JP2004170908A5

JP2004170908A5 -

Info

Publication number: JP2004170908A5
Application number: JP2003321780A
Authority: JP
Filing date: 2003-09-12
Publication date: 2006-04-20
Anticipated expiration: 2023-09-12

Claims

A data line, a scanning line intersecting with the data line, a pixel electrode and a thin film transistor arranged to correspond to the intersecting region of the data line and the scanning line are provided as a part of a stacked structure on the substrate. Electro-optic device,
On the substrate further
A storage capacitor formed above the semiconductor layer of the thin film transistor and below the pixel electrode and electrically connected to a pixel potential;
An upper light-shielding film disposed between the data line and the pixel electrode;
A relay layer that electrically connects at least one of a pair of electrodes constituting the storage capacitor and the pixel electrode is provided as a part of the stacked structure,
In the upper light shielding film, a triangular projecting region that defines the corner of the pixel opening region is formed,
The electro-optical device is characterized in that the pixel opening region is defined by the upper light shielding film and the relay layer.

A light-shielding relay film is formed of the same film as the upper light-shielding film and electrically connects the thin film transistor and the pixel electrode, and the pixel opening region is defined by the light-shielding film and the relay film. The electro-optical device according to claim 1.

The electro-optical device according to claim 2, wherein the upper light shielding film is connected to one electrode forming the storage capacitor.

An interlayer insulating film disposed as a base of the pixel electrode further forms part of the stacked structure;
Contact holes for electrical connection with the pixel electrodes are formed in the interlayer insulating film,
4. The electro-optical device according to claim 1, wherein a film containing the titanium or a compound thereof is formed on at least an inner surface of the contact hole. 5.

The electro-optical device according to claim 1, wherein the data line is formed as the same film as the relay layer.

The scanning line is made of a light shielding material, defines a corner of the pixel opening area together with the upper light shielding film, and the storage capacitor is formed at the corner of the pixel opening area. The electro-optical device according to claim 1.

The electro-optical device according to claim 1, wherein the relay layer includes an aluminum film and a nitride film.

The electro-optical device according to claim 1, wherein at least one of the scanning line, the data line, and the pair of electrodes constituting the storage capacitor is made of a light shielding material.

The upper light shielding film is a shield layer electrically connected to one of a pair of electrodes constituting the storage capacitor, and is formed in a lattice shape so as to cover the data line and the scanning line,
The electro-optical device according to claim 1, wherein the shield layer is a multilayer film including a low resistance film.

The electro-optical device according to claim 9, wherein the shield layer has the low resistance film in a lower layer thereof and a film made of a light absorbing material in an upper layer thereof.

11. The electro-optical device according to claim 9, wherein the low resistance film is made of aluminum or an aluminum alloy.

The storage capacity is
A first portion formed of a dielectric film, and an upper electrode and a lower electrode sandwiching the dielectric film, laminated along a plane parallel to the surface of the substrate; and a plane rising from the surface of the substrate 12. The electro-optical device according to claim 1, wherein the cross-sectional shape includes a convex shape.

The electro-optical device according to claim 12, wherein the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line.

2. The storage capacitor according to claim 1, wherein the storage capacitor includes a dielectric film and an upper electrode and a lower electrode sandwiching the dielectric film, and the dielectric film includes a silicon nitride film and a silicon oxide film. The electro-optical device described.

An interlayer insulating film disposed as a base of the pixel electrode further forms part of the stacked structure;
The electro-optical device according to claim 1, wherein a surface of the interlayer insulating film is subjected to a planarization process.

A plurality of the pixel electrodes are arranged in a plane, and are inverted and driven with a first pixel electrode group for being inverted and driven with a first cycle, and with a second cycle complementary to the first cycle. A second pixel electrode group for
At least one of the data line and the shield layer includes a main line portion extending above the scan line so as to intersect the scan line, and a projecting portion projecting from the main line portion along the scan line,
A counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate;
On the base surface of the pixel electrode on the substrate, a convex portion is formed in a region serving as a gap between adjacent pixel electrodes across the scanning line as viewed in plan according to the presence of the protruding portion. The electro-optical device according to claim 15.

A plurality of the pixel electrodes are arranged in a plane, and are inverted and driven with a first pixel electrode group for being inverted and driven with a first cycle, and with a second cycle complementary to the first cycle. A second pixel electrode group for
A counter electrode facing the plurality of pixel electrodes on a counter substrate disposed opposite to the substrate;
A convex portion formed in a region serving as a gap between adjacent pixel electrodes in plan view,
The convex portion is formed by removing a flattening film once formed on the convex portion by etching and receding the surface of the convex portion exposed after the removal, and having a gradual surface step. The electro-optical device according to claim 15.

A plurality of the pixel electrodes are arranged in a plane, and are inverted and driven with a first pixel electrode group for being inverted and driven with a first cycle, and with a second cycle complementary to the first cycle. A second pixel electrode group for
A counter electrode facing the plurality of pixel electrodes on a counter substrate disposed opposite to the substrate;
In order to form a convex portion in a region that is a gap between pixel electrodes adjacent to each other when seen in a plan view, a convex pattern is formed under the pixel electrode and as the same layer as at least one of the data line and the shield layer. 16. The electro-optical device according to claim 15, further comprising:

An electronic apparatus comprising the electro-optical device according to claim 1.