A external-priority patent/JP4225806B2/ja
Priority to EP04004962A priority patent/EP1457822A3/en
Priority to US10/792,306 priority patent/US6969577B2/en
Publication of JP2004264767A publication Critical patent/JP2004264767A/ja
Publication of JP2004264767A5 publication Critical patent/JP2004264767A5/ja
Application granted granted Critical
Publication of JP4225806B2 publication Critical patent/JP4225806B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003057343A 2003-03-04 2003-03-04 ポジ型レジスト組成物 Expired - Fee Related JP4225806B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003057343A JP4225806B2 (ja) 2003-03-04 2003-03-04 ポジ型レジスト組成物
EP04004962A EP1457822A3 (en) 2003-03-04 2004-03-03 Positive resist composition
US10/792,306 US6969577B2 (en) 2003-03-04 2004-03-04 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003057343A JP4225806B2 (ja) 2003-03-04 2003-03-04 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004264767A JP2004264767A (ja) 2004-09-24
JP2004264767A5 true JP2004264767A5 (enExample) 2005-09-22
JP4225806B2 JP4225806B2 (ja) 2009-02-18

Family

ID=32767875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003057343A Expired - Fee Related JP4225806B2 (ja) 2003-03-04 2003-03-04 ポジ型レジスト組成物

Country Status (3)

Country Link
US (1) US6969577B2 (enExample)
EP (1) EP1457822A3 (enExample)
JP (1) JP4225806B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100785585B1 (ko) * 2004-03-08 2007-12-13 미츠비시 레이온 가부시키가이샤 레지스트용 중합체, 레지스트 조성물 및 패턴 제조방법, 및레지스트용 중합체용 원료 화합물
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
DE102004037527A1 (de) * 2004-07-29 2006-03-23 Infineon Technologies Ag Siliziumhaltiges Resistsystem für Lithographieverfahren
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
JP4496434B2 (ja) * 2005-11-24 2010-07-07 信越化学工業株式会社 多官能(メタ)アクリレート化合物、光硬化性樹脂組成物及び物品
JP4705897B2 (ja) * 2006-03-17 2011-06-22 富士フイルム株式会社 ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
US7838198B2 (en) * 2007-12-13 2010-11-23 International Business Machines Corporation Photoresist compositions and method for multiple exposures with multiple layer resist systems
US7838200B2 (en) * 2007-12-13 2010-11-23 International Business Machines Corporation Photoresist compositions and method for multiple exposures with multiple layer resist systems
US8236476B2 (en) 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
JP5573356B2 (ja) * 2009-05-26 2014-08-20 信越化学工業株式会社 レジスト材料及びパターン形成方法
US8394573B2 (en) 2010-09-16 2013-03-12 International Business Machines Corporation Photoresist compositions and methods for shrinking a photoresist critical dimension
KR20140007801A (ko) * 2010-12-01 2014-01-20 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 이것을 이용한 패턴 형성 방법, 중합체 및 화합물
US10442823B2 (en) 2014-10-07 2019-10-15 Nbd Nanotechnologies, Inc. Functionalized F-POSS monomer compositions and uses thereof
US10174059B2 (en) * 2015-03-09 2019-01-08 Nbd Nanotechnologies, Inc. Functionalized F-POSS monomer compositions and uses thereof
TWI712860B (zh) * 2015-02-26 2020-12-11 日商富士軟片股份有限公司 圖案形成方法、電子元件的製造方法及有機溶劑顯影用感光化射線性或感放射線性樹脂組成物
US10281770B2 (en) * 2016-03-11 2019-05-07 Lg Display Co., Ltd. Liquid crystal display device and method of fabricating the same
JP7056024B2 (ja) * 2016-07-29 2022-04-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
CN109942741A (zh) * 2019-02-22 2019-06-28 江苏南大光电材料股份有限公司 一种光刻胶用树脂的制备方法
KR20240124379A (ko) * 2021-12-24 2024-08-16 다우 도레이 캄파니 리미티드 비닐 변성 오가노폴리실록산, 이를 원료로 하는 라디칼 중합성 폴리머 또는 라디칼 중합성 코폴리머

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481049A (en) 1984-03-02 1984-11-06 At&T Bell Laboratories Bilevel resist
JP2980149B2 (ja) 1993-09-24 1999-11-22 富士通株式会社 レジスト材料およびパターン形成方法
JPH10186669A (ja) * 1996-12-25 1998-07-14 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP3965547B2 (ja) * 1999-12-01 2007-08-29 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3410707B2 (ja) 2000-04-19 2003-05-26 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP3874070B2 (ja) * 2001-03-01 2007-01-31 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
EP1299773A4 (en) * 2001-04-04 2006-06-21 Fujifilm Electronic Materials SILICLE-CONTAINING ACETAL PROTECTIVE POLYMERS AND PHOTORESISTAL COMPOSITIONS THEREOF
TWI307819B (en) * 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
TW200413417A (en) * 2002-10-31 2004-08-01 Arch Spec Chem Inc Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof

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