JP2004260065A - 混成集積回路装置 - Google Patents

混成集積回路装置 Download PDF

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JP2004260065A
JP2004260065A JP2003050975A JP2003050975A JP2004260065A JP 2004260065 A JP2004260065 A JP 2004260065A JP 2003050975 A JP2003050975 A JP 2003050975A JP 2003050975 A JP2003050975 A JP 2003050975A JP 2004260065 A JP2004260065 A JP 2004260065A
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wire
integrated circuit
covered
hybrid integrated
resin
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JP3938071B2 (ja
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Yasuki Yoshida
泰樹 吉田
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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Abstract

【課題】外部がモールド樹脂で覆われ、その内部に、電子部品や電子部品等を搭載した回路基板を保護材で塗布した構造をもつ混成集積回路装置において、回路構成のために保護材が塗布される前に、外側の樹脂で直接覆われる電子部品や端子間等を金やアルミニウムなどのワイヤで接続することが必要になる。この場合ワイヤと端子間をストレートのループ形状で接続すると、長期間使用されたとき、混成集積回路が繰り返しの熱的ストレスを受けることによって、保護材と樹脂の境界面近傍においてワイヤが破断する不良が発生することがある。
【解決手段】保護材で覆われた電子部品や回路基板等と、外側の硬いモールド樹脂で直接覆われた電子部品や端子間等をループ形状で接続するワイヤを備えた構造において、保護材に覆われている部分のワイヤループ形状に撓みを持たせるように設置することによって対策を行う。
【選択図】 図１

