JP2004193598A - 不揮発性半導体記憶装置及びその製造方法 - Google Patents

不揮発性半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP2004193598A
JP2004193598A JP2003397651A JP2003397651A JP2004193598A JP 2004193598 A JP2004193598 A JP 2004193598A JP 2003397651 A JP2003397651 A JP 2003397651A JP 2003397651 A JP2003397651 A JP 2003397651A JP 2004193598 A JP2004193598 A JP 2004193598A
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Japan
Prior art keywords
gate
insulating film
region
film
forming
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JP2003397651A
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Japanese (ja)
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JP2004193598A5 (enExample
Inventor
Takashi Kobayashi
小林　　孝
Yoshitaka Sasako
佳孝 笹子
Takeshi Arikane
有金　　剛
Yoshihiro Ikeda
良広 池田
Kenji Kanemitsu
賢司 金光
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2003397651A priority Critical patent/JP2004193598A/ja
Publication of JP2004193598A publication Critical patent/JP2004193598A/ja
Publication of JP2004193598A5 publication Critical patent/JP2004193598A5/ja
Withdrawn legal-status Critical Current

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JP2003397651A 2002-11-28 2003-11-27 不揮発性半導体記憶装置及びその製造方法 Withdrawn JP2004193598A (ja)

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JP2003397651A JP2004193598A (ja) 2002-11-28 2003-11-27 不揮発性半導体記憶装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002345456 2002-11-28
JP2003397651A JP2004193598A (ja) 2002-11-28 2003-11-27 不揮発性半導体記憶装置及びその製造方法

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JP2004193598A true JP2004193598A (ja) 2004-07-08
JP2004193598A5 JP2004193598A5 (enExample) 2007-01-18

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066702A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置の製造方法
JP2006121009A (ja) * 2004-10-25 2006-05-11 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2012069795A (ja) * 2010-09-24 2012-04-05 Lapis Semiconductor Co Ltd 半導体集積回路装置の製造方法
US20220148904A1 (en) * 2017-08-14 2022-05-12 Watlow Electric Manufacturing Company Method for joining quartz pieces and quartz electrodes and other devices of joined quartz

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066702A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置の製造方法
JP2006121009A (ja) * 2004-10-25 2006-05-11 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2012069795A (ja) * 2010-09-24 2012-04-05 Lapis Semiconductor Co Ltd 半導体集積回路装置の製造方法
US20220148904A1 (en) * 2017-08-14 2022-05-12 Watlow Electric Manufacturing Company Method for joining quartz pieces and quartz electrodes and other devices of joined quartz
US12020971B2 (en) * 2017-08-14 2024-06-25 Watlow Electric Manufacturing Company Method for joining quartz pieces and quartz electrodes and other devices of joined quartz

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