JP2004220021A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2004220021A JP2004220021A JP2003431583A JP2003431583A JP2004220021A JP 2004220021 A JP2004220021 A JP 2004220021A JP 2003431583 A JP2003431583 A JP 2003431583A JP 2003431583 A JP2003431583 A JP 2003431583A JP 2004220021 A JP2004220021 A JP 2004220021A
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- JP
- Japan
- Prior art keywords
- pixel
- electrically connected
- signal lines
- signal line
- gate signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015654 memory Effects 0.000 claims abstract description 93
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 20
- 230000003068 static effect Effects 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 239000004973 liquid crystal related substance Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- -1 Bi 4 Ti 3 O 12 Chemical class 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003431583A JP2004220021A (ja) | 2002-12-27 | 2003-12-25 | 表示装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002378868 | 2002-12-27 | ||
| JP2003431583A JP2004220021A (ja) | 2002-12-27 | 2003-12-25 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012022625A Division JP5337888B2 (ja) | 2002-12-27 | 2012-02-06 | 表示装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004220021A true JP2004220021A (ja) | 2004-08-05 |
| JP2004220021A5 JP2004220021A5 (enExample) | 2007-01-18 |
Family
ID=32911220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003431583A Withdrawn JP2004220021A (ja) | 2002-12-27 | 2003-12-25 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004220021A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007025701A (ja) * | 2005-07-20 | 2007-02-01 | Samsung Electronics Co Ltd | 表示装置の駆動装置 |
| JP2007035839A (ja) * | 2005-07-26 | 2007-02-08 | Seiko Epson Corp | 有機強誘電体メモリ |
| US7307872B2 (en) * | 2005-05-30 | 2007-12-11 | Hynix Semiconductor Inc. | Nonvolatile semiconductor static random access memory device |
| JP2013041660A (ja) * | 2006-08-31 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56117275A (en) * | 1980-02-22 | 1981-09-14 | Tokyo Shibaura Electric Co | Image display |
| JPH05119298A (ja) * | 1991-10-29 | 1993-05-18 | Semiconductor Energy Lab Co Ltd | 電気光学表示装置およびその表示方法 |
| JPH0843793A (ja) * | 1994-07-29 | 1996-02-16 | Sharp Corp | アクティブマトリクス方式の表示装置 |
| JPH08286170A (ja) * | 1995-02-16 | 1996-11-01 | Toshiba Corp | 液晶表示装置 |
| JPH09292631A (ja) * | 1996-04-26 | 1997-11-11 | Toshiba Corp | 液晶表示装置 |
| JP2000284727A (ja) * | 1999-01-29 | 2000-10-13 | Seiko Epson Corp | 表示装置 |
| JP2000338918A (ja) * | 1999-05-27 | 2000-12-08 | Sony Corp | 表示装置及びその駆動方法 |
| JP2001195028A (ja) * | 2000-01-11 | 2001-07-19 | Rohm Co Ltd | 表示装置およびその駆動方法 |
| WO2001073737A1 (en) * | 2000-03-30 | 2001-10-04 | Seiko Epson Corporation | Display |
| JP2002132234A (ja) * | 2000-08-18 | 2002-05-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
| JP2002132217A (ja) * | 2000-08-18 | 2002-05-09 | Semiconductor Energy Lab Co Ltd | 電子装置およびその駆動方法 |
| JP2002156953A (ja) * | 2000-09-05 | 2002-05-31 | Toshiba Corp | 表示装置およびその駆動方法 |
| JP2002169181A (ja) * | 2000-12-04 | 2002-06-14 | Toshiba Corp | 液晶表示装置 |
| JP2002278498A (ja) * | 2001-01-10 | 2002-09-27 | Sharp Corp | 表示装置 |
| JP2002313093A (ja) * | 2001-04-13 | 2002-10-25 | Toshiba Corp | シフトレジスタ、駆動回路、電極基板及び平面表示装置 |