Description

【０００１】
【発明の属する技術分野】
本発明は、外側が樹脂で覆われ、その内部に保護材で覆われた電子部品や回路を有する混成集積回路装置の内部配線に関するものである。
【０００２】
【従来の技術】
図５（ａ）、（ｂ）に従来技術による混成集積回路装置の断面図を示す。図５（ａ）は混成集積回路装置全体の断面図、図５（ｂ）はワイヤ近傍の断面拡大図である。図５（ａ）に示すように、混成集積回路装置１は、外側が樹脂１０で覆われ、その内部に、電子部品３０ｂ等を搭載した回路基板２１が保護材５０で覆われた構造を有する。混成集積回路装置１の回路構成のために、回路基板２１は、保護材で覆われる前に、樹脂で直接覆われる電子部品３０ａや外部への接続端子２２との間等を前記ワイヤで接続を行う。この場合、前記ワイヤを接続してある部分の間をストレートもしくはストレートに近いループ形状にして接続すると、長期間使用したとき、混成集積回路装置が繰り返しの熱的ストレスを受けることによって、保護材と樹脂の境界面４０ｃにおいて前記ワイヤが破断する不良が発生する。ワイヤの熱的ストレスに関しては、例えば特許文献１に半導体パワー素子への一般的なワイヤループの張り方、形状について記載されているが、外側の樹脂と内側の保護材に関連づけられたワイヤの張り方、形状については記載されていない。
【０００３】
【特許文献１】
特開２００２−２４６７０２号公報
【０００４】
【発明が解決しようとする課題】
ワイヤと端子間をストレートもしくはストレートに近いループ形状で接続する場合に、ワイヤが破断する原因としては次が考えられる。混成集積回路装置が繰り返し使用される場合、内部発熱や外部の温度変化による熱的なストレスを受ける。この時、保護材と樹脂の熱膨張係数が異なるため、繰り返しの温度変化による両材料間の熱膨張差によってワイヤが境界面近傍で剪断応力を受け、そのため境界面近傍において破断する不良が発生する。そこで、本発明の目的は、前記構造をもつ混成集積回路装置において、保護材と樹脂の境界面においてワイヤが受ける剪断応力を低減のできる混成集積回路を提供することにある。
【０００５】
【課題を解決する手段】
そこで、上記課題を解決するために、請求項１に係る発明において、外側が樹脂で覆われ、少なくともその一部が樹脂より柔らかな保護材で覆われた電子部品または回路基板を有し、柔らかな保護材で覆われた電子部品または回路基板と樹脂で直接覆われた電子部品または外部への接続端子との間をループ形状で接続するアルミワイヤもしくは金ワイヤを備えた混成集積回路装置において、アルミワイヤもしくは金ワイヤが保護材に覆われている部分のワイヤループ形状に撓みを持たせるように設置されていることを特徴とする。
【０００６】
請求項２に係る発明は、請求項１に係る発明において、外側の樹脂はトランスファーモールド、ポッティング、ディプモールド、粉体モールドいずれかの方法により形成され、保護材はシリコンゴムもしくはゲル状の物質であることを特徴とする。
請求項３に係る発明は、請求項２に係る発明において、接続された前記アルミワイヤもしくは金ワイヤがいずれの方向から見ても直線にならないように設置されていることを特徴とする。
請求項４に係る発明は、請求項２に係る発明において、アルミワイヤもしくは金ワイヤのループ形状に撓みを持たせ、かつループの頂部が保護材と樹脂の境界面もしくは境界面より保護材側にできるように設置したことを特徴とする。
【０００７】
【発明の実施の形態】
以下、本発明について図面を用いて詳細に説明する。図１（ａ）、（ｂ）に本発明の第１の実施例を示す。図１（ａ）は樹脂で金属基板２０全体を覆った混成集積回路装置全体の断面図、図１（ｂ）はワイヤ近傍の断面拡大図である。なおワイヤとしてはアルミワイヤもしくは金ワイヤを適用する。図２は本発明の第２の実施例を示す図であり、樹脂で金属基板２０を部分的に覆った混成集積回路装置全体の断面図である。混成集積回路装置１は、図１（ａ）、（ｂ）または図２に示すように、外側の樹脂１０、金属基板２０、半導体部品電子部品等を搭載した回路基板２１、半導体部品を含む電子部品３０ａ、３０ｂ、ワイヤ４０、４１、保護材５０などから構成されている。樹脂１０は第１の実施例に示すように金属基板全体を覆う場合もあり、第２の実施例に示すように部分的に覆う場合もある。金属基板２０は、例えば銅、アルミなどの金属からなる基板である。回路基板２１は、例えばアルミナなどのセラミックからなる基板であり、回路パターンが構成され電子部品が搭載されており、ワイヤがボンディングできる電極２３が搭載されている。通常この回路基板２１は、外側の樹脂や該樹脂の外側からの汚染防止、湿気防止または応力緩和の目的でシリコンゴムもしくはゲル状の物質などの比較的柔らかな保護材５０で覆って使用する。しかし回路基板２１は、混成集積回路装置１の回路構成のために、保護材で覆う前に、外側の樹脂で直接覆われる電子部品３０ａや外部への接続端子等と、ワイヤで接続する。この場合、図５（ａ）、（ｂ）に示すようにストレートもしくはストレートに近いループ形状で接続すると、長期間使用され繰り返しの熱的ストレスを受けることによって、保護材と樹脂の境界面近傍４０ｃにおいてワイヤが破断する不良が発生する。これを防止するために、図１（ａ）、（ｂ）または図２に示すように保護材に覆われているワイヤのループ形状に撓み部４０ａを持たせる構造とし、保護材と樹脂の熱膨張差によって発生する剪断応力を受けた場合、柔らかな保護材部分において、ワイヤが伸縮できるようにすることによって、境界面近傍でワイヤが局部的に受ける剪断応力を軽減する。なおワイヤ４１についても同様の効果が得られる。
図３（ａ）、（ｂ）に本発明の第３の実施例を示す。図３（ａ）はワイヤ近傍の混成集積回路装置断面図を示す。図３（ａ）は図３（ｂ）のＹ−Ｙ線で切断した混成集積回路装置の要部断面図であるが、断面にはないワイヤを説明のため追加、図示してある。図３（ｂ）は図３（ａ）のＸ−Ｘ線で切断した混成集積回路装置の要部断面図である。ワイヤ４０に撓みを持たせるため、ワイヤをいずれの方向から見ても直線にならない構造として、保護材に覆われているワイヤのループ形状に撓みを持たせる構造としている。このためには、ワイヤをボンディングするツールの動作を、ファーストボンディングのあとセカンドボンディング部分にストレートに移行せず、回路基板に対し垂直方向にはワイヤがループを描くように動作させ、水平方向には円の一部または三角形の２辺を描く動作を行わせることによって可能となる。図４に本発明の第４の実施例を示す。ワイヤのループ形状に撓みを持たせかつループの頂部が保護材と樹脂の境界面近傍もしくは近傍より保護材側にできるように設置することによって、柔らかくさらに熱膨張係数の大きい保護材側にワイヤの頂部を配置することによって伸縮し易くし、さらにワイヤを保護材表面と斜めにクロスさせて、境界面と接する外周を大きくし、断面積を大きくすることによって、前記境界面において局部的に加わる剪断応力に対し強度をアップし、切れにくい構造としている。
【０００８】
【発明の効果】
本発明では、外部がモールド樹脂で覆われ、その内部に電子部品や電子部品等を搭載した回路基板を保護材で覆った構造をもつ混成集積回路装置において、混成集積回路装置の回路構成のために、回路基板を保護材で覆う前に、外側の樹脂で直接覆われる電子部品や外部への接続端子間等をアルミワイヤもしくは金ワイヤで接続するときに、比較的柔らかな保護材に覆われている部分のアルミワイヤもしくは金ワイヤのループ形状に撓みを持たせる構造とすることにより、アルミワイヤもしくは金ワイヤに加わる剪断応力を低減し、熱的ストレスに強い長寿命な混成集積回路とすることができる。
【図面の簡単な説明】
【図１】本発明の第１の実施例を示す。（ａ）は樹脂で金属基板２０全面を覆った混成集積回路装置全体の断面図、（ｂ）はアルミワイヤもしくは金ワイヤ近傍の断面拡大図である。
【図２】本発明の第２の実施例を示す。樹脂で金属基板２０を部分的に覆った混成集積回路装置全体の断面図である。
【図３】本発明の第３の実施例を示す。（ａ）は（ｂ）のＹ−Ｙ線で切断した混成集積回路装置の要部断面図を示すが、断面にはないワイヤを説明のため追加、図示してある。また（ｂ）は（ａ）のＸ−Ｘ線で切断した混成集積回路装置の要部断面図である。
【図４】本発明の第４の実施例を示す。（ａ）は混成集積回路装置全体の断面図、（ｂ）は前記アルミワイヤもしくは金ワイヤ近傍の断面拡大図である
【図５】従来のこの種の混成集積回路を示す図である。
【符号の説明】
１ 混成集積回路
１０ 樹脂
２０ 金属基板
２１ 回路基板
２２ 外部への接続端子
２３ ワイヤボンディング電極
３０ａ、３０ｂ 電子部品
４０、４１ ワイヤ
４０ａ ワイヤのループ形状の撓み部
４０ｂ ワイヤのループ形状の頂部
５０ 保護材

