JP2004220678A5 - - Google Patents

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Publication number
JP2004220678A5
JP2004220678A5 JP2003005804A JP2003005804A JP2004220678A5 JP 2004220678 A5 JP2004220678 A5 JP 2004220678A5 JP 2003005804 A JP2003005804 A JP 2003005804A JP 2003005804 A JP2003005804 A JP 2003005804A JP 2004220678 A5 JP2004220678 A5 JP 2004220678A5
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JP
Japan
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bank
data
read
address
write
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JP2003005804A
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English (en)
Japanese (ja)
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JP2004220678A (ja
JP4127054B2 (ja
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Priority to JP2003005804A priority Critical patent/JP4127054B2/ja
Priority claimed from JP2003005804A external-priority patent/JP4127054B2/ja
Priority to US10/749,510 priority patent/US7027347B2/en
Publication of JP2004220678A publication Critical patent/JP2004220678A/ja
Publication of JP2004220678A5 publication Critical patent/JP2004220678A5/ja
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Publication of JP4127054B2 publication Critical patent/JP4127054B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2003005804A 2003-01-14 2003-01-14 半導体記憶装置 Expired - Fee Related JP4127054B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003005804A JP4127054B2 (ja) 2003-01-14 2003-01-14 半導体記憶装置
US10/749,510 US7027347B2 (en) 2003-01-14 2004-01-02 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003005804A JP4127054B2 (ja) 2003-01-14 2003-01-14 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2004220678A JP2004220678A (ja) 2004-08-05
JP2004220678A5 true JP2004220678A5 (enExample) 2005-04-07
JP4127054B2 JP4127054B2 (ja) 2008-07-30

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ID=32896373

Family Applications (1)

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JP2003005804A Expired - Fee Related JP4127054B2 (ja) 2003-01-14 2003-01-14 半導体記憶装置

Country Status (2)

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US (1) US7027347B2 (enExample)
JP (1) JP4127054B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100585179B1 (ko) * 2005-02-07 2006-06-02 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 데이터 기입및 독출 방법
JP4772546B2 (ja) * 2006-03-17 2011-09-14 富士通セミコンダクター株式会社 半導体メモリ、メモリシステムおよびメモリシステムの動作方法
KR100853469B1 (ko) * 2007-08-29 2008-08-21 주식회사 하이닉스반도체 반도체 메모리장치
JP2009176343A (ja) * 2008-01-22 2009-08-06 Liquid Design Systems:Kk 半導体記憶装置
KR102414690B1 (ko) * 2017-11-30 2022-07-01 에스케이하이닉스 주식회사 반도체 메모리 장치
JP2020140380A (ja) * 2019-02-27 2020-09-03 ローム株式会社 半導体装置及びデバッグシステム
US11545231B2 (en) * 2021-02-09 2023-01-03 Micron Technology, Inc. Reset read disturb mitigation
CN116206649B (zh) * 2022-01-18 2024-03-15 北京超弦存储器研究院 动态存储器及其读写方法、存储装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3112019B2 (ja) 1989-12-08 2000-11-27 株式会社日立製作所 半導体装置
JP3713312B2 (ja) * 1994-09-09 2005-11-09 株式会社ルネサステクノロジ データ処理装置

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