| JP2002328655A (ja) * | 2001-04-27 | 2002-11-15 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
| JP2004070186A (ja) * | 2002-08-09 | 2004-03-04 | Hitachi Ltd | 画像表示装置および画像表示モジュール |
-
2003
- 2003-12-25 JP JP2003431583A patent/JP2004220021A/ja not_active Withdrawn
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56117275A (en) * | 1980-02-22 | 1981-09-14 | Tokyo Shibaura Electric Co | Image display |
| JPH05119298A (ja) * | 1991-10-29 | 1993-05-18 | Semiconductor Energy Lab Co Ltd | 電気光学表示装置およびその表示方法 |
| JPH0843793A (ja) * | 1994-07-29 | 1996-02-16 | Sharp Corp | アクティブマトリクス方式の表示装置 |
| JPH08286170A (ja) * | 1995-02-16 | 1996-11-01 | Toshiba Corp | 液晶表示装置 |
| JPH09292631A (ja) * | 1996-04-26 | 1997-11-11 | Toshiba Corp | 液晶表示装置 |
| JP2000284727A (ja) * | 1999-01-29 | 2000-10-13 | Seiko Epson Corp | 表示装置 |
| JP2000338918A (ja) * | 1999-05-27 | 2000-12-08 | Sony Corp | 表示装置及びその駆動方法 |
| JP2001195028A (ja) * | 2000-01-11 | 2001-07-19 | Rohm Co Ltd | 表示装置およびその駆動方法 |
| WO2001073737A1 (en) * | 2000-03-30 | 2001-10-04 | Seiko Epson Corporation | Display |
| JP2002132234A (ja) * | 2000-08-18 | 2002-05-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
| JP2002132217A (ja) * | 2000-08-18 | 2002-05-09 | Semiconductor Energy Lab Co Ltd | 電子装置およびその駆動方法 |
| JP2002156953A (ja) * | 2000-09-05 | 2002-05-31 | Toshiba Corp | 表示装置およびその駆動方法 |
| JP2002169181A (ja) * | 2000-12-04 | 2002-06-14 | Toshiba Corp | 液晶表示装置 |
| JP2002278498A (ja) * | 2001-01-10 | 2002-09-27 | Sharp Corp | 表示装置 |
| JP2002313093A (ja) * | 2001-04-13 | 2002-10-25 | Toshiba Corp | シフトレジスタ、駆動回路、電極基板及び平面表示装置 |
| JP2002328655A (ja) * | 2001-04-27 | 2002-11-15 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
| JP2004070186A (ja) * | 2002-08-09 | 2004-03-04 | Hitachi Ltd | 画像表示装置および画像表示モジュール |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7307872B2 (en) * | 2005-05-30 | 2007-12-11 | Hynix Semiconductor Inc. | Nonvolatile semiconductor static random access memory device |
| JP2007025701A (ja) * | 2005-07-20 | 2007-02-01 | Samsung Electronics Co Ltd | 表示装置の駆動装置 |
| US8154497B2 (en) | 2005-07-20 | 2012-04-10 | Samsung Electronics Co., Ltd. | Driving apparatus for display device |
| US8264446B2 (en) | 2005-07-20 | 2012-09-11 | Samsung Electronics Co., Ltd. | Driving apparatus for display device |
| JP2007035839A (ja) * | 2005-07-26 | 2007-02-08 | Seiko Epson Corp | 有機強誘電体メモリ |
| US8643586B2 (en) | 2006-08-31 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2013041660A (ja) * | 2006-08-31 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| US9184183B2 (en) | 2006-08-31 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US9335599B2 (en) | 2006-08-31 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US9684215B2 (en) | 2006-08-31 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10088725B2 (en) | 2006-08-31 | 2018-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10401699B2 (en) | 2006-08-31 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10606140B2 (en) | 2006-08-31 | 2020-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11194203B2 (en) | 2006-08-31 | 2021-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11971638B2 (en) | 2006-08-31 | 2024-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
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