Claims (4)

  1. 外側が樹脂で覆われ、少なくともその一部が前記樹脂より柔らかな保護材で覆われた電子部品または回路基板を有し、前記柔らかな保護材で覆われた電子部品または回路基板と前記樹脂で直接覆われた電子部品または外部への接続端子との間をループ形状で接続するアルミワイヤもしくは金ワイヤを備えた混成集積回路装置において、前記アルミワイヤもしくは金ワイヤが前記保護材に覆われている部分のワイヤループ形状に撓みを持たせるように設置されていることを特徴とする混成集積回路装置。
  2. 前記樹脂はトランスファーモールド、ポッティング、ディプモールド、粉体モールドのいずれかの方法により形成され、前記保護材はシリコンゴムもしくはゲル状の物質であることを特徴とする請求項１記載の混成集積回路装置。
  3. 接続された前記アルミワイヤもしくは金ワイヤがいずれの方向から見ても直線にならないように設置されていることを特徴とする請求項２記載の混成集積回路置。
  4. 前記アルミワイヤもしくは金ワイヤのループ形状に撓みを持たせ、かつループの頂部が前記保護材と前記樹脂の境界面もしくは境界面より前記保護材側にできるように設置したことを特徴とする請求項２記載の混成集積回路装置。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008117488A1 (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co., Ltd 半導体装置およびその製造方法
JP2012524987A (ja) * 2009-04-21 2012-10-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 吸収層を備える基板のためのカプセル化された回路装置及び該回路装置を製造する方法
US8355262B2 (en) 2006-12-19 2013-01-15 Shinko Electric Industries Co., Ltd. Electronic component built-in substrate and method of manufacturing electronic component built-in substrate
CN103811446A (zh) * 2012-11-15 2014-05-21 万国半导体(开曼)股份有限公司 一种半导体器件中的铜线键接结构及其制造方法
JP2022551884A (ja) * 2019-10-09 2022-12-14 ウルフスピード インコーポレイテッド 半導体デバイスの信頼性を高めるためのシステムおよびプロセス

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8355262B2 (en) 2006-12-19 2013-01-15 Shinko Electric Industries Co., Ltd. Electronic component built-in substrate and method of manufacturing electronic component built-in substrate
KR101302640B1 (ko) * 2006-12-19 2013-09-05 신꼬오덴기 고교 가부시키가이샤 전자 부품 내장 기판 및 전자 부품 내장 기판의 제조 방법
WO2008117488A1 (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co., Ltd 半導体装置およびその製造方法
JPWO2008117488A1 (ja) * 2007-03-23 2010-07-08 三洋電機株式会社 半導体装置およびその製造方法
US8183684B2 (en) 2007-03-23 2012-05-22 Semiconductor Components Industries, Llc Semiconductor device and method of manufacturing the same
JP2012524987A (ja) * 2009-04-21 2012-10-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 吸収層を備える基板のためのカプセル化された回路装置及び該回路装置を製造する方法
CN103811446A (zh) * 2012-11-15 2014-05-21 万国半导体(开曼)股份有限公司 一种半导体器件中的铜线键接结构及其制造方法
JP2022551884A (ja) * 2019-10-09 2022-12-14 ウルフスピード インコーポレイテッド 半導体デバイスの信頼性を高めるためのシステムおよびプロセス
JP7392130B2 (ja) 2019-10-09 2023-12-05 ウルフスピード インコーポレイテッド 半導体デバイスの信頼性を高めるためのシステムおよびプロセス